Data Sheet

2N7002E
N-channel TrenchMOS FET
Rev. 03 — 28 April 2006
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology.
1.2 Features
■ Logic level threshold compatible
■ Surface-mounted package
■ Very fast switching
■ TrenchMOS technology
1.3 Applications
■ Logic level translator
■ High-speed line driver
1.4 Quick reference data
■ VDS ≤ 60 V
■ RDSon ≤ 3 Ω
■ ID ≤ 385 mA
■ Ptot ≤ 0.83 W
2. Pinning information
Table 1:
Pinning
Pin
Description
1
gate (G)
2
source (S)
3
drain (D)
Simplified outline
Symbol
D
3
G
1
2
SOT23
mbb076
S
2N7002E
Philips Semiconductors
N-channel TrenchMOS FET
3. Ordering information
Table 2:
Ordering information
Type number
2N7002E
Package
Name
Description
Version
TO-236AB
plastic surface-mounted package; 3 leads
SOT23
4. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
25 °C ≤ Tj ≤ 150 °C
-
60
V
VDGR
drain-gate voltage (DC)
25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ
-
60
V
VGS
gate-source voltage
-
±30
V
VGSM
peak gate-source voltage
tp ≤ 50 µs; pulsed; duty cycle = 25 %
-
±40
V
ID
drain current
Tsp = 25 °C; VGS = 10 V; see Figure 2 and 3
-
385
mA
Tsp = 100 °C; VGS = 10 V; see Figure 2
-
245
mA
A
IDM
peak drain current
Tsp = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3
-
1.5
Tsp = 25 °C; see Figure 1
Ptot
total power dissipation
-
0.83
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−65
+150
°C
Source-drain diode
IS
source current
Tsp = 25 °C
-
385
mA
ISM
peak source current
Tsp = 25 °C; pulsed; tp ≤ 10 µs
-
1.5
mA
2N7002E_3
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 03 — 28 April 2006
2 of 12
2N7002E
Philips Semiconductors
N-channel TrenchMOS FET
03aa17
120
03aa25
120
Ider
(%)
Pder
(%)
80
80
40
40
0
0
0
50
100
150
Tsp (°C)
200
0
P tot
P der = ------------------------ × 100 %
P
°
50
100
150
Tsp (°C)
200
ID
I der = --------------------- × 100 %
I
°
tot ( 25 C )
D ( 25 C )
Fig 1. Normalized total power dissipation as a
function of solder point temperature
Fig 2. Normalized continuous drain current as a
function of solder point temperature
03ai10
10
ID
(A)
Limit RDSon = VDS / ID
tp = 10 µ s
1
100 µ s
10-1
1 ms
DC
10 ms
100 ms
-2
10
1
10
VDS (V)
102
Tsp = 25 °C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
2N7002E_3
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 03 — 28 April 2006
3 of 12
2N7002E
Philips Semiconductors
N-channel TrenchMOS FET
5. Thermal characteristics
Table 4:
Thermal characteristics
Symbol Parameter
thermal resistance from junction to solder point
Rth(j-sp)
see Figure 4
[1]
thermal resistance from junction to ambient
Rth(j-a)
[1]
Conditions
Min
Typ
Max
Unit
-
-
150
K/W
-
-
350
K/W
Mounted on a printed-circuit board; minimum footprint; vertical in still air
003aab358
103
Zth(j-sp)
(K/W)
102
δ = 0.5
0.2
0.1
10
0.05
0.02
single pulse
1
10-5
10-4
10-3
10-2
10-1
1
tp (s)
10
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
2N7002E_3
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 03 — 28 April 2006
4 of 12
2N7002E
Philips Semiconductors
N-channel TrenchMOS FET
6. Characteristics
Table 5:
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Tj = 25 °C
60
-
-
V
Tj = −55 °C
55
-
-
V
Static characteristics
V(BR)DSS drain-source breakdown
voltage
VGS(th)
IDSS
gate-source threshold voltage
drain leakage current
ID = 10 µA; VGS = 0 V
ID = 0.25 mA; VDS = VGS; see Figure 9 and 10
Tj = 25 °C
1
2
2.5
V
Tj = 150 °C
0.6
-
-
V
Tj = −55 °C
-
-
2.75
V
VDS = 48 V; VGS = 0 V
Tj = 25 °C
-
-
1
µA
Tj = 150 °C
-
-
10
µA
-
10
100
nA
IGSS
gate leakage current
VGS = ±15 V; VDS = 0 V
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 500 mA; see Figure 6 and 8
Tj = 25 °C
-
0.78
3
Ω
Tj = 150 °C
-
1.45
5.5
Ω
VGS = 4.5 V; ID = 75 mA; see Figure 6 and 8
-
1.2
4
Ω
ID = 300 mA; VDS = 30 V; VGS = 10 V;
see Figure 11 and 12
-
0.69
-
nC
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
ton
turn-on time
toff
turn-off time
-
0.1
-
nC
-
0.27
-
nC
VGS = 0 V; VDS = 10 V; f = 1 MHz;
see Figure 14
-
31
50
pF
-
6.8
30
pF
-
3.5
10
pF
VDS = 50 V; RL = 250 Ω; VGS = 10 V;
RG = 50 Ω; RGS = 50 Ω
-
2.5
10
ns
-
11
15
ns
Source-drain diode
VSD
source-drain voltage
IS = 300 mA; VGS = 0 V; see Figure 13
-
0.85
1.5
V
trr
reverse recovery time
IS = 300 mA; dIS/dt = −100 A/µs; VGS = 0 V
-
30
-
ns
Qr
recovered charge
-
30
-
nC
2N7002E_3
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 03 — 28 April 2006
5 of 12
2N7002E
Philips Semiconductors
N-channel TrenchMOS FET
03ai12
1
10
ID
(A)
03ai14
5000
5
RDSon
(mΩ)
0.8
VGS (V) = 4
4000
4.5
0.6
3000
4.5
4
0.4
2000
5
VGS (V) = 3.5
0.2
1000
0
10
0
0
0.5
1
1.5
VDS (V)
2
0
Tj = 25 °C
0.2
0.4
0.6
0.8
1
ID (A)
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
03ai16
1
Fig 6. Drain-source on-state resistance as a function
of drain current; typical values
03aa28
2.4
ID
(A)
a
0.8
1.8
0.6
1.2
0.4
Tj = 150 °C
25 °C
0.6
0.2
0
0
2
4
VGS (V)
6
Tj = 25 °C and 150 °C; VDS > ID × RDSon
0
-60
60
120
Tj (°C)
180
R DSon
a = ----------------------------R DSon ( 25 °C )
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
2N7002E_3
Product data sheet
0
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 03 — 28 April 2006
6 of 12
2N7002E
Philips Semiconductors
N-channel TrenchMOS FET
003aab101
3
VGS(th)
(V)
ID
(A)
max
typ
2
10-4
min
1
0
-60
003aab100
10-3
min
typ
max
10-5
10-6
0
60
120
Tj (°C)
180
0
1
2
VGS (V)
3
Tj = 25 °C; VDS = 5 V
ID = 0.25 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
003aab359
10
VGS ID = 0.3 A
Tj = 25 °C
(V)
8 VDS = 30 V
VDS
ID
6
VGS(pl)
4
VGS(th)
VGS
2
QGS1
QGS2
QGS
0
0
0.2
0.4
0.6
QG (nC)
0.8
QGD
QG(tot)
003aaa508
ID = 0.3 A; VDS = 30 V
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Gate charge waveform definitions
2N7002E_3
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 03 — 28 April 2006
7 of 12
2N7002E
Philips Semiconductors
N-channel TrenchMOS FET
03ai17
1
03ai18
102
IS
(A)
0.8
C
(pF)
Ciss
0.6
10
0.4
Coss
0.2
0
0.2
0.4
Crss
Tj = 25 °C
150 °C
0.6
0.8
VSD (V)
1
Tj = 25 °C and 150 °C; VGS = 0 V
1
10-1
10
VDS (V)
102
VGS = 0 V; f = 1 MHz
Fig 13. Source current as a function of source-drain
voltage; typical values
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
2N7002E_3
Product data sheet
1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 03 — 28 April 2006
8 of 12
2N7002E
Philips Semiconductors
N-channel TrenchMOS FET
7. Package outline
Plastic surface-mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
SOT23
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
TO-236AB
Fig 15. Package outline SOT23
2N7002E_3
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 03 — 28 April 2006
9 of 12
2N7002E
Philips Semiconductors
N-channel TrenchMOS FET
8. Revision history
Table 6:
Revision history
Document ID
Release date
Data sheet status
Change notice
Doc. number
Supersedes
2N7002E_3
20060428
Product data sheet
-
-
2N7002E_2
Modifications:
•
•
•
•
•
•
•
•
•
Table 5 “Characteristics”: VGS(th) ID condition modified
Table 5 “Characteristics”: VGS(th) maximum limits modified
Table 5 “Characteristics”: RDSon typical values modified
Table 5 “Characteristics”: gfs removed
Table 5 “Characteristics”: Addition of QG(tot), QGS and QGD
Table 5 “Characteristics”: Ciss, Coss and Crss values modified
Table 5 “Characteristics”: ton and toff typical values modified
Figure 3, 4, 5, 6, 7, 9, 10, 13 and 14: modified
Figure 11: added
2N7002E_2
20050426
Product data sheet
-
9397 750 14944
2N7002E-01
2N7002E-01
20020211
Product data
-
9397 750 09095
-
2N7002E_3
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 03 — 28 April 2006
10 of 12
2N7002E
Philips Semiconductors
N-channel TrenchMOS FET
9. Data sheet status
Level
Data sheet status [1]
Product status [2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
10. Definitions
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
makes no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
12. Trademarks
Notice — All referenced brands, product names, service names and
trademarks are the property of their respective owners.
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.
11. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
13. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
2N7002E_3
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 03 — 28 April 2006
11 of 12
2N7002E
Philips Semiconductors
N-channel TrenchMOS FET
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information . . . . . . . . . . . . . . . . . . . . 11
© Koninklijke Philips Electronics N.V. 2006
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 28 April 2006
Document number: 2N7002E_3
Published in The Netherlands
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