A1N4007G-G

General Purpose Silicon Rectifiers
A1N4007G-G
Voltage: 1000 V
Current: 1.0 A
RoHS Device
DO-41
Features
- Low drop down voltage
1.0(25.40) Min.
- High current capability
- Low reverse leakage.
- High forward surge current capability.
0.205(5.20)
0.160(4.20)
- Glass passivated chip junction.
0.107(2.70)
0.080(2.00)
- Comply with AEC-Q101
1.0(25.40) Min.
Mechanical data
- Case: JEDEC DO-41 molded plastic
0.034(0.86)
0.028(0.70)
- Epoxy: UL 94V-0 rate flame retardant
- Terminals: Solderable per MIL-STD-750
method 2026.
- Polarity: Color band denotes cathode end
Dimensions in inches and (millimeter)
Circuit diagram
- Mounting position: Any
- Weight: 0.34 grams(approx. )
Maximum Ratings and Electrical Characteristics (at Ta=25°C unless otherwise noted)
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
Symbol
Value
Unit
Maximum recurrent peak reverse voltage
VRRM
1000
V
Maximum RMS voltage
VRMS
700
V
Maximum DC blocking voltage
VDC
1000
V
Parameter
Conditions
Maximum average forward rectified current
see figure 1
I(AV)
1
A
Peak forward surge current
8.3mS single half sine-wave
superimposed on rated load
(JEDEC Method) TL=110°C
IFSM
30
A
Maximum instantaneous forward voltage
@IF = 1A
VF
1.1
V
Maximum DC reverse current
at rated DC blocking voltage
TA = 25°C
Typical junction Capacitance
VR = 4V, f = 1MHz
Typical thermal resistance
Junction to ambient
Operating junction temperature range
Storage temperature range
5
μA
IR
50
TA = 125°C
CJ
10
pF
RΘJA
45
°C/W
TJ
-55 ~ +125
°C
TSTG
-55 ~ +150
°C
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
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Page 1
Comchip Technology CO., LTD.
General Purpose Silicon Rectifiers
Rating and Characteristic Curves ( A1N4007G-G )
Fig.1 - Forward Current Derating Curve
100
Resistive or inductive load
Peak Forward Surge Current, (A)
Average Forward Current, (A)
1.2
Fig.2 - Maximum Non-Repetitive
Peak Forward Surge Current
1.0
0.8
0.6
0.4
0.2
10
1
0
0
25
75
50
100
1
125
100
10
Lead Temperature, TL (°C)
Number of Cycles at 60Hz
Fig.3 - Typical Instantaneous Forward
Characteristics
Fig.4 - Typical Reverse Characteristics
100
10
Instantaneous Reverse Current, (μA)
Instantaneous Forward Current, (A)
8.3mS single half sine-wave
(JEDEC Method)
10
TJ=25°C
1.0
0.1
Pulse width=300μs.
1% duty cycle
0.01
0.4
TJ=125°C
1.0
0.1
TJ=25°C
0.01
0.001
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward Voltage, (V)
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage, (%)
Fig.5 - Typical Junction Capacitance
Junction Capacitance, (pF)
100
10
1
0.01
0.1
1.0
10
100
Reverse Voltage, (V)
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
AQW-BG001
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Comchip Technology CO., LTD.
General Purpose Silicon Rectifiers
Taping Specification For Axial Lead Diodes
90℃±5℃
Z
A
L
L1
B
H
L2
T
W
SYMBOL
A
B
Z
T
L1
L2
(mm)
5.00 ± 0.50
52.00 ± 0.50
1.20 (max)
6.00 ± 0.40
1.00 (max)
1.00 (max)
(inch)
0.197 ± 0.020
2.047 ± 0.020
0.047 (max)
0.236 ± 0.016
0.039 (max)
0.039 (max)
SYMBOL
L
W
H
(mm)
260.00 ± 10.00
75.00 ± 10.00
140.00 ± 10.00
(inch)
10.236 ± 0.394
2.953 ± 0.394
5.512 ± 0.394
DO-41
DO-41
Marking Code
Part Number
Marking Code
A1N4007G-G
1N4007G
1N4007G
1N4007G = Product type marking code
Standard Packaging
AMMO PACK
Case Type
DO-41
BOX
CARTON
( pcs )
( pcs )
5,000
50,000
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
AQW-BG001
Page 3
Comchip Technology CO., LTD.
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