IGBT Highspeed5FASTIGBTinTRENCHSTOPTM5technology IGP30N65F5 650VIGBThighspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl IGP30N65F5 Highspeedswitchingseriesfifthgeneration Highspeed5FASTIGBTinTRENCHSTOPTM5technology FeaturesandBenefits: C HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowgatechargeQG •IdealfitwithSICSchottkyDiodeinboostconverters •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E C TargetApplications: •Solarconverters •Uninterruptiblepowersupplies •Weldingconverters •Midtohighrangeswitchingfrequencyconverters G C E KeyPerformanceandPackageParameters Type IGP30N65F5 VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 650V 30A 1.6V 175°C G30EF5 PG-TO220-3 2 Rev.2.2,2014-12-04 IGP30N65F5 Highspeedswitchingseriesfifthgeneration TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 3 Rev.2.2,2014-12-04 IGP30N65F5 Highspeedswitchingseriesfifthgeneration MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 650 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 55.0 35.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 90.0 A Turn off safe operating area VCE≤650V,Tvj≤175°C,tp=1µs - 90.0 A Gate-emitter voltage TransientGate-emittervoltage(tp≤10µs,D<0.010) VGE ±20 ±30 V PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 188.0 93.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance, junction - case Rth(j-c) 0.80 K/W Thermal resistance junction - ambient Rth(j-a) 62 K/W ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 650 - - Collector-emitter saturation voltage VCEsat VGE=15.0V,IC=30.0A Tvj=25°C Tvj=125°C Tvj=175°C - 1.60 1.80 1.90 2.10 - Gate-emitter threshold voltage VGE(th) IC=0.30mA,VCE=VGE 3.2 4.0 4.8 Zero gate voltage collector current ICES VCE=650V,VGE=0V Tvj=25°C Tvj=175°C - - Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=30.0A - 38.0 - S StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 4 V V V 40.0 µA 4000.0 Rev.2.2,2014-12-04 IGP30N65F5 Highspeedswitchingseriesfifthgeneration ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 1800 - - 45 - - 9 - - 65.0 - nC - 7.0 - nH DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE VCE=25V,VGE=0V,f=1MHz VCC=520V,IC=30.0A, VGE=15V pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 19 - ns - 9 - ns - 170 - ns - 10 - ns - 0.28 - mJ - 0.07 - mJ - 0.35 - mJ - 18 - ns - 4 - ns - 174 - ns - 15 - ns - 0.09 - mJ - 0.02 - mJ - 0.11 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=25°C, VCC=400V,IC=15.0A, VGE=0.0/15.0V, RG(on)=23.0Ω,RG(off)=23.0Ω, Lσ=30nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Tvj=25°C, VCC=400V,IC=5.0A, VGE=0.0/15.0V, RG(on)=23.0Ω,RG(off)=23.0Ω, Lσ=30nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. 5 Rev.2.2,2014-12-04 IGP30N65F5 Highspeedswitchingseriesfifthgeneration SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 18 - ns - 10 - ns - 203 - ns - 3 - ns - 0.38 - mJ - 0.12 - mJ - 0.50 - mJ - 16 - ns - 5 - ns - 230 - ns - 9 - ns - 0.15 - mJ - 0.04 - mJ - 0.19 - mJ IGBTCharacteristic,atTvj=150°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=150°C, VCC=400V,IC=15.0A, VGE=0.0/15.0V, RG(on)=23.0Ω,RG(off)=23.0Ω, Lσ=30nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Tvj=150°C, VCC=400V,IC=5.0A, VGE=0.0/15.0V, RG(on)=23.0Ω,RG(off)=23.0Ω, Lσ=30nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. 6 Rev.2.2,2014-12-04 IGP30N65F5 Highspeedswitchingseriesfifthgeneration 100 200 180 Ptot,POWERDISSIPATION[W] IC,COLLECTORCURRENT[A] 160 10 not for linear use 1 140 120 100 80 60 40 20 0.1 1 10 100 0 1000 25 VCE,COLLECTOR-EMITTERVOLTAGE[V] 50 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 1. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tvj≤175°C,VGE=15V,tp=1µs. RecommendeduseatVGE≥7.5V) Figure 2. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) 60 90 80 50 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 70 40 30 20 VGE=18V 15V 60 12V 10V 50 8V 40 7V 6V 30 5V 20 4V 10 10 0 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] 0 1 2 3 4 5 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 3. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tvj≤175°C) Figure 4. Typicaloutputcharacteristic (Tvj=25°C) 7 Rev.2.2,2014-12-04 IGP30N65F5 Highspeedswitchingseriesfifthgeneration 90 90 80 80 70 VGE=18V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 70 15V 60 12V 10V 50 8V 40 7V 6V 30 5V 20 60 50 40 30 20 4V 10 0 Tj=25°C Tj=150°C 10 0 1 2 3 4 0 5 4.5 VCE,COLLECTOR-EMITTERVOLTAGE[V] 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 VGE,GATE-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=150°C) Figure 6. Typicaltransfercharacteristic (VCE=20V) IC=7,5A IC=15A IC=30A 1.75 td(off) tf td(on) tr 100 t,SWITCHINGTIMES[ns] VCEsat,COLLECTOR-EMITTERSATURATION[V] 2.00 1.50 1.25 1.00 10 0.75 0.50 0 25 50 75 100 125 150 1 175 Tvj,JUNCTIONTEMPERATURE[°C] 0 10 20 30 40 50 60 70 80 90 IC,COLLECTORCURRENT[A] Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof afunctionofjunctiontemperature collectorcurrent (VGE=15V) (inductiveload,Tvj=150°C,VCE=400V, VGE=15/0V,rG=23Ω,Dynamictestcircuitin Figure E) 8 Rev.2.2,2014-12-04 IGP30N65F5 Highspeedswitchingseriesfifthgeneration 1000 td(off) tf td(on) tr td(off) tf td(on) tr t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] 100 100 10 1 5 15 25 35 45 55 65 75 10 1 85 25 rG,GATERESISTOR[Ω] Figure 9. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tvj=150°C,VCE=400V, VGE=15/0V,IC=15A,Dynamictestcircuitin Figure E) 75 100 125 150 175 Figure 10. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=15A,rG=23Ω,Dynamictestcircuitin Figure E) 6 5.0 typ. min. max. Eoff Eon Ets 4.5 5 E,SWITCHINGENERGYLOSSES[mJ] VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] 50 Tvj,JUNCTIONTEMPERATURE[°C] 4 3 2 1 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 25 50 75 100 125 0.0 150 Tvj,JUNCTIONTEMPERATURE[°C] 0 10 20 30 40 50 60 70 80 90 IC,COLLECTORCURRENT[A] Figure 11. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.3mA) 9 Figure 12. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=150°C,VCE=400V, VGE=15/0V,rG=23Ω,Dynamictestcircuitin Figure E) Rev.2.2,2014-12-04 IGP30N65F5 Highspeedswitchingseriesfifthgeneration 1.0 0.8 Eoff Eon Ets 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.6 0.5 0.4 0.3 0.2 0.1 0.1 0.0 Eoff Eon Ets 0.7 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 0.9 5 15 25 35 45 55 65 75 0.0 85 25 rG,GATERESISTOR[Ω] Figure 13. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tvj=150°C,VCE=400V, VGE=15/0V,IC=15A,Dynamictestcircuitin Figure E) 75 100 125 150 175 Figure 14. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=15A,rG=23Ω,Dynamictestcircuitin Figure E) 0.6 16 Eoff Eon Ets 130V 520V 14 0.5 VGE,GATE-EMITTERVOLTAGE[V] E,SWITCHINGENERGYLOSSES[mJ] 50 Tvj,JUNCTIONTEMPERATURE[°C] 0.4 0.3 0.2 12 10 8 6 4 0.1 2 0.0 200 250 300 350 400 450 0 500 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 15. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=150°C,VGE=15/0V, IC=15A,rG=23Ω,Dynamictestcircuitin Figure E) 0 10 20 30 40 50 60 70 80 QGE,GATECHARGE[nC] Figure 16. Typicalgatecharge (IC=30A) 10 Rev.2.2,2014-12-04 IGP30N65F5 Highspeedswitchingseriesfifthgeneration 1E+4 1 Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] Cies Coes Cres C,CAPACITANCE[pF] 1000 100 10 1 0 5 10 15 20 25 D=0.5 0.2 0.05 0.02 0.01 single pulse 0.01 i: 1 2 3 4 ri[K/W]: 0.07749916 0.2797936 0.2828165 0.1598907 τi[s]: 3.7E-5 3.6E-4 4.9E-3 0.04086392 0.001 1E-6 30 VCE,COLLECTOR-EMITTERVOLTAGE[V] 0.1 0.1 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 17. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) Figure 18. IGBTtransientthermalimpedance (D=tp/T) 11 Rev.2.2,2014-12-04 IGP30N65F5 Highspeedswitchingseriesfifthgeneration PG-TO220-3 12 Rev.2.2,2014-12-04 IGP30N65F5 Highspeedswitchingseriesfifthgeneration vGE(t) I,V 90% VGE dIF/dt a a 10% VGE b b t IC(t) dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t vCE(t) t td(off) tf td(on) t tr Figure A. vGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t vCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Ls, relief capacitor Cr, (only for ZVT switching) on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. 13 Rev.2.2,2014-12-04 IGP30N65F5 High speed switching series fifth generation Revision History IGP30N65F5 Revision: 2014-12-04, Rev. 2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2014-06-11 Final data sheet 2.2 2014-12-04 Minor changes Fig.1 and Fig.14 We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 14 Rev. 2.2, 2014-12-04