IGW15N120H3 Data Sheet (2 MB, EN)

IGBT
HighspeedIGBTinTrenchandFieldstoptechnology
IGW15N120H3
1200Vhighspeedswitchingseriesthirdgeneration
Datasheet
IndustrialPowerControl
IGW15N120H3
Highspeedswitchingseriesthirdgeneration
HighspeedIGBTinTrenchandFieldstoptechnology
Features:
C
TRENCHSTOPTMtechnologyoffering
•verylowturn-offenergy
•lowVCEsat
•lowEMI
•maximumjunctiontemperature175°C
•qualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating,halogen-freemouldcompound,RoHS
compliant
•completeproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
G
E
Applications:
•uninterruptiblepowersupplies
•weldingconverters
•converterswithhighswitchingfrequency
1
Packagepindefinition:
2
3
•Pin1-gate
•Pin2&backside-collector
•Pin3-emitter
KeyPerformanceandPackageParameters
Type
IGW15N120H3
VCE
IC
VCEsat,Tvj=25°C
Tvjmax
Marking
Package
1200V
15A
2.05V
175°C
G15H1203
PG-TO247-3
2
Rev.2.1,2014-12-01
IGW15N120H3
Highspeedswitchingseriesthirdgeneration
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
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IGW15N120H3
Highspeedswitchingseriesthirdgeneration
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
1200
V
DCcollectorcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IC
30.0
15.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax
ICpuls
60.0
A
TurnoffsafeoperatingareaVCE≤1200V,Tvj≤175°C
-
60.0
A
Gate-emitter voltage
VGE
±20
V
Short circuit withstand time
VGE=15.0V,VCC≤600V
Allowed number of short circuits < 1000
Time between short circuits: ≥ 1.0s
Tvj=175°C
tSC
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Ptot
217.0
105.0
W
Operating junction temperature
Tvj
-40...+175
°C
Storage temperature
Tstg
-55...+150
°C
µs
10
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
ThermalResistance
Parameter
Characteristic
Symbol Conditions
Max.Value
Unit
IGBT thermal resistance,
junction - case
Rth(j-c)
0.70
K/W
Thermal resistance
junction - ambient
Rth(j-a)
40
K/W
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
1200
-
-
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=15.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
2.05
2.50
2.70
2.40
-
Gate-emitter threshold voltage
VGE(th)
IC=0.50mA,VCE=VGE
5.0
5.8
6.5
Zero gate voltage collector current
ICES
VCE=1200V,VGE=0V
Tvj=25°C
Tvj=175°C
-
-
Gate-emitter leakage current
IGES
VCE=0V,VGE=20V
-
-
600
nA
Transconductance
gfs
VCE=20V,IC=15.0A
-
7.5
-
S
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA
4
V
V
V
250.0 µA
2500.0
Rev.2.1,2014-12-01
IGW15N120H3
Highspeedswitchingseriesthirdgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
875
-
-
60
-
-
45
-
VCC=960V,IC=15.0A,
VGE=15V
-
75.0
-
nC
VGE=15.0V,VCC≤600V,
tSC≤10µs
Tvj=175°C
-
-
A
DynamicCharacteristic
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Gate charge
QG
Short circuit collector current
Max. 1000 short circuits
IC(SC)
Time between short circuits: ≥ 1.0s
VCE=25V,VGE=0V,f=1MHz
52
pF
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
21
-
ns
-
34
-
ns
-
260
-
ns
-
14
-
ns
-
1.10
-
mJ
-
0.45
-
mJ
-
1.55
-
mJ
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=25°C,
VCC=600V,IC=15.0A,
VGE=0.0/15.0V,
RG(on)=35.0Ω,RG(off)=35.0Ω,
Lσ=95nH,Cσ=67pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode (IKW15N120H3) reverse
recovery.
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
19
-
ns
-
30
-
ns
-
327
-
ns
-
43
-
ns
-
1.60
-
mJ
-
0.90
-
mJ
-
2.50
-
mJ
IGBTCharacteristic,atTvj=175°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=175°C,
VCC=600V,IC=15.0A,
VGE=0.0/15.0V,
RG(on)=35.0Ω,RG(off)=35.0Ω,
Lσ=95nH,Cσ=67pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode (IKW15N120H3) reverse
recovery.
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IGW15N120H3
Highspeedswitchingseriesthirdgeneration
70
100
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
60
50
40
TC=80°
TC=110°
30
TC=80°
TC=110°
20
tp=1µs
10
10µs
50µs
100µs
200µs
500µs
1
DC
10
0
1
10
100
0.1
1000
1
f,SWITCHINGFREQUENCY[kHz]
10
100
1000
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 1. Collectorcurrentasafunctionofswitching
frequency
(Tj≤175°C,D=0.5,VCE=600V,VGE=15/0V,
rG=35Ω)
Figure 2. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tj≤175°C;VGE=15V)
250
30
IC,COLLECTORCURRENT[A]
Ptot,POWERDISSIPATION[W]
200
150
100
20
10
50
0
25
50
75
100
125
150
0
175
TC,CASETEMPERATURE[°C]
25
50
75
100
125
150
175
TC,CASETEMPERATURE[°C]
Figure 3. Powerdissipationasafunctionofcase
temperature
(Tj≤175°C)
Figure 4. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tj≤175°C)
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IGW15N120H3
Highspeedswitchingseriesthirdgeneration
60
45
VGE=20V
VGE=20V
17V
17V
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
60
15V
13V
11V
9V
30
7V
5V
15
0
0
2
4
45
13V
11V
9V
30
7V
5V
15
0
6
15V
0
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic
(Tj=25°C)
6
8
5.0
VCE(sat),COLLECTOR-EMITTERSATURATION[V]
Tj=25°C
Tj=175°C
IC,COLLECTORCURRENT[A]
4
Figure 6. Typicaloutputcharacteristic
(Tj=175°C)
60
45
30
15
0
2
VCE,COLLECTOR-EMITTERVOLTAGE[V]
5
10
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
15
VGE,GATE-EMITTERVOLTAGE[V]
IC=7.5A
IC=15A
IC=30A
0
25
50
75
100
125
150
175
Tj,JUNCTIONTEMPERATURE[°C]
Figure 7. Typicaltransfercharacteristic
(VCE=20V)
Figure 8. Typicalcollector-emittersaturationvoltageas
afunctionofjunctiontemperature
(VGE=15V)
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IGW15N120H3
Highspeedswitchingseriesthirdgeneration
1000
1000
td(off)
tf
td(on)
tr
t,SWITCHINGTIMES[ns]
t,SWITCHINGTIMES[ns]
td(off)
tf
td(on)
tr
100
10
0
5
10
15
20
25
100
10
30
10
30
IC,COLLECTORCURRENT[A]
Figure 9. Typicalswitchingtimesasafunctionof
collectorcurrent
(ind.load,Tj=175°C,VCE=600V,VGE=15/0V,
rG=35Ω,testcircuitinFig.E)
90
110
7
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
td(off)
tf
td(on)
tr
t,SWITCHINGTIMES[ns]
70
Figure 10. Typicalswitchingtimesasafunctionofgate
resistor
(ind.load,Tj=175°C,VCE=600V,VGE=15/0V,
IC=15A,testcircuitinFig.E)
1000
100
10
50
rG,GATERESISTOR[Ω]
25
50
75
100
125
150
typ.
min.
max.
6
5
4
3
2
175
Tj,JUNCTIONTEMPERATURE[°C]
0
25
50
75
100
125
150
175
Tj,JUNCTIONTEMPERATURE[°C]
Figure 11. Typicalswitchingtimesasafunctionof
junctiontemperature
(ind.load,VCE=600V,VGE=15/0V,IC=15A,
rG=35Ω,testcircuitinFig.E)
Figure 12. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0.5mA)
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Rev.2.1,2014-12-01
IGW15N120H3
Highspeedswitchingseriesthirdgeneration
7
5
Eoff
Eon
Ets
E,SWITCHINGENERGYLOSSES[mJ]
E,SWITCHINGENERGYLOSSES[mJ]
6
Eoff
Eon
Ets
5
4
3
2
4
3
2
1
1
0
0
5
10
15
20
25
0
30
10
30
IC,COLLECTORCURRENT[A]
Figure 13. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(ind.load,Tj=175°C,VCE=600V,VGE=15/0V,
rG=35Ω,testcircuitinFig.E)
70
90
110
Figure 14. Typicalswitchingenergylossesasa
functionofgateresistor
(ind.load,Tj=175°C,VCE=600V,VGE=15/0V,
IC=15A,testcircuitinFig.E)
2.5
3.5
Eoff
Eon
Ets
3.0
E,SWITCHINGENERGYLOSSES[mJ]
E,SWITCHINGENERGYLOSSES[mJ]
50
rG,GATERESISTOR[Ω]
2.0
1.5
1.0
0.5
Eoff
Eon
Ets
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
0.0
400
175
Tj,JUNCTIONTEMPERATURE[°C]
500
600
700
800
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(indload,VCE=600V,VGE=15/0V,IC=15A,
rG=35Ω,testcircuitinFig.E)
Figure 16. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(ind.load,Tj=175°C,VGE=15/0V,IC=15A,
rG=35Ω,testcircuitinFig.E)
9
Rev.2.1,2014-12-01
IGW15N120H3
Highspeedswitchingseriesthirdgeneration
16
240V
960V
14
12
C,CAPACITANCE[pF]
VGE,GATE-EMITTERVOLTAGE[V]
1000
10
8
6
Cies
Coes
Cres
100
4
2
0
0
10
20
30
40
50
60
70
10
80
0
QGE,GATECHARGE[nC]
Figure 17. Typicalgatecharge
(IC=15A)
30
50
80
tSC,SHORTCIRCUITWITHSTANDTIME[µs]
IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A]
20
Figure 18. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
90
70
60
50
40
30
20
10
10
VCE,COLLECTOR-EMITTERVOLTAGE[V]
10
12
14
16
40
30
20
10
0
18
VGE,GATE-EMITTERVOLTAGE[V]
10
12
14
16
18
20
VGE,GATE-EMITTERVOLTAGE[V]
Figure 19. Typicalshortcircuitcollectorcurrentasa
functionofgate-emittervoltage
(VCE≤600V,startatTj=25°C)
Figure 20. Shortcircuitwithstandtimeasafunctionof
gate-emittervoltage
(VCE≤600V,startatTj≤150°C)
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Rev.2.1,2014-12-01
IGW15N120H3
Highspeedswitchingseriesthirdgeneration
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
i:
1
2
3
4
5
ri[K/W]: 3.9E-3 0.15885 0.23655 0.2763
0.015225
τi[s]:
1.6E-5 3.0E-4
2.9E-3
0.01490178 0.1582781
0.001
1E-6
1E-5
1E-4
0.001
0.01
0.1
1
tp,PULSEWIDTH[s]
Figure 21. IGBTtransientthermalimpedance
(D=tp/T)
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IGW15N120H3
Highspeedswitchingseriesthirdgeneration
PG-TO247-3
12
Rev.2.1,2014-12-01
IGW15N120H3
Highspeedswitchingseriesthirdgeneration
vGE(t)
I,V
90% VGE
dIF/dt
a
a
10% VGE
b
b
t
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
vCE(t)
t
td(off)
tf
td(on)
t
tr
Figure A.
vGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
vCE(t)
t2
E
off
=
t4
VCE x IC x dt
E
t1
t1
Figure E. Dynamic test circuit
Parasitic inductance Ls,
parasitic capacitor Ls,
relief capacitor Cr,
(only for ZVT switching)
on
=
VCE x IC x d t
2% VCE
t3
t2
t3
t4
t
Figure B.
13
Rev.2.1,2014-12-01
IGW15N120H3
High speed switching series third generation
Revision History
IGW15N120H3
Revision: 2014-12-01, Rev. 2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
1.1
2009-11-27
-
2.1
2014-12-01
Final data sheet
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81726 München, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
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Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems
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Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support,
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14
Rev. 2.1, 2014-12-01