IRGP4790 Data Sheet (784 KB, EN)

IRGP4790PbF
IRGP4790-EPbF
Insulated Gate Bipolar Transistor
VCES = 650V
IC = 90A, TC =100°C
tSC 5.5µs, TJ(max) = 175°C
C
E
G
VCE(ON) typ. = 1.7V @ IC = 75A
C
G
IRGP4790PbF TO‐247AC E
n-channel
Applications
 Industrial Motor Drive
 UPS
 Solar Inverters
 Welding
G
Gate
G
E
IRGP4790‐EPbF TO‐247AD C
Collector
Features
C
E
Emitter
Benefits
Low VCE(ON) and Switching Losses
5.5µs Short Circuit SOA
Square RBSOA
Maximum Junction Temperature 175°C
Positive VCE (ON) Temperature Coefficient
High Efficiency in a Wide Range of Applications
Lead-Free, RoHs compliant
Environmentally friendly
Rugged Transient Performance
Increased Reliability
Excellent Current Sharing in Parallel Operation
Base part number
Package Type
IRGP4790PbF
IRGP4790-EPbF
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRGP4790PbF
IRGP4790-EPbF
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE=15V
Clamped Inductive Load Current, VGE=20V 
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
Units
650
140
90
225
300
±20
455
230
-40 to +175
V
A V
W
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
C
Thermal Resistance
RJC
RCS
RJA
1
Parameter
Thermal Resistance Junction-to-Case 
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
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Min.
–––
–––
–––
Typ.
–––
0.24
40
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Max.
0.33
–––
–––
Units
°C/W
August 22, 2014
IRGP4790PbF/IRGP4790-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
Parameter
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Min.
650
—
Typ.
—
0.65
—
1.7
—
2.1
Gate Threshold Voltage
5.5
—
VGE(th)
Threshold Voltage Temperature Coeff.
—
-20
VGE(th)/TJ
gfe
Forward Transconductance
—
47
—
1.0
ICES
Collector-to-Emitter Leakage Current
—
1.0
—
—
IGES
Gate-to-Emitter Leakage Current
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
VCE(on)
Collector-to-Emitter Saturation Voltage
Qg
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Eon
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Eoff
Etotal
td(on)
tr
td(off)
tf
Cies
Coes
Cres
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RBSOA
Reverse Bias Safe Operating Area
SCSOA Short Circuit Safe Operating Area Min.
—
—
—
—
—
—
—
—
—
—
—
Typ.
140
50
60
2.5
2.2
4.7
50
70
200
60
3.9
—
—
—
—
—
—
—
—
—
2.8
6.7
50
70
240
70
4300
230
120
Max.
—
—
2.0
V
IC = 75A, VGE = 15V, TJ = 25°C
—
IC = 75A, VGE = 15V, TJ = 175°C
7.4
V
VCE = VGE, IC = 2.1mA
—
mV/°C VCE = VGE, IC = 2.1mA (25°C-150°C)
—
S
VCE = 50V, IC = 75A, PW = 20µs
25
µA VGE = 0V, VCE = 650V
—
mA VGE = 0V, VCE = 650V, TJ = 175°C
±100
nA VGE = ±20V
Max Units
Conditions
210
IC = 75A
80
nC VGE = 15V
VCC = 400V
90
3.4
3.0
mJ IC = 75A, VCC = 400V, VGE=15V
6.4
RG = 10, L = 200µH, TJ = 25°C
70
Energy losses include tail & diode
90
ns reverse recovery 
225
80
—
—
—
—
—
—
—
—
—
—
FULL SQUARE
5.5 — Units
Conditions
V
VGE = 0V, IC = 100µA 
V/°C VGE = 0V, IC = 5.0mA (25°C-175°C)
— mJ ns
IC = 75A, VCC = 400V, VGE=15V
RG = 10, L = 200µH, TJ = 175°C
Energy losses include tail & diode
reverse recovery  VGE = 0V
VCC = 30V
f = 1.0MHz
TJ = 175°C, IC = 300A
VCC = 520V, Vp ≤ 650V
VGE = +20V to 0V
TJ = 150°C,VCC = 400V, Vp ≤ 650V
µs VGE = +15V to 0V
pF
Notes:






VCC = 80% (VCES), VGE = 20V.
R is measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Maximum limits are based on statistical sample size characterization.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
2
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August 22, 2014
IRGP4790PbF/IRGP4790-EPbF
140
For both:
Duty cycle : 50%
Tj = 175°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 208.3W
Load Current ( A )
120
100
Square Wave:
80
VCC
60
I
40
Diode as specified
20
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
160
500
140
400
120
Ptot (W)
IC (A)
100
80
60
300
200
40
100
20
0
25
50
75
100
125
150
0
175
25
TC (°C)
50
75
100
125
150
175
TC (°C)
Fig. 3 - Power Dissipation vs.
Case Temperature
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
1000
1000
100
10
100
IC (A)
IC (A)
10µsec
100µsec
10
1msec
1
DC
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
1
10
100
1000
10000
VCE (V)
Fig. 4 - Forward SOA
TC = 25°C; TJ ≤ 175°C; VGE = 15V
3
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10
100
1000
VCE (V)
Fig. 5 - Reverse Bias SOA
TJ = 175°C; VGE = 20V
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August 22, 2014
IRGP4790PbF/IRGP4790-EPbF
300
300
VGE = 18V
VGE = 18V
VGE = 15V
250
VGE = 15V
250
VGE = 12V
200
VGE = 10V
200
VGE = 8.0V
ICE (A)
ICE (A)
VGE = 12V
VGE = 10V
150
VGE = 8.0V
150
100
100
50
50
0
0
0
2
4
6
8
10
0
2
4
6
8
10
V CE (V)
V CE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 20µs
12
300
VGE = 18V
VGE = 15V
250
10
ICE = 38A
ICE = 75A
VGE = 12V
VGE = 10V
8
VGE = 8.0V
V CE (V)
ICE (A)
200
150
ICE = 150A
6
100
4
50
2
0
0
0
2
4
6
8
5
10
10
Fig. 8 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 20µs
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
12
12
10
10
ICE = 38A
ICE = 75A
8
ICE = 38A
ICE = 75A
8
ICE = 150A
V CE (V)
V CE (V)
20
V GE (V)
V CE (V)
6
ICE = 150A
6
4
4
2
2
0
0
5
10
15
20
V GE (V)
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
4
15
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5
10
15
20
V GE (V)
Fig. 11 - Typical VCE vs. VGE
TJ = 175°C
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August 22, 2014
IRGP4790PbF/IRGP4790-EPbF
225
12
180
10
8
90
Energy (mJ)
ICE (A)
135
TJ = 25°C
TJ = 175°C
45
EON
6
4
EOFF
2
0
2
4
6
8
10
12
14
0
16
0
25
50
75
V GE (V)
100
125
150
IC (A)
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10; VGE = 15V
1000
11
10
tdOFF
9
Energy (mJ)
Swiching Time (ns)
8
tF
100
tdON
7
6
EON
5
4
tR
EOFF
3
2
10
0
0
50
100
25
50
150
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 75A; VGE = 15V
10000
24
400
Tsc
20
Swiching Time (ns)
100
Rg ()
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10; VGE = 15V
75
330
Isc
1000
Time (µs)
tF
tR
100
tdON
260
12
190
8
120
4
10
0
20
40
60
80
100
120
R G ()
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 75A; VGE = 15V
5
16
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Current (A)
tdOFF
50
8
10
12
14
16
18
VGE (V)
Fig. 17 - VGE vs. Short Circuit Time
VCC = 400V; TC = 150°C
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August 22, 2014
IRGP4790PbF/IRGP4790-EPbF
16
10000
VGE, Gate-to-Emitter Voltage (V)
Capacitance (pF)
Cies
1000
Coes
100
Cres
VCES = 400V
VCES = 300V
14
12
10
10
8
6
4
2
0
0
100
200
300
400
500
0
20
40
V CE (V)
60
80
100 120 140 160
Q G, Total Gate Charge (nC)
Fig. 19 - Typical Gate Charge vs. VGE
ICE = 75A
Fig. 18 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
1
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20
0.10
0.05
0.01
J
0.02
0.01
R1
R1
J
1
R2
R2
R3
R3
R4
R4
C
2
1
2
3
4
3
4
Ci= iRi
Ci= iRi
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
C
Ri (°C/W)
i (sec)
0.0125052
0.000036
0.0722526
0.000151
0.1389474
0.005683
0.1056000
0.029339
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 20 - Maximum Transient Thermal Impedance, Junction-to-Case
Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
6
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IRGP4790PbF/IRGP4790-EPbF
L
L
80 V +
VCC
DUT
0
-
DUT
VCC
Rg
1K
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
DC
VCC
DUT
DUT /
DRIVER
VCC
Rg
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
C force
100K
D1
4X
DC
22K
C sense
VCC
DUT
G force
DUT
0.0075µF
E sense
E force
Fig.C.T.5 - Resistive Load Circuit
7
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Fig.C.T.6 - BVCES Filter Circuit
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IRGP4790PbF/IRGP4790-EPbF
600
120
tf
120
600
tr
500
100
500
400
80
400
60
300
TEST
CURRENT
100
80
40
60
90% ICE
40
200
ICE (A)
200
VCE (V)
300
ICE (A)
VCE (V)
90% ICE
10% VCE
100
20
10% ICE
0
0
0
10% ICE
-100
1
20
0
0
-20
0.5
-0.5
0
time(µs)
-20
0.5
time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
600
600
500
VCE
400
400
300
300
ICE
200
200
100
100
Ice (A)
500
Vce (V)
10% VCE
Eon Loss
Eoff Loss
-100
-0.5
100
0
0
-100
-100
-5
0
5
10
time (µs)
Fig. WF3 - Typ. S.C. Waveform
@ TJ = 150°C using Fig. CT.3
8
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IRGP4790PbF/IRGP4790-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
LOT CODE 5657
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
Note: "P" in assembly line position
indicates "Lead-Free"
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
IRFPE30
56
135H
57
ASSEMBLY
LOT CODE
DATE CODE
YEAR 1 = 2001
WEEK 35
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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August 22, 2014
IRGP4790PbF/IRGP4790-EPbF
TO-247AD Package Outline (Dimensions are shown in millimeters (inches))
TO-247AD Part Marking Information
E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E
W IT H A S S E M B L Y
LO T C O D E 5657
ASSEM B LED O N W W 35, 2000
IN T H E A S S E M B L Y L IN E "H "
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d - F re e "
PART N U M BER
IN T E R N A T IO N A L
R E C T IF IE R
LO G O
56
035H
57
ASSEM B LY
LO T C O D E
D A TE C O D E
YE A R 0 = 2 0 0 0
W EEK 35
L IN E H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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August 22, 2014
IRGP4790PbF/IRGP4790-EPbF
Qualification Information†
Industrial
Qualification Level
TO-247AC
Moisture Sensitivity Level
(per JEDEC JESD47F)††
N/A
TO-247AD
N/A
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
††
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
8/22/2014
Comments
 Updated Temperature Coeff. of Breakdown Voltage from “0.11V/C” to “0.65 V/C” on page 2 .
Updated IC vs. TC graph Fig.2 to match page1 spec data on page 3.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
11
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August 22, 2014