SGP30N60 Data Sheet (346 KB, EN)

SGP30N60
SGW30N60
Fast IGBT in NPT-technology
C
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
G
PG-TO-220-3-1
E
PG-TO-247-3-21
1
• Qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC
VCE(sat)
Tj
Marking
Package
SGP30N60
600V
30A
2.5V
150°C
G30N60
PG-TO-220-3-1
SGW30N60
600V
30A
2.5V
150°C
G30N60
PG-TO-247-3-21
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCE
DC collector current
IC
Value
600
Unit
V
A
TC = 25°C
41
TC = 100°C
30
Pulsed collector current, tp limited by Tjmax
ICpul s
112
Turn off safe operating area
-
112
Gate-emitter voltage
VGE
±20
V
Avalanche energy, single pulse
EAS
165
mJ
tSC
10
µs
Ptot
250
W
-55...+150
°C
VCE ≤ 600V, Tj ≤ 150°C
IC = 30 A, VCC = 50 V, RGE = 25 Ω ,
start at Tj = 25°C
2
Short circuit withstand time
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Tj , Tstg
Soldering temperature,
Ts
260
wavesoldering, 1.6mm (0.063 in.) from case for 10s
1
2
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.3
Sep. 07
SGP30N60
SGW30N60
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
0.5
K/W
Characteristic
RthJC
IGBT thermal resistance,
junction – case
RthJA
Thermal resistance,
junction – ambient
PG-TO-220-3-1
62
PG-TO-247-3-21
40
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
600
-
-
1.7
2.1
2.4
T j =1 5 0° C
-
2.5
3.0
3
4
5
Unit
Static Characteristic
Collector-emitter breakdown voltage
V ( B R ) C E S V G E = 0V , I C = 5 00 µA
Collector-emitter saturation voltage
VCE(sat)
V
V G E = 15 V , I C = 30 A
T j =2 5 °C
Gate-emitter threshold voltage
VGE(th)
I C = 70 0 µA , V C E = V G E
Zero gate voltage collector current
ICES
V C E = 60 0 V, V G E = 0 V
µA
T j =2 5 °C
-
-
40
T j =1 5 0° C
-
-
3000
Gate-emitter leakage current
IGES
V C E = 0V , V G E =2 0 V
-
-
100
nA
Transconductance
gfs
V C E = 20 V , I C = 30 A
-
20
-
S
Input capacitance
Ciss
V C E = 25 V ,
-
1600
1920
pF
Output capacitance
Coss
V G E = 0V ,
-
150
180
Reverse transfer capacitance
Crss
f= 1 MH z
-
92
110
Gate charge
QGate
V C C = 48 0 V, I C =3 0 A
-
140
182
nC
PG-TO-220-3-1
-
7
-
nH
PG-TO-247-3-21
-
13
V G E = 15 V ,t S C ≤ 10 µs
V C C ≤ 6 0 0 V,
T j ≤ 1 5 0° C
-
300
-
A
Dynamic Characteristic
V G E = 15 V
LE
Internal emitter inductance
measured 5mm (0.197 in.) from case
2)
Short circuit collector current
2)
IC(SC)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.3
Sep. 07
SGP30N60
SGW30N60
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
Value
min.
typ.
max.
-
44
53
-
34
40
-
291
349
-
58
70
-
0.64
0.77
-
0.65
0.85
-
1.29
1.62
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
T j =2 5 °C ,
V C C = 40 0 V, I C = 3 0 A,
V G E = 0/ 15 V ,
R G =11Ω ,
1)
L σ = 18 0 nH ,
1)
C σ = 90 0 pF
Energy losses include
“tail” and diode
reverse recovery.
ns
mJ
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
Value
min.
typ.
max.
-
44
53
-
34
40
-
324
389
-
67
80
-
0.98
1.18
-
0.92
1.19
-
1.90
2.38
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
1)
T j =1 5 0° C
V C C = 40 0 V, I C = 3 0 A,
V G E = 0/ 15 V ,
R G = 1 1Ω ,
1)
L σ = 18 0 nH ,
1)
C σ = 90 0 pF
Energy losses include
“tail” and diode
reverse recovery.
ns
mJ
Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.
3
Rev. 2.3
Sep. 07
SGP30N60
SGW30N60
160A
Ic
140A
tp=4µs
100A
15µs
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
120A
100A
80A
TC=80°C
60A
TC=110°C
40A
20A
0A
10Hz
50µs
10A
200µs
1ms
1A
Ic
DC
0.1A
100Hz
1kHz
10kHz
1V
100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 11Ω)
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤ 150°C)
300W
60A
250W
50A
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
Limited by bond wire
200W
150W
100W
50W
0W
25°C
40A
30A
20A
10A
50°C
75°C
100°C
0A
25°C
125°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(Tj ≤ 150°C)
50°C
75°C
100°C
125°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE ≤ 15V, Tj ≤ 150°C)
4
Rev. 2.3
Sep. 07
90A
90A
80A
80A
70A
70A
60A
50A
40A
30A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
SGP30N60
SGW30N60
VGE=20V
15V
13V
11V
9V
7V
5V
20A
10A
0A
0V
1V
2V
3V
4V
15V
13V
11V
9V
7V
5V
50A
40A
30A
20A
0A
0V
5V
Tj=+25°C
-55°C
+150°C
80A
70A
60A
50A
40A
30A
20A
10A
2V
4V
6V
8V
10V
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
90A
1V
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150°C)
100A
IC, COLLECTOR CURRENT
VGE=20V
10A
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
0A
0V
60A
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 10V)
4.0V
3.5V
IC = 60A
3.0V
IC = 30A
2.5V
2.0V
1.5V
1.0V
-50°C
0°C
50°C
100°C
150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
5
Rev. 2.3
Sep. 07
SGP30N60
SGW30N60
1000ns
1000ns
td(off)
100ns
t, SWITCHING TIMES
t, SWITCHING TIMES
td(off)
tf
td(on)
100ns
tf
td(on)
tr
tr
10ns
10A
20A
30A
40A
50A
10ns
0Ω
60A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 11Ω,
Dynamic test circuit in Figure E)
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
t, SWITCHING TIMES
100ns
tf
tr
td(on)
10ns
0°C
50°C
100°C
20Ω
30Ω
40Ω
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, IC = 30A,
Dynamic test circuit in Figure E)
1000ns
td(off)
10Ω
150°C
5.5V
5.0V
4.5V
4.0V
max.
3.5V
typ.
3.0V
2.5V
min.
2.0V
-50°C
Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 30A, RG = 11Ω,
Dynamic test circuit in Figure E)
0°C
50°C
100°C
150°C
Tj, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.7mA)
6
Rev. 2.3
Sep. 07
SGP30N60
SGW30N60
4.0mJ
5.0mJ
4.0mJ
3.5mJ
3.0mJ
2.5mJ
Eon*
2.0mJ
Eoff
1.5mJ
1.0mJ
Ets*
2.5mJ
2.0mJ
1.5mJ
Eoff
Eon*
1.0mJ
20A
30A
40A
50A
60A
0.0mJ
0Ω
70A
10Ω
20Ω
30Ω
40Ω
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 11Ω,
Dynamic test circuit in Figure E)
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, IC = 30A,
Dynamic test circuit in Figure E)
3.0mJ
10 K/W
0
*) Eon and Ets include losses
due to diode recovery.
2.0mJ
Ets*
1.5mJ
Eon*
1.0mJ
Eoff
0.5mJ
0.0mJ
0°C
ZthJC, TRANSIENT THERMAL IMPEDANCE
2.5mJ
E, SWITCHING ENERGY LOSSES
3.0mJ
0.5mJ
0.5mJ
0.0mJ
10A
*) Eon and Ets include losses
due to diode recovery.
3.5mJ
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
4.5mJ
Ets*
*) Eon and Ets include losses
due to diode recovery.
D=0.5
-1
10 K/W
0.2
0.1
0.05
-2
0.02
10 K/W
R,(1/W)
0.3681
0.0938
0.0380
0.01
-3
10 K/W
R1
τ, (s)
0.0555
1.26*10-3
1.49*10-4
R2
single pulse
C 1= τ1/R 1
C 2= τ2/R 2
-4
50°C
100°C
10 K/W
1µs
150°C
10µs
100µs
1ms
10ms 100ms
1s
tp, PULSE WIDTH
Tj, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 30A, RG = 11Ω,
Dynamic test circuit in Figure E)
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = tp / T)
7
Rev. 2.3
Sep. 07
SGP30N60
SGW30N60
25V
120V
480V
15V
10V
Coss
100pF
Crss
5V
0V
0nC
50nC
100nC
150nC
10pF
0V
200nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC = 30A)
20V
30V
IC(sc), SHORT CIRCUIT COLLECTOR CURRENT
500A
20 µ s
15 µ s
10 µ s
5µ s
0µ s
10V
10V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(VGE = 0V, f = 1MHz)
25 µ s
tsc, SHORT CIRCUIT WITHSTAND TIME
Ciss
1nF
C, CAPACITANCE
VGE, GATE-EMITTER VOLTAGE
20V
11V
12V
13V
14V
450A
400A
350A
300A
250A
200A
150A
100A
50A
0A
10V
15V
VGE, GATE-EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE = 600V, start at Tj = 25°C)
12V
14V
16V
18V
20V
VGE, GATE-EMITTER VOLTAGE
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(VCE ≤ 600V, Tj = 150°C)
8
Rev. 2.3
Sep. 07
SGP30N60
SGW30N60
PG-TO-220-3-1
9
Rev. 2.3
Sep. 07
SGP30N60
SGW30N60
PG-TO247-3-21
10
Rev. 2.3
Sep. 07
SGP30N60
SGW30N60
τ1
τ2
r1
r2
τn
rn
Tj (t)
p(t)
r1
r2
rn
TC
Figure D. Thermal equivalent
circuit
Figure A. Definition of switching times
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Leakage inductance Lσ =180nH
an d Stray capacity C σ =900pF.
11
Rev. 2.3
Sep. 07
SGP30N60
SGW30N60
Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 9/13/07.
All Rights Reserved.
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characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
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12
Rev. 2.3
Sep. 07