IHW15N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior • Low EMI 1 • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ C G E PG-TO-247-3-21 Applications: • Inductive Cooking • Soft Switching Applications Type IHW15N120R2 VCE IC VCE(sat),Tj=25°C Tj,max Marking Package 1200V 15A 1.5V 175°C H15R1202 PG-TO-247-3-21 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DC collector current TC = 25°C TC = 100°C IC Pulsed collector current, tp limited by Tjmax ICpul s 45 Turn off safe operating area (VCE ≤ 1200V, Tj ≤ 175°C) - 45 Diode forward current IF A 30 15 TC = 25°C 30 TC = 100°C 15 Diode pulsed current, tp limited by Tjmax IFpul s Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp ≤ 2.5µs, sine halfwave TC = 100°C, tp ≤ 2.5µs, sine halfwave IFSM Gate-emitter voltage VGE Transient Gate-emitter voltage (tp < 5 ms) 45 50 130 120 ±20 V ±25 Power dissipation TC = 25°C Ptot Operating junction temperature 357 W Tj -40...+175 °C Storage temperature Tstg -55...+175 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 Mounting Torque Ms 0.6 1 Nm J-STD-020 and JESD-022 Power Semiconductors 1 Rev. 1.2 May 06 IHW15N120R2 Soft Switching Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 0.52 K/W RthJCD 0.47 Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, RthJA 40 junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value min. typ. max. 1200 - - T j =2 5 °C - 1.5 1.75 T j =1 2 5° C - 1.7 - T j =1 7 5° C - 1.8 - T j =2 5 °C - 1.45 1.65 T j =1 2 5° C - 1.55 - T j =1 7 5° C - 1.6 - 5.1 5.8 6.4 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µA Collector-emitter saturation voltage VCE(sat) Diode forward voltage VF V V G E = 15 V , I C = 15 A V G E = 0V , I F = 1 5 A Gate-emitter threshold voltage VGE(th) I C = 0. 4m A, VCE=VGE Zero gate voltage collector current ICES V C E = 12 0 0V , V G E = 0V µA T j =2 5 °C - - 5 T j =1 7 5° C - - 2500 Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 100 nA Transconductance gfs V C E = 20 V , I C = 15 A - 11.7 - S Integrated gate resistor RGint Power Semiconductors none 2 Ω Rev. 1.2 May 06 IHW15N120R2 Soft Switching Series Dynamic Characteristic Input capacitance Ciss V C E = 25 V , - 1530 - Output capacitance Coss V G E = 0V , - 49 - Reverse transfer capacitance Crss f= 1 MH z - 39 - Gate charge QGate V C C = 96 0 V, I C =1 5 A - 133 - nC - 13 - nH pF V G E = 15 V Internal emitter inductance LE measured 5mm (0.197 in.) from case Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value min. typ. max. - 282 - - 62 - - 0.9 - - 0.9 - Unit IGBT Characteristic Turn-off delay time td(off) Fall time tf Turn-off energy Eoff Total switching energy Ets T j =2 5 °C , V C C = 60 0 V, I C = 1 5 A V G E = 0 /1 5 V, R G = 14 . 8Ω, 2) L σ =2 3 0n H, 2) C σ = 3 9p F Switching Characteristic, Inductive Load, at Tj=175 °C Parameter Symbol Conditions Value min. typ. max. - 342 - - 90 - - 1.3 - - 1.3 - Unit IGBT Characteristic Turn-off delay time td(off) Fall time tf Turn-off energy Eoff Total switching energy Ets 2) T j =1 7 5° C V C C = 60 0 V, I C = 1 5 A, V G E = 0 / 15 V , R G = 1 4. 8Ω , 2) L σ =2 3 0n H , 2) C σ =3 9 pF Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E. Power Semiconductors 3 Rev. 1.2 May 06 IHW15N120R2 Soft Switching Series tp=1µs 10µs TC=80°C IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 40A TC=110°C 30A 20A Ic 10A 10A 50µs 200µs 1A 1ms 10ms 0A 10Hz DC 100Hz 1kHz 10kHz 100kHz 1V f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency for hard switching (turn-off) (Tj ≤ 175°C, D = 0.5, VCE = 600V, VGE = 0/+15V, RG = 14.8Ω) 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. IGBT Safe operating area (D = 0, TC = 25°C, Tj ≤175°C;VGE=15V) 250W IC, COLLECTOR CURRENT Ptot, DISSIPATED POWER 30A 200W 150W 100W 20A 10A 50W 0W 25°C 50°C 75°C 100°C 125°C 0A 25°C 150°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 175°C) Power Semiconductors 50°C 75°C 100°C 125°C 150°C TC, CASE TEMPERATURE Figure 4. DC Collector current as a function of case temperature (VGE ≥ 15V, Tj ≤ 175°C) 4 Rev. 1.2 May 06 IHW15N120R2 Soft Switching Series 40A VGE=20V VGE=20V 15V 30A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 40A 13V 11V 9V 20A 7V 10A 13V 11V 9V 20A 7V 10A 0A 0A 0V 1V 0V 2V 40A TJ=175°C 25°C 30A 20A 10A 0A 0V 2V 4V 6V 8V 10V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) Power Semiconductors 1V 2V 3V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175°C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC, COLLECTOR CURRENT 15V 30A IC=30A 2.5V 2.0V IC=15A 1.5V IC=7.5A 1.0V 0.5V 0.0V -50°C 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE =15V) 5 Rev. 1.2 May 06 IHW15N120R2 Soft Switching Series td(off) t, SWITCHING TIMES t, SWITCHING TIMES td(off) 100ns tf 10ns 100ns tf 10ns 0A 10A 20A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE=600V, VGE=0/15V, RG=14.8Ω, Dynamic test circuit in Figure E) 10Ω 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=175°C, VCE=600V, VGE=0/15V, IC=15A, Dynamic test circuit in Figure E) VGE(th), GATE-EMITT TRSHOLD VOLTAGE t, SWITCHING TIMES td(off) 100ns tf 10ns 25°C 50°C 75°C 100°C 125°C max. 5V typ. 4V min. 3V 2V -50°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=15A, RG=14.8Ω, Dynamic test circuit in Figure E) Power Semiconductors 6V 0°C 50°C 100°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.4mA) 6 Rev. 1.2 May 06 IHW15N120R2 Soft Switching Series 2.0mJ E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 1.8mJ Eoff 1.5mJ 1.0mJ 0.5mJ 1.5mJ 1.3mJ 1.0mJ 0.8mJ 0.5mJ 0.3mJ 0.0mJ 0.0mJ 0A 5A 10A 15A 20A 10Ω 25A IC, COLLECTOR CURRENT Figure 13. Typical turn-off energy as a function of collector current (inductive load, TJ=175°C, VCE=600V, VGE=0/15V, RG=14.8Ω, Dynamic test circuit in Figure E) E, SWITCHING ENERGY LOSSES Eoff 0.6mJ 0.4mJ 0.2mJ 0.0mJ 25°C 30Ω 40Ω 1.5mJ 1.0mJ 0.8mJ 20Ω 50°C 75°C 60Ω 70Ω 100°C 125°C 150°C Eoff 1.0mJ 0.5mJ 0.0mJ 400V TJ, JUNCTION TEMPERATURE Figure 15. Typical turn-off energy as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=15A, RG=14.8Ω, Dynamic test circuit in Figure E) Power Semiconductors 50Ω RG, GATE RESISTOR Figure 14. Typical turn-off energy as a function of gate resistor (inductive load, TJ=175°C, VCE=600V, VGE=0/15V, IC=15A, Dynamic test circuit in Figure E) 1.2mJ E, SWITCHING ENERGY LOSSES Eoff 500V 600V 700V 800V 900V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical turn-off energy as a function of collector emitter voltage (inductive load, TJ=175°C, VGE=0/15V, IC=15A, RG=14.8Ω, Dynamic test circuit in Figure E) 7 Rev. 1.2 May 06 IHW15N120R2 Soft Switching Series 240V 960V 10V 100pF Coss 5V Crss 0V 10pF 0nC 50nC 100nC 150nC 200nC D=0.5 0.2 -1 10 K/W 0.1 0.05 0.02 τ, (s) 9.37*10-2 1.20*10-2 1.03*10-3 1.15*10-4 R,(K/W) 0.0861 0.1702 0.1372 0.0454 R1 R2 0.01 single pulse C 1 = τ 1 /R 1 C 2 = τ 2 /R 2 10V 20V D=0.5 -1 10 K/W 0.2 R,(K/W) 0.1092 0.1517 0.1148 0.0198 0.1 τ, (s) 7.41*10-2 8.77*10-3 5.58*10-4 3.81*10-5 R1 0.05 R2 0.02 C 1 = τ 1 /R 1 0.01 C 2 = τ 2 /R 2 single pulse -2 -2 10 K/W 0V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) ZthJC, TRANSIENT THERMAL RESISTANCE QGE, GATE CHARGE Figure 17. Typical gate charge (IC=15 A) ZthJC, TRANSIENT THERMAL RESISTANCE Ciss 1nF c, CAPACITANCE VGE, GATE-EMITTER VOLTAGE 15V 10 K/W 10µs 100µs 1ms 10ms 100ms tP, PULSE WIDTH Figure 19. IGBT transient thermal resistance (D = tp / T) Power Semiconductors 10µs 100µs 1ms 10ms 100ms tP, PULSE WIDTH Figure 20. Typical Diode transient thermal impedance as a function of pulse width (D=tP/T) 8 Rev. 1.2 May 06 IHW15N120R2 Soft Switching Series IF=30A 2.0V 40A 15A VF, FORWARD VOLTAGE IF, FORWARD CURRENT 35A 30A 25A TJ=25°C 20A 175°C 15A 10A 1.5V 7.5A 1.0V 0.5V 5A 0A 0.0V 0.0V 0.5V 1.0V 1.5V 2.0V VF, FORWARD VOLTAGE Figure 21. Typical diode forward current as a function of forward voltage Power Semiconductors 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 22. Typical diode forward voltage as a function of junction temperature 9 Rev. 1.2 May 06 IHW15N120R2 Soft Switching Series PG-TO247-3-21 Power Semiconductors 10 Rev. 1.2 May 06 IHW15N120R2 Soft Switching Series i,v tr r =tS +tF diF /dt Qr r =QS +QF IF tS QS Ir r m tr r tF QF 10% Ir r m dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics τ1 τ2 r1 r2 τn rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Lσ =180nH an d Stray capacity C σ =39pF. Figure B. Definition of switching losses Power Semiconductors 11 Rev. 1.2 May 06 IHW15N120R2 Soft Switching Series Power Semiconductors 12 Rev. 1.2 May 06