IPI020N06N Data Sheet (619 KB, EN)

Type
IPI020N06N
OptiMOSTM Power-Transistor
Features
Product Summary
• Optimized for high performance SMPS, e.g. sync. rec.
• 100% avalanche tested
• Superior thermal resistance
• N-channel
1)
• Qualified according to JEDEC for target applications
VDS
60
V
RDS(on),max
2.0
mW
ID
120
A
QOSS
119
nC
QG(0V..10V)
106
nC
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
PG-TO262-3
Type
Package
Marking
IPI020N06N
PG-TO262-3
020N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
V GS=10 V, T C=25 °C
120
V GS=10 V, T C=100 °C
120
V GS=10 V, T C=25 °C,
R thJA =50K/W
29
Unit
A
Pulsed drain current2)
I D,pulse
T C=25 °C
480
Avalanche energy, single pulse3)
E AS
I D=100 A, R GS=25 W
420
mJ
Gate source voltage
V GS
±20
V
1)
J-STD20 and JESD22
2)
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev.2.2
page 1
2012-12-20
IPI020N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot
Operating and storage temperature
Value
T C=25 °C
214
T A=25 °C,
R thJA=50 K/W
3.0
T j, T stg
W
-55 ... 175
IEC climatic category; DIN IEC 68-1
Parameter
Unit
°C
55/175/56
Values
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R thJC
bottom
-
-
0.7
Device on PCB
R thJA
minimal footprint
-
-
62
6 cm² cooling area4)
-
-
40
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
60
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=143 µA
2.1
2.8
3.3
Zero gate voltage drain current
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
-
0.5
1
V DS=60 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=100 A
-
1.8
2
mW
V GS=6 V, I D=25 A
-
2.1
3.0
-
1.6
2.4
W
100
210
-
S
Gate resistance
RG
Transconductance
g fs
Rev.2.2
|V DS|>2|I D|R DS(on)max,
I D=100 A
page 2
2012-12-20
IPI020N06N
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
7800
9750
-
1800
2250
Dynamic characteristics
Input capacitance
C iss
V GS=0 V, V DS=30 V,
f =1 MHz
pF
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
69
138
Turn-on delay time
t d(on)
-
24
-
Rise time
tr
-
45
-
Turn-off delay time
t d(off)
-
51
-
Fall time
tf
-
19
-
Gate to source charge
Q gs
-
35
-
Gate charge at threshold
Q g(th)
-
22
-
Gate to drain charge
Q gd
-
19
25
Switching charge
Q sw
-
33
-
Gate charge total
Qg
-
106
124
Gate plateau voltage
V plateau
-
4.5
-
V
Gate charge total, sync. FET
Q g(sync)
V DS=0.1 V,
V GS=0 to 10 V
-
94
-
nC
Output charge
Q oss
V DD=30 V, V GS=0 V
-
119
-
-
-
120
-
-
480
-
0.9
1.2
V
-
76
122
ns
-
97
-
nC
V DD=30 V, V GS=10 V,
I D=100 A,
R G,ext,ext=3 W
ns
Gate Charge Characteristics5)
V DD=30 V, I D=100 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode continuous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
5)
A
T C=25 °C
V GS=0 V, I F=100 A,
T j=25 °C
V R=30 V, I F=100 A ,
di F/dt =100 A/µs
See figure 16 for gate charge parameter definition
Rev.2.2
page 3
2012-12-20
IPI020N06N
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
240
140
220
120
200
180
100
160
80
ID [A]
Ptot [W]
140
120
60
100
80
40
60
40
20
20
0
0
0
25
50
75
100
125
150
175
200
0
25
50
TC [°C]
75
100
125
150
175
200
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
10
limited by on-state
resistance
1 µs
10 µs
102
1
100 µs
0.5
ZthJC [K/W]
1 ms
ID [A]
10 ms
101
DC
0.2
0.1
0.1
0.05
0.02
100
0.01
0.01
single pulse
10-1
10-1
100
101
102
VDS [V]
Rev.2.2
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
tp [s]
page 4
2012-12-20
IPI020N06N
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
480
5
10 V
440
6V
5V
7V
5.5 V
400
4
360
5.5 V
RDS(on) [mW]
320
ID [A]
280
240
200
5V
3
6V
7V
2
10 V
160
120
1
80
40
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
80
160
VDS [V]
240
320
400
480
100
120
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
480
240
440
400
200
360
320
160
gfs [S]
ID [A]
280
240
120
200
160
80
120
80
40
40
25 °C
175 °C
0
0
0
2
4
6
8
VGS [V]
Rev.2.2
0
20
40
60
80
ID [A]
page 5
2012-12-20
IPI020N06N
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=100 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
4.5
5
4
4
3.5
3
max
2.5
2
VGS(th) [V]
RDS(on) [mW]
3
typ
1430 mA
143 µA
2
1.5
1
1
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
Tj [°C]
60
100
140
180
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
103
10000
Ciss
Coss
102
1000
IF [A]
C [pF]
103
25 °C
175 °C
102
101
100
Crss
101
100
10
0
20
40
60
VDS [V]
Rev.2.2
0
0.5
1
1.5
2
VSD [V]
page 6
2012-12-20
IPI020N06N
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 W
V GS=f(Q gate); I D=100 A pulsed
parameter: T j(start)
parameter: V DD
1000
12
30 V
10
12 V
100
48 V
8
100 °C
VGS [V]
IAV [A]
25 °C
125 °C
10
6
4
2
1
1
10
100
0
1000
0
20
tAV [µs]
40
60
80
100
120
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
70
V GS
Qg
VBR(DSS) [V]
66
62
V gs(th)
58
54
Q g(th)
Q sw
Q gs
50
-60
-20
20
60
100
140
Q gate
Q gd
180
Tj [°C]
Rev.2.2
page 7
2012-12-20
IPI020N06N
Package Outline
Rev.2.2
PG-TO262-3
page 8
2012-12-20
IPI020N06N
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev.2.2
page 9
2012-12-20