IPP055N03L G Type IPB055N03L G !"#$%!&™3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS(on),max 5.5 mW ID 50 A 1) • Qualified according to JEDEC for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche rated • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Type IPP055N03L G IPB055N03L G Package PG-TO220-3-1 PG-TO263-3 Marking 055N03L 055N03L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value V GS=10 V, T C=25 °C 50 V GS=10 V, T C=100 °C 50 V GS=4.5 V, T C=25 °C 50 V GS=4.5 V, T C=100 °C 50 Unit A Pulsed drain current2) I D,pulse T C=25 °C 350 Avalanche current, single pulse3) I AS T C=25 °C 50 Avalanche energy, single pulse E AS I D=35 A, R GS=25 W 60 mJ Reverse diode dv /dt dv /dt I D=50 A, V DS=24 V, di /dt =200 A/µs, T j,max=175 °C 6 kV/µs Gate source voltage V GS 1) ±20 V J-STD20 and JESD22 Rev. 1.03 page 1 2009-09-22 IPP055N03L G IPB055N03L G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot Operating and storage temperature T j, T stg Value T C=25 °C IEC climatic category; DIN IEC 68-1 Parameter Unit 68 W -55 ... 175 °C 55/175/56 Values Symbol Conditions Unit min. typ. max. - - 2.2 minimal footprint - - 62 6 cm² cooling area4) - - 40 Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 30 - - Gate threshold voltage V GS(th) V DS=V GS, I D=250 µA 1 - 2.2 Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=30 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance5) R DS(on) V GS=4.5 V, I D=30 A - 6.2 7.8 mW V GS=10 V, I D=30 A - 4.6 5.5 - 1.5 - W 38 75 - S Gate resistance RG Transconductance g fs 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information |V DS|>2|I D|R DS(on)max, I D=30 A 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 5) Measured from drain tab to source pin Rev. 1.03 page 2 2009-09-22 IPP055N03L G IPB055N03L G Parameter Values Symbol Conditions Unit min. typ. max. - 2400 3200 - 920 1200 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=15 V, f =1 MHz Output capacitance C oss Reverse transfer capacitance Crss - 49 - Turn-on delay time t d(on) - 6.7 - Rise time tr - 5.2 - Turn-off delay time t d(off) - 25 - Fall time tf - 4.0 - Gate to source charge Q gs - 7.5 - Gate charge at threshold Q g(th) - 3.8 - Gate to drain charge Q gd - 3.5 - Switching charge Q sw - 7.1 - Gate charge total Qg - 15 - Gate plateau voltage V plateau - 3.1 - Gate charge total Qg V DD=15 V, I D=30 A, V GS=0 to 10 V - 31 - Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 4.5 V - 13 - Output charge Q oss V DD=15 V, V GS=0 V - 24 - - - 50 - - 350 V DD=15 V, V GS=10 V, I D=30 A, R G=1.6 W pF ns Gate Charge Characteristics5) V DD=15 V, I D=30 A, V GS=0 to 4.5 V nC V nC Reverse Diode Diode continuous forward current IS A T C=25 °C Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=30 A, T j=25 °C - 0.88 1.1 V Reverse recovery charge Q rr V R=15 V, I F=I S, di F/dt =400 A/µs - - 20 nC 6) See figure 16 for gate charge parameter definition Rev. 1.03 page 3 2009-09-22 IPP055N03L G IPB055N03L G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS!10 V 80 60 50 60 I D [A] P tot [W] 40 40 30 20 20 10 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 10 limited by on-state resistance 1 µs 10 µs 102 100 µs 0.5 1 10 Z thJC [K/W] I D [A] DC 1 1 ms 0.2 0.1 0.05 10 ms 0.1 10 0.02 0 0.01 single pulse 10-1 10-1 0.01 100 101 102 0 -6 10 0 -5 10 0 -4 10 0 -3 10 0 -2 10 1 -1 10 0 t p [s] V DS [V] Rev. 1.03 0 10 page 4 2009-09-22 IPP055N03L G IPB055N03L G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 160 20 5V 10 V 3V 4.5 V 3.2 V 16 3.5 V 120 R DS(on) [mW ] I D [A] 4V 80 12 4V 8 3.5 V 4.5 V 5V 40 10 V 3.2 V 4 11.5 V 3V 2.8 V 0 0 0 1 2 3 0 20 40 V DS [V] 60 80 100 80 100 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 160 160 120 120 g fs [S] I D [A] parameter: T j 80 40 80 40 175 °C 25 °C 0 0 0 1 2 3 4 5 Rev. 1.03 0 20 40 60 I D [A] V GS [V] page 5 2009-09-22 IPP055N03L G IPB055N03L G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=30 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=250 µA 2.5 8 2 98 % 6 1.5 V GS(th) [V] R DS(on) [mW ] 10 typ 4 1 2 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 1000 10000 25 °C Ciss 103 25 °C, 98% Coss 100 1000 I F [A] C [pF] 175 °C, 98% 102 175 °C 10 100 Crss 101 1 10 0 5 10 15 20 25 30 Rev. 1.03 0.0 0.5 1.0 1.5 2.0 V SD [V] V DS [V] page 6 2009-09-22 IPP055N03L G IPB055N03L G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=30 A pulsed parameter: T j(start) parameter: V DD 100 12 15 V 6V 10 24 V 25 °C 8 V GS [V] I AV [A] 100 °C 150 °C 10 6 4 2 1 0 10-1 100 101 102 103 0 10 t AV [µs] 20 30 40 Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 34 V GS Qg 32 V BR(DSS) [V] 30 28 26 V g s(th) 24 Q g (th) 22 Q sw Q gs 20 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 1.03 page 7 2009-09-22 IPP055N03L G IPB055N03L G Package Outline Footprint: Rev. 1.03 PG-TO220-3-1 Packaging: page 8 2009-09-22 IPP055N03L G IPB055N03L G Package Outline Rev. 1.03 PG-TO263-3 page 9 2009-09-22 IPP055N03L G IPB055N03L G 5 # ,*3)& % # 9 .'*.& /. & $ )./,/( *& 3 <.$ )& . & 2- " .9 ; .'*.& /. & $ )./,/( *& 3 ,, *( )4 3 & 3& 26& % 4 4& .4 */. 0,& " 3& )& *.'/2- " 4 */. 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