IPL65R660E6 Data Sheet (1.6 MB, EN)

MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™ThinkPAK8x8
650VCoolMOS™E6PowerTransistor
IPL65R660E6
DataSheet
Rev.2.1
Final
Industrial&Multimarket
650VCoolMOS™E6PowerTransistor
IPL65R660E6
1Description
ThinPAK8x8
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.650VCoolMOS™E6series
combinestheexperienceoftheleadingSJMOSFETsupplierwithhigh
classinnovation.
TheresultingdevicesprovideallbenefitsofafastswitchingSJMOSFET
whileofferinganextremelyfastandrobustbodydiode.Thiscombination
ofextremelylowswitching,commutationandconductionlossestogether
withhighestrobustnessmakeespeciallyresonantswitchingapplications
morereliable,moreefficient,lighterandcooler.
ThinPAK
ThinPAKisaanewleadlessSMDpackageforHVMOSFETs.Thenew
packagehasaverysmallfootprintofonly64mm²(vs.150mm²forthe
D²PAK)andaverylowprofilewithonly1mmheight(vs.4.4mmforthe
D²PAK).Thesignificantlysmallerpackagesize,combinedwithbenchmark
lowparasiticinductances,providesdesignerswithanewandeffectiveway
todecreasesystemsolutionsizeinpower-densitydrivendesigns.
Drain
Pin 5
Gate
Pin 1
Driver
Source
Pin 2
Features
Power
Source
Pin 3,4
•Reducedboardspaceconsumption
•Increasedpowerdensity
•Shortcommutationloop
•Smoothswitchingwaveform
•easytouseproducts
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Pb-freeplating,Halogenfree
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCDTV,Lighting,Server,Telecom.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj max
700
V
RDS(on),max
0.66
Ω
Qg,typ
23
nC
ID,pulse
16
A
Eoss @ 400V
1.9
µJ
Body diode di/dt
500
A/µs
Type/OrderingCode
Package
Marking
IPL65R660E6
PG-VSON-4
65E6660
Final Data Sheet
2
RelatedLinks
see Appendix A
Rev.2.1,2014-03-07
650VCoolMOS™E6PowerTransistor
IPL65R660E6
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Final Data Sheet
3
Rev.2.1,2014-03-07
650VCoolMOS™E6PowerTransistor
IPL65R660E6
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current 1)
ID
Values
Min.
Typ.
Max.
7.0
Unit
Note/TestCondition
A
TC=25°C
TC=100°C
4.4
ID‚pulse
16
A
TC=25°C
Avalanche energy, single pulse
EAS
142
mJ
ID=1.3A,VDD=50V
(see table 10)
Avalanche energy, repetitive
EAR
0.21
mJ
ID=1.3A,VDD=50V
Avalanche current, repetitive
IAR
1.3
A
MOSFET dv/dt ruggedness
dv/dt
50
V/ns
VDS=0...480V
Gate source voltage
VGS
-20
20
V
static
-30
30
-40
150
°C
Pulsed drain current
2)
AC (f > 1 Hz)
Operating and storage temperature
Tj‚Tstg
Continuous diode forward current
IS
6.0
A
TC=25°C
Diode pulse current
IS‚pulse
16
A
TC=25°C
dv/dt
15
V/ns
Maximum diode commutation speed
dif/dt
500
Power dissipation
Ptot
63
Reverse diode dv/dt
3)
VDS=0...400V,ISD≤ID,
Tj=25°C
A/µs
(see table 8)
W
TC=25°C
1)
Limited by Tj max. Maximum duty cycle D=0,75
Pulse width tp limited by Tj max
3)
Identical low side and high side switch with identical RG
2)
Final Data Sheet
4
Rev.2.1,2014-03-07
650VCoolMOS™E6PowerTransistor
IPL65R660E6
3Thermalcharacteristics
Table3ThermalcharacteristicsThinPAK8x8
Parameter
Symbol
Thermal resistance, junction - case
RthJC
Values
Min.
Thermal resistance, junction - ambient 1) RthJA
Typ.
Max.
Unit
2
°C/W
65
°C/W
Tsold
260
SMD version, device on PCB,
minimal footprint
SMD version, device on PCB, 6cm²
cooling area
45
Soldering temperature, wave- &
reflowsoldering allowed
Note/TestCondition
°C
reflow MSL 3
1)
Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection.
PCB is vertical without air stream cooling.
Final Data Sheet
5
Rev.2.1,2014-03-07
650VCoolMOS™E6PowerTransistor
IPL65R660E6
4Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Parameter
Symbol
Drain-source breakdown voltage
V(BR)DSS
650
Gate threshold voltage
VGS(th)
2.5
Zero gate voltage drain current
IDSS
Min.
Typ.
3
Unit
Note/TestCondition
V
VGS=0V,ID=1mA
3.5
V
VDS=VGS,ID=0.2mA
1
µA
VDS=650V,VGS=0V,Tj=25°C
Max.
VDS=650V,VGS=0V,Tj=150°C
10
Gate-source leakage current
IGSS
Drain-source on-state resistance
RDS(on)
0.594
100
nA
VGS=20V,VDS=0V
0.66
Ω
VGS=10V,ID=2.1A,Tj=25°C
VGS=10V,ID=2.1A,Tj=150°C
1.544
Gate resistance
RG
5
Ω
f=1MHz,opendrain
Unit
Note/TestCondition
VGS=0V,VDS=100V,f=1MHz
Table5Dynamiccharacteristics
Values
Parameter
Symbol
Input capacitance
Ciss
440
pF
Output capacitance
Coss
30
pF
Effective output capacitance, energy
related 1)
Co(er)
21
pF
VGS=0V,VDS=0...480V
Effective output capacitance, time
related 2)
Co(tr)
88
pF
ID=constant,VGS=0V,
VDS=0...480V
Turn-on delay time
td(on)
10
ns
Rise time
tr
8
ns
Turn-off delay time
td(off)
64
ns
Fall time
tf
11
ns
Min.
Typ.
Max.
VDD=400V,VGS=13V,ID=3.2A,
RG=6.8Ω
(see table 9)
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Qgs
Gate to drain charge
Values
Unit
Note/TestCondition
2.75
nC
Qgd
12
nC
VDD=480V,ID=3.2A,
VGS=0to10V
Gate charge total
Qg
23
nC
Gate plateau voltage
Vplateau
5.5
V
1)
2)
Min.
Typ.
Max.
Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS
Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS
Final Data Sheet
6
Rev.2.1,2014-03-07
650VCoolMOS™E6PowerTransistor
IPL65R660E6
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
VSD
Reverse recovery time
Values
Unit
Note/TestCondition
0.9
V
VGS=0V,IF=3.2A,Tj=25°C
trr
270
ns
Reverse recovery charge
Qrr
2
µC
VR=400V,IF=3.2A,
diF/dt=100A/µs
(see table 8)
Peak reverse recovery current
Irrm
13
A
Final Data Sheet
Min.
7
Typ.
Max.
Rev.2.1,2014-03-07
650VCoolMOS™E6PowerTransistor
IPL65R660E6
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Safeoperatingarea
102
70
1 µs
60
10
1
10 µs
100 µs
100
40
1 ms
ID[A]
Ptot[W]
50
30
10 ms
10-1
20
DC
10-2
10
0
0
25
50
75
100
125
10-3
150
100
101
TC[°C]
102
103
VDS[V]
Ptot=f(TC)
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
2
101
10
1 µs
101
10 µs
100
100
ID[A]
1 ms
10 ms
10-1
0.1
0.05
0.02
10-1
10-3
100
101
102
0.01
single pulse
DC
10-2
0.5
0.2
ZthJC[K/W]
100 µs
103
10-2
10-5
10-4
VDS[V]
10-2
10-1
tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tP);parameter:D=tp/T
8
Rev.2.1,2014-03-07
650VCoolMOS™E6PowerTransistor
IPL65R660E6
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.outputcharacteristics
20
12
20 V
20 V
10 V
15
10 V
8V
9
8V
ID[A]
ID[A]
7V
7V
10
6
6V
5.5 V
6V
5
3
5V
5.5 V
4.5 V
5V
4.5 V
0
0
5
10
15
0
20
0
5
10
VDS[V]
15
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
Diagram8:Drain-sourceon-stateresistance
1.70
1.50
1.30
10 V
1.10
5.5 V
6V
6.5 V
20 V
7V
RDS(on)[Ω]
RDS(on)[Ω]
ID=f(VDS);Tj=25°C;parameter:VGS
3.0
2.9
2.8
2.7
2.6
2.5
2.4
2.3
2.2
2.1
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
20
VDS[V]
0.90
typ
98%
0.70
0.50
0.30
0
5
10
15
0.10
-50
-25
0
25
ID[A]
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Final Data Sheet
50
75
100
125
150
Tj[°C]
RDS(on)=f(Tj);ID=2.1A;VGS=10V
9
Rev.2.1,2014-03-07
650VCoolMOS™E6PowerTransistor
IPL65R660E6
Diagram9:Typ.transfercharacteristics
Diagram10:Typ.gatecharge
18
10
16
9
25 °C
8
14
480 V
120 V
7
12
8
VGS[V]
ID[A]
6
10
150 °C
4
6
3
4
2
2
0
5
1
0
2
4
6
8
10
0
12
0
5
VGS[V]
10
15
20
25
125
150
Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj
VGS=f(Qgate);ID=3.2Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
Diagram12:Avalancheenergy
2
10
150
125
101
IF[A]
125 °C
EAS[mJ]
100
25 °C
100
75
50
25
10-1
0.0
0.5
1.0
1.5
2.0
0
25
50
VSD[V]
100
Tj[°C]
IF=f(VSD);parameter:Tj
Final Data Sheet
75
EAS=f(Tj);ID=1.2A;VDD=50V
10
Rev.2.1,2014-03-07
650VCoolMOS™E6PowerTransistor
IPL65R660E6
Diagram13:Drain-sourcebreakdownvoltage
Diagram14:Typ.capacitances
104
760
740
720
103
Ciss
680
C[pF]
VBR(DSS)[V]
700
660
102
Coss
640
101
620
Crss
600
580
-60
-20
20
60
100
140
180
100
0
100
Tj[°C]
200
300
400
500
VDS[V]
VBR(DSS)=f(Tj);ID=1mA
C=f(VDS);VGS=0V;f=1MHz
Diagram15:Typ.Cossstoredenergy
3
Eoss[µJ]
2
1
0
0
100
200
300
400
500
VDS[V]
Eoss=f(VDS)
Final Data Sheet
11
Rev.2.1,2014-03-07
650VCoolMOS™E6PowerTransistor
IPL65R660E6
6TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V ,I
Rg1
VDS( peak)
VDS
VDS
VDS
trr
IF
Rg 2
tF
tS
dIF / dt
QF
IF
t
dIrr / dt trr =tF +tS
Qrr = QF + QS
Irrm
Rg1 = Rg 2
IF
10 %Irrm
QS
Table9Switchingtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
VDS
VGS
VGS
10%
td(on)
td(off)
tr
ton
tf
toff
Table10Unclampedinductiveload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VD
VDS
VDS
Final Data Sheet
12
ID
VDS
Rev.2.1,2014-03-07
650VCoolMOS™E6PowerTransistor
IPL65R660E6
7PackageOutlines
Figure1OutlinePG-VSON-4,dimensionsinmm/inches
Final Data Sheet
13
Rev.2.1,2014-03-07
650VCoolMOS™E6PowerTransistor
IPL65R660E6
8AppendixA
Table11RelatedLinks
• IFXCoolMOSWebpage:www.infineon.com
• IFXDesignTools:www.infineon.com
Final Data Sheet
14
Rev.2.1,2014-03-07
650VCoolMOS™E6PowerTransistor
IPL65R660E6
RevisionHistory
IPL65R660E6
Revision:2014-03-07,Rev.2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2013-08-26
Release of final version
2.1
2014-03-07
Added in Features list: Qualified for industrial grade application
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Publishedby
InfineonTechnologiesAG
81726München,Germany
©2014InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
15
Rev.2.1,2014-03-07