MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™C6650V 650VCoolMOS™C6PowerTransistor IPD65R1K4C6 DataSheet Rev.2.0 Final Industrial&Multimarket 650VCoolMOS™C6PowerTransistor IPD65R1K4C6 1Description DPAK CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. TheresultingdevicesprovideallbenefitsofafastswitchingSJMOSFET whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler. tab 1 2 3 Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) Drain Pin 2 Gate Pin 1 Source Pin 3 Applications HardswitchingPWMstagesandresonantswitchingPWMstagesfore.g. PCSilverbox,Adapter,LCD&PDPTVandLighting. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj max 700 V RDS(on),max 1.4 Ω Qg,typ 10.5 nC ID,pulse 8.3 A Eoss @ 400V 1.15 µJ Body diode di/dt 500 A/µs Type/OrderingCode Package Marking IPD65R1K4C6 PG-TO 252 65C61K4 Final Data Sheet 2 RelatedLinks see Appendix A Rev.2.0,2013-07-26 650VCoolMOS™C6PowerTransistor IPD65R1K4C6 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Final Data Sheet 3 Rev.2.0,2013-07-26 650VCoolMOS™C6PowerTransistor IPD65R1K4C6 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current 1) ID Values Min. Typ. Max. 3.2 Unit Note/TestCondition A TC=25°C TC=100°C 2.0 ID‚pulse 8.3 A TC=25°C Avalanche energy, single pulse EAS 26 mJ ID=0.6A,VDD=50V (see table 10) Avalanche energy, repetitive EAR 0.10 mJ ID=0.6A,VDD=50V Avalanche current, repetitive IAR 0.6 A MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS=0...480V Gate source voltage VGS -20 20 V static -30 30 -55 150 °C Pulsed drain current 2) AC (f > 1 Hz) Operating and storage temperature Tj‚Tstg Continuous diode forward current IS 2.8 A TC=25°C Diode pulse current IS‚pulse 8.3 A TC=25°C Reverse diode dv/dt 3) dv/dt 15 V/ns Maximum diode commutation speed dif/dt 500 A/µs VDS=0...400V,ISD≤ID, Tj=25°C (see table 8) Power dissipation Ptot 28 W TC=25°C 1) Limited by Tj max. Maximum duty cycle D=0.75 Pulse width tp limited by Tj max 3) Identical low side and high side switch with identical RG 2) Final Data Sheet 4 Rev.2.0,2013-07-26 650VCoolMOS™C6PowerTransistor IPD65R1K4C6 3Thermalcharacteristics Table3ThermalcharacteristicsDPAK Parameter Symbol Thermal resistance, junction - case Thermal resistance, junction - ambient 1) Values Min. Typ. Max. Unit RthJC 4.4 °C/W RthJA 62 °C/W leaded SMD version, device on PCB, 6cm² cooling area 35 Soldering temperature, wave- & reflowsoldering allowed Note/TestCondition Tsold 260 °C 1.6 mm (0.063 in.) from case for 10s 1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection. PCB is vertical without air stream cooling. Final Data Sheet 5 Rev.2.0,2013-07-26 650VCoolMOS™C6PowerTransistor IPD65R1K4C6 4Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Parameter Symbol Drain-source breakdown voltage V(BR)DSS 650 Gate threshold voltage VGS(th) 2.5 Zero gate voltage drain current IDSS Min. Typ. 3 Unit Note/TestCondition V VGS=0V,ID=1mA 3.5 V VDS=VGS,ID=0.1mA 1 µA VDS=650V,VGS=0V,Tj=25°C Max. VDS=650V,VGS=0V,Tj=150°C 10 Gate-source leakage current IGSS Drain-source on-state resistance RDS(on) 1.260 100 nA VGS=20V,VDS=0V 1.4 Ω VGS=10V,ID=1.0A,Tj=25°C VGS=10V,ID=1A,Tj=150°C 3.280 Gate resistance RG 6.5 Ω f=1MHz,opendrain Unit Note/TestCondition VGS=0V,VDS=100V,f=1MHz Table5Dynamiccharacteristics Values Parameter Symbol Input capacitance Ciss 225 pF Output capacitance Coss 18 pF Effective output capacitance, energy related 1) Co(er) 10 pF VGS=0V,VDS=0...480V Effective output capacitance, time related Co(tr) 42 pF ID=constant,VGS=0V, VDS=0...480V Turn-on delay time td(on) 7.7 ns Rise time tr 5.9 ns Turn-off delay time td(off) 33 ns Fall time tf 18.2 ns 2) Min. Typ. Max. VDD=400V,VGS=13V,ID=1.5A, RG=10.2Ω (see table 9) Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Qgs Gate to drain charge Values Unit Note/TestCondition 1.3 nC Qgd 5.8 nC VDD=480V,ID=1.5A, VGS=0to10V Gate charge total Qg 10.5 nC Gate plateau voltage Vplateau 5.4 V 1) 2) Min. Typ. Max. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS Final Data Sheet 6 Rev.2.0,2013-07-26 650VCoolMOS™C6PowerTransistor IPD65R1K4C6 Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage VSD Reverse recovery time Values Unit Note/TestCondition 0.9 V VGS=0V,IF=1.5A,Tj=25°C trr 200 ns Reverse recovery charge Qrr 0.9 µC VR=400V,IF=1.5A, diF/dt=100A/µs (see table 8) Peak reverse recovery current Irrm 8 A Final Data Sheet Min. 7 Typ. Max. Rev.2.0,2013-07-26 650VCoolMOS™C6PowerTransistor IPD65R1K4C6 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Max.transientthermalimpedance 101 30 25 0.5 100 20 0.2 ZthJC[K/W] Ptot[W] 0.1 15 0.05 0.02 0.01 single pulse 10-1 10 5 0 0 40 80 120 10-2 160 10-5 10-4 10-3 TC[°C] 10-2 Ptot=f(TC) ZthJC=f(tP);parameter:D=tp/T Diagram3:Safeoperatingarea Diagram4:Safeoperatingarea 2 102 10 1 µs 101 101 1 µs 10 µs 10 µs 100 µs 100 ID[A] ID[A] 10-1 tp[s] 100 100 µs 1 ms 1 ms 10 ms 10-1 10 ms 10-1 DC DC 10-2 100 101 102 103 VDS[V] 100 101 102 103 VDS[V] ID=f(VDS);VGS>7V;TC=25°C;D=0;parameter:tp Final Data Sheet 10-2 ID=f(VDS);VGS>7V;TC=80°C;D=0;parameter:tp 8 Rev.2.0,2013-07-26 650VCoolMOS™C6PowerTransistor IPD65R1K4C6 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 12 7 20 V 6 20 V 10 10 V 10 V 8V 5 8 8V 7V 6 ID[A] ID[A] 4 7V 3 6V 4 5V 5.5 V 2 1 5V 4.5 V 0 0 5 10 15 5.5 V 2 6V 0 20 4.5 V 0 5 10 VDS[V] 15 20 VDS[V] ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 8 4 7 3 5 5 V 5.5V 6V 6.5 V RDS(on)[Ω] RDS(on)[Ω] 6 7V 10 V 4 3 2 typ 98% 1 2 1 0 1 2 3 4 5 6 0 -60 -20 20 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=1.0A;VGS=10V 9 Rev.2.0,2013-07-26 650VCoolMOS™C6PowerTransistor IPD65R1K4C6 Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 10 10 9 25 °C 8 8 120 V 7 VGS[V] 6 ID[A] 6 480 V 150 °C 4 5 4 3 2 2 1 0 0 2 4 6 8 0 10 0 5 VGS[V] 10 15 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=1.5Apulsed;parameter:VDD Diagram11:Avalancheenergy Diagram12:Drain-sourcebreakdownvoltage 30 750 725 25 700 20 VBR(DSS)[V] EAS[mJ] 675 15 650 625 10 600 5 575 0 0 50 100 150 200 550 -60 -20 Tj[°C] 60 100 140 180 Tj[°C] EAS=f(Tj);ID=0.6A;VDD=50V Final Data Sheet 20 VBR(DSS)=f(Tj);ID=1.0mA 10 Rev.2.0,2013-07-26 650VCoolMOS™C6PowerTransistor IPD65R1K4C6 Diagram13:Typ.capacitances Diagram14:Typ.Cossstoredenergy 104 2.00 1.80 1.60 103 1.40 1.20 Eoss[µJ] C[pF] Ciss 102 1.00 0.80 Coss 0.60 101 0.40 0.20 Crss 100 0 100 200 300 400 500 600 0.00 0 VDS[V] 100 200 300 400 500 600 VDS[V] C=f(VDS);VGS=0V;f=1MHz Eoss=f(VDS) Diagram15:Forwardcharacteristicsofreversediode IF[A] 101 125 °C 25 °C 100 10-1 0.0 0.5 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj Final Data Sheet 11 Rev.2.0,2013-07-26 650VCoolMOS™C6PowerTransistor IPD65R1K4C6 6TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform V ,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tF tS dIF / dt QF IF t dIrr / dt trr =tF +tS Qrr = QF + QS Irrm Rg1 = Rg 2 IF 10 %Irrm QS Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) td(off) tr ton tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VD VDS VDS Final Data Sheet 12 ID VDS Rev.2.0,2013-07-26 650VCoolMOS™C6PowerTransistor IPD65R1K4C6 7PackageOutlines Figure1OutlinePG-TO252,dimensionsinmm/inches Final Data Sheet 13 Rev.2.0,2013-07-26 650VCoolMOS™C6PowerTransistor IPD65R1K4C6 8AppendixA Table11RelatedLinks • IFXC6ProductBrief:www.infineon.com • IFXC6Portfolio:www.infineon.com • IFXCoolMOSWebpage:www.infineon.com • IFXDesignTools:www.infineon.com Final Data Sheet 14 Rev.2.0,2013-07-26 650VCoolMOS™C6PowerTransistor IPD65R1K4C6 RevisionHistory IPD65R1K4C6 Revision:2013-07-26,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2013-07-26 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Edition2011-08-01 Publishedby InfineonTechnologiesAG 81726München,Germany ©2011InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 15 Rev.2.0,2013-07-26