IDV15E65D2 Data Sheet (1.7 MB, EN)

Diode
RapidSwitchingEmitterControlledDiode
IDV15E65D2
FullPAKwithEmitterControlledDiode
Datasheet
IndustrialPowerControl
IDV15E65D2
EmitterControlledDiode
RapidSwitchingEmitterControlledDiode
Features:
A
•ElectricallyisolatedFullPAKforefficientassembly
•650VEmitterControlledtechnology
•Fastrecovery
•Softswitching
•Lowreverserecoverycharge
•Lowforwardvoltage
•QualifiedaccordingtoJESD-022fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogenfree(accordingtoIEC61249-2-21)
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/diode/
C
Applications:
•BoostdiodeinCCMPFC
C
A
KeyPerformanceandPackageParameters
Type
IDV15E65D2
Vrrm
If
Vf,Tvj=25°C
Tvjmax
Marking
Package
650V
15A
1.6V
175°C
E15ED2
PG-TO220-2-22 FP
2
Rev.2.2,2014-08-26
IDV15E65D2
EmitterControlledDiode
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
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Rev.2.2,2014-08-26
IDV15E65D2
EmitterControlledDiode
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Symbol
Value
Unit
Repetitive peak reverse voltage
VRRM
650
V
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IF
15.0
7.5
A
Diodepulsedcurrent,tplimitedbyTvjmax
IFpuls
45.0
A
Diode surge non repetitive forward current
TC=25°C,tp=8.3ms,sinehalfwave
IFSM
PowerdissipationTC=25°C
Ptot
34.0
W
Operating junction temperature
Tvj
-40...+175
°C
Storage temperature
Tstg
-55...+150
°C
A
100.0
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
°C
260
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
ThermalResistance
Parameter
Characteristic
Symbol Conditions
Max.Value
Unit
Diode thermal resistance,1)
junction - case
Rth(j-c)
4.40
K/W
Thermal resistance
junction - ambient
Rth(j-a)
65
K/W
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
min.
typ.
max.
2.20
-
Unit
StaticCharacteristic
Diode forward voltage
VF
IF=15.0A
Tvj=25°C
Tvj=175°C
-
1.60
1.65
Reverse leakage current
IR
VR=650V
Tvj=25°C
Tvj=175°C
-
-
V
40.0 µA
4000.0
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
min.
typ.
max.
-
7.0
-
Unit
DynamicCharacteristic
Internal emitter inductance
measured 5mm (0.197 in.) from
case
1)
LE
nH
Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached.
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Rev.2.2,2014-08-26
IDV15E65D2
EmitterControlledDiode
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
Tvj=25°C,
VR=400V,
IF=15.0A,
diF/dt=1000A/µs,
Lσ=35nH,
Cσ=32pF,
switch IPW60R045CP
-
30
-
ns
-
0.20
-
µC
-
12.8
-
A
-
-6500
-
A/µs
Tvj=25°C,
VR=400V,
IF=15.0A,
diF/dt=200A/µs,
Lσ=35nH,
Cσ=32pF,
switch IPW60R045CP
-
47
-
ns
-
0.12
-
µC
-
3.3
-
A
-
-1500
-
A/µs
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
Tvj=175°C,
VR=400V,
IF=15.0A,
diF/dt=1000A/µs,
Lσ=35nH,
Cσ=32pF,
switch IPW60R045CP
-
30
-
ns
-
0.37
-
µC
-
16.9
-
A
-
-6800
-
A/µs
Tvj=125°C,
VR=400V,
IF=15.0A,
diF/dt=200A/µs,
Lσ=35nH,
Cσ=32pF,
switch IPW60R045CP
-
51
-
ns
-
0.21
-
µC
-
5.0
-
A
-
-1900
-
A/µs
DiodeCharacteristic,atTvj=175°C/125°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
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Rev.2.2,2014-08-26
IDV15E65D2
EmitterControlledDiode
Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W]
35
Ptot,POWERDISSIPATION[W]
30
25
20
15
10
5
1
D=0.5
0.2
0.1
0.05
0.02
0.01
0.1
single pulse
i:
1
2
3
4
5
6
7
8
ri[K/W]: 5.9E-3 0.080756 0.58656 0.66911 0.47203
0.8892
1.5834
0.129922
τi[s]:
3.3E-6 3.7E-5
3.2E-4
2.6E-3
0.02371043 0.3547224 2.437827 28.28102
0
25
50
75
100
125
150
0.01
1E-7 1E-6 1E-5 1E-4 0.001 0.01
175
TC,CASETEMPERATURE[°C]
0.1
1
10
tp,PULSEWIDTH[s]
Figure 1. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
Figure 2. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
80
0.5
Tj=25°C, IF = 15A
Tj=175°C, IF = 15A
Tj=25°C, IF = 15A
Tj=175°C, IF = 15A
Qrr,REVERSERECOVERYCHARGE[µC]
trr,REVERSERECOVERYTIME[ns]
70
60
50
40
30
20
0.4
0.3
0.2
0.1
10
0
0
1000
2000
3000
4000
5000
0.0
6000
diF/dt,DIODECURRENTSLOPE[A/µs]
0
1000
2000
3000
4000
5000
6000
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 3. Typicalreverserecoverytimeasafunctionof Figure 4. Typicalreverserecoverychargeasafunction
diodecurrentslope
ofdiodecurrentslope
(VR=400V)
(VR=400V)
6
Rev.2.2,2014-08-26
IDV15E65D2
EmitterControlledDiode
40
0
Tj=25°C, IF = 15A
Tj=175°C, IF = 15A
Tj=25°C, IF = 15A
Tj=175°C, IF = 15A
-2000
dIrr/dt,diodepeakrateoffallofIrr[A/µs]
Irrm,REVERSERECOVERYCURRENT[A]
35
30
-4000
25
-6000
20
-8000
15
-10000
10
-12000
5
0
0
1000
2000
3000
4000
5000
-14000
6000
0
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 5. Typicalpeakreverserecoverycurrentasa
functionofdiodecurrentslope
(VR=400V)
3000
4000
5000
6000
2.50
Tj=25°C
Tj=175°C
40
IF=7,5A
IF=15A
IF=30A
2.25
VF,FORWARDVOLTAGE[V]
35
IF,FORWARDCURRENT[A]
2000
Figure 6. Typicaldiodepeakrateoffallofreverse
recoverycurrentasafunctionofdiode
currentslope
(VR=400V)
45
30
25
20
15
10
2.00
1.75
1.50
1.25
1.00
0.75
5
0
1000
diF/dt,DIODECURRENTSLOPE[A/µs]
0.0
0.5
1.0
1.5
2.0
0.50
2.5
VF,FORWARDVOLTAGE[V]
0
25
50
75
100
125
150
175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 7. Typicaldiodeforwardcurrentasafunctionof Figure 8. Typicaldiodeforwardvoltageasafunctionof
forwardvoltage
junctiontemperature
7
Rev.2.2,2014-08-26
IDV15E65D2
EmitterControlledDiode
8
Rev.2.2,2014-08-26
IDV15E65D2
EmitterControlledDiode
vGE(t)
90% VGE
a
a
10% VGE
b
b
t
iC(t)
90% IC
90% IC
10% IC
10% IC
t
vCE(t)
t
td(off)
tf
td(on)
t
tr
vGE(t)
90% VGE
10% VGE
t
iC(t)
CC
2% IC
t
vCE(t)
t2
E =
off
∫V
t
CE
t4
x IC x d t
E
1
t1
on
=
∫V
t
CE x IC x d t
2% VCE
3
t2
t3
t4
9
t
Rev.2.2,2014-08-26
IDV15E65D2
Emitter Controlled Diode
Revision History
IDV15E65D2
Revision: 2014-08-26, Rev. 2.2
Previous Revision
Revision
Date
Subjects (major changes since last revision)
1.1
2013-03-13
Preliminary data sheet
2.1
2013-12-16
Final DS / New Marking Pattern
2.2
2014-08-26
VFmax limit reduced according BE test and Qrr at 25°C corrected
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Published by
Infineon Technologies AG
81726 Munich, Germany
81726 München, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support,
automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
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Rev. 2.2, 2014-08-26