IDW80C65D2 Data Sheet (1.5 MB, EN)

Diode
RapidSwitchingEmitterControlledDiode
IDW80C65D2
EmitterControlledDiodeRapid2CommonCathodeSeries
Datasheet
IndustrialPowerControl
IDW80C65D2
EmitterControlledDiodeRapid2CommonCathodeSeries
RapidSwitchingEmitterControlledDiode
Features:
A1 C1 C2 A2
A2
A1
•QualifiedaccordingtoJEDECfortargetapplications
•650VEmitterControlledtechnology
•Fastrecovery
•Softswitching
•Lowreverserecoverycharge(Qrr)
•Lowforwardvoltage(VF)andstableovertemperature
•175°Cjunctionoperatingtemperature
•Easyparalleling
•Pb-freeleadplating
•RoHScompliant
C
Applications:
•BoostdiodeinCCMPFC
Packagepindefinition:
•Pin1-anode(A1)
•Pin2andbackside-cathode(C)
•Pin3-anode(A2)
1
2
3
Key Performance and Package Parameters
Type
IDW80C65D2
Vrrm
If
Vf, Tvj=25°C
Tvjmax
Marking
Package
650V
2x 40A
1.6V
175°C
C80ED2
PG-TO247-3
2
Rev.2.1,2014-12-09
IDW80C65D2
EmitterControlledDiodeRapid2CommonCathodeSeries
Table of Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings (per leg) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistances (per leg) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3
Rev.2.1,2014-12-09
IDW80C65D2
EmitterControlledDiodeRapid2CommonCathodeSeries
Maximum Ratings (per leg)
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet.
Parameter
Symbol
Value
Unit
Repetitivepeakreversevoltage,Tvj≥25°C
VRRM
650
V
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IF
80.0
40.0
A
Diodepulsedcurrent,tplimitedbyTvjmax
IFpuls
120.0
A
Diode surge non repetitive forward current
TC=25°C,tp=8.3ms,sinehalfwave
IFSM
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Ptot
180.0
90.0
W
Operating junction temperature
Tvj
-40...+175
°C
Storage temperature
Tstg
-55...+150
°C
A
250.0
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
Thermal Resistances (per leg)
Parameter
Characteristic
Symbol Conditions
Max. Value
Unit
Diode thermal resistance,1)
junction - case
Rth(j-c)
0.84
K/W
Thermal resistance
junction - ambient
Rth(j-a)
40
K/W
Electrical Characteristics (per leg), at Tvj = 25°C, unless otherwise specified
Parameter
Symbol Conditions
Value
min.
typ.
max.
-
1.60
1.65
1.65
2.20
-
-
Unit
Static Characteristic
Diode forward voltage
VF
IF=40.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
Reverse leakage current2)
IR
VR=650V
Tvj=25°C
Tvj=175°C
40.0
1600.0
-
V
µA
Electrical Characteristic, at Tvj = 25°C, unless otherwise specified
Parameter
Symbol Conditions
Value
min.
typ.
max.
-
13.0
-
Unit
Dynamic Characteristic
Internal emitter inductance
measured 5mm (0.197 in.) from
case
1)
2)
LE
nH
Pleasebeawarethatinnonstandardloadconditions,duetohighRth(j-c),TvjclosetoTvjmaxcanbereached.
Reverse leakage current per leg specified for operating conditions with zero voltage applied to the other leg.
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IDW80C65D2
EmitterControlledDiodeRapid2CommonCathodeSeries
Switching Characteristics (per leg), Inductive Load
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
Tvj=25°C,
VR=400V,
IF=40.0A,
diF/dt=1000A/µs,
Lσ=30nH,
Cσ=40pF,
switch IPW60R045CP.
-
36
-
ns
-
0.40
-
µC
-
22.0
-
A
-
-10000
-
A/µs
Tvj=25°C,
VR=400V,
IF=40.0A,
diF/dt=200A/µs,
Lσ=30nH,
Cσ=40pF,
switch IPW60R045CP.
-
68
-
ns
-
0.18
-
µC
-
3.6
-
A
-
-660
-
A/µs
Diode Characteristic, at Tvj = 25°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Switching Characteristics (per leg), Inductive Load
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
Tvj=175°C,
VR=400V,
IF=40.0A,
diF/dt=1000A/µs,
Lσ=30nH,
Cσ=40pF,
switch IPW60R045CP.
-
60
-
ns
-
1.11
-
µC
-
32.0
-
A
-
-8700
-
A/µs
Tvj=125°C,
VR=400V,
IF=40.0A,
diF/dt=200A/µs,
Lσ=30nH,
Cσ=40pF,
switch IPW60R045CP.
-
82
-
ns
-
0.44
-
µC
-
7.0
-
A
-
-1350
-
A/µs
Diode Characteristic, at Tvj = 175°C/125°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
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Rev.2.1,2014-12-09
IDW80C65D2
EmitterControlledDiodeRapid2CommonCathodeSeries
180
1
Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]
160
Ptot,POWERDISSIPATION[W]
140
120
100
80
60
40
20
0
25
50
75
100
125
150
D = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
single pulse
i:
1
2
3
4
5
6
ri[K/W]: 0.015899 0.19942 0.23881 0.34593 0.036218 2.8E-3
τi[s]:
1.4E-5
2.4E-4
1.8E-3
7.8E-3
0.129099 2.085894
0.01
1E-6
175
1E-5
TC,CASETEMPERATURE[°C]
Figure 1. Power dissipation per leg as a function of
case temperature
(Tvj≤175°C)
0.001
0.01
0.1
Figure 2. Diode transient thermal impedance per leg as
a function of pulse width
(D=tp/T)
110
1.50
Tvj=25°C,IF=40A
Tvj=175°C,IF=40A
Tvj=25°C,IF=40A
Tvj=175°C,IF=40A
Qrr,REVERSERECOVERYCHARGE[µC]
100
90
trr,REVERSERECOVERYTIME[ns]
1E-4
tp,PULSEWIDTH[s]
80
70
60
50
40
30
20
1.25
1.00
0.75
0.50
0.25
10
0
0
250
500
750
0.00
1000 1250 1500 1750 2000
dIF/dt,DIODECURRENTSLOPE[A/µs]
0
250
500
750
1000 1250 1500 1750 2000
dIF/dt,DIODECURRENTSLOPE[A/µs]
Figure 3. Typical reverse recovery time per leg as a
function of diode current slope
(VR=400V)
Figure 4. Typical reverse recovery charge per leg as a
function of diode current slope
(VR=400V)
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Rev.2.1,2014-12-09
IDW80C65D2
EmitterControlledDiodeRapid2CommonCathodeSeries
45
0
Tvj=25°C,IF=40A
Tvj=175°C,IF=40A
dIrr/dt,DIODEPEAKRATEOFFALLOFIrr[A/ns]
Irrm,REVERSERECOVERYCURRENT[A]
40
Tvj=25°C,IF=40A
Tvj=175°C,IF=40A
35
30
25
20
15
10
5
0
0
250
500
750
-2
-4
-6
-8
-10
-12
-14
1000 1250 1500 1750 2000
0
dIF/dt,DIODECURRENTSLOPE[A/µs]
250
500
750
1000 1250 1500 1750 2000
dIF/dt,DIODECURRENTSLOPE[A/µs]
Figure 5. Typical peak reverse recovery current per leg Figure 6. Typical diode peak rate of fall of rev. rec.
as a function of diode current slope
current per leg as a function of diode current
(VR=400V)
slope
(VR=400V)
45
2.50
Tvj=25°C
Tvj=175°C
40
2.25
VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]
35
30
25
20
15
10
2.00
1.75
1.50
1.25
1.00
0.75
5
0
IF=20A
IF=40A
IF=80A
0.0
0.5
1.0
1.5
2.0
0.50
2.5
VF,FORWARDVOLTAGE[V]
25
50
75
100
125
150
175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 7. Typical diode forward current per leg as a
function of forward voltage
Figure 8. Typical diode forward voltage per leg as a
function of junction temperature
7
Rev.2.1,2014-12-09
IDW80C65D2
EmitterControlledDiodeRapid2CommonCathodeSeries
PG-TO247-3
8
Rev.2.1,2014-12-09
IDW80C65D2
EmitterControlledDiodeRapid2CommonCathodeSeries
VGE(t)
I,V
90% VGE
t rr = t a + t b
Q rr = Q a + Q b
dIF/dt
a
10% VGE
b
t
Qa
IC(t)
Qb
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
td(off)
tf
td(on)
t
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
Figure E. Dynamic test circuit
Parasitic inductance Ls,
parasitic capacitor Cs,
relief capacitor Cr,
(only for ZVT switching)
VCE(t)
t2
E
off
=
t4
VCE x IC x dt
E
t1
t1
on
=
VCE x IC x d t
2% VCE
t3
t2
t3
t4
t
Figure B.
9
Rev.2.1,2014-12-09
IDW80C65D2
Emitter Controlled Diode Rapid 2 Common Cathode Series
Revision History
IDW80C65D2
Revision: 2014-12-09, Rev. 2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
1.1
2014-12-02
Preliminary data sheet
2.1
2014-12-09
Final data sheet
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Published by
Infineon Technologies AG
81726 Munich, Germany
81726 München, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
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For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
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question, please contact the nearest Infineon Technologies Office.
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10
Rev. 2.1, 2014-12-09