DMC1028UFDB

DMC1028UFDB
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
BVDSS
Q1
N-Channel
12V
Q2
P-Channel
-20V
Features
RDS(ON) max
ID max
TA = +25°C
25mΩ @ VGS = 4.5V
30mΩ @ VGS = 3.3V
32mΩ @ VGS = 2.5V
80mΩ @ VGS = -4.5V
90mΩ @ VGS = -3.3V
100mΩ @ VGS = -2.5V
6.0A
5.5A
5.3A
-3.4A
-3.2A
-3.0A






Low On-Resistance
Low Input Capacitance
Low Profile, 0.6mm Max Height
ESD HBM Protected up to 1.5KV, MM Protected up to 150V.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it


Case: U-DFN2020-6 (Type B)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e4
Terminals Connections: See Diagram Below
Weight: 0.0065 grams (Approximate)
ideal for high-efficiency power management applications.


Applications
Optimized for Point of Load (POL) Synchronous Buck Converter that
steps down from 3.3V to 1V for core voltage supply to ASICs. Target
applications are Ethernet Network Controllers used in:

Routers, Switchers, Network Interface Controllers (NICs)

Digital Subscriber Line (DSL)

Set-Top Boxes (STBs)


D1
D2
U-DFN2020-6 (Type B)
S2
G1
G2
D2
G2
D1
D1
D2
ESD PROTECTED
Gate Protection
Diode
G1
S1
Gate Protection
Diode
S1
Pin1
S2
N-CHANNEL MOSFET
P-CHANNEL MOSFET
Internal Schematic
Bottom View
Ordering Information (Note 4)
Part Number
DMC1028UFDB-7
DMC1028UFDB-13
Notes:
Case
U-DFN2020-6 (Type B)
U-DFN2020-6 (Type B)
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year
Code
Month
Code
2015
C
Jan
1
2016
D
Feb
2
DMC1028UFDB
Document number: DS37634 Rev. 4 - 2
Mar
3
D8 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: C = 2015)
M = Month (ex: 9 = September)
YM
D8
2017
E
Apr
4
May
5
2018
F
Jun
6
1 of 10
www.diodes.com
2019
G
Jul
7
Aug
8
2020
H
Sep
9
Oct
O
2021
I
Nov
N
Dec
D
May 2015
© Diodes Incorporated
DMC1028UFDB
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
t < 5s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
ID
Q1
N-CHANNEL
12
±8
6.0
4.8
Q2
P-CHANNEL
-20
±8
-3.4
-2.7
7.1
5.7
1.4
40
12
8.4
-4.0
-3.2
-1.4
-20
-12
7.5
ID
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current L = 0.1mH
Avalanche Energy L = 0.1mH
IS
IDM
IAS
EAS
Units
V
V
A
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Symbol
Steady State
t < 5s
Steady State
t < 5s
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Note:
Value
1.36
1.89
92
66
19
-55 to +150
PD
RθJA
RθJC
TJ, TSTG
Units
W
°C/W
°C
5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
Electrical Characteristics Q1 N-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
12
-
-
1.0
±10
V
μA
μA
VGS = 0V, ID = 250μA
VDS = 12V, VGS = 0V
VGS = ±8V, VDS = 0V
VGS(TH)
RDS(ON)
17
19
21
30
0.7
1
25
30
32
40
1.2
V
Static Drain-Source On-Resistance
0.4
-
mΩ
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 5.2A
VGS = 3.3V, ID = 5.0A
VGS = 2.5V, ID = 4.8A
VGS = 1.8V, ID = 2.5A
VGS = 0V, IS = 1A
-
787
203
177
4.8
7.9
10.5
18.5
1.2
2.9
4.6
9.4
15.7
3.7
12.0
1.8
-
pF
pF
pF
Ω
nC
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 3.3V)
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
DMC1028UFDB
Document number: DS37634 Rev. 4 - 2
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
2 of 10
www.diodes.com
V
Test Condition
VDS = 6V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 6V, ID = 6.8A
VDD = 6V, VGS = 4.5V,
RL = 1.1Ω, RG = 1Ω
IS = 5.4A, dI/dt = 100A/μs
IS = 5.4A, dI/dt = 100A/μs
May 2015
© Diodes Incorporated
DMC1028UFDB
Electrical Characteristics Q2 P-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-20
-
-
-1.0
±10
V
μA
μA
VGS = 0V, ID = -250μA
VDS = -20V, VGS = 0V
VGS = ±8V, VDS = 0V
VGS(TH)
RDS(ON)
55
63
70
88
110
-0.7
-1
80
90
100
140
210
-1.2
V
Static Drain-Source On-Resistance
-0.4
-
mΩ
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -3.8A
VGS = -3.3V, ID = -3.5A
VGS = -2.5V, ID = -3.3A
VGS = -1.8V, ID = -1.0A
VGS = -1.5V, ID = -0.5A
VGS = 0V, IS = -1A
-
576
87
71
15
5.2
6.7
11.5
1.0
2.0
3.5
3.6
20.8
12.7
13.1
3.9
-
pF
pF
pF
Ω
nC
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -3.3V)
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
V
Test Condition
VDS = -10V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = -10V, ID = -4.9A
VDD = -10V, VGS = -4.5V,
RL = 2.6Ω, RG = 1Ω
IS = -3.9A, dI/dt = 100A/μs
IS = -3.9A, dI/dt = 100A/μs
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMC1028UFDB
Document number: DS37634 Rev. 4 - 2
3 of 10
www.diodes.com
May 2015
© Diodes Incorporated
DMC1028UFDB
Typical Characteristics - N-CHANNEL
15
20.0
18.0
VGS = 4.5V
VDS= 5V
VGS = 1.8V
12
14.0
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
16.0
VGS = 3.5V
12.0
VGS = 3.0V
10.0
VGS = 2.5V
8.0
VGS = 1.5V
VGS = 2.0V
6.0
9
TA = 125oC
TA = -55oC
6
VGS = 1.2V
VGS = 1.1V
2.0
TA = 85oC
0
0.0
0
0.5
1
1.5
2
2.5
0
3
0.5
0.1
0.045
0.09
VGS = 1.8V
0.035
0.03
VGS = 2.5V
0.025
0.02
0.015
VGS = 4.5V
0.01
1.5
2
VGS = 3.3V
3
0.07
0.06
0.05
ID = 2.5A
0.04
0.03
ID = 4.8A
0.02
0.01
0.005
ID = 5.2A
0
0
2.5
0.08
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (Ω)
RD S(ON ), DRAIN-SOURCE ON-RESISTANCE ( )
0.05
0.04
1
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristic
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
0
2
4
6
8
10
12
14
16
18
1
20
TA = 125oC
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
0.03
VGS= 4.5V
TA = 150oC
0.025
0.02
TA = 85oC
TA = 25oC
0.015
TA = -55oC
0.01
0.005
0
2
4
6
8
10
12
14
16
18
Document number: DS37634 Rev. 4 - 2
3
4
5
6
7
8
1.8
1.6
VGS = 4.5V, ID = 10A
1.4
1.2
1
VGS = 1.8V, ID = 3A
0.8
0.6
20
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs Drain Current
and Temperature
DMC1028UFDB
2
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristic
I D, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (Ω)
TA = 25oC
TA = 150oC
3
4.0
4 of 10
www.diodes.com
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (℃)
Figure 6 On-Resistance Variation with
Temperature
May 2015
© Diodes Incorporated
DMC1028UFDB
0.05
1.2
VGS(th), GATE THESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-ESISTANCE (Ω)
Typical Characteristics - N-CHANNEL (continued)
0.045
0.04
VGS = 1.8V, ID = 3A
0.035
0.03
0.025
0.02
0.015
VGS = 4.5V, ID = 10A
0.01
0.005
1.1
1
0.9
0.8
0.6
0.5
-25
0
25
50
75
100
125
ID = 250µA
0.4
0.3
0.2
0.1
0
-50
ID = 1mA
0.7
0
150
-50
TJ, JUNCTION TEMPERATURE (℃)
Figure 7 On-Resistance Variation with Temperature
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 8 Gate Theshold Variation vs Junction
Temperature
10000
20
18
VGS = 0V
CT, JUNCTION CAPACITANCE (pF)
IS, SOURCE CURRENT (A)
-25
16
14
12
TA = 125oC
10
TA = -55oC
8
6
TA = 25oC
TA = 150oC
4
TA = 85oC
2
f=1MHz
Ciss
1000
Coss
Crss
100
0
10
0
0.3
0.6
0.9
1.2
1.5
0
VSD, SOURCE-DRAIN VOLTAGE (V)
2
4
6
8
10
12
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
Figure 9 Diode Forward Voltage vs. Current
8
100
RDS(ON)
Limited
10
ID, DRAIN CURRENT (A)
VGS (V)
6
4
VDS = 6V, ID = 6.8A
2
1
0.1
0
0
2
4
6
8
10 12 14
Qg (nC)
Fiure 11 Gate Charge
DMC1028UFDB
Document number: DS37634 Rev. 4 - 2
16
18
20
0.01
0.01
DC
PW =10s
PW =1s
PW =100ms
TJ(Max)=150℃
TA=25℃
PW =10ms
VGS=4.5V
PW =1ms
Single Pulse
DUT on 1*MRP Board PW =100µs
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
5 of 10
www.diodes.com
May 2015
© Diodes Incorporated
DMC1028UFDB
Typical Characteristics - P-CHANNEL
20.0
10
VGS = -4.5V
18.0
VDS = -5V
8
14.0
VGS = -2.5V
12.0
VGS = -2.0V
10.0
ID, DRAIN CURRENT (A)
16.0
ID, DRAIN CURRENT (A)
VGS = -3.0V
VGS = -3.5V
VGS = -1.8V
8.0
6.0
VGS = -1.5V
TA = 125oC
TA = -55oC
TA = 150oC
TA = 25oC
VGS = -1.2V
TA = 85oC
0
0.0
0
1
2
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 13 Typical Output Characteristic
0
3
0.5
1
1.5
2
2.5
3
VGS, GATE-SOURCE VOLTAGE (V)
Figure 14 Typical Transfer Characteristic
0.3
0.3
VGS = -1.5V
0.25
0.25
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( )
4
2
4.0
2.0
0.2
VGS = -1.8V
0.15
VGS = -2.5V
0.1
ID = -3.8A
0.2
ID = -3.3A
0.15
0.1
ID = -1.0A
0.05
0.05
VGS = -4.5V
VGS = -3.3V
0
0
1
3
5
7
9 11 13 15 17 19
ID, DRAIN-SOURCE CURRENT (A)
Figure 15 Typical On-Resistance vs.
Drain Current and Gate Voltage
VGS= -4.5V
0.1
TA = 150oC
TA = 125oC
0.08
0.06
TA = 85oC
TA = 25oC
0.04
TA = -55oC
0.02
1
3
5
7
9
11
13
15
17
19
0
21
21
2
4
6
1.8
1.6
1.4
VGS = -4.5V, ID = -5.0A
1.2
1
VGS = -1.8V, ID = -1.0A
0.8
0.6
-50
-25
0
25
50
75
100
125
ID, DRAIN CURRENT (A)
TJ, JUNCTION TEMPERATURE (℃)
Figure 17 Typical On-Resistance vs Drain
Current and Temperature
Figure 18 On-Resistance Variation with
Temperature
DMC1028UFDB
Document number: DS37634 Rev. 4 - 2
8
VGS, GATE-SOURCE VOLTAGE (V)
Figure 16 Typical Transfer Characteristic
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
0.12
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (Ω)
6
6 of 10
www.diodes.com
150
May 2015
© Diodes Incorporated
DMC1028UFDB
Typical Characteristics - P-CHANNEL (continued)
1
VGS(th), GATE THESHOLD VOLTAGE (V)
0.14
RDS(ON), DRAIN-SOURCE
ON-ESISTANCE (Ω)
0.12
VGS = -1.8V, ID = -1.0A
0.1
0.08
0.06
0.04
VGS = -4.5V, ID = -5.0A
0.02
0
0.8
ID = -1mA
0.6
0.4
ID = -250µA
0.2
0
-50
-25
0
25
50
75
100 125 150
-50
TJ, JUNCTION TEMPERATURE (℃)
Figure 19 On-Resistance Variation with
Temperature
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (℃)
Figure 20 Gate Theshold Variation vs Junction
Temperature
10000
20
18
f=1MHz
CT, JUNCTION CAPACITANCE (pF)
VGS = 0V
16
IS, SOURCE CURRENT (A)
-25
14
12
10
TA = 150oC
8
6
TA = 125oC
4
TA = 85oC
TA = 25oC
2
1000
Ciss
Coss
100
Crss
TA = -55oC
10
0
0
0.3
0.6
0.9
1.2
0
1.5
Document number: DS37634 Rev. 4 - 2
4
6
8
10
12
14
16
18
20
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 22 Typical Junction Capacitance
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 21 Diode Forward Voltage vs. Current
DMC1028UFDB
2
7 of 10
www.diodes.com
May 2015
© Diodes Incorporated
100
8
DMC1028UFDB
ID, DRAIN CURRENT (A)
RDS(ON)
Limited
VGS (V)
PW =100ms
10
6
4
VDS = -10V, ID = -4.9A
2
1
DC
PW =10s
PW =1s
TJ(Max)=150℃
TA=25℃
PW =10ms
VGS=4.5V
PW =1ms
Single Pulse
DUT on 1*MRP Board PW =100µs
0.1
0.01
0
0
2
4
6
8
10
0.1
12
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 24 SOA, Safe Operation Area
Qg (nC)
Figure 23 Gate Charge
Typical Characteristics - P-CHANNEL (cont.)
r(t), TRANSIENT THERMAL RESISTANCE
1
D=0.5
D=0.9
D=0.3
D=0.7
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
RθJA(t)=r(t) * RθJA
RθJA=166℃/W
Duty Cycle, D=t1/t2
D=Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 25 Transient Thermal Resistance
DMC1028UFDB
Document number: DS37634 Rev. 4 - 2
8 of 10
www.diodes.com
May 2015
© Diodes Incorporated
DMC1028UFDB
Typical Application Circuit
DMC1028UFDB is designed for Point-of-Load (POL) converter that is stepping down from a nominal 3.3V to 1V with a load current up to 3A. This
is implemented with a separate ASIC that is PWM signaling the complementary MOSFETs to act as a synchronous buck converter. The control
switch (Q2) is implemented with P-channel MOSFETs to avoid needing a charge pump and with the 3.3V to 1V step down, which has a duty cycle
of 33%. This means that for 67% of the cycle, the synchronous switch (Q1) is on and efficiency is dominated by the conduction losses; hence, the
need for low RDS(on) N-channel MOSFETs. Whereas for the control switch (Q2), the gate charge needs to be minimized as the switching losses
become significant.
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
A
A3
SEATING PLANE
A1
D
Pin#1 ID
D2
z
d
E
E2
f
f
L
e
DMC1028UFDB
Document number: DS37634 Rev. 4 - 2
b
9 of 10
www.diodes.com
U-DFN2020-6
Type B
Dim
Min
Max Typ
A
0.545 0.605 0.575
A1
0
0.05 0.02
A3
0.13


b
0.20 0.30 0.25
D
1.95 2.075 2.00
d
0.45


D2
0.50 0.70 0.60
e
0.65


E
1.95 2.075 2.00
E2
0.90 1.10 1.00
f
0.15


L
0.25 0.35 0.30
z

 0.225
All Dimensions in mm
May 2015
© Diodes Incorporated
DMC1028UFDB
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C
Y
G
X2
Dimensions Value (in mm)
Z
1.67
G
0.20
G1
0.40
X1
1.0
X2
0.45
Y
0.37
Y1
0.70
C
0.65
G1
X1
G
Y1
Z
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
www.diodes.com
DMC1028UFDB
Document number: DS37634 Rev. 4 - 2
10 of 10
www.diodes.com
May 2015
© Diodes Incorporated
Similar pages