DMHC3025LSD

DMHC3025LSD
30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE
Device
V(BR)DSS
N-Channel
30V
P-Channel
-30V
Features
RDS(ON) max
ID max
TA = +25°C
25mΩ @ VGS = 10V
6.0
40mΩ @ VGS = 4.5V
4.6
50mΩ @ VGS = -10V
-4.2
80mΩ @ VGS = -4.5V
-3.2









This new generation complementary MOSFET H-Bridge features low
on-resistance achievable with low gate drive.



Applications


2 x N + 2 x P channels in a SOIC package
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description
DC Motor control
DC-AC Inverters

Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish  Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
P2G
P1S/P2S
N2D/P2D
P1G
NEW PRODUCT
ADVANCE INFORMATION
Product Summary
SO-8
H-Bridge
N2G
N1S/N2S
N1D/P1D
N1G
Top View
Pin Configuration
Top View
Internal Schematic
Ordering Information (Note 4)
Part Number
DMHC3025LSD-13
Notes:
Case
SO-8
Packaging
2500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
= Manufacturer’s Marking
C3025LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01 - 53)
C3025LS
YY WW
1
DMHC3025LSD
Document number: DS35821 Rev. 4 - 2
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DMHC3025LSD
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
PD
Total Power Dissipation (Note 5)
Steady State
t < 10s
NEW PRODUCT
ADVANCE INFORMATION
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Value
1.5
83
50
14.5
-55 to 150
Units
W
Units
V
V
ID
Value
30
±20
6.0
4.8
ID
7.8
6.1
A
ID
4.6
3.6
A
RθJA
RθJC
TJ, TSTG
°C/W
°C
Maximum Ratings N-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 10V
Steady
State
t < 10s
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
t < 10s
TA = +25C
TA = +70C
TA = +25C
TA = +70C
TA = +25C
TA = +70C
TA = +25C
TA = +70C
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
ID
IS
IDM
6.1
4.8
2.5
60
A
A
A
A
Maximum Ratings P-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = -10V
Steady
State
t < 10s
Continuous Drain Current (Note 5) VGS = -4.5V
Steady
State
t < 10s
TA = +25C
TA = +70C
TA = +25C
TA = +70C
TA = +25C
TA = +70C
TA = +25C
TA = +70C
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Note:
ID
Value
30
±20
-4.2
-3.3
ID
-5.4
-4.3
A
ID
-3.2
-2.5
A
ID
-4.3
-3.3
A
IS
IDM
-2.5
-30
Units
V
V
A
A
A
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
DMHC3025LSD
Document number: DS35821 Rev. 4 - 2
2 of 9
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November 2013
© Diodes Incorporated
DMHC3025LSD
NEW PRODUCT
ADVANCE INFORMATION
Electrical Characteristics N-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
30
—
—
—
—
—
—
0.5
±1
V
μA
μA
VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(th)
RDS (ON)
|Yfs|
VSD
—
19
26
4
0.70
2
25
40
—
1.2
V
Static Drain-Source On-Resistance
1
—
—
—
—
VDS = VGS, ID = 250μA
VGS = 10V, ID = 5A
VGS = 4.5V, ID = 4A
VDS = 5V, ID = 5A
VGS = 0V, IS = 1.7A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
—
—
—
—
—
—
—
—
—
—
—
—
—
—
590
122
58
1.5
5.4
11.7
1.8
2.1
11.2
15
17.5
8.7
18.3
12
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
mΩ
S
V
Test Condition
pF
VDS = 15V, VGS = 0V,
f = 1MHz
Ω
VDS = 0V, VGS = 0V, f = 1MHz
nC
VDS = 15V, ID = 7.8A
ns
VDD = 15V, VGS = 4.5V,
RL = 2.4Ω, RG = 1Ω,
ns
nC
IF = 12A, di/dt = 500A/μs
Electrical Characteristics P-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-30
—
—
—
—
—
—
-0.5
±1
V
μA
μA
VGS = 0V, ID = -250μA
VDS = -30V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(th)
RDS (ON)
|Yfs|
VSD
—
43
68
3.5
-0.7
-2
50
80
—
-1.2
V
Static Drain-Source On-Resistance
-1
—
—
—
—
VDS = VGS, ID = -250μA
VGS = -10V, ID = -5A
VGS = -4.5V, ID = -4A
VDS = -5V, ID = -5A
VGS = 0V, IS = -1.7A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
—
—
—
—
—
—
—
—
—
—
—
—
—
—
631
137
70
10.8
5.5
11.4
1.8
2.4
7.5
4.9
28.2
13.5
15.1
15.3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
mΩ
S
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Test Condition
VDS = -15V, VGS = 0V,
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = -15V, ID = -6A
VDD = -15V, VGS = -10V,
RG = 6Ω, ID = -1A
IF = 12A, di/dt = 500A/μs
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMHC3025LSD
Document number: DS35821 Rev. 4 - 2
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DMHC3025LSD
Typical Characteristics - N-CHANNEL
20
20
VGS = 10V
18
16
15
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VDS = 5.0V
VGS = 4.5V
VGS = 3.0V
VGS = 3.5V
10
VGS = 3.0V
5
14
12
10
TA = 150°C
8
TA = 125°C
6
T A = 85°C
4
0
VGS = 2.2V
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.04
0.03
VGS = 4.5V
VGS = 10V
0.01
0
0
2
0
5
0.05
0.02
T A = -55°C
0
1
2
3
4
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
5
0.15
0.12
0.09
0.06
ID = 5.0A
0.03
4
6
8 10 12 14 16 18 20
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
ID = 4.0A
0
0
2
4
6
8 10 12 14 16 18 20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
1.8
0.08
VGS = 4.5V
0.06
TA = 150°C
0.04
TA = 125°C
TA = 85°C
TA = 25°C
0.02
0
TA = 25°C
2
VGS = 2.5V
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
NEW PRODUCT
ADVANCE INFORMATION
VGS = 3.0V
TA = -55°C
0
2
4
6
8 10 12 14 16 18
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
DMHC3025LSD
Document number: DS35821 Rev. 4 - 2
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1.6
VGS = 10V
ID = 10A
1.4
1.2
VGS = 4.5V
ID = 5A
1.0
0.8
0.6
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
November 2013
© Diodes Incorporated
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.06
3.0
0.05
2.5
VGS = 4.5V
ID = 5A
0.04
2.0
ID = 1mA
0.03
1.5
ID = 250µA
0.02
1.0
VGS = 10V
ID = 10A
0.01
0.5
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 7 On-Resistance Variation with Temperature
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
CT, JUNCTION CAPACITANCE (pF)
IS, SOURCE CURRENT (A)
0
-50
1,000
20
15
10
TA = 150°C
T A = 125°C
TA = 85°C
5
T A = 25°C
Ciss
100
Coss
Crss
TA = -55°C
0
0
f = 1MHz
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
10
0
5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
30
10
VGS GATE THRESHOLD VOLTAGE (V)
NEW PRODUCT
ADVANCE INFORMATION
DMHC3025LSD
VDS = 15V
ID = 7.8A
8
6
4
2
0
0
2
4
6
8
10
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
DMHC3025LSD
Document number: DS35821 Rev. 4 - 2
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DMHC3025LSD
Typical Characteristics - P-CHANNEL
20
20
VGS = -10V
18
VGS = -5.0V
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
VGS = -4.0V
10
VGS = -3.5V
5
VGS = -2.2V
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.16
0.14
0.12
0.10
0.08
VGS = -4.5V
0.06
VGS = -10V
0.02
0
0
2
4
6
8 10 12 14 16 18
-ID, DRAIN SOURCE CURRENT (A)
Figure 14 Typical On-Resistance vs.
Drain Current and Gate Voltage
8
6
TA = 150C
TA = 125 C
TA = 85C
TA = 25C
TA = -55C
0
1
2
3
4
-VGS, GATE-SOURCE VOLTAGE (V)
Figure 13 Typical Transfer Characteristics
5
0.15
ID = -5.0A
0.12
0.09
ID = -4.0A
0.06
0.03
20
0
0
2
4
6
8 10 12 14 16 18 20
-VGS, GATE-SOURCE VOLTAGE (V)
Figure 15 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
1.6
0.3
VGS = -10V
ID = -10A
VGS = -4.5V
0.2
TA = 150C
TA = 125C
0.1
TA = 85C
TA = 25C
TA = -55C
0
10
0
5
0.18
0.04
12
2
VGS = -2.5V
1
2
3
4
-VDS, DRAIN -SOURCE VOLTAGE (V)
Figure 12 Typical Output Characteristics
14
4
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0
VDS = -5.0V
16
15
VGS = -3.0V
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
NEW PRODUCT
ADVANCE INFORMATION
VGS = -4.5V
0
2
4
6
8 10 12 14 16 18 20
-ID, DRAIN SOURCE CURRENT (A)
Figure 16 Typical On-Resistance vs.
Drain Current and Temperature
DMHC3025LSD
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1.4
1.2
VGS = -4.5V
ID = -5A
1.0
0.8
0.6
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 17 On-Resistance Variation with Temperature
November 2013
© Diodes Incorporated
3.0
VGS(TH), GATE THRESHOLD VOLTAGE (V)
RDS(on), DRAIN-SOURCE ON-RESISTANCE ()
0.10
0.09
0.08
0.07
VGS = -4.5V
ID = -5A
0.06
0.05
VGS = -10V
ID = -10A
0.04
0.03
0.02
0.01
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 18 On-Resistance Variation with Temperature
2.0
-ID = 250µA
1.5
-ID = 1mA
1.0
0.5
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 19 Gate Threshold Variation vs. Ambient Temperature
CT, JUNCTION CAPACITANCE (pF)
-IS, SOURCE CURRENT (A)
15
10
TA= 150C
5
TA= 125C
TA= 85C
TA= 25C
0
2.5
1,000
20
100
Coss
Crss
f = 1MHz
TA= -55 C
0
Ciss
0.3
0.6
0.9
1.2
1.5
-VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 20 Diode Forward Voltage vs. Current
10
0
5
10
15
20
25
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 21 Typical Junction Capacitance
30
10
-VGS, GATE-SOURCE VOLTAGE (V)
NEW PRODUCT
ADVANCE INFORMATION
DMHC3025LSD
8
VDS = -15V
ID = -6A
6
4
2
0
Qg, TOTAL GATE CHARGE (nC)
Figure 22 Gate-Charge Characteristics
DMHC3025LSD
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DMHC3025LSD
Package Outline Dimensions
0.254
NEW PRODUCT
ADVANCE INFORMATION
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
E1 E
A1
L
Gauge Plane
Seating Plane
Detail ‘A’
7°~9°
h
45°
Detail ‘A’
A2 A A3
b
e
D
SO-8
Dim
Min
Max
A
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
0.35
L
0.62
0.82
0
8

All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
C1
C2
Dimensions
X
Y
C1
C2
Value (in mm)
0.60
1.55
5.4
1.27
Y
DMHC3025LSD
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DMHC3025LSD
IMPORTANT NOTICE
NEW PRODUCT
ADVANCE INFORMATION
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
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final and determinative format released by Diodes Incorporated.
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
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