DMP2066UFDE

DMP2066UFDE
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
Features
RDS(ON)
Package
36mΩ @ VGS = -4.5V
-20V
56mΩ @ VGS = -2.5V
•
•
•
•
•
•
•
ID
TA = +25°C
-6.2A
U-DFN2020-6
Type E
-5.0A
-4.2A
75mΩ @ VGS = -1.8V
0.6mm profile – ideal for low profile applications
2
PCB footprint of 4mm
Low Gate Threshold Voltage
Low On-Resistance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
•
•
•
Mechanical Data
•
•
Case: U-DFN2020-6 Type E
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Weight: 0.0065 grams (approximate)
•
•
•
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
U-DFN2020-6
Type E
6 D
D 1
5 D
D 2
Pin1
4 S
Bottom View
S
G 3
Bottom View
Internal Schematic
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMP2066UFDE-7
Notes:
Case
U-DFN2020-6 Type E
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
2012
Z
Feb
2
DMP2066UFDE
Document number: DS35496 Rev. 5 - 2
Mar
3
YM
PC
PC = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Dot Denotes Pin 1
2013
A
Apr
4
May
5
2014
B
Jun
6
1 of 6
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2015
C
Jul
7
Aug
8
2016
D
Sep
9
Oct
O
2017
E
Nov
N
Dec
D
July 2012
© Diodes Incorporated
DMP2066UFDE
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = -4.5V
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Steady
State
t<5s
Continuous Drain Current (Note 5) VGS = -1.8V
Steady
State
t<5s
ID
Value
-20
±12
-6.2
-4.9
ID
-7.5
-5.9
A
ID
-4.2
-3.4
A
A
-5.2
-4.1
-25
2.5
ID
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 5)
Units
V
V
IDM
IS
A
A
A
Thermal Characteristics
Characteristic
Symbol
PD
Total Power Dissipation (Note 6)
Steady state
t<5s
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
Total Power Dissipation (Note 5)
PD
Steady state
t<5s
Thermal Resistance, Junction to Ambient (Note 5)
RθJA
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
RθJc
TJ, TSTG
Value
0.66
189
123
2.03
61
40
9.3
-55 to +150
Units
W
°C/W
°C/W
W
°C/W
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-20
⎯
⎯
⎯
⎯
⎯
⎯
-1
±100
µA
VGS(th)
Static Drain-Source On-Resistance
RDS (ON)
|Yfs|
VSD
-0.4
⎯
⎯
⎯
⎯
⎯
⎯
25
33
50
9
-0.7
-1.1
36
56
75
⎯
-1.2
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1537
146
127
10.4
14.4
2.6
2.7
13.7
14.0
79.1
35.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
V
nA
V
mΩ
S
V
pF
pF
pF
Ω
Test Condition
VGS = 0V, ID = -250µA
VDS = -20V, VGS = 0V
VGS = ±12.0V, VDS = 0V
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -4.6A
VGS = -2.5V, ID = -3.8A
VGS = -1.8V, ID = -2.0A
VDS = -10V, ID = -4.5A
VGS = 0V, IS = -2.1A
VDS = -10V, VGS = 0V
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
VDS = -10V, VGS = -4.5V
ID = -4.5A
ns
VDD = -10V, VGS = -4.5V, RG = 6Ω,
RL = 10Ω, ID = -1A
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMP2066UFDE
Document number: DS35496 Rev. 5 - 2
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July 2012
© Diodes Incorporated
DMP2066UFDE
15
15
ID , DRAIN CURRENT (A)
20
ID, DRAIN CURRENT (A)
20
10
10
5
0
0
0.5
1
1.5 2 2.5 3 3.5
4 4.5
VDS, DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
0
0
5
0.06
RDS(ON), DRAIN-SOURCE ON-RESISTANCE(Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE(Ω)
0.5
1
1.5
2
2.5
VGS, GATE SOURCE VOLTAGE(V)
Fig. 2 Typical Transfer Characteristics
0.05
0.08
VGS = 1.8V
VGS = 2.5V
0.04
VGS= 4.5V
0.02
0
0
5
10
15
ID, DRAIN SOURCE CURRENT
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
20
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
1.7
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(Normalized)
5
1.5
1.3
1.1
0.9
0.7
0.5
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
DMP2066UFDE
Document number: DS35496 Rev. 5 - 2
3 of 6
www.diodes.com
3
TA=150°C
VGS = 10V
TA=85°C
TA=125°C
0.04
0.03
0.02
TA=25°C
TA=-55°C
0.01
0
0
5
10
15
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
20
0.06
0.05
0.04
0.03
0.02
0.01
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
July 2012
© Diodes Incorporated
DMP2066UFDE
20
1
IS, SOURCE CURRENT (A)
VGS(th), GATE THRESHOLD VOLTAGE (V)
1.2
0.8
ID= 1mA
0.6
ID= -250µA
0.4
16
12
TA= 25°C
8
4
0.2
0
-50
0
0.2
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0.4
0.6
0.8
1
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
10000
100000
f = 1MHz
CT, JUNCTION CAPACITANCE (pF)
IDSS, LEAKAGE CURRENT (nA)
TA = 150°C
10000
1000
100
TA = 85° C
10
C ISS
1000
CRSS
COSS
TA = 25° C
1
100
0
5
10
15
20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Drain-Source Leakage Current vs. Voltage
RDS(on)
Limited
4
-ID, DRAIN CURRENT (A)
VGS, GATE SOURCE VOLTAGE (V)
-4
-8
-12
-16
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Junction Capacitance
-20
100
5
3
2
1
0
0
0
PW = 100µs
10
1
DC
PW = 10s
PW = 1s
PW = 100ms
PW = 10ms
PW = 1ms
0.1 T
J(max) = 150°C
TA = 25°C
VGS = -12V
Single Pulse
0.01 DUT on 1 * MRP Board
2
4
6
8
10 12 14
16
QG, TOTAL GATE CHARGE (nC)
Fig. 11 Gate Charge Characteristics
DMP2066UFDE
Document number: DS35496 Rev. 5 - 2
18
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0.1
1
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
100
July 2012
© Diodes Incorporated
DMP2066UFDE
r(t), TRANSIENT THERMAL RESISTANCE
1
0.1
0.01
0.001
0.00001
0.001
0.0001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Fig. 13 Transient Thermal Resistance
10
100
1000
Package Outline Dimensions
A1
A
A3
D
b1
K1
D2
E E2
L1
L(2X)
K2
Z(4X)
DMP2066UFDE
Document number: DS35496 Rev. 5 - 2
e
b(6X)
5 of 6
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U-DFN2020-6
Type E
Dim
Min
Max
Typ
A
0.57
0.63
0.60
A1
0
0.05
0.03
A3
0.15
−
−
b
0.25
0.35
0.30
b1
0.185 0.285 0.235
D
1.95
2.05
2.00
D2
0.85
1.05
0.95
E
1.95
2.05
2.00
E2
1.40
1.60
1.50
e
0.65
−
−
L
0.25
0.35
0.30
L1
0.82
0.92
0.87
K1
0.305
−
−
K2
0.225
−
−
Z
0.20
−
−
All Dimensions in mm
July 2012
© Diodes Incorporated
DMP2066UFDE
Suggested Pad Layout
Dimensions
Y3 Y2
X2
Y1
X1
X (6x)
C
C
X
X1
X2
Y
Y1
Y2
Y3
Value
(in mm)
0.650
0.400
0.285
1.050
0.500
0.920
1.600
2.300
Y (2x)
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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Copyright © 2012, Diodes Incorporated
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DMP2066UFDE
Document number: DS35496 Rev. 5 - 2
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© Diodes Incorporated
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