MTB60B06Q8

CYStech Electronics Corp.
Spec. No. : C796Q8
Issued Date : 2013.07.08
Revised Date :
Page No. : 1/9
Dual P-Channel Logic Level Enhancement Mode Power MOSFET
MTB60B06Q8
BVDSS
-60V
ID
RDSON(MAX)@VGS=-10V, ID=-3.5A
-4.5A
56mΩ(typ.)
RDSON(MAX)@VGS=-4.5V, ID=-3A
66mΩ(typ.)
Description
The MTB60B06Q8 provides the designer with the best combination of fast switching, ruggedized device
design, ultra low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications.
Features
• RDS(ON)=75mΩ(max.)@VGS=-10V, ID=-3.5A
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Dual P-ch MOSFET package
• Pb-free lead plating & halogen-free package
Equivalent Circuit
MTB60B06Q8
Outline
SOP-8
G：Gate
S：Source
D：Drain
MTB60B06Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C796Q8
Issued Date : 2013.07.08
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, TC=25 °C
Continuous Drain Current, TC=100 °C
Continuous Drain Current, TA=25 °C
Continuous Drain Current, TA=70 °C
Pulsed Drain Current (Note 1)
TA=25°C (Note 3)
TA=100°C
Operating Junction and Storage Temperature Range
Power Dissipation
Symbol
Limits
VDS
VGS
-60
±20
-7
-5
-4.5
-3.8
-20
2.4
1.3
-55~+175
ID
IDM
PD
Tj ; Tstg
Unit
V
A
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
25
62.5
*3
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad
MTB60B06Q8
Unit
°C/W
°C/W
CYStek Product Specification
Spec. No. : C796Q8
Issued Date : 2013.07.08
Revised Date :
Page No. : 3/9
CYStech Electronics Corp.
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
BVDSS
VGS(th)
IGSS
-60
-1
-4.5
-
-1.5
56
66
9
-2.5
±100
-1
-10
75
90
-
V
V
nA
-
21
4.4
5.1
15
10
47
25
1460
72
61
-
-
-0.78
12
8
-2.3
-9.2
-1.2
-
Test Conditions
Static
IDSS
ID(ON) *1
*RDS(ON) *1
GFS *1
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf *1, 2
Ciss
Coss
Crss
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr *1
Qrr *1
S
VGS=0V, ID=-250μA
VDS = VGS, ID=-250μA
VGS=±20V
VDS =-48V, VGS =0V
VDS =-48V, VGS =0V, Tj=125°C
VDS =-5V, VGS =-10V
VGS =-10V, ID=-3.5A
VGS =-4.5V, ID=-3A
VDS =-5V, ID=-3.5A
nC
VDS=-30V, ID=-4.5A, VGS=-10V
ns
VDS=-30V, ID=-1A,VGS=-10V,
RG=6Ω
pF
VGS=0V, VDS=-25V, f=1MHz
μA
A
mΩ
A
V
ns
nC
IF= IS, VGS=0V
IF= IS, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Ordering Information
Device
MTB60B06Q8-0-T3-G
MTB60B06Q8
Package
SOP-8
(Pb-free lead plating & Halogen-free package)
Shipping
2500 pcs / Tape & Reel
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C796Q8
Issued Date : 2013.07.08
Revised Date :
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
-BVDSS, Normalized Drain-Source
Breakdown Voltage
20
-ID, Drain Current(A)
10V,9V,8V,7V,6V,5V,4V
15
10
-VGS=3V
5
1.2
1
0.8
0.6
ID=-250μA,
VGS=0V
-VGS=2V
0.4
0
0
1
2
3
4
-VDS, Drain-Source Voltage(V)
-75 -50 -25
5
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
-VSD, Source-Drain Voltage(V)
R DS(ON) , Static Drain-Source On-State
Resistance(mΩ)
1000
VGS=-2.5V
100
VGS=-3V
VGS=-3.5V
VGS=-4.5V
VGS=-10V
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
10
0.01
0.1
1
10
-ID, Drain Current(A)
0
100
2
360
1.8
R DS(ON) , Normalized Static DrainSource On-State Resistance
400
320
280
240
200
ID=-3.5A
160
120
80
1
MTB60B06Q8
VGS=-10V, ID=-3.5A
0.8
0.6
0.2
10
VGS=-4.5V, ID=-3A
1.2
0
4
6
8
-VGS, Gate-Source Voltage(V)
10
1.4
0.4
2
4
6
8
-IDR, Reverse Drain Current(A)
1.6
40
0
2
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C796Q8
Issued Date : 2013.07.08
Revised Date :
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
-VGS(th) , Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
1000
C oss
100
Crss
1.6
1.4
ID=-250uA
1.2
1
0.8
0.6
0.4
0.2
10
0.1
1
10
-VDS, Drain-Source Voltage(V)
-75 -50 -25
100
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
Maximum Safe Operating Area
10
100
10
-VGS, Gate-Source Voltage(V)
-ID, Drain Current (A)
VDS=-12V
RDSON
limited
100μs
1ms
10ms
1
100ms
1s
0.1
TA=25°C, Tj=175°C
VGS=-10V, RθJA=62.5°C/W
Single Pulse
DC
8
VDS=-30V
VDS=-48V
6
4
2
ID=-4.5A
0
0.01
0.01
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
0
1000
Forward Transfer Admittance vs Drain Current
8
12
16
Qg, Total Gate Charge(nC)
20
24
Maximum Drain Current vs Junction Temperature
100
5
-ID, Maximum Drain Current(A)
GFS, Forward Transfer Admittance(S)
4
10
1
VDS=-5V
Pulsed
Ta=25°C
0.1
4.5
4
3.5
3
2.5
2
1.5
1
0.5
TA=25°C, VGS=-10V, RθJA=62.5°C/W
0
0.01
0.01
MTB60B06Q8
0.1
1
10
-ID, Drain Current(A)
100
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C796Q8
Issued Date : 2013.07.08
Revised Date :
Page No. : 6/9
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
300
TJ(MAX) =175°C
TA=25°C
θJA=62.5°C/W
250
VDS=-10V
15
200
-ID, Drain Current(A)
Power (W)
Typical Transfer Characteristics
20
150
100
10
5
50
0
0.001
0
0.01
0.1
1
Pulse Width(s)
10
100
0
1
2
3
-VGS , Gate-Source Voltage(V)
4
5
Transient Thermal Response Curves
r(t), Normalized Effective Transient Thermal
Resistance
1
D=0.5
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM *RθJA(t)
4.RθJA=62.5°C/W
0.1
0.01
0.2
0.1
0.05
0.02
0.01
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTB60B06Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C796Q8
Issued Date : 2013.07.08
Revised Date :
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTB60B06Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C796Q8
Issued Date : 2013.07.08
Revised Date :
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB60B06Q8
CYStek Product Specification
Spec. No. : C796Q8
Issued Date : 2013.07.08
Revised Date :
Page No. : 9/9
CYStech Electronics Corp.
SOP-8 Dimension
Right side View
G
Top View
A
Marking:
I
C
B
H
Device Name
Date Code
J
E
D
B60B06
K
Front View
Part A
Part A
M
L
N
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
O
F
*: Typical
Inches
Min.
Max.
0.1850
0.2007
0.1457
0.1614
0.2283
0.2441
0.0500*
0.0130
0.0201
0.1472
0.1527
0.0472
0.0638
0.1889
0.2007
DIM
A
B
C
D
E
F
G
H
Millimeters
Min.
Max.
4.70
5.10
3.70
4.10
5.80
6.20
1.27*
0.33
0.51
3.74
3.88
1.20
1.62
4.80
5.10
DIM
I
J
K
L
M
N
O
Inches
Min.
Max.
0.0031
0.0110
0.0157
0.0323
0.0074
0.0102
0.0145
0.0204
0.0118
0.0197
0.0031
0.0051
0.0000
0.0059
Millimeters
Min.
Max.
0.08
0.28
0.40
0.83
0.19
0.26
0.37
0.52
0.30
0.50
0.08
0.13
0.00
0.15
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB60B06Q8
CYStek Product Specification