BSP452 Data Sheet (184 KB, EN)

Smart High-Side Power Switch
BSP452
• High-side switch
• Short-circuit protection
• Input protection
• Overtemperature protection with hysteresis
• Overload protection
• Overvoltage protection
• Switching inductive load
• Clamp of negative output voltage with inductive loads
• Undervoltage shutdown
• Maximum current internally limited
• Electrostatic discharge (ESD) protection
1
• Reverse battery protection )
• AEC qualified
SOT 223
•Package:
Green product
(RoHS compliant)
Type
Ordering code
BSP 452
Q67000-S271
SOT-223
1
SOT-223
PG-SOT-223
Application
• µC compatible power switch for 12 V DC grounded loads
• All types of resistive, inductive and capacitive loads
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input,monolithically
integrated in Smart SIPMOS technology. Fully protected by embedded protection functions.
Blockdiagramm:
+ Vbb
Voltage
Overvoltage
Current
Gate
source
protection
limit
protection
V Logic
ESDDiode
Voltage
Charge pump
sensor
Level shifter
Rectifier
3
R
IN
4
Limit for
unclamped
ind. loads
OUT
Temperature
sensor
1
in
Load
ESD
Logic
miniPROFET
GND
2
Signal GND
1)
Load GND
With resistor RGND=150 Ω in GND connection, resistor in series with IN connections reverse load current
limited by connected load.
Data Sheet
1
V1.0, 2007-05-25
Smart High-Side Power Switch
BSP452
Pin
Symbol
Function
1
OUT
O
Output to the load
2
GND
-
Logic ground
3
IN
I
Input, activates the power switch in case of logical high signal
4
Vbb
+
Positive power supply voltage
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Supply voltage
Load current
self-limited
2)
Maximum input voltage
Maximum input current
Inductive load switch-off energy dissipation,
IL = 0.5A , TA = 150°C
single pulse
(not tested, specified by design)
Load dump protection3) VLoadDump=UA+Vs
RL= 24Ω
RI=2Ω , td=400ms, IN= low or high, UA=13,5V RL= 80Ω
(not tested, specified by design)
Electrostatic discharge capability (ESD)5)
PIN 3
PIN 1,2,4
Symbol
Vbb
IL
VIN
IIN
EAS
Operating temperature range
Storage temperature range
6
Max. power dissipation (DC) )
TA = 25 °C
Tj
Tstg
Ptot
chip - soldering point:
chip - ambient:6)
RthJS
RthJA
Thermal resistance
VLoad dump4)
VESD
Values
40
IL(SC)
-5.0...Vbb
±5
0.5
Unit
V
A
V
mA
J
60
80
V
±1
±2
-40 ...+150
-55 ...+150
1.8
kV
7
70
K/W
°C
W
2)
At VIN > Vbb, the input current is not allowed to exceed ±5 mA.
Supply voltages higher than Vbb(AZ) require an external current limit for the GND pin, e.g. with a 150 Ω resistor in the GND connection
A resistor for the protection of the input is integrated.
4)
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
5)
HBM according to MIL-STD 883D, Methode 3015.7
6)
BSP 452 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for Vbb connection
3)
Data Sheet
2
V1.0, 2007-05-25
Smart High-Side Power Switch
BSP452
Electrical Characteristics
Parameter and Conditions
Symbol
Values
typ
max
---
0.16
--
0.2
0.4
Ω
0.7
--
--
A
ton
toff
---
60
60
100
150
µs
dV /dton
--
2
4
V/µs
-dV/dtoff
--
2
4
V/µs
VIN
VIN(T+)
-3.0
--
---
Vbb
3.5
V
V
VIN(T-)
1.5
--
--
V
∆VIN(T)
IIN(off)
-10
0.5
--
-60
V
µA
IIN(on)
10
--
100
µA
RIN
1.5
2.8
3.5
kΩ
at Tj = 25 °C, Vbb = 13.5V unless otherwise specified
min
Load Switching Capabilities and Characteristics
On-state resistance (pin 4 to 1)
IL = 0.5 A, Vin = high
Tj = 25°C
Tj = 150°C
7)
Nominal load current (pin 4 to 1)
ISO Standard: VON = Vbb - VOUT = 0.5 V
TS = 85 °C
Turn-on time
to 90% VOUT
Turn-off time
to 10% VOUT
RL = 24 Ω
Slew rate on
10 to 30% VOUT, RL = 24 Ω
Slew rate off
70 to 40% VOUT, RL = 24 Ω
Input
Allowable input voltage range, (pin 3 to 2)
Input turn-on threshold voltage
Tj = -40...+150°C
Input turn-off threshold voltage
Tj = -40...+150°C
Input threshold hysteresis
Off state input current (pin 3)
VIN(off) = 1.2 V
Tj = -40...+150°C
On state input current (pin 3) VIN(on) = 3.0 V to Vbb
Tj = -40...+150°C
Input resistance
7)
RON
IL(ISO)
Unit
IL(ISO) is limited by current limitation, see IL(SC), next page
Data Sheet
3
V1.0, 2007-05-25
Smart High-Side Power Switch
BSP452
Parameter and Conditions
Symbol
at Tj = 25 °C, Vbb = 13.5V unless otherwise specified
min
Operating Parameters
Operating voltage8)
Undervoltage shutdown
Undervoltage restart
Tj =-40...+150°C
Tj =-40...+150°C
Tj =-40...+25°C
Tj =+150°C
Undervoltage restart of charge pumpe
see diagram page 77
Undervoltage hysteresis
∆Vbb(under) = Vbb(u rst) - Vbb(under)
Overvoltage shutdown
Tj =-40...+150°C
Overvoltage restart
Tj =-40...+150°C
Overvoltage hysteresis
Tj =-40...+150°C
Standby current (pin 4), Vin = low Tj =-40...+150°C
Operating current (pin 2), Vin = 5 V
leakage current (pin 1) Vin = low
Tj =-40...+25°C
Tj =150°C
Protection Functions
Current limit (pin 4 to 1)
Tj = 25°C
Vbb = 20V
Tj = -40...+150°C
Overvoltage protection Ibb=4mA Tj =-40...+150°C
Output clamp (ind. load switch off)
at VOUT=Vbb-VON(CL), Ibb = 4mA
Thermal overload trip temperature
Thermal hysteresis
9
Inductive load switch-off energy dissipation )
Tj Start = 150 °C, single pulse, IL = 0.5 A, Vbb = 12 V
(not tested, specified by design)
10
Reverse battery (pin 4 to 2) )
Vbb(on)
Vbb(under)
Vbb(u rst)
Values
typ
5.0
3.5
--
----
Vbb(ucp)
--
∆Vbb(under)
Unit
max
V
V
V
5.6
34
5
6.5
7.0
7
--
0.3
--
V
Vbb(over)
Vbb(o rst)
∆Vbb(over)
Ibb(off)
IGND
IL(off)
34
33
-----
--0.7
10
1
2
42
--25
1.6
5
7
V
V
V
µA
mA
µA
IL(SC)
1.5
--47
2
2.4
---
A
Vbb(AZ)
VON(CL)
0.7
0.7
41
41
V
V
Tjt
∆Tjt
EAS
150
---
-10
--
--0.5
°C
K
J
-Vbb
--
--
30
V
V
(not tested, specified by design)
8)
At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V
While demagnetizing load inductance, dissipated energy in PROFET is EAS= ∫ VON(CL) * iL(t) dt, approx.
2
V
EAS= 1/2 * L * IL * (V ON(CL)
)
ON(CL) - Vbb
10)
Requires 150 Ω resistor in GND connection. Reverse load current (through intrinsic drain-source diode) is normally limited by the
connected load.
9)
Data Sheet
4
V1.0, 2007-05-25
Smart High-Side Power Switch
BSP452
Max. allowable power dissipation
Ptot = f (TA,TSP)
Current limit characteristic
IL(SC) = f (Von); (Von see testcircuit)
Ptot [W]
IL(SC) [A]
18
2
16
1.8
1.6
14
1.4
12
TSP
150°C
1.2
25°C
1
-40°C
10
8
0.8
6
0.6
4
0.4
TA
2
0.2
0
0
0
25
50
75
100
125
150
0
2
4
6
8
10
12
TA, TSP[°C]
14
Von [V]
On state resistance (Vbb-pin to OUT-pin)
RON = f (Tj); Vbb = 13.5 V; IL = 0.5 A
Typ. input current
IIN = f (VIN); Vbb = 13,5 V
RON [Ω]
IIN [µA]
0.4
50
-40°C
45
0.35
40
+ 25°C
0.3
35
98%
0.25
+150°C
30
0.2
25
20
0.15
15
0.1
10
0.05
5
0
0
-50
-25
0
25
50
75
0
100 125 150
Tj [°C]
Data Book
Data Sheet
5
5
2
4
6
8
10
12
14
VIN [V]
20 08 96
V1.0, 2007-05-25
Smart High-Side Power Switch
BSP452
Typ. operating current
IGND = f (Tj); Vbb = 13,5 V; VIN = high
Typ. overload current
IL(lim) = f (t); Vbb = 13,5 V, no heatsink, Param.: Tjstart
IGND [mA]
IL(lim) [A]
0.8
1.4
0.7
1.2
0.6
1
0.5
0.8
+150°C
0.4
+25°C
-40°C
0.6
0.3
0.4
0.2
0.2
0.1
0
0
-50
-25
0
25
50
75
100
125
150
-50
0
50
100 150 200 250 300 350 400
Tj [°C]
t [ms]
Typ. standby current
Ibb(off) = f (Tj); Vbb = 13,5 V; VIN = low
Short circuit current
IL(SC) = f (Tj); Vbb = 13,5 V
Ibb(off) [µA]
IL(SC) [A]
8
1.4
7
1.2
6
1
5
0.8
4
0.6
3
0.4
2
0.2
1
0
-50
0
-50
-25
Data Sheet
0
25
50
75
100
125
150
-25
0
25
50
75
100
125
150
Tj [°C]
Tj [°C]
6
V1.0, 2007-05-25
Smart High-Side Power Switch
BSP452
Typ. input turn on voltage threshold
VIN(T+) = f (Tj);
Figure 6: Undervoltage restart of charge pumpe
VIN(T+) [V]
VON [V]
3
13V
2.5
2
V bb(over)
1.5
V
1
V
bb(o rs t)
bb(u rs t)
V
0.5
bb(u c p)
V bb(under)
0
-50
-25
0
25
50
75
100
125
150
Tj [°C]
Vbb [V]
charge pump starts at Vbb(ucp) about 7 V typ.
Test circuit
Typ. on-state resistance (Vbb-Pin to Out-Pin)
RON = f (Vbb,IL); IL=0.5A, Tj = 25°C
RON [mΩ]
300
250
200
150
100
50
0
0
5
10
15
20
25
Vbb [V]
Data Sheet
7
V1.0, 2007-05-25
Smart High-Side Power Switch
BSP452
Package Outlines
1.6 ±0.1
6.5 ±0.2
0.1 max
+0.2
acc. to
DIN 6784
1
2
3.5 ±0.2
4
0.5 min
B
7 ±0.3
3 ±0.1
15˚max
A
3
0.28 ±0.04
2.3
0.7 ±0.1
4.6
0.25
Figure 1
M
0.25
A
M
B
PG-SOT-223 (Plastic Dual Small Outline Package) (RoHS-compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Please specify the package needed (e.g. green package) when placing an order
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Products”: http://www.infineon.com/products.
Data Sheet
8
Dimensions in mm
V1.0, 2007-05-25
Smart High-Side Power Switch
BSP452
Revision History
Version
1.0
Data Sheet
Date
Changes
2007-05-25
Creation of the green datasheet.
First page :
Adding the green logo and the AEC qualified
Adding the bullet AEC qualified and the RoHS compliant features
Package page
Modification of the package to be green.
9
V1.0, 2007-05-25
Edition 2007-05-25
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 5/29/07.
All Rights Reserved.
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disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
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