INFINEON BSP550

Mini PROFET® BSP 550
MiniPROFET
• High-side switch
• Short-circuit protection
• Input protection
• Overtemperature protection with hysteresis
• Overload protection
• Overvoltage protection
• Switching inductive load
• Clamp of negative output voltage with inductive loads
• Undervoltage shutdown
• Maximum current internally limited
• Electrostatic discharge (ESD) protection
• Reverse battery protection1)
4
3
2
1
Package: SOT 223
Pins
Type
Ordering code
BSP 550
Q67000-S311
1
2
3
4
OUT
GND
IN
Vbb
Maximum Ratings
Parameter
Supply voltage range
Load current
self-limited
Maximum input voltage2)
Maximum input current
Inductive load switch-off energy dissipation
single pulse
IL = 1.0A , TA = 85°C
Operating temperature range
Storage temperature range
Max. power dissipation (DC)3)
TA = 25 °C
Electrostatic discharge capability (ESD)4)
Symbol
Vbb
IL
VIN
IIN
EAS
Thermal resistance
chip - soldering point:
chip - ambient3)
Values
-0.3...48
IL(SC)
-5.0...Vbb
±5
0.3
Unit
V
A
V
mA
J
Tj
Tstg
Ptot
VESD
-40 ...+125
-55 ...+150
1.4
±1
°C
RthJS
RthJA
7
70
+ V bb
Voltage
Overvoltage
Current
Gate
source
protection
limit
protection
Voltage
Charge pump
sensor
Level shifter
Rectifier
R
IN
K/W
4
V Logic
ESDDiode
3
W
kV
Limit for
unclamped
ind. loads
OUT
Temperature
sensor
1
in
Load
ESD
Logic
MINI-PROFET
GND
2
Signal GND
Load GND
1) With resistor R
GND=150 Ω in GND connection, resistor in series with IN connections reverse load current
limited by connected load.
2) At V > V , the input current is not allowed to exceed ±5 mA.
IN
bb
3) BSP 550 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for V connection
bb
4) HBM according to MIL-STD 883D, Methode 3015.7
Semiconductor Group
1
06.96
BSP 550
Electrical Characteristics
Parameter and Conditions
Symbol
Values
min
typ
max
--1.7
0.16
---
0.2
0.38
--
Ω
ton
toff
---
60
90
100
150
µs
dV /dton
--
2
4
V/µs
-dV/dtoff
--
2
4
V/µs
VIN
VIN(T+)
-3.0
--
---
Vbb
3.0
V
V
VIN(T-)
1.82
--
--
V
-20
0.1
--
---
V
µA
--
--
110
µA
1.5
2.8
3.5
kΩ
at Tj = 25 °C, Vbb = 24V unless otherwise specified
Load Switching Capabilities and Characteristics
On-state resistance (pin 4 to 1)
IL = 1.0 A, Vin = high
Tj = 25°C
Tj = 125°C
5)
Nominal load current (pin 4 to 1)
ISO Standard: VON = Vbb - VOUT = 0.5 V
TS = 85 °C
Turn-on time
to 90% VOUT
Turn-off time
to 10% VOUT
RL = 24 Ω
Slew rate on
10 to 30% VOUT, RL = 24 Ω
Slew rate off
70 to 40% VOUT, RL = 24 Ω
Input
Allowable input voltage range, (pin 3 to 2)
Input turn-on threshold voltage
Vbb = 18...30V
Tj = -25...+125°C
Input turn-off threshold voltage
Vbb = 18...30V
Tj = -25...+125°C
Input threshold hysteresis
Off state input current (pin 3)
VIN(off) = 1.82 V
Tj = -25...+125°C
On state input current (pin 3) VIN(on) = 3.0 V to Vbb
Tj = -25...+125°C
Input resistance
Tj = -25...+125°C
5) I
RON
IL(ISO)
∆VIN(T)
IIN(off)
IIN(on)
RIN
Unit
L(ISO) characterizes the MOSFET part of the device and may be higher than the shortcircuit IL(SC) current of the whole device
Semiconductor Group
2
A
BSP 550
Parameter and Conditions
Symbol
at Tj = 25 °C, Vbb = 24V unless otherwise specified
Operating Parameters
Operating voltage
Undervoltage shutdown
Undervoltage restart
Undervoltage hysteresis
Tj =-25...+125°C
Tj =-25...+125°C
Tj =-25...+125°C:
Vbb(on)
Vbb(under)
Vbb(u rst)
∆Vbb(under
Values
min
typ
12
7
---
--0.4
Ibb(off)
--
10
IGND
--
IL(off)
Unit
max
40
10.5
11
--
V
V
V
V
µA
1
25
50
1.6
mA
--
--
2
µA
2.5
--72
4.0
4.8
---
A
Vbb(AZ)
VON(CL)
1.4
1.4
48
--
Tjt
∆Tjt
EAS
135
---
150
10
--
--0.3
°C
K
J
---
30
1
1.2
V
A
V
)
Standby current (pin 4), Vin = low Tj =-25...+100°C
Tj =125°C6)
Operating current (pin 2), Vin = high
Tj =-25...+125°C
leakage current (pin 1) Vin = low Tj =-25...+125°C
Protection Functions
Current limit (pin 4 to 1)
Tj = 25°C
Tj = -25...+125°C
Overvoltage protection Ibb=4mA Tj =-25...+125°C
Output clamp (ind. load switch off)
VOUT = Vbb - VON(CL), Ibb = 4mA
Thermal overload trip temperature
Thermal hysteresis
Inductive load switch-off energy dissipation7)
Tj Start = 85 °C, single pulse, IL = 1.0 A, Vbb = 12 V
Reverse Battery
Reverse battery voltage8)
Continious reverse drain current
Drain-Source diode voltage
IF = 1 A, Vin = low
TA = 25°C
IL(SC)
-Vbb
-IS
-VON
---
VOUT>Vbb
6) increase of standby current at T = 125°C caused by temperature sense current
j
7) while demagnetizing load inductance, dissipated energy is E = (V
AS ∫ ON(CL) * iL(t) dt,
2
VON(CL)
1
approx. EAS= /2 * L * I * (
)
L
VON(CL)-Vbb
8) Requires 150 Ω resistor in GND connection. Reverse load current (through intrinsic drain-source diode)
is normally limited by the connected load.
Semiconductor Group
3
V
V
BSP 550
Max allowable power dissipation
Ptot = f (TA,TSP)
Ptot [W]
Current limit characteristic
IL(SC) = f (Von), (Von see testcircuit)
IL(SC) [A]
16
3 ,5
14
3
1 2 5 °C
12
2 ,5
2 5 °C
TS P
10
-2 5 °C
2
8
1 ,5
6
1
4
TA
0 ,5
2
0
0
0
25
50
75
100
125
0
5
10
15
20
25
TA, TSP[°C]
On state resistance (Vbb-pin to OUT pin)
RON = f (Tj);Vbb = 24 V;IL = 1.0 A
RON [Ω]
Von [V]
Typ. input current
IIN = f(VIN); Vbb = 24 V
IIN [µA]
0.4
90
0.35
80
-25°C
70
25°C
0.3
60
0.25
125°C
98%
50
0.2
40
0.15
30
0.1
20
0.05
10
0
0
-50
-25
0
25
50
75
100
125
0
Tj [°C]
Semiconductor Group
4
5
10
15
20
25
VIN [V]
BSP 550
Typ. operating current
IGND = f (Tj), Vbb=30V, VIN=high
IGND [mA]
Typ. overload current
IL(lim) = f (t), Vbb=24V, no heatsink, Param.:Tjstart
IL(lim) [A]
3
1
2.5
0.8
2
0.6
-25°C
125°C
1.5
0.4
1
0.2
0.5
0
-25
0
-2
0
2
4
6
8
10 12 14 16 18
t [ms]
0
25
50
75
100
125
Tj [°C]
Typ. standby current
Ibb(off) = f(Tj); Vbb = 30 V, VIN = low
Short circuit current
IL(SC) = f (Tj);Vbb = 30 V;
IL(SC) [Α]
Ibb(off) [µA]
7
3
6
2,5
5
2
4
1,5
3
1
2
0,5
0
-25
1
0
0
25
50
75
100
-25
125
Tj [°C]
Semiconductor Group
5
0
25
50
75
100
125
150
Tj [°C]
BSP 550
Typ. input turn on voltage threshold
VIN(T+) = f (Tj)
VIN(T+) [V]
Test circuit
3
18V
2.5
30V
2
1.5
1
0.5
0
-25
0
25
50
75
100
125
Tj [°C]
Typ. on-state resistance (Vbb-Pin to OUT-Pin)
RON = f (Vbb); IL = 1.0A, Tj = 25 °C;
RON [mΩ]
160
140
120
100
80
60
40
20
0
0
5
10
15
20
25
30
35
40
45
Vbb [V]
Semiconductor Group
6
BSP 550
Package:
all dimensions in mm.
SOT 223/4:
Semiconductor Group
7