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STPSC10H12
1200 V power Schottky silicon carbide diode
Datasheet - production data
A
Description
K
The SiC diode, available in TO-220AC, is an
ultrahigh performance power Schottky rectifier. It
is manufactured using a silicon carbide substrate.
The wide band-gap material allows the design of
a low VF Schottky diode structure with a 1200 V
rating. Due to the Schottky construction, no
recovery is shown at turn-off and ringing patterns
are negligible. The minimal capacitive turn-off
behavior is independent of temperature.
Especially suited for use in PFC and secondary
side applications, this ST SiC diode will boost the
performance in hard switching conditions. This
rectifier will enhance the performance of the
targeted application. Its high forward surge
capability ensures a good robustness during
transient phases.
K
A
K
TO-220AC
Features



No or negligible reverse recovery
Switching behavior independent of
temperature
Robust high voltage periphery
May 2016
Table 1: Device summary
DocID029139 Rev 1
This is information on a product in full production.
Symbol
Value
IF(AV)
10 A
VRRM
1200 V
Tj (max)
175 °C
VF (typ)
1.35 V
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Characteristics
1
STPSC10H12
Characteristics
Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
1200
V
25
A
VRRM
Repetitive peak reverse voltage (Tj = -40 °C to +175 °C)
IF(RMS)
Forward rms current
IF(AV)
Average forward current
TC = 155 °C, DC current
10
A
IFRM
Repetitive peak forward
current
TC = 155 °C, Tj = 175 °C, δ = 0.1
38
A
IFSM
Surge non repetitive
forward current
tp = 10 ms sinusoidal
tp = 10 µs square
Tstg
Tj
TC = 25 °C
71
TC = 150 °C
60
TC = 25 °C
420
A
Storage temperature range
-65 to + 175
°C
Operating junction temperature range
-40 to + 175
°C
Table 3: Thermal parameters
Symbol
Rth(j-c)
Parameter
Junction to case
Typ.
Max.
Unit
0.65
0.9
°C/W
Table 4: Static electrical characteristics
Symbol
Parameter
Test conditions
IR(1)
Reverse leakage current
VF(2)
Forward voltage drop
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Min.
Typ.
Max.
-
5
60
-
30
400
-
1.35
1.50
-
1.75
2.25
VR = VRRM
IF = 10 A
Unit
µA
V
Notes:
(1)Pulse
test: tp = 10 ms, δ < 2%
(2)Pulse
test: tp = 500 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 1.03 x IF(AV) + 0.122 IF2(RMS)
Table 5: Dynamic electrical characteristics
Symbol
Parameter
QCj(1)
Total capacitive charge
Cj
Total capacitance
Test conditions
Min.
Typ.
Max.
Unit
VR =800 V
-
57
-
nC
VR = 0 V, Tc = 25 °C, F = 1 MHz
-
725
-
VR = 300 V, Tc = 25 °C, F = 1 MHz
-
60
-
Notes:
(1)Most
2/8

accurate value for the capacitive charge:  = ∫0   ( ) • 
DocID029139 Rev 1
pF
STPSC10H12
1.1
Characteristics
Characteristics (curves)
Figure 1: Forward voltage drop versus forward
current ( typical values)
Figure 2: Reverse leakage current versus reverse
voltage applied ( typical values)
IR(µA)
IF(A)
20
1.E+02
Pulse test : tp = 500 µs
1.E+01
15
Tj = 150 °C
1.E+00
Ta = 25 °C
10
Tj = 25 °C
1.E-01
5
Ta = 150 °C
1.E-02
VF(V)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
1.E-03
0
Figure 3: Peak forward current versus case
temperature
VR(V)
100 200 300 400 500 600 700 800 900 1000 1100 1200
Figure 4: Junction capacitance versus reverse
voltage applied ( typical values)
IM(A)
Cj(pF)
100
700
F = 1 MHz
Vosc= 30 mVRMS
T
δ = 0.1
600
80
δ = tp /T
Tj = 25 °C
tp
500
60
400
δ = 0.3
40
300
δ = 0.5
200
20
δ=1
100
TC(°C)
δ = 0.7
0
VR(V)
0
0
25
50
75
100
125
150
175
0.1
1.0
10.0
100.0
1000.0
10000.0
Figure 6: Non- repetitive peak surge forward
current versus pulse duration ( sinusoidal
waveform )
Figure 5: Relative variation of thermal impedance
junction to case versus pulse duration
Zth(j-c) / Rth(j-c)
IFSM(A)
1.0
1.E+03
0.9
0.8
Ta = 25 °C
0.7
Ta = 150 °C
0.6
0.5
1.E+02
0.4
0.3
0.2
Single pulse
0.1
tp(s)
0.0
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
tp(s)
1.E+01
1.E-05
DocID029139 Rev 1
1.E-04
1.E-03
1.E-02
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Characteristics
STPSC10H12
Figure 7: Total capacitive charges versus reverse
voltage applied ( typical values)
QCj(nC)
60
50
40
30
20
10
VR(V)
0
0
4/8
100
200
300
400
DocID029139 Rev 1
500
600
700
800
STPSC10H12
2
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.



2.1
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 0.4 to 0.6 N•m
TO-220AC rectifier package information
Figure 8: TO-220AC package outline
DocID029139 Rev 1
5/8
Package information
STPSC10H12
Table 6: TO-220AC package mechanical data
Dimensions
Ref.
Millimeters
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.066
G
4.95
5.15
0.194
0.202
H2
10.00
10.40
0.393
0.409
L2
16.40 typ.
0.645 typ.
L4
13.00
14.00
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.259
L9
3.50
3.93
0.137
0.154
M
Diam
6/8
Inches
2.6 typ.
3.75
0.102 typ.
3.85
DocID029139 Rev 1
0.147
0.151
STPSC10H12
3
Ordering information
Ordering information
Table 7: Ordering information
4
Order code
Marking
Package
Weight
Base qty
Delivery mode
STPSC10H12D
STPSC10H12D
TO-220AC
1.86 g
50
Tube
Revision history
Table 8: Document revision history
Date
Revision
03-May-2016
1
Changes
First issue
DocID029139 Rev 1
7/8
STPSC10H12
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DocID029139 Rev 1
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