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SCTW100N65G2AG
Automotive silicon carbide Power MOSFET 650 V, 100 A, 22 mΩ
(typ., TJ=150 °C), in an HiP247™ package
Datasheet - preliminary data
Features





Designed for automotive applications
Tight variation of on-resistance vs.
temperature
Very fast and robust intrinsic body diode
Very high operating temperature capability
(TJ = 200 °C)
Low capacitance
3
2
Applications
1


HiP247
Figure 1: Internal schematic diagram
Traction for inverters
DC-DC converters
Description
This silicon carbide Power MOSFET device has
been developed using ST’s advanced and
innovative 2nd generation SiC MOSFET
technology. The main features of this product
include remarkably low on-resistance per unit
area and very good switching performance. The
variation of both RDS(on) and switching losses are
almost independent from junction temperature.
Table 1: Device summary
Order code
Marking
Package
Packaging
SCTW100N65G2AG
SCT100N65G2AG
HiP247™
Tube
The device meets ECOPACK standards, an environmentally-friendly grade of products
commonly referred to as “halogen-free”. See Section 5: "Package information".
May 2016
DocID029319 Rev 1
This is preliminary information on a new product now in development
or undergoing evaluation. Details are subject to change without notice.
1/9
www.st.com
Contents
SCTW100N65G2AG
Contents
1
Electrical ratings ............................................................................. 3
2
Electrical characteristics ................................................................ 4
3
Package information ....................................................................... 6
3.1
4
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HiP247™ package information.......................................................... 6
Revision history .............................................................................. 8
DocID029319 Rev 1
SCTW100N65G2AG
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
VDS
VGS
Parameter
Value
Unit
Drain-source voltage
650
V
Gate-source voltage
-10 to 22
Gate-source voltage (recommended operating values)
-5 to 20
V
Drain current (continuous) at TC = 25 °C
100
Drain current (continuous) at TC = 100 °C
85
IDM(1)
Drain current (pulsed)
200
A
PTOT
Total dissipation at TC = 25 °C
390
W
Tstg
Storage temperature range
ID
Tj
Operating junction temperature range
-55 to 200
A
°C
°C
Notes:
(1)Pulse
width limited by safe operating area.
Table 3: Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case max
Rthj-amb
Thermal resistance junction-ambient max
DocID029319 Rev 1
Value
Unit
0.45
°C/W
50
°C/W
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Electrical characteristics
2
SCTW100N65G2AG
Electrical characteristics
(TCASE = 25 °C unless otherwise specified).
Table 4: On/off states
Symbol
V(BR)DSS
Parameter
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
Typ.
Max.
650
50
100
Gate-body leakage
current
VDS = 0 V,
VGS = -10 to 22 V
500
Gate threshold voltage
VDS = VGS, ID = 1 mA
IGSS
Static drain-source
on-resistance
1.9
Unit
V
VDS = 650 V, VGS = 0 V,
TJ = 150 °C (1)
Zero gate voltage
drain current
RDS(on)
Min.
VDS = 650 V, VGS = 0 V
IDSS
VGS(th)
Test conditions
3.2
VGS = 20 V, ID = 50 A
20
VGS = 20 V, ID = 50 A,
TJ = 150 °C
22
VGS = 20 V, ID = 50 A,
TJ = 200 °C
23
µA
nA
V
mΩ
Notes:
(1)Defined
by design, not subject to production test.
Table 5: Dynamic
Symbol
Ciss
Parameter
Test conditions
Min.
Typ.
Max.
Unit
-
3600
-
pF
-
305
-
pF
-
78
-
pF
-
215
-
nC
-
32
-
nC
-
60
-
nC
-
1.5
-
Ω
Min.
Typ.
Max.
Unit
-
300
-
µJ
-
250
-
µJ
Input capacitance
VDS = 400 V, f = 1 MHz,
VGS = 0 V
Coss
Output capacitance
Crss
Reverse transfer capacitance
Qg
Total gate charge
VDD = 400 V, ID = 50 A,
VGS = 0 to 20 V
Qgs
Gate-source charge
Qgd
Gate-drain charge
Rg
Gate input resistance
f=1 MHz, ID = 0 A
Table 6: Switching energy (inductive load)
Symbol
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Parameter
Test conditions
Eon
Turn-on switching energy
Eoff
Turn-off switching energy
VDD = 400 V, ID = 50 A
RG= 2.2 Ω, VGS = -5 to 20 V
DocID029319 Rev 1
SCTW100N65G2AG
Electrical characteristics
Table 7: Reverse diode characteristics
Symbol
Parameter
Test conditions
VSD
Diode forward voltage
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
IF = 30 A, VGS = 0 V
ISD = 50 A, di/dt = 4000 A/µs
VDD = 400 V, VGS = -5 V
DocID029319 Rev 1
Min
Typ.
Max
Unit
-
3.5
-
V
-
28
-
795
-
nC
-
44
-
A
ns
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Package information
3
SCTW100N65G2AG
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
3.1
HiP247™ package information
Figure 2: HiP247™ package outline
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DocID029319 Rev 1
SCTW100N65G2AG
Package information
Table 8: HiP247™ package mechanical data
mm.
Dim.
Min.
Typ.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
L2
5.45
5.60
18.50
ØP
3.55
ØR
4.50
S
5.30
DocID029319 Rev 1
3.65
5.50
5.50
5.70
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Revision history
4
SCTW100N65G2AG
Revision history
Table 9: Document revision history
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Date
Revision
09-May-2016
1
DocID029319 Rev 1
Changes
First release
SCTW100N65G2AG
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