74LVCE1G00

74LVCE1G00
SINGLE 2 INPUT POSITIVE NAND GATE
Description
Pin Assignments
(Top View)
The 74LVCE1G00 is a single 2-input positive NAND gate
with a standard totem pole output. The device is designed
for operation with a power supply range of 1.4V to 5.5V.
A
1
B
2
5
Vcc
4
Y
The inputs are tolerant to 5.5V allowing this device to be
used in a mixed voltage environment. The device is fully
NEW PRODUCT
specified for partial power down applications using IOFF. The
GND 3
IOFF circuitry disables the output preventing damaging
current backflow when the device is powered down.
SOT25 / SOT353
The gate performs the positive Boolean function:
Y = A •B
or
Y = A+B
(Top View)
A
1
6
Vcc
B
2
5
NC
GND
3
4
Y
Features
•
Extended Supply Voltage Range from 1.4 to 5.5V
•
Switching speed characterized for operation at 1.5V
•
Offers 30% speed improvement over LVC at 1.8V.
DFN1410 (Note 2)
•
± 24mA Output Drive at 3.3V
•
CMOS low power consumption
•
IOFF Supports Partial-Power-Down Mode Operation
•
Inputs accept up to 5.5V
•
ESD Protection Tested per JESD 22
Applications
Exceeds 200-V Machine Model (A115-A)
•
Exceeds 2000-V Human Body Model (A114-A)
•
General Purpose Logic
•
Latch-Up Exceeds 100mA per JESD 78, Class II
•
Wide array of products such as.
•
Range of Package Options
o
PCs, networking, notebooks, netbooks, PDAs
•
Direct Interface with TTL Levels
o
Computer peripherals, hard drives, CD/DVD ROM
•
SOT25, SOT353, and DFN1410: Assembled with “Green”
o
TV, DVD, DVR, set top box
Molding Compound (no Br, Sb)
o
Cell Phones, Personal Navigation / GPS
Lead Free Finish/ RoHS Compliant (Note 1)
o
MP3 players ,Cameras, Video Recorders
•
Notes:
Voltage Level Shifting
1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied. Please visit our website at
http://www.diodes.com/products/lead_free.html.
2. Pin 2 and pin 5 of the DFN1410 package are internally connected.
74LVCE1G00
Document number: DS32210 Rev. 2 - 2
1 of 14
www.diodes.com
December 2010
© Diodes Incorporated
74LVCE1G00
SINGLE 2 INPUT POSITIVE NAND GATE
Pin Descriptions
Pin Name
A
Data Input
B
Data Input
GND
Ground
Y
Data Output
Vcc
NEW PRODUCT
Description
Supply Voltage
Logic Diagram
A
B
1
4
Y
2
Function Table
Inputs
Output
A
B
Y
H
L
X
H
X
L
L
H
H
74LVCE1G00
Document number: DS32210 Rev. 2 - 2
2 of 14
www.diodes.com
December 2010
© Diodes Incorporated
74LVCE1G00
SINGLE 2 INPUT POSITIVE NAND GATE
Absolute Maximum Ratings (Note 3)
Symbol
Description
Rating
Unit
2
KV
200
V
Supply Voltage Range
-0.5 to 6.5
V
VI
Input Voltage Range
-0.5 to 6.5
V
Vo
Voltage applied to output in high impedance or IOFF state
-0.5 to 6.5
V
Vo
Voltage applied to output in high or low state
-0.3 to VCC +0.5
V
IIK
Input Clamp Current VI<0
-50
mA
IOK
Output Clamp Current
-50
mA
IO
Continuous output current
±50
mA
Continuous current through Vdd or GND
±100
mA
Operating Junction Temperature
-40 to 150
°C
Storage Temperature
-65 to 150
°C
ESD HBM
Human Body Model ESD Protection
ESD MM
Machine Model ESD Protection
NEW PRODUCT
VCC
TJ
TSTG
Note:
3. Stresses beyond the absolute maximum may result in immediate failure or reduced reliability. These are stress values and device
operation should be within recommend values.
74LVCE1G00
Document number: DS32210 Rev. 2 - 2
3 of 14
www.diodes.com
December 2010
© Diodes Incorporated
74LVCE1G00
SINGLE 2 INPUT POSITIVE NAND GATE
Recommended Operating Conditions (Note 4)
Symbol
VCC
NEW PRODUCT
VIH
VIL
VI
VO
IOH
IOL
Parameter
Operating
Operating Voltage
Data retention only
VCC = 1.4 V to 1.95 V
VCC = 2.3 V to 2.7 V
High-level Input Voltage
VCC = 3 V to 3.6 V
VCC = 4.5 V to 5.5 V
VCC = 1.4 V to 1.95 V
VCC = 2.3 V to 2.7 V
Low-level input voltage
VCC = 3 V to 3.6 V
VCC = 4.5 V to 5.5 V
Input Voltage
Output Voltage
Vcc=1.4 V
VCC = 1.65 V
VCC = 2.3 V
High-level output current
VCC = 3 V
Low-level output current
Min
1.4
1.2
0.65 X VCC
1.7
2
0.7 X VCC
0
0
VCC = 4.5 V
Vcc=1.4 V
VCC = 1.65 V
VCC = 2.3 V
VCC = 3 V
VCC = 4.5 V
VCC = 1.4 to 3V
Δt/ΔV
TA
Note:
Input transition rise or fall
VCC = 3.3 V ± 0.3 V
rate
VCC = 5 V ± 0.5 V
Operating free-air
temperature
Max
5.5
Unit
V
V
V
0.35 X VCC
0.7
0.8
0.3 X VCC
5.5
VCC
-3
-4
-8
-16
-24
-32
3
4
8
16
24
32
V
V
V
mA
mA
20
-40
10
5
ns/V
85
ºC
4. Unused inputs should be held at Vcc or Ground.
74LVCE1G00
Document number: DS32210 Rev. 2 - 2
4 of 14
www.diodes.com
December 2010
© Diodes Incorporated
74LVCE1G00
SINGLE 2 INPUT POSITIVE NAND GATE
Electrical Characteristics (All typical values are at Vcc = 3.3V, TA = 25°C)
Over recommended free-air temperature range (unless otherwise noted)
NEW PRODUCT
Symbol
VOH
VOL
II
IOFF
ICC
ΔICC
Ci
θJA
θJC
Note:
Parameter
Test Conditions
IOH = -100μA
IOH = -3mA
IOH = -4mA
High Level Output
IOH = -8mA
Voltage
IOH = -16mA
IOH = -24mA
IOH = -32mA
IOL = 100μA
IOL = 3mA
IOL = 4mA
High-level Input Voltage IOL = 8mA
IOL = 16mA
IOL = 24mA
IOL = 32mA
Input Current
VI = 5.5 V or GND
Power Down Leakage
VI or VO = 5.5V
Current
VI = 5.5V of GND
Supply Current
IO=0
One input at VCC –
Additional Supply
0.6 V Other inputs
Current
at VCC or GND
Input Capacitance
Vi = VCC – or GND
SOT25
Thermal Resistance
SOT353
Junction-to-Ambient
DFN1410
SOT25
Thermal Resistance
SOT353
Junction-to-Case
DFN1410
Vcc
Min
1.4 V to 5.5V
1.4 V
1.65 V
2.3V
VCC – 0.1
1.05
1.2
1.9
2.4
2.3
3.8
3V
4.5 V
1.4 V to 5.5V
1.4 V
1.65 V
2.3V
Typ.
Max
Unit
V
4.5
0 to 5.5 V
0.1
.4
0.45
0.3
0.4
0.55
0.55
±5
μA
0
± 10
μA
1.4 V to 5.5V
10
μA
3 V to 5.5V
500
μA
3V
3.3
(Note 5)
(Note 5)
(Note 5)
(Note 5)
(Note 5)
(Note 5)
3.5
204
371
430
52
143
190
V
pF
o
C/W
o
C/W
5. Test condition for SOT25, SOT353, and DFN1410: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum
recommended pad layout.
74LVCE1G00
Document number: DS32210 Rev. 2 - 2
5 of 14
www.diodes.com
December 2010
© Diodes Incorporated
74LVCE1G00
SINGLE 2 INPUT POSITIVE NAND GATE
Switching Characteristics
Over recommended free-air temperature range, CL = 15pF (see Figure 1)
Vcc = 1.5 V Vcc = 1.8 V Vcc = 2.5 V
From
TO
± 0.1V
± 0.15V
± 0.2V
Parameter
(Input) (OUTPUT)
Min Max Min Max Min Max
NEW PRODUCT
tpd
A or B
Y
2.2
7.2
1.5
5
0.6
3.5
Vcc = 3.3 V
± 0.3V
Min Max
0.6
3.1
Over recommended free-air temperature range, CL = 30 or 50pF as noted (see Figure 2)
Vcc = 1.5 V Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V
From
TO
± 0.1V
± 0.15V
± 0.2V
± 0.3V
Parameter
(Input) (OUTPUT)
Min Max Min Max Min Max Min Max
tpd
A or B
Y
3.1
9
2.1
6.3
1
4.4
0.8
3.8
Vcc = 5 V
± 0.5V
Min Max
0.7
3
Vcc = 5 V
± 0.5V
Min Max
0.9
3.6
Unit
ns
Unit
ns
Operating Characteristics
TA = 25 ºC
Parameter
Cpd
Power
dissipation
capacitance
Test
Conditions
f = 10 MHz
74LVCE1G00
Document number: DS32210 Rev. 2 - 2
Vcc = 1.5 V Vcc = 1.8 V Vcc = 2.5 V
Vcc = 3.3 V
Vcc = 5 V
TYP
TYP
TYP
TYP
TYP
22
22
22
23
25
6 of 14
www.diodes.com
Unit
pF
December 2010
© Diodes Incorporated
74LVCE1G00
SINGLE 2 INPUT POSITIVE NAND GATE
NEW PRODUCT
Parameter Measurement Information
Vcc
1.5V±0.10V
1.8V±0.15V
2.5V±0.2V
3.3V±0.3V
5V±0.5V
Inputs
VI
tr/tf
VCC
VCC
VCC
3V
VCC
≤2ns
≤2ns
≤2ns
≤2.5ns
≤2.5ns
VM
CL
RL
VCC/2
VCC/2
VCC/2
1.5V
VCC/2
15pF
15pF
15pF
15pF
15pF
1MΩ
1MΩ
1MΩ
1MΩ
1MΩ
Voltage Waveform
Pulse Duration
Voltage Waveform
Propagation Delay Times
Inverting and Non Inverting Outputs
Notes:
A. Includes test lead and test apparatus capacitance.
B. All pulses are supplied at pulse repetition rate ≤ 10 MHz.
C. Inputs are measured separately one transition per measurement.
D. tPLH and tPHL are the same as tPD.
Figure 1. Load Circuit and Voltage Waveforms
74LVCE1G00
Document number: DS32210 Rev. 2 - 2
7 of 14
www.diodes.com
December 2010
© Diodes Incorporated
74LVCE1G00
SINGLE 2 INPUT POSITIVE NAND GATE
NEW PRODUCT
Parameter Measurement Information (Continued)
Inputs
Vcc
1.5V±0.10V
1.8V±0.15V
2.5V±0.2V
3.3V±0.3V
5V±0.5V
VI
VCC
VCC
VCC
3V
VCC
tr/tf
≤2ns
≤2ns
≤2ns
≤2.5ns
≤2.5ns
VM
CL
RL
VCC/2
VCC/2
VCC/2
1.5V
VCC/2
30pF
30pF
30pF
50pF
50pF
1KΩ
1KΩ
500Ω
500Ω
500Ω
Voltage Waveform
Pulse Duration
Voltage Waveform
Propagation Delay Times
Inverting and Non Inverting Outputs
Notes:
A. Includes test lead and test apparatus capacitance.
B. All pulses are supplied at pulse repetition rate ≤ 10 MHz.
C. Inputs are measured separately one transition per measurement.
D. tPLH and tPHL are the same as tPD.
Figure 2. Load Circuit and Voltage Waveforms
74LVCE1G00
Document number: DS32210 Rev. 2 - 2
8 of 14
www.diodes.com
December 2010
© Diodes Incorporated
74LVCE1G00
SINGLE 2 INPUT POSITIVE NAND GATE
NEW PRODUCT
Ordering Information
Device
74LVCE1G00W5-7
74LVCE1G00SE-7
74LVCE1G00FZ4-7
Note:
Package
Code
W6
SE
FZ4
Packaging
(Note 5)
SOT25
SOT353
DFN1410
7” Tape and Reel
Quantity
Part Number Suffix
3000/Tape & Reel
-7
3000/Tape & Reel
-7
5000/Tape & Reel
-7
6. Pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
74LVCE1G00
Document number: DS32210 Rev. 2 - 2
9 of 14
www.diodes.com
December 2010
© Diodes Incorporated
74LVCE1G00
SINGLE 2 INPUT POSITIVE NAND GATE
Marking Information
(1) SOT25 and SOT353
(Top View)
4
7
5
XX : Identification code
Y : Year 0~9
W : Week : A~Z : 1~26 week;
a~z : 27~52 week; z represents
52 and 53 week
X : A~Z : Internal code
NEW PRODUCT
XX Y W X
1
2
3
Part Number
74LVCE1G00W5
74LVCE1G00SE
Package
SOT25
SOT353
Identification Code
PS
PS
(3) DFN1410
(Top View)
XX
YWX
Part Number
74LVCE1G00FZ4
74LVCE1G00
Document number: DS32210 Rev. 2 - 2
XX : Identification Code
Y : Year : 0~9
W : Week : A~Z : 1~26 week;
a~z : 27~52 week; z represents
52 and 53 week
X : A~Z : Internal code
Package
DFN1410
10 of 14
www.diodes.com
Identification Code
PS
December 2010
© Diodes Incorporated
74LVCE1G00
SINGLE 2 INPUT POSITIVE NAND GATE
Package Outline Dimensions (All Dimensions in mm)
NEW PRODUCT
(1) Package Type: SOT25
(2) Package Type: SOT353
6x-0.42
CL
0.10/0.30
C
L
0.40/0.45
0.65Bsc.
0.25/0.40
C
L
1.8/2.2
74LVCE1G00
Document number: DS32210 Rev. 2 - 2
0.1/0.22
Detail"A"
0.9/1.0
0/0.1
1.10Max.
Gauge Plane
Land Pattern Recommendation
(unit:mm) Top View
0.25
PIN 1
0°/8
°
C
L
6x-0.60
2x-0.65
1.15/1.35
2.0/2.2
C
L
1.9
1.3
"A"
11 of 14
www.diodes.com
December 2010
© Diodes Incorporated
74LVCE1G00
SINGLE 2 INPUT POSITIVE NAND GATE
Package Outline Dimensions (Continued)
C
Side View
1.35/1.45
0.550
2X-
6x-0.25
6x-0.35
Seating Plane
0.25 A
NEW PRODUCT
0.08 C
0.13Typ.
0.40Max.
0.10 C
6x-
0/0.05
(3) Package Type: DFN1410
A
0.50Typ.
2X-
(Pin #1 ID)
X
45¢
. 1x
C0
0.075¡ 0Ó.030
6x-0.25/0.35
0.95/1.05
B
4x-0.50Typ.
Land Pattern Recommendation
(mm)
Top View
0.25 B
0.10(4x)
6x-0.15/0.25
0.10
C A B
Bottom View
74LVCE1G00
Document number: DS32210 Rev. 2 - 2
12 of 14
www.diodes.com
December 2010
© Diodes Incorporated
74LVCE1G00
SINGLE 2 INPUT POSITIVE NAND GATE
Taping Orientation (Note 7)
NEW PRODUCT
For DFN1410
Note:
7. The taping orientation of the other package type can be found on our website at http://www.diodes.com/datasheets/ap02007.pdf
74LVCE1G00
Document number: DS32210 Rev. 2 - 2
13 of 14
www.diodes.com
December 2010
© Diodes Incorporated
74LVCE1G00
SINGLE 2 INPUT POSITIVE NAND GATE
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS
DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
NEW PRODUCT
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other
changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability
arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any
license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described
herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies
whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized
sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall
indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names
and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without
the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided
in the labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or
systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements
concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems,
notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further,
Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes
Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
www.diodes.com
74LVCE1G00
Document number: DS32210 Rev. 2 - 2
14 of 14
www.diodes.com
December 2010
© Diodes Incorporated
Similar pages