BTS5215L Data Sheet (257 KB, EN)

Smart High-Side Power Switch
BTS5215L
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Data Sheet
1
V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5215L
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control and protection circuit
equivalent to
channel 1
287
Data Sheet
2
V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5215L
Pin Definitions and Functions
Pin
1
2
4
3
5
6,12,
heat
slug
7,9,11
8
10
Data Sheet
Pin configuration
Symbol Function
GND
Ground of chip
IN1
Input 1,2 activates channel 1,2 in case of logic
high signal
IN2
ST1
Diagnostic feedback 1 & 2 of channel 1,2
open drain, low on failure
ST2
Vbb
Positive power supply voltage. Design the
wiring for the simultaneous max. short circuit
currents from channel 1 to 2 and also for low
thermal resistance
NC
Not Connected
OUT2
Output 1,2 protected high-side power output
of channel 1 and 2. Design the wiring for the
OUT1
max. short circuit current
3
(top view)
GND
IN1
ST1
IN2
ST2
Vbb
1•
2
3
4
5
6
Vbb*
12
11
10
9
8
7
Vbb
NC
OUT1
NC
OUT2
NC
* heat slug
V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5215L
Parameter
Symbol
Supply voltage (overvoltage protection see page 6)
Supply voltage for full short circuit protection
Tj,start = -40 ...+150°C
Load current (Short-circuit current, see page 6)
Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V
RI2) = 2 Ω, td = 400 ms; IN = low or high,
each channel loaded with RL = 13.5 Ω,
Operating temperature range
Storage temperature range
Power dissipation (DC)4)
Ta = 25°C:
(all channels active)
Ta = 85°C:
Maximal switchable inductance, single pulse
Vbb = 12V, Tj,start = 150°C4), see diagrams on page 10
IL = 3.5 A, EAS = 178 mJ, 0 Ω
one channel:
IL = 7.0 A, EAS = 337 mJ, 0 Ω
two parallel channels:
Electrostatic discharge capability (ESD)
IN:
(Human Body Model)
ST:
out to all other pins shorted:
Vbb
Vbb
Values
Unit
43
36
V
V
IL
VLoad dump3)
self-limited
60
A
V
Tj
Tstg
Ptot
-40 ...+150
-55 ...+150
3.1
1.6
°C
21.3
10
mH
1.0
4.0
8.0
kV
-10 ... +16
±0.3
±5.0
±5.0
V
mA
ZL
VESD
W
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
R=1.5kΩ; C=100pF
Input voltage (DC) see internal circuit diagram page 9
Current through input pin (DC)
Pulsed current through input pin5)
Current through status pin (DC)
1)
2)
3)
4)
5)
VIN
IIN
IINp
IST
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω
resistor for the GND connection is recommended.
RI = internal resistance of the load dump test pulse generator
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 14
only for testing
Data Sheet
4
V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5215L
Parameter and Conditions
Thermal resistance
junction - Case6)
junction – ambient6)
@ 6 cm2 cooling area
Symbol
each channel: RthjC
Rthja
one channel active:
all channels active:
Values
min
typ
max
Unit
5
----
K/W
Values
min
typ
max
Unit
-----
--45
40
Electrical Characteristics
Parameter and Conditions, each of the four channels
Symbol
at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified
Load Switching Capabilities and Characteristics
On-state resistance (Vbb to OUT); IL = 2 A
each channel,
Tj = 25°C: RON
Tj = 150°C:
two parallel channels, Tj = 25°C:
----
70
140
35
90
180
45
mΩ
3.7
7.4
4.7
9.5
--
A
--
--
2
mA
---
100
100
250
270
µs
0.2
0.2
---
1.0
1.1
V/µs
V/µs
see diagram, page 11
Nominal load current
one channel active: IL(NOM)
two parallel channels active:
Device on PCB6), Ta = 85°C, Tj ≤ 150°C
Output current while GND disconnected or pulled up7); IL(GNDhigh)
Vbb = 32 V, VIN = 0,
see diagram page 9
Turn-on time8)
Turn-off time
RL = 12 Ω
Slew rate on 8)
Slew rate off 8)
6)
7)
8)
IN
IN
to 90% VOUT: ton
to 10% VOUT: toff
10 to 30% VOUT, RL = 12 Ω: dV/dton
70 to 40% VOUT, RL = 12 Ω: -dV/dtoff
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 14
not subject to production test, specified by design
See timing diagram on page 12.
Data Sheet
5
V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5215L
Parameter and Conditions, each of the four channels
Symbol
at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified
Values
min
typ
max
Unit
Operating Parameters
Vbb(on)
Tj =-40°C...25°C: Vbb(u so)
Tj =125°C:
Vbb(AZ)
5.5
--41
---47
40
4.5
4.510)
52
-----
4.5
--1
10
15
1010)
5
µA
---
0.6
1.2
1.2
2.4
mA
Protection Functions14)
Current limit, Vout = 0V, (see timing diagrams, page 12)
Tj =-40°C: IL(lim)
Tj =25°C:
=+150°C:
Tj
--9
-15
--
23
A
----
Repetitive short circuit current limit,
Tj = Tjt
each channel IL(SCr)
two channels
---
12
12
---
A
--
2
--
ms
41
47
52
V
150
--
-10
---
°C
K
Operating voltage
Undervoltage switch off9)
Overvoltage protection11)
I bb = 40 mA
Standby current12)
VIN = 0; see diagram page 11
Tj =-40°C...25°C: Ibb(off)
Tj =150°C:
Tj =125°C:
Off-State output current (included in Ibb(off))
IL(off)
VIN = 0; each channel
Operating current 13), VIN = 5V,
one channel on: IGND
all channels on:
V
V
V
µA
(see timing diagrams, page 12)
Initial short circuit shutdown time
Vout = 0V
Tj,start =25°C: toff(SC)
(see timing diagrams on page 12)
VON(CL)
Output clamp (inductive load switch off)15)
at VON(CL) = Vbb - VOUT, IL= 40 mA
Tjt
∆Tjt
Thermal overload trip temperature
Thermal hysteresis
9)
10)
11)
12)
13)
14
15)
is the voltage, where the device doesn´t change it´s switching condition for 15ms after the supply voltage
falling below the lower limit of Vbb(on)
not subject to production test, specified by design
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω
resistor for the GND connection is recommended). See also VON(CL) in table of protection functions and
circuit diagram on page 9.
Measured with load; for the whole device; all channels off
Add IST, if IST > 0
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest
VON(CL)
Data Sheet
6
V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5215L
Parameter and Conditions, each of the four channels
Symbol
at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified
Reverse Battery
Reverse battery voltage 16)
Drain-source diode voltage (Vout > Vbb)
IL = - 2.0 A, Tj = +150°C
-Vbb
-VON
Values
min
typ
max
Unit
---
-600
32
--
V
mV
Diagnostic Characteristics
Open load detection voltage
V OUT(OL)
1.7
2.8
4.0
V
Input and Status Feedback17)
Input resistance
RI
2.5
4.0
6.0
kΩ
VIN(T+)
VIN(T-)
∆ VIN(T)
td(STon)
-1.0
---
--0.2
10
2.5
--20
V
V
V
—s
td(STon)
30
--
--
—s
td(SToff)
--
--
500
—s
td(SToff)
--
--
20
—s
IIN(off)
IIN(on)
5
10
-35
20
60
µA
µA
VST(high)
VST(low)
5.4
--
---
-0.6
V
1
(see circuit page 9)
Input turn-on threshold voltage
Input turn-off threshold voltage
Input threshold hysteresis
Status change after positive input slope18)
with open load
Status change after positive input slope18)
with overload
Status change after negative input slope
with open load
Status change after negative input slope18)
with overtemperature
Off state input current
VIN = 0.4 V:
On state input current
VIN = 5 V:
Status output (open drain)
Zener limit voltage
IST = +1.6 mA:
IST = +1.6 mA:
ST low voltage
16)
Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Power dissipation is higher compared to normal operating
conditions due to the voltage drop across the drain-source diode. The temperature protection is not active
during reverse current operation! Input and Status currents have to be limited (see max. ratings page 4 and
circuit page 9).
17) If ground resistors R
GND are used, add the voltage drop across these resistors.
18) not subject to production test, specified by design
Data Sheet
7
V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5215L
Truth Table
( each channel )
Normal operation
Open load
Overtemperature
L = "Low" Level
H = "High" Level
IN
OUT
ST
L
H
L
H
L
H
Z
H
H
H
L
H
L
L
L19)
H
H
L
X = don't care
Z = high impedance, potential depends on external circuit
Status signal valid after the time delay shown in the timing diagrams
Parallel switching of channel 1 and 2 is easily possible by connecting the inputs and outputs in parallel (see truth
table). If switching channel 1 to 2 in parallel, the status outputs ST1 and ST2 have to be configured as a 'Wired
OR' function with a single pull-up resistor.
Terms
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Leadframe (Vbb) is connected to pin 6,12
External RGND optional; single resistor RGND = 150 Ω for reverse battery protection up to the max.
operating voltage.
19)
L, if potential at the Output exceeds the OpenLoad detection voltage
Data Sheet
8
V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5215L
Input circuit (ESD protection), IN1 or IN2
Overvolt. and reverse batt. protection
9
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The use of ESD zener diodes as voltage clamp at DC
conditions is not recommended.
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Status output, ST1 or ST2
67
Open-load detection, OUT1 or OUT2
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VZ1 = 6.1 V typ., VZ2 = 47 V typ., RGND = 150 Ω,
RST= 15 kΩ, RI= 3.5 kΩ typ.
In case of reverse battery the load current has to be
limited by the load. Temperature protection is not
active
9
5 6721
5 /RDG
OFF-state diagnostic condition:
Open Load, if VOUT > 3 V typ.; IN low
ESD-Zener diode: 6.1 V typ., max 0.3 mA; RST(ON) < 375 Ω
at 1.6 mA. The use of ESD zener diodes as voltage clamp at
DC conditions is not recommended.
9
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OUT1 or OUT2
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GND disconnect
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Any kind of load. In case of IN = high is VOUT ≈ VIN - VIN(T+).
Due to VGND > 0, no VST = low signal available.
Data Sheet
9
V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5215L
GND disconnect with GND pull up
Inductive load switch-off energy
dissipation
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Vbb disconnect with energized inductive
load
,1
*1'
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Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND > 0, no VST = low signal available.
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Energy stored in load inductance:
2
EL = 1/2·L·I L
While demagnetizing load inductance, the energy
dissipated in PROFET is
EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
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(/
with an approximate solution for RL > 0 Ω:
287
EAS=
67
IL· L
(V + |VOUT(CL)|)
2·RL bb
OQ(1+ |V
IL·RL
OUT(CL)|
)
*1'
9
Maximum allowable load inductance for
a single switch off (one channel)4)
EE
For inductive load currents up to the limits defined by ZL
(max. ratings and diagram on page 10) each switch is
protected against loss of Vbb.
/ I,/Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω
ZL [mH]
Consider at your PCB layout that in the case of Vbb disconnection with energized inductive load all the load current
flows through the GND connection.
IL [A]
Data Sheet
10
V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5215L
Typ. on-state resistance
521 I9EE7M; IL = 2 A, IN = high
RON [mOhm]
7M ƒ&
ƒ&
ƒ&
Vbb [V]
Typ. standby current
,EERII I7M; Vbb = 9...34 V, IN1,2 = low
Ibb(off) [µA]
Tj [°C]
Data Sheet
11
V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5215L
Timing diagrams
All channels are symmetric and consequently the diagrams are valid for channel 1 to
channel 4
Figure 2b: Switching a lamp:
Figure 1a: Vbb turn on:
,1
,1
,1
9 EE
67
9
287
9
9
287
287
67RSHQGUDLQ
,
/
67RSHQGUDLQ
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Figure 3a: Turn on into short circuit:
shut down by overtemperature, restart by cooling
Figure 2a: Switching a resistive load,
turn-on/off time and slew rate definition:
,1
,1
9287
,
/
,
W on
G9GWRQ
G9GWRII
W
/OLP
,
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off
W
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W
Heating up of the chip may require several milliseconds, depending
on external conditions
W
Data Sheet
RWKHUFKDQQHOQRUP DORSHUDWLRQ
12
V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5215L
Figure 5a: Open load: detection in OFF-state, turn
on/off to open load
Open load of channel 1; other channels normal
operation
Figure 3b: Turn on into short circuit:
shut down by overtemperature, restart by cooling
(two parallel switched channels 1 and 2)
,1
,1
,,
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,
W
67
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67
RII6&
—V
—V
W
ST1 and ST2 have to be configured as a 'Wired OR' function
ST1/2 with a single pull-up resistor.
Figure 6a: Status change after, turn on/off to
overtemperature
Overtemperature of channel 1; other channels normal
operation
Figure 4a: Overtemperature:
Reset if Tj <Tjt
,1
,1
67
67
—V
—V
9
287
7
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Data Sheet
13
V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5215L
0.1
0.1 C 12x
Seating Plane
1
5x 1 = 5
0.4 +0.13
0.25
M
.035
8˚
C
0.7 ±0.15
(0.2)
(4.4)
CAB
10.3 ±0.3
0.25 B
4.2 ±0.1
7
1.6 ±0.1
(1.8)
5.1 ±0.1
12
7.5 ±0.1 1)
5˚ ±3˚
B
0.25 +0.075
-0
2.6 MAX.
(1.55)
2.35 ±0.1
2)
0.8
8˚
0 +0.1
6.4 ±0.1 1)
A
0.1 ±0.05 3)
Package Outlines
ø0.8 x 0.1 -0.05 Depth
4)
1
6
7.8 ±0.1
(Heatslug)
1)
Does not include
2)
Stand OFF
3)
Stand OUT
4)
plastic or metal protrusion of 0.15 max. per side
Pin 1 Index Marking; Polish finish
All package corners max. R 0.25
Figure 1
PG-DSO-12-9 (Plastic Dual Small Outline Package) (RoHS-compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Please specify the package needed (e.g. green package) when placing an order
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Products”: http://www.infineon.com/products.
Data Sheet
14
Dimensions in mm
V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5215L
Revision History
Version
V1.1
Data Sheet
Date
Changes
2007-05-29
Creation of the green datasheet.
First page :
Adding the green logo and the AEC qualified
Adding the bullet AEC qualified and the RoHS compliant features
Package page
Modification of the package to be green.
15
V1.1, 2007-05-29
Edition 2007-05-29
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 5/29/07.
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
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Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
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