NIS5135 3.6A 5V RESETTABLE ELECTRONIC FUSE Description Pin Assignments The NIS5135 is a self-protected resettable electronic fuse designed for consumer applications such as hard disk drives to industrial applications to enhance system reliability against catastrophic and shutdown failures. (Top View) To support a wide range of demanding applications, the design has been optimized to operate over the supply range of 3.1V to 18V. For robustness and protection, the device integrates a low RDS(ON) NMOS buffer power device along with an undervoltage lockout, overvoltage clamp, a current limit, a dv/dt control and a thermal shutdown circuit. The overvoltage circuit limits the output voltage without shutting the device down to allow the load to continue operating during overvoltage. Thermal shutdown can be either latching type (NIS5135MN1) or auto-retry type (NIS5135MN2). Source 1 10 GND Source 2 2 29 dv/dt Enable/Fault 4 7 ILIMIT 5 6 NC 3 Source Source U-DFN3030-10 Applications 3.1V to 18V Operating Input Voltage Integrated NMOS Power Device with RDS(ON) of 30mΩ Typical Internal Current Limit - No External Current Sense Resistor in Load Path Undervoltage Lockout Over Voltage Clamp (NIS5135MN1 and NIS5135MN2) Thermal Shutdown -40C to +150C Operating Junction Temperature ESD Ratings: HBM > 1500V; MM 200V Small Low Profile U-DFN3030-10 package Totally Lead Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Notes: 8 Source Features NIS5135MN1 NIS5135MN2 Hard Disk Drives Solid State Drives (SSD) Set-top Boxes DVDs and Blu-ray Disc Drivers Mother Board Power Management Printer Load Power Management Fan Drives 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green” and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. NIS5135 Document number: DS37968 Rev. 3 – 2 1 of 13 www.diodes.com May 2016 © Diodes Incorporated NIS5135 Typical Application Circuits +5V 11 VDD SOURCE + 10µF NIS5135 8 ENABLE ILIMIT 1 2 3 4 5 + 70µF RS Load 7 ENABLE GND dv/dt 10 9 Cdv/dt Figure 1. Application Circuit with Direct Current Sensing +5V 11 VDD SOURCE + 10µF 8 NIS5135 1 2 3 4 5 + 70µF Load RS ENABLE ILIMIT 7 ENABLE GND dv/dt 10 9 Cdv/dt Figure 2. Application Circuit with Kelvin Current Sensing Figure 3. Application Circuit with Common Thermal Shutdown NIS5135 Document number: DS37968 Rev. 3 – 2 2 of 13 www.diodes.com May 2016 © Diodes Incorporated NIS5135 Pin Descriptions Pin Number Pin Name 1 to 5 Source 6 NC 7 ILIMIT Function The internal NMOS power device’s Source pins: These pins are the Source of internal power device and also the output terminal of the electronic fuse. No internal connection to device Internal NMOS power device turn-on time adjustment pin: If this pin is left unconnected, the internal capacitor ensures the turn-on ramp is over a period of 2ms typical. If an additional delay is required, connect a capacitor from this pin to the ground. Current limit setting pin: A resistor between Source pins and this pin sets the overload and short-circuit current limit thresholds. Tri-state bi-directional interface pin: The output can be disabled by pulling this pin to ground through an open drain or an open collector. Additionally, this pin output goes to an intermediate state to indicate that the device is in thermal shutdown state. This pin can also be connected together with other NIS5135 devices to cause a system-wide simultaneous shutdown during thermal events. Internal NMOS power device turn-on time adjustment pin: If this pin is is left unconnected, the internal capacitor ensures the turn-on ramp is over a period of 2ms typical. If an additional delay is required, connect a capacitor from this pin to the ground. 8 Enable/Fault 9 dv/dt 10 GND Ground pin Exposed PAD VDD Positive input voltage to the device NIS5135 Document number: DS37968 Rev. 3 – 2 3 of 13 www.diodes.com May 2016 © Diodes Incorporated NIS5135 Functional Block Diagram VDD Enable/ Fault Charge Pump Enable Source Current Limit Thermal Shutdown UVLO Voltage Clamp ILIMIT dv/dt dv/dt Control GND Block Diagram 4.3V Startup Blanking 12µA Enable SD 2.64V + - Enable/ Fault 1.4V 0.58V SD + Thermal Reset Thermal Shutdown Thermal SD Enable/Fault Function Circuit NIS5135 Document number: DS37968 Rev. 3 – 2 4 of 13 www.diodes.com May 2016 © Diodes Incorporated NIS5135 Absolute Maximum Ratings (Note 4) (@TA = +25°C, unless otherwise specified.) Symbol VDD JA Characteristic Input Voltage in Steady State Operating Conditions (Note 5) Input Voltage - Transient (100ms) 0.1 in2 (Note 6) Junction to Air Thermal Resistance 0.5 in2 (Note 6) Value -0.6 to +18 -0.6 to +25 227 95 Unit V C/W JL Junction to Lead Thermal Resistance JC Junction to Case Thermal Resistance 20 Package Power Dissipation at TA = +25C 1.3 W PDMAX 27 — Thermal Derating Above +25C 10.4 mW/°C TS Storage Temperature Range -55 to +155 C TJ Operating Junction Temperature (Note 7) -40 to +150 C TL Lead Temperature During Soldering (10s) +260 C Notes: 4. Stresses greater than the 'Absolute Maximum Ratings' specified above may cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time. 5. Negative voltage will not damage the device provided that the power dissipation is within the package dissipation rating. 6. 1 oz copper on double sided FR-4 PCB. 7. Thermal limit is set above the maximum thermal rating. It is not recommended to operate the device at temperature above the maximum rating for extended period. Recommended Operating Conditions Symbol VDD TJ Test Condition Rating Unit Supply Voltage Characteristic Operating 3.1 to 18.0 V Operating Juntion Temperature Range Operating -40 to +150 C NIS5135 Document number: DS37968 Rev. 3 – 2 5 of 13 www.diodes.com May 2016 © Diodes Incorporated NIS5135 Electrical Characteristics (VDD = 5V, CL = 70µF, Symbol Device dv/dt pin open, RLIMIT = 10, and TA = +25°C, unless otherwise noted.) Characteristic IBIAS IBIAS_SD Max Unit — 0.8 1.5 mA Bias Current during Shutdown Device Shutdown — 0.4 — mA — — — 3.1 V Enabling of the IC to ID = 100mA (with 1A resistive load) NMOS fully on — 220 — µs 20 — 30 40 NMOS fully on, TJ = +140°C 45 — VDD = 10V, VGS = 0V, RL = ∞ — 0.05 0.2 TA = +25°C, 0.5 in.2 pad — 3.6 — TA = +80°C, min copper — 1.7 — — 230 — pF NMOS Drain to Source Kelvin ON Resistance (Note 8) Off State Output Voltage VOUT_OFF Typ Device Operational Chip Enable Dealy Time RDS(ON) Min Bias Current Minimum Operating Voltage Once VDD_MIN Successfully Started Up NMOS Power Device tDLY Test Condition mΩ V ID Continuous Current (Note 9) A — Output Capacitance VDS = 12V, VGS = 0V, f = 1MHz Output Voltage Ramp Time Device enable to VDS = 11.7V 0.7 1.4 2.4 ms — — — VDD V Turn on, Voltage rising 3.2 3.6 4.0 V — — 0.40 — V During over voltage protection, VDD = 18V 5.95 6.65 7.35 V RLIMIT = 11Ω 2.3 3.1 4.4 A — 3.5 — A +150 +175 +200 C — +45 — C dv/dt Ramp tSLEW Maximum Capacitor Voltage VC_MAX Under/Overvoltage Protection VUVLO Undervoltage Lockout Threshold VUVLO_HYST Undervoltage Lockout Hysteresis VCLAMP Overvoltage Clamp Limit (Note 10) Current Limit ILIMIT_SS Kelvin Short Circuit Current Limit (Note 11) Kelvin Over Load Current Limit RLIMIT = 11Ω (Note 11) Thermal Protection Thermal Shutdown Junction Temperature Temperature rising TSD Threshold (Note 9) Thermal Shutdown Hysteresis in Non — TSD_HYST Latching Devices Enable/Fault ILIMIT_OL VEN_LOW Enable Logic Level Low Voltage Output disabled 0.35 0.58 0.81 V VEN_MID Enable Logic Level Mid Voltage Output disabled, Thermal fault 0.82 1.4 1.95 V VEN_HI Enable Logic Level High Output enabled 1.96 2.64 3.3 V VEN_MAX High State Maximum Voltage — 3.4 4.3 5.3 V IEN_SINK Logic Low Sink Current VENABLE = 0V — -12 -20 µA — — 1.0 µA — — 3.0 Units IEN_LKG Fanout Notes: Logic High Leakage Current for External VENABLE = 3.3V Switch Maximum Fanout – Number of device that can be connected together to this pin for — simultaneous shutdown 8. Pulse test with pulse width of 300µs, duty cycle 2%. 9. This parameter is not tested in production. It is guaranteed by design, process control and characterization. 10. Overvoltage clamp feature is available on in NIS5135MN1 and NIS5135MN2 versions. 11. Refer to application note on explanation on short circuit and overload conditions. NIS5135 Document number: DS37968 Rev. 3 – 2 6 of 13 www.diodes.com May 2016 © Diodes Incorporated NIS5135 Performance Characteristics UVLO Hysteresis vs. Temperature UVLO TURN-ON (V) UVLO Turn-On Voltage vs. Temperature (C) (C) Output Clamp Voltage vs. Temperature Output Voltage dv/dt Rate vs. Temperature (C) (C) Input Transient Response NIS5135 Document number: DS37968 Rev. 3 – 2 Body Diodes Forward Characteristics 7 of 13 www.diodes.com May 2016 © Diodes Incorporated NIS5135 Performance Characteristics (Cont.) Current Limit vs. RSENSE for Direct Current Sensing (m) Power Device ON Resistance (RDS(ON)) vs. VCC () Direct Current Sensing Level vs. Temperature (RSENSE = 33Ω) Current Limit vs. RSENSE for Kelvin Current Sensing () (C) Kelvin Current Sensing Levels vs. Temperature (RSENSE = 18Ω) (C) (C) NIS5135 Document number: DS37968 Rev. 3 – 2 Kelvin Current Sensing Levels vs. Temperature (RSENSE = 39Ω) 8 of 13 www.diodes.com May 2016 © Diodes Incorporated NIS5135 Application Note Theory of Operation The NIS5135 is a self-protected, resettable electronic fuse. It monitors the input and output voltage, the output current and the die temperature. When the NIS5135 is powered up it will ramp up the output voltage based on the dv/dt setting (see description below) and current will begin to flow. The device current limit can be set with an external resistor, the ramp rate (dv/dt) can be adjusted with an external capacitor. The Overvoltage Clamp, Undervoltage Lockout and Thermal Protection are internally set. Power Supply Considerations Placing a high-value electrolytic capacitor or X7R (X5R) ceramic capacitor between Vdd to GND (10F) and SOURCE to GND (70F) as close to the device as possible is highly recommended. This precaution reduces power-supply transients that may cause ringing on the input and load transients that may cause output voltage falls below input voltage resulting device over-heat. Current Limit The NIS5135 incorporates a sensefet with a reference and amplifier to control the current in the device. The sensefet uses a small fraction of the load current to measure the actual current. This reduces the losses as a smaller sense resistor can be used. The current can be measured directly with the Rs resistor connected between the load and the I LIMIT pin (see Figure 1). That method includes the resistance of the bond wires in the current limiting circuit. A Kelvin connection (see Figure 2) can be used also; in that case one of the 5 source pins will be used and the voltage is measured on the die, eliminating the bond wire resistance. That reduces the source pins to the load to four and therefore increases the on-resistance of the effuse to the load. Overvoltage Clamp The NIS5135MN1 and NIS5135MN2 monitor the input voltage and clamp it once it exceeds 6.65V. This will allow for transient on the input for short periods of time. If the input voltage stays above 6.65V for extended times the voltage drop across the FET with the load current will increase the die temperature and the thermal shutdown feature will protect the device and shut it down. Undervoltage Lock Out The input voltage of the NIS5135 is monitored by an UVLO circuit (undervoltage lockout) if the input voltage drops below this threshold the output transistor will be pulled into a high impedance state. dv/dt The NIS5135 has an integrated control circuit that forces a linear ramp on the output voltage raise regardless of the load impedance. Without connecting a capacitor on the dv/dt pin the ramp time is roughly 2ms. Adding an external capacitor can increase this ramp rate. The internal current source of 90µA will charge the external capacitor at a slow rate. It is recommended to utilize a ceramic capacitor. The ramp time can be determined with the following equation: Cext in Farad tramp in seconds The ramp-up circuit is discharged and VOUT starts from 0V when the units shut down after a fault, enable shutdown or input power cycle. Enable/Fault The NIS5135 has a tri state Enable/Fault pin. It is used to turn on and off the device with high and low signals from a GPIO, but can also indicate a thermal fault. When the Enable/Fault pin is pulled low, the output is turned off. When the Enable/Fault pin is pulled high, the output is turned on. In the event of a thermal fault, the Enable/Fault pin will be pulled low to an intermediate voltage by an internal circuit. This can be used to chain up to 4 NIS5135 together that during a thermal shut down the linked devices turn off as well. Due to this fault indication capability, it should not be connected to any type of logic with an internal pull up device. The NIS5135MN1 connected to a 2nd device will latch off until the Enable/Fault pin has been pulled to low and then allowed to go back up to a high signal, or if the power has been cycled. Once the part starts up again it will go through the start up ramp determined by the internal circuit or based on the externally connected capacitor on pin dv/dt. The MN2 devices will auto restart once the part that indicated a thermal shutdown has cooled down. It will also go through the start up ramp. NIS5135 Document number: DS37968 Rev. 3 – 2 9 of 13 www.diodes.com May 2016 © Diodes Incorporated NIS5135 Application Note (Cont.) Enable/Fault (Cont.) Figure 4. Enable/Fault Signal Levels Thermal Protection The NIS5135 has an integrated temperature sensing circuit that protects the die in the event of over temperature. The trip point has been intentionally set high at +175˚C to allow for increased trip times during high power transient events. The NIS5135 will shut down current flow to the output when the die temperature reaches +175°C. The NIS5135MN1 will restart after the Enable pin has been toggled or the input power has been cycled. The NIS5135MN2 will auto restart after the die temperature has been reduced by -45°C. Even though the thermal trip point has been set high to allow for high current transients the circuit design should accomplish best thermal performance with good thermal layout of the PCB. It is not recommended to operate NIS5135 above +150°C over extended periods of time. NIS5135 Document number: DS37968 Rev. 3 – 2 10 of 13 www.diodes.com May 2016 © Diodes Incorporated NIS5135 Ordering Information NIS5135 XXX - XX - 7 Package Packing FN : U-DFN3030-10 7 : Tape & Reel Feature Option MN1 : Thermal Latching with VCLAMP MN2 : Thermal Auto-retry with VCLAMP Part Number Package Code Packaging NIS5135MN1-FN-7 FN U-DFN3030-10 7” Tape and Reel Quantity Part Number Suffix 3,000/Tape & Reel -7 NIS5135MN2-FN-7 FN U-DFN3030-10 3,000/Tape & Reel -7 Marking Information (1) Package Type: U-DFN3030-10 ( Top View ) XX YWX Part Number NIS5135MN1-FN-7 NIS5135MN2-FN-7 XX : Identification Code Y : Year : 0~9 W : Week : A~Z : 1~26 week; a~z : 27~52 week; z represents 52 and 53 week X : A~Z : Internal Code Package U-DFN3030-10 U-DFN3030-10 Identification Code M5 N5 Package Outline Dimensions (1) Package Type: U-DFN3030-10 A3 A SEATING PLANE A1 D D2 Pin#1 ID E E2 L z NIS5135 Document number: DS37968 Rev. 3 – 2 e U-DFN3030-10 Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.02 A3 0.15 b 0.20 0.30 0.25 D 2.90 3.10 3.00 D2 2.30 2.50 2.40 e 0.50 E 2.90 3.10 3.00 E2 1.50 1.70 1.60 L 0.25 0.55 0.40 z 0.375 All Dimensions in mm b 11 of 13 www.diodes.com May 2016 © Diodes Incorporated NIS5135 Suggested Pad Layout (1) Package Type: U-DFN3030-10 Y C Dimensions Value (in mm) Z 2.60 G 0.15 X 1.80 X1 0.60 Y 0.30 C 0.50 X1 G X G Z Taping Orientation (1) Note: Package Type: U-DFN3030-10 12. The taping orientation of the other package type can be found on our website at http://www.diodes.com/datasheets/ap02007.pdf. NIS5135 Document number: DS37968 Rev. 3 – 2 12 of 13 www.diodes.com May 2016 © Diodes Incorporated NIS5135 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2016, Diodes Incorporated www.diodes.com NIS5135 Document number: DS37968 Rev. 3 – 2 13 of 13 www.diodes.com May 2016 © Diodes Incorporated