1SMB10CAT3 D

1SMB10CAT3G Series,
SZ1SMB10CAT3G Series
600 Watt Peak Power Zener
Transient Voltage
Suppressors
http://onsemi.com
Bidirectional
The SMB series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMB series is supplied in
ON Semiconductor’s exclusive, cost-effective, highly reliable
SURMETIC  package and is ideally suited for use in
communication systems, automotive, numerical controls, process
controls, medical equipment, business machines, power supplies and
many other industrial/consumer applications.
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
10−78 V, 600 W PEAK POWER
SMB
CASE 403C
PLASTIC
Features










Working Peak Reverse Voltage Range − 10 V to 75 V
Standard Zener Breakdown Voltage Range − 11.7 V to 91.7 V
Peak Power − 600 Watts @ 1 ms
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5 mA Above 10 V
UL 497B for Isolated Loop Circuit Protection
Response Time is Typically < 1 ns
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
Pb−Free Packages are Available*
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260C for 10 Seconds
LEADS: Modified L−Bend providing more contact area to bond pads
POLARITY: Polarity band will not be indicated
MOUNTING POSITION: Any
MARKING DIAGRAM
ALYW
xxCG
G
A
Y
WW
xxC
G
= Assembly Location
= Year
= Work Week
= Specific Device Code
= (See Table on Page 3)
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device**
Package
Shipping†
1SMBxxCAT3G
SMB
(Pb−Free)
2,500 /
Tape & Reel
SZ1SMBxxCAT3G
SMB
(Pb−Free)
2,500 /
Tape & Reel
**The “T3” suffix refers to a 13 inch reel.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2012
February, 2012 − Rev. 13
1
Individual devices are listed on page 3 of this data sheet.
Publication Order Number:
1SMB10CAT3/D
1SMB10CAT3G Series, SZ1SMB10CAT3G Series
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1) @ TL = 25C, Pulse Width = 1 ms
PPK
600
W
DC Power Dissipation @ TL = 75C Measured Zero Lead Length (Note 2)
Derate Above 75C
Thermal Resistance from Junction−to−Lead
PD
3.0
40
25
W
mW/C
C/W
RqJA
0.55
4.4
226
W
mW/C
C/W
TJ, Tstg
−65 to +150
C
DC Power Dissipation (Note 3) @ TA = 25C
Derate Above 25C
Thermal Resistance from Junction−to−Ambient
RqJL
PD
Operating and Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 ms, non−repetitive
2. 1 square copper pad, FR−4 board
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec
*Please see 1SMB5.0AT3 to 1SMB170AT3 for Unidirectional devices
ELECTRICAL CHARACTERISTICS
(TA = 25C unless otherwise noted)
Symbol
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
IR
VBR
IT
I
Parameter
IPP
VRWM
IPP
IT
VC VBR VRWM IR
IR VRWM VBR VC
IT
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
IPP
Test Current
Bi−Directional TVS
http://onsemi.com
2
V
1SMB10CAT3G Series, SZ1SMB10CAT3G Series
ELECTRICAL CHARACTERISTICS
Device*
Device
Marking
VC @ IPP (Note 6)
Breakdown Voltage
VRWM
(Note 4)
IR @ VRWM
Volts
mA
Min
Nom
@ IT
VC
IPP
Ctyp
(Note 7)
Max
mA
Volts
Amps
pF
VBR (Note 5) Volts
1SMB10CAT3G
1SMB11CAT3G
1SMB12CAT3G
1SMB13CAT3G
KXC
KZC
LEC
LGC
10
11
12
13
5.0
5.0
5.0
5.0
11.1
12.2
13.3
14.4
11.69
12.84
14.00
15.16
12.27
13.5
14.7
15.9
1.0
1.0
1.0
1.0
17.0
18.2
19.9
21.5
35.3
33.0
30.2
27.9
805
740
680
630
1SMB14CAT3G
1SMB15CAT3G
1SMB16CAT3G
1SMB17CAT3G
LKC
LMC
LPC
LRC
14
15
16
17
5.0
5.0
5.0
5.0
15.6
16.7
17.8
18.9
16.42
17.58
18.74
19.90
17.2
18.5
19.7
20.9
1.0
1.0
1.0
1.0
23.2
24.4
26.0
27.6
25.8
24.0
23.1
21.7
590
555
520
490
1SMB18CAT3G
1SMB20CAT3G
1SMB22CAT3G
1SMB24CAT3G
LTC
LVC
LXC
LZC
18
20
22
24
5.0
5.0
5.0
5.0
20.0
22.2
24.4
26.7
21.06
23.37
25.69
28.11
22.1
24.5
27.0
29.5
1.0
1.0
1.0
1.0
29.2
32.4
35.5
38.9
20.5
18.5
16.9
15.4
465
425
390
366
1SMB26CAT3G
1SMB28CAT3G
1SMB30CAT3G
1SMB33CAT3G
MEC
MGC
MKC
MMC
26
28
30
33
5.0
5.0
5.0
5.0
28.9
31.1
33.3
36.7
30.42
32.74
35.06
38.63
31.9
34.4
36.8
40.6
1.0
1.0
1.0
1.0
42.1
45.4
48.4
53.3
14.2
13.2
12.4
11.3
330
310
290
265
1SMB36CAT3G
1SMB40CAT3G
1SMB43CAT3G
1SMB45CAT3G
MPC
MRC
MTC
MVC
36
40
43
45
5.0
5.0
5.0
5.0
40.0
44.4
47.8
50.0
42.11
46.74
50.32
52.63
44.2
49.1
52.8
55.3
1.0
1.0
1.0
1.0
58.1
64.5
69.4
72.2
10.3
9.3
8.6
8.3
245
220
210
200
1SMB48CAT3G
1SMB51CAT3G
1SMB54CAT3G
1SMB58CAT3G
MXC
MZC
NEC
NGC
48
51
54
58
5.0
5.0
5.0
5.0
53.3
56.7
60.0
64.4
56.11
59.69
63.16
67.79
58.9
62.7
66.32
71.18
1.0
1.0
1.0
1.0
77.4
82.4
87.1
93.6
7.7
7.3
6.9
6.4
190
175
170
155
1SMB60CAT3G
1SMB64CAT3G
1SMB75CAT3G
NKC
NMC
NRC
60
64
75
5.0
5.0
5.0
66.7
71.1
83.3
70.21
74.84
91.65
73.72
78.58
92.07
1.0
1.0
1.0
96.8
103
121
6.2
5.8
4.9
150
145
125
4. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than
the DC or continuous peak operating voltage level.
5. VBR measured at pulse test current IT at an ambient temperature of 25C.
6. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data − 600 Watt at the beginning of this group.
7. Bias Voltage = 0 V, F = 1 MHz, TJ = 25C
*Include SZ-prefix devices where applicable.
http://onsemi.com
3
1SMB10CAT3G Series, SZ1SMB10CAT3G Series
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 2
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO 50%
OF IPP.
tr 10 ms
100
10
PEAK VALUE - IPP
VALUE (%)
PPK, PEAK POWER (kW)
100
I
HALF VALUE - PP
2
50
1
tP
0.1
0.1 ms
1 ms
10 ms
100 ms
1 ms
0
10 ms
0
1
tP, PULSE WIDTH
4
5
Figure 2. Pulse Waveform
1000
160
1SMB10CAT3G
140
C, CAPACITANCE (pF)
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ TA = 25 C
3
t, TIME (ms)
Figure 1. Pulse Rating Curve
120
100
80
60
40
1SMB18CAT3G
1SMB48CAT3G
100
1SMB75CAT3G
10
TJ = 25C
f = 1 MHz
20
0
2
0
25
50
75
100
125
150
1
1
10
BIAS VOLTAGE (V)
TA, AMBIENT TEMPERATURE (C)
Figure 3. Pulse Derating Curve
100
Figure 4. Typical Junction Capacitance vs. Bias
Voltage
TYPICAL PROTECTION CIRCUIT
Zin
LOAD
Vin
http://onsemi.com
4
VL
1SMB10CAT3G Series, SZ1SMB10CAT3G Series
APPLICATION NOTES
Response Time
minimum lead lengths and placing the suppressor device as
close as possible to the equipment or components to be
protected will minimize this overshoot.
Some input impedance represented by Zin is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitive
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 5.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 6. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. The SMB series have
a very good response time, typically < 1 ns and negligible
inductance. However, external inductive effects could
produce unacceptable overshoot. Proper circuit layout,
V
Duty Cycle Derating
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 7. Average power must be derated as the lead or
ambient temperature rises above 25C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 7 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10 ms pulse. However, when the derating factor for a
given pulse of Figure 7 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.
V
Vin (TRANSIENT)
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
Vin (TRANSIENT)
VL
VL
Vin
td
tD = TIME DELAY DUE TO CAPACITIVE EFFECT
t
t
Figure 5.
Figure 6.
1
0.7
DERATING FACTOR
0.5
0.3
0.2
PULSE WIDTH
10 ms
0.1
0.07
0.05
1 ms
0.03
100 ms
0.02
0.01
10 ms
0.1 0.2
0.5
1
2
5
10
D, DUTY CYCLE (%)
20
50 100
Figure 7. Typical Derating Factor for Duty Cycle
http://onsemi.com
5
1SMB10CAT3G Series, SZ1SMB10CAT3G Series
UL RECOGNITION
including Strike Voltage Breakdown test, Endurance
Conditioning,
Temperature
test,
Dielectric
Voltage-Withstand test, Discharge test and several more.
Whereas, some competitors have only passed a
flammability test for the package material, we have been
recognized for much more to be included in their Protector
category.
The entire series has Underwriters Laboratory
Recognition for the classification of protectors (QVGQ2)
under the UL standard for safety 497B and File #E210057.
Many competitors only have one or two devices recognized
or have recognition in a non-protective category. Some
competitors have no recognition at all. With the UL497B
recognition, our parts successfully passed several tests
http://onsemi.com
6
1SMB10CAT3G Series, SZ1SMB10CAT3G Series
PACKAGE DIMENSIONS
SMB
CASE 403C−01
ISSUE A
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
A
D
INCHES
DIM MIN
MAX
A
0.160
0.180
B
0.130
0.150
C
0.075
0.095
D
0.077
0.083
H 0.0020 0.0060
J
0.006
0.012
K
0.030
0.050
P
0.020 REF
S
0.205
0.220
B
MILLIMETERS
MIN
MAX
4.06
4.57
3.30
3.81
1.90
2.41
1.96
2.11
0.051
0.152
0.15
0.30
0.76
1.27
0.51 REF
5.21
5.59
C
K
P
J
H
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SURMETIC is a registered trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
7
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
1SMB10CAT3/D
Similar pages