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技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF300R17KE3
62mmC-SerienModulmitTrench/FeldstopIGBT3undEmitterControlled3Diode
62mmC-seriesmodulewithtrench/fieldstopIGBT3andEmitterControlled3diode
IGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
初步数据
PreliminaryData
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
VCES
1700
V
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 80°C, Tvj max = 150°C
TC = 25°C, Tvj max = 150°C
IC nom
IC
300
404
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
600
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 150
Ptot
1450
W
栅极-发射极峰值电压
Gate-emitterpeakvoltage
VGES
+/-20
V
特征值/CharacteristicValues
min.
集电极-发射极饱和电压
Collector-emittersaturationvoltage
IC = 300 A, VGE = 15 V
IC = 300 A, VGE = 15 V
栅极阈值电压
Gatethresholdvoltage
IC = 12,0 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
Tvj = 25°C
Tvj = 125°C
VCE sat
A
A
typ.
max.
2,00
2,40
2,45
V
V
VGEth
5,2
5,8
6,4
V
VGE = -15 V ... +15 V
QG
3,50
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
2,5
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
27,0
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
0,90
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 1700 V, VGE = 0 V, Tvj = 25°C
ICES
3,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
400
nA
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 300 A, VCE = 900 V
VGE = ±15 V
RGon = 4,7 Ω
Tvj = 25°C
Tvj = 125°C
td on
0,28
0,30
µs
µs
上升时间(电感负载)
Risetime,inductiveload
IC = 300 A, VCE = 900 V
VGE = ±15 V
RGon = 4,7 Ω
Tvj = 25°C
Tvj = 125°C
tr
0,08
0,10
µs
µs
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 300 A, VCE = 900 V
VGE = ±15 V
RGoff = 4,7 Ω
Tvj = 25°C
Tvj = 125°C
td off
0,80
1,00
µs
µs
下降时间(电感负载)
Falltime,inductiveload
IC = 300 A, VCE = 900 V
VGE = ±15 V
RGoff = 4,7 Ω
Tvj = 25°C
Tvj = 125°C
tf
0,12
0,20
µs
µs
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 300 A, VCE = 900 V, LS = 60 nH
VGE = ±15 V, di/dt = 3600 A/µs
RGon = 4,7 Ω
Tvj = 25°C
Tvj = 125°C
Eon
71,0
105
mJ
mJ
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
IC = 300 A, VCE = 900 V, LS = 60 nH
VGE = ±15 V, du/dt = 3500 V/µs
RGoff = 4,7 Ω
Tvj = 25°C
Tvj = 125°C
Eoff
64,0
94,0
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 1000 V
VCEmax = VCES -LsCE ·di/dt
ISC
结-外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,033
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:HS
dateofpublication:2013-10-03
approvedby:WR
revision:2.1
1
tP ≤ 10 µs, Tvj = 125°C
1200
A
0,085 K/W
K/W
125
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF300R17KE3
初步数据
PreliminaryData
二极管,逆变器/Diode,Inverter
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VRRM 1700
V
IF
300
A
IFRM
600
A
I²t
14500
A²s
特征值/CharacteristicValues
min.
typ.
max.
1,80
1,90
2,20
正向电压
Forwardvoltage
IF = 300 A, VGE = 0 V
IF = 300 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
VF
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 300 A, - diF/dt = 3600 A/µs (Tvj=125°C) Tvj = 25°C
VR = 900 V
Tvj = 125°C
VGE = -15 V
IRM
350
380
A
A
恢复电荷
Recoveredcharge
IF = 300 A, - diF/dt = 3600 A/µs (Tvj=125°C) Tvj = 25°C
VR = 900 V
Tvj = 125°C
VGE = -15 V
Qr
78,0
130
µC
µC
反向恢复损耗(每脉冲)
Reverserecoveryenergy
IF = 300 A, - diF/dt = 3600 A/µs (Tvj=125°C) Tvj = 25°C
VR = 900 V
Tvj = 125°C
VGE = -15 V
Erec
40,0
72,0
mJ
mJ
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,051
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:HS
dateofpublication:2013-10-03
approvedby:WR
revision:2.1
2
V
V
0,13 K/W
K/W
125
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF300R17KE3
初步数据
PreliminaryData
模块/Module
绝缘测试电压
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min.
模块基板材料
Materialofmodulebaseplate
内部绝缘
Internalisolation
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
爬电距离
Creepagedistance
VISOL 3,4
kV
Cu
Al2O3
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
20,0
mm
电气间隙
Clearance
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
11,0
mm
相对电痕指数
Comperativetrackingindex
CTI
> 400
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个模块/permodule
λPaste=1W/(m·K)/λgrease=1W/(m·K)
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
TC=25°C,每个开关/perswitch
储存温度
Storagetemperature
模块安装的安装扭距
Mountingtorqueformodulmounting
min.
typ.
RthCH
0,01
LsCE
20
nH
RCC'+EE'
0,60
mΩ
Tstg
-40
125
°C
螺丝M6根据相应的应用手册进行安装
ScrewM6-Mountingaccordingtovalidapplicationnote
M
3,00
-
6,00
Nm
端子联接扭距
Terminalconnectiontorque
螺丝M6根据相应的应用手册进行安装
ScrewM6-Mountingaccordingtovalidapplicationnote
M
2,5
-
5,0
Nm
重量
Weight
G
340
g
preparedby:HS
dateofpublication:2013-10-03
approvedby:WR
revision:2.1
3
max.
K/W
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF300R17KE3
初步数据
PreliminaryData
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=125°C
600
600
500
500
400
400
IC [A]
IC [A]
Tvj = 25°C
Tvj = 125°C
300
300
200
200
100
100
0
0,0
0,5
1,0
1,5
2,0
VCE [V]
2,5
3,0
3,5
0
4,0
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
VGE = 20V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9V
VGE = 8V
0,0
0,5
1,0
1,5
2,0
2,5 3,0
VCE [V]
3,5
4,0
4,5
5,0
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=4.7Ω,RGoff=4.7Ω,VCE=900V
600
350
Tvj = 25°C
Tvj = 125°C
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
300
500
250
400
E [mJ]
IC [A]
200
300
150
200
100
100
0
50
5
6
7
8
9
VGE [V]
10
11
12
0
13
preparedby:HS
dateofpublication:2013-10-03
approvedby:WR
revision:2.1
4
0
100
200
300
IC [A]
400
500
600
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF300R17KE3
初步数据
PreliminaryData
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=300A,VCE=900V
瞬态热阻抗IGBT,逆变器
transientthermalimpedanceIGBT,Inverter
ZthJC=f(t)
600
1
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
550
ZthJC : IGBT
500
450
400
0,1
ZthJC [K/W]
E [mJ]
350
300
250
200
0,01
150
100
i:
1
2
3
4
ri[K/W]: 0,0085 0,0255 0,034 0,017
τi[s]:
0,01
0,04
0,06 0,3
50
0
0
5
10
15
20
25 30
RG [Ω]
35
40
45
0,001
0,001
50
反偏安全工作区IGBT,逆变器(RBSOA)
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=4.7Ω,Tvj=125°C
0,01
0,1
t [s]
1
10
正向偏压特性二极管,逆变器(典型)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
700
600
IC, Modul
IC, Chip
Tvj = 25°C
Tvj = 125°C
600
500
500
400
IF [A]
IC [A]
400
300
300
200
200
100
100
0
0
200
400
600
0
800 1000 1200 1400 1600 1800
VCE [V]
preparedby:HS
dateofpublication:2013-10-03
approvedby:WR
revision:2.1
5
0,0
0,5
1,0
1,5
VF [V]
2,0
2,5
3,0
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF300R17KE3
初步数据
PreliminaryData
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=4.7Ω,VCE=900V
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=300A,VCE=900V
100
100
Erec, Tvj = 125°C
90
90
80
80
70
70
60
60
E [mJ]
E [mJ]
Erec, Tvj = 125°C
50
50
40
40
30
30
20
20
10
10
0
0
100
200
300
IF [A]
400
500
0
600
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
ZthJC=f(t)
1
ZthJC : Diode
ZthJC [K/W]
0,1
0,01
i:
1
2
3
4
ri[K/W]: 0,013 0,039 0,052 0,026
τi[s]:
0,01 0,04 0,06 0,3
0,001
0,001
0,01
0,1
t [s]
1
10
preparedby:HS
dateofpublication:2013-10-03
approvedby:WR
revision:2.1
6
0
5
10
15
20
25 30
RG [Ω]
35
40
45
50
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF300R17KE3
初步数据
PreliminaryData
接线图/circuit_diagram_headline
封装尺寸/packageoutlines
j
j
n
n
i
i
preparedby:HS
dateofpublication:2013-10-03
approvedby:WR
revision:2.1
7
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF300R17KE3
初步数据
PreliminaryData
使用条件和条款
使用条件和条款
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Terms&Conditionsofusage
Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill
havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch
application.
Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.Anysuchwarrantyisgranted
exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits
characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered.
Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof
ourproduct,pleasecontactthesalesoffice,whichisresponsibleforyou(seewww.infineon.com).Forthosethatarespecifically
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Duetotechnicalrequirementsourproductmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactthe
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ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please
note,thatforanysuchapplicationsweurgentlyrecommend
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preparedby:HS
dateofpublication:2013-10-03
approvedby:WR
revision:2.1
8
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