BSB014N04LX3 G Data Sheet (1.6 MB, EN)

n-Channel Power MOSFET
OptiMOS™
BSB014N04LX3 G
Data Sheet
2.3, 2011-05-24
Final
Industrial & Multimarket
OptiMOS™ Power-MOSFET
BSB014N04LX3 G
1
Description
OptiMOS™40V products are class leading power MOSFETs for highest power
density and energy efficient solutions. Ultra low gate- and output charges together
with lowest on state resistance in small footprint packages make OptiMOS™ 40V
the best choice forthe demanding requirements of voltage regulator solutions in
Servers, Datacom and Telecom applications. Super fast switching Control FETs
together with low EMI Sync FETs provide solutions that are easy to design in.
OptiMOS™ products are available in high performance packages to tackle your
most challenging applications giving full flexibility in optimizing space- efficiency
and cost. OptiMOS™ products are designed to meet and exceed the energy
efficiency and power density requirements of the sharpened next generation
voltage regulation standards in computing applications
Features
•
•
•
•
•
•
•
•
•
•
•
Optimized for high switching frequency DC/DC converter
100% avalanche tested
Excellent gate charge x RDS(on) product (FOM)
Qualified according to JEDEC1) for target applications
Pb-free plating; RoHS compliant
Very low on-resistance RDS(on)
Low profile (<0.7 mm)
Low parasitic inductance
Double.sided cooling
Compatible with DirectFET® package MX footprint and outline
100% Rg Tested
Applications
•
•
•
•
On board power for server
Power managment for high performance computing
Synchronous rectification
High power density point of load converters
Table 1
Key Performance Parameters
Parameter
Value
Unit
Related Links
VDS
40
V
IFX OptiMOS webpage
RDS(on),max
1.4
mΩ
IFX OptiMOS product brief
ID
180
A
IFX OptiMOS spice models
QOSS
89
nC
IFX Design tools
Qg.typ
148
Type
Package
Marking
BSB014N04LX3 G
MG-WDSON-2
0104
1) J-STD20 and JESD22
Final Data Sheet
1
2.3, 2011-05-24
OptiMOS™ Power-MOSFET
BSB014N04LX3 G
2
Maximum ratings
at Tj = 25 °C, unless otherwise specified.
Table 2
Maximum ratings
Parameter
Symbol
Continuous drain current
Values
ID
Pulsed drain current2)
Min.
Typ.
Max.
-
-
180
Unit
Note / Test Condition
A
VGS=10 V, TC=25 °C
128
VGS=10 V, TC=100 °C
36
VGS=10 V, TA=25 °C,
RthJA=45 K/W1)
TC=25 °C
ID,pulse
-
-
400
Avalanche current, single pulse
IAS
-
-
50
Avalanche energy, single pulse
EAS
-
-
260
mJ
Gate source voltage
VGS
-20
-
20
V
Power dissipation
Ptot
-
-
89
W
3)
ID=50 A,RGS=25 Ω
TC=25 °C
2.8
Operating and storage temperature
Tj,Tstg
IEC climatic category; DIN IEC 68-1
TA=25 °C, RthJA=45 K/W
-40
-
150
°C
55
150
56
Ncm
1) J-STD22 and JESD22
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
3
Thermal characteristics
Table 3
Thermal characteristics
Parameter
Symbol
Thermal resistance, junction - case RthJC
Device on PCB
RthJA
Values
Min.
Typ.
Max.
-
1.0
-
-
-
Unit
Note /
Test Condition
°K/W
bottom
1.4
top
45
6 cm2 cooling area1)
1) Device on 40 mm x 40 mm x 1.5 epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB
is vertical in still air.
Final Data Sheet
2
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OptiMOS™ Power-MOSFET
BSB014N04LX3 G
Electrical characteristics
4
Electrical characteristics
Electrical characteristics, at Tj=25 °C, unless otherwise specified.
Table 4
Static characteristics
Parameter
Symbol
Drain-source breakdown voltage V(BR)DSS
Values
Min.
Typ.
Max.
40
-
-
Unit
Note / Test Condition
V
VGS=0 V, ID=1.0 mA
Gate threshold voltage
VGS(th)
1.2
-
2
Zero gate voltage drain current
IDSS
-
0.1
10
-
10
100
-
10
100
nA
VGS=20 V, VDS=0 V
-
1.6
2
mΩ
VGS=4.5 V, ID=25A
-
1.2
1.4
1.0
Gate-source leakage current
IGSS
Drain-source on-state resistance RDS(on)
Gate resistance
RG
0.2
0.5
Transconductance
gfs
65
130
Table 5
VDS=VGS, ID=250 µA
VDS=40 V, VGS=0 V,
Tj=25 °C
µA
VDS=40 V, VGS=0 V,
Tj=125 °C
VGS=10 V, ID=30 A
Ω
S
|VDS|>2|ID|RDS(on)max,
ID=30 A
Dynamic characteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
Input capacitance
Ciss
-
12700
16900
Output capacitance
Coss
-
2400
3200
Reverse transfer capacitance
Crss
-
140
-
Turn-on delay time
td(on)
-
12
-
Rise time
tr
-
8.4
-
Turn-off delay time
td(off)
-
60
-
Fall time
tf
-
10
-
Final Data Sheet
3
Unit
Note /
Test Condition
pF
VGS=0 V, VDS=20 V,
f=1 MHz
ns
VDD=20V, VGS=10 V,
ID=30 A, RG= 1.6 Ω
2.3, 2011-05-24
OptiMOS™ Power-MOSFET
BSB014N04LX3 G
Electrical characteristics
Table 6
Gate charge characteristics1)
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note /
Test Condition
nC
VDD=20 V,
ID=30 A,
VGS=0 to 10 V
Gate to source charge
Qgs
-
33
-
Gate charge at threshold
Qg(th)
-
19
-
Gate to drain charge
Qgd
-
15
-
Switching charge
Qsw
-
29
-
Gate charge total
Qg
-
148
196
Gate plateau voltage
Vplateau
-
2.8
-
V
Gate charge total
Qg
-
71
95
nC
Gate charge total, sync. FET
Qg(sync)
139
VDS=0.1 V,
VGS=0 to 10 V
Output charge
Qoss
89
VDD=20 V, VGS=0 V
VDD=20 V,
ID=30 A,
VGS=0 to 4.5V
1) See figure 16 for gate charge parameter definition
Table 7
Reverse diode characteristics
Parameter
Symbol
Values
Min.
Typ.
Unit
Note /
Test Condition
A
TC=25 °C
Max.
Diode continuous forward current
Is
81
Diode pulse current
IS,pulse
400
Diode forward voltage
VSD
-
0.77
1.1
V
VGS=0 V, IF=30 A,
Tj=25 °C
Reverse recovery charge
Qrr
-
-
50
nC
VR=15 V, IF=Is,
diF/dt=400 A/µs
Final Data Sheet
4
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OptiMOS™ Power-MOSFET
BSB014N04LX3 G
Electrical characteristics diagrams
5
Electrical characteristics diagrams
Table 8
1 Power dissipation
2 Drain current
Ptot = f(TC)
ID=f(TC); parameter:VGS
Table 9
3 Safe operating area TC=25 °C
ID=f(VDS); Tj=25 °C; D=0; parameter: Tp
Final Data Sheet
4 Max. transient thermal impedance
Z(thJC)=f(tp); parameter: D=tp/T
5
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OptiMOS™ Power-MOSFET
BSB014N04LX3 G
Electrical characteristics diagrams
Table 10
5 Typ. output characteristics TC=25 °C
6 Typ. drain-source on-state resistance
ID=f(VDS); Tj=25 °C; parameter: VGS
RDS(on)=f(ID); Tj=25 °C; parameter: VGS
Table 11
7 Typ. transfer characteristics
8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max
gfs=f(ID); Tj=25 °C
Final Data Sheet
6
2.3, 2011-05-24
OptiMOS™ Power-MOSFET
BSB014N04LX3 G
Electrical characteristics diagrams
Table 12
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=30 A; VGS=10 V
VGS(th)=f(Tj); VGS=VDS; ID=250 µA
Table 13
11 Typ. capacitances
12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz
IF=f(VSD); parameter: Tj
Final Data Sheet
7
2.3, 2011-05-24
OptiMOS™ Power-MOSFET
BSB014N04LX3 G
Electrical characteristics diagrams
Table 14
13 Avalanche characteristics
14 Typ. gate charge
IAS=f(tAV); RGS=25 Ω; parameter: Tj(start)
VGS=f(Qgate); ID=30 A pulsed; parameter: VDD
Table 15
15 Drain-source breakdown voltage
16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
Final Data Sheet
8
2.3, 2011-05-24
OptiMOS™ Power-MOSFET
BSB014N04LX3 G
Package outlines
6
Package outlines
Figure 1
Outlines MG-WDSON-2, dimensions in mm/inches
Final Data Sheet
9
2.3, 2011-05-24
OptiMOS™ Power-MOSFET
BSB014N04LX3 G
Package outlines
7
Package outlines
Figure 2
Outlines MG-WDSON-2, dimensions in mm/inches
Final Data Sheet
10
2.3, 2011-05-24
OptiMOS™ Power-MOSFET
BSB014N04LX3 G
Package outlines
8
Package outlines
Figure 3
Outlines MG-WDSON-2, dimensions in mm/inches
9
Marking layout
Final Data Sheet
11
2.3, 2011-05-24
OptiMOS™ Power-MOSFET
BSB014N04LX3 G
Revision History
9
Revision History
Revision History: 2011-05-24, 2.3
Previous Revision:
Revision
Subjects (major changes since last revision)
0.1
Release of target data sheet
2.2
DirectFET Disclaimer Expired
2.3
Insert Marking Layout
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Edition 2011-05-24
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
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Final Data Sheet
12
2.3, 2011-05-24
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