BSF450NE7NH3 Data Sheet (1.3 MB, EN)

MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOS™3Power-MOSFET,75V
BSF450NE7NH3G
DataSheet
Rev.2.2
Final
PowerManagement&Multimarket
OptiMOSª3Power-MOSFET,75V
BSF450NE7NH3G
1Description
CanPAKS
Features
•OptimizedtechnologyforDC/DCconverters
•ExcellentgatechargexRDS(on)product(FOM)
•Superiorthermalresistance
•Dualsidedcooling
•Lowparasiticinductance
•Lowprofile(<0.7mm)
•N-channel,normallevel
•100%avalanchetested
•Pb-freeplating;RoHScompliant
•QualifiedaccordingtoJEDEC1)fortargetapplications
•CompatiblewithDirectFET®packageSTfootprintandoutline
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
75
V
RDS(on),max
45
mΩ
ID
15
A
Type/OrderingCode
Package
BSF450NE7NH3 G
MG-WDSON-2
1)
Marking
0307
RelatedLinks
-
J-STD20 and JESD22
Final Data Sheet
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Rev.2.2,2015-03-30
OptiMOSª3Power-MOSFET,75V
BSF450NE7NH3G
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
3
Rev.2.2,2015-03-30
OptiMOSª3Power-MOSFET,75V
BSF450NE7NH3G
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
Values
Unit
Note/TestCondition
15
10
5
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=10V,TA=25°C,RthJA=58K/W1)
-
60
A
TC=25°C
-
-
17
mJ
ID=8A,RGS=25Ω
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
18
2.2
W
TC=25°C
TA=25°C,RthJA=58K/W1)
Operating and storage temperature
Tj,Tstg
-40
-
150
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
ID,pulse
-
Avalanche energy, single pulse
EAS
Gate source voltage
Pulsed drain current2)
3)
3Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case,
bottom
Values
Min.
Typ.
Max.
RthJC
-
1.0
-
K/W
-
Thermal resistance, junction - case,
top
RthJC
-
-
7
K/W
-
Device on PCB,
6 cm2 cooling area1)
RthJA
-
-
58
K/W
-
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
Final Data Sheet
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Rev.2.2,2015-03-30
OptiMOSª3Power-MOSFET,75V
BSF450NE7NH3G
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
2.9
3.5
V
VDS=VGS,ID=8µA
-
0.1
10
10
100
µA
VDS=75V,VGS=0V,Tj=25°C
VDS=75V,VGS=0V,Tj=125°C
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
37.6
46.5
45
62
mΩ
VGS=10V,ID=8A
VGS=7V,ID=4A
Gate resistance
RG
-
1.5
-
Ω
-
Transconductance
gfs
5.5
11
-
S
|VDS|>2|ID|RDS(on)max,ID=8A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
75
-
Gate threshold voltage
VGS(th)
2.3
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
390
-
pF
VGS=0V,VDS=37.5V,f=1MHz
Output capacitance
Coss
-
110
-
pF
VGS=0V,VDS=37.5V,f=1MHz
Reverse transfer capacitance
Crss
-
22
-
pF
VGS=0V,VDS=37.5V,f=1MHz
Turn-on delay time
td(on)
-
8.0
-
ns
VDD=37.5V,VGS=10V,ID=8A,
RG,ext=1.6Ω
Rise time
tr
-
11.3
-
ns
VDD=37.5V,VGS=10V,ID=8A,
RG,ext=1.6Ω
Turn-off delay time
td(off)
-
11
-
ns
VDD=37.5V,VGS=10V,ID=8A,
RG,ext=1.6Ω
Fall time
tf
-
3.2
-
ns
VDD=37.5V,VGS=10V,ID=8A,
RG,ext=1.6Ω
Unit
Note/TestCondition
Table6Gatechargecharacteristics1)
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
2
-
nC
VDD=37.5V,ID=8A,VGS=0to10V
Gate to drain charge
Qgd
-
2
-
nC
VDD=37.5V,ID=8A,VGS=0to10V
Switching charge
Qsw
-
3
-
nC
VDD=37.5V,ID=8A,VGS=0to10V
Gate charge total
Qg
-
6
-
nC
VDD=37.5V,ID=8A,VGS=0to10V
Gate plateau voltage
Vplateau
-
5.5
-
V
VDD=37.5V,ID=8A,VGS=0to10V
Output charge
Qoss
-
7
-
nC
VDD=37.5V,VGS=0V
1)
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
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OptiMOSª3Power-MOSFET,75V
BSF450NE7NH3G
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Values
Unit
Note/TestCondition
15
A
TC=25°C
-
60
A
TC=25°C
-
0.9
1.2
V
VGS=0V,IF=8A,Tj=25°C
trr
-
24
-
ns
VR=37.5V,IF=IS,diF/dt=400A/µs
Qrr
-
87
-
nC
VR=37.5V,IF=IS,diF/dt=400A/µs
Min.
Typ.
Max.
IS
-
-
Diode pulse current
IS,pulse
-
Diode forward voltage
VSD
Reverse recovery time
Reverse recovery charge
Final Data Sheet
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Rev.2.2,2015-03-30
OptiMOSª3Power-MOSFET,75V
BSF450NE7NH3G
5Electricalcharacteristicsdiagrams
Diagram2:Draincurrent
20
20
15
15
ID[A]
Ptot[W]
Diagram1:Powerdissipation
10
10
5
0
5
0
40
80
120
0
160
0
25
50
75
TC[°C]
100
125
150
175
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
101
10
0.5
2
10
0.2
1 µs
10
10 µs
ID[A]
100 µs
1 ms
100
10 ms
DC
0.1
0.05
ZthJC[K/W]
101
0
0.02
0.01
10-1
single pulse
10-1
10-2
10-1
100
101
102
10-2
10-6
10-5
VDS[V]
10-3
10-2
10-1
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-4
ZthJC=f(tp);parameter:D=tp/T
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Rev.2.2,2015-03-30
OptiMOSª3Power-MOSFET,75V
BSF450NE7NH3G
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
60
80
5.5 V
10 V
70
6V
8V
45
60
7V
RDS(on)[mΩ]
ID[A]
50
7V
30
15
8V
40
10 V
30
20
6V
10
5.5 V
5V
0
0
1
2
0
3
0
20
VDS[V]
40
60
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
60
15
45
gfs[S]
ID[A]
10
30
5
15
150 °C
0
0
2
25 °C
4
6
8
10
0
0
VGS[V]
10
15
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
5
gfs=f(ID);Tj=25°C
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Rev.2.2,2015-03-30
OptiMOSª3Power-MOSFET,75V
BSF450NE7NH3G
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
80
4
70
80 µA
60
3
max
8 µA
VGS(th)[V]
RDS(on)[mΩ]
50
typ
40
2
30
20
1
10
0
-60
-20
20
60
100
140
0
-60
180
-20
20
60
Tj[°C]
100
140
RDS(on)=f(Tj);ID=8A;VGS=10V
VGS(th)=f(Tj);VGS=VDS
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
3
102
10
25 °C
150 °C
25°C 98%
150°C 98%
Ciss
Coss
IF[A]
C[pF]
180
Tj[°C]
2
10
101
Crss
101
0
25
50
75
100
0.0
0.5
VDS[V]
1.5
2.0
2.5
VSD[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
1.0
IF=f(VSD);parameter:Tj
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Rev.2.2,2015-03-30
OptiMOSª3Power-MOSFET,75V
BSF450NE7NH3G
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
102
10
37.5V
15 V
9
60 V
8
7
VGS[V]
IAV[A]
6
101
5
4
3
125°C
100°C
25°C
2
1
100
100
101
102
103
104
0
0
1
tAV[µs]
2
3
4
5
6
7
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=8Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Gate charge waveforms
90
VBR(DSS)[V]
80
70
60
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
10
Rev.2.2,2015-03-30
OptiMOSª3Power-MOSFET,75V
BSF450NE7NH3G
6PackageOutlines
Figure1OutlineMG-WDSON-2,dimensionsinmm/inches
Final Data Sheet
11
Rev.2.2,2015-03-30
OptiMOSª3Power-MOSFET,75V
BSF450NE7NH3G
Figure2OutlineMG-WDSON-2Tape
Final Data Sheet
12
Rev.2.2,2015-03-30
OptiMOSª3Power-MOSFET,75V
BSF450NE7NH3G
Figure3OutlineMG-WDSON-2Boardpad
Final Data Sheet
13
Rev.2.2,2015-03-30
OptiMOSª3Power-MOSFET,75V
BSF450NE7NH3G
RevisionHistory
BSF450NE7NH3 G
Revision:2015-03-30,Rev.2.2
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.2
2015-03-30
Release of Final version
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©2015InfineonTechnologiesAG
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Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
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Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
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intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
14
Rev.2.2,2015-03-30
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