BSB028N06NN3 G Data Sheet (744 KB, EN)

BSB028N06NN3 G
OptiMOS™3 Power-MOSFET
Product Summary
Features
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
VDS
60
V
RDS(on),max
2.8
mW
ID
90
A
• Superior thermal resistance
CanPAKTM M
MG-WDSON-2
• Dual sided cooling
• low parasitic inductance
• Low profile (<0.7mm)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Compatible with DirectFET® package MN footprint and outline2)
Type
Package
Outline
Marking
BSB028N06NN3 G
MG-WDSON-2
MN
0106
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
V GS=10 V, T C=25 °C
90
V GS=10 V, T C=100 °C
85
V GS=10 V, T A=25 °C,
R thJA=58 K/W 2)
22
Unit
A
Pulsed drain current3)
I D,pulse
T C=25 °C
360
Avalanche energy, single pulse
E AS
I D=30 A, R GS=25 W
590
mJ
Gate source voltage
V GS
±20
V
1)
J-STD20 and JESD22
2)
DirectFET® is a trademark of International Rectfier Corporation
BSB028N06NN3 G uses DirectFET® technology licensed from International Rectifier Corporation
Rev. 2.0
page 1
2014-04-17
BSB028N06NN3 G
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot
Value
T C=25 °C
78
T A=25 °C,
T j, T stg
-40 ... 150
IEC climatic category; DIN IEC 68-1
Parameter
W
2.2
R thJA=58 K/W 2)
Operating and storage temperature
Unit
°C
55/150/56
Values
Symbol Conditions
Unit
min.
typ.
max.
bottom
-
1.0
-
top
-
-
1.6
6 cm2 cooling area2)
-
-
58
Thermal characteristics
Thermal resistance, junction - case
Device on PCB
R thJC
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
60
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=102 µA
2
3
4
Zero gate voltage drain current
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
-
0.1
10
V DS=60 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=30 A
-
2.2
2.8
mΩ
Gate resistance
RG
-
0.5
-
W
Transconductance
g fs
42
83
-
S
|V DS|>2|I D|R DS(on)max,
I D=30 A
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3 for more detailed information
Rev. 2.0
page 2
2014-04-17
BSB028N06NN3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
8800
12000 pF
-
2100
2800
Dynamic characteristics
Input capacitance
C iss
V GS=0 V, V DS=30 V,
f =1 MHz
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
64
-
Turn-on delay time
t d(on)
-
21
-
Rise time
tr
-
9
-
Turn-off delay time
t d(off)
-
38
-
Fall time
tf
-
6
-
Gate to source charge
Q gs
-
41
-
Gate to drain charge
Q gd
-
8
-
-
23
-
V DD=30 V, V GS=10 V,
I D=30 A, R G,ext=1.6 W
ns
Gate Charge Characteristics5)
V DD=30 V, I D=30 A,
V GS=0 to 10 V
nC
Switching charge
Q sw
Gate charge total
Qg
-
108
143
Gate plateau voltage
V plateau
-
4.6
-
Output charge
Q oss
-
87
116
-
-
30
-
-
120
-
0.8
1.2
V
-
60
-
ns
-
87
-
nC
V DD=30 V, V GS=0 V
V
Reverse Diode
Diode continuous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
A
T C=25 °C
V GS=0 V, I F=30 A,
T j=25 °C
V R=30 V, I F=I S,
di F/dt =100 A/µs
Reverse recovery charge
4)
5)
Q rr
See figure 13 for more detailed information
See figure 16 for gate charge parameter definition
Rev. 2.0
page 3
2014-04-17
BSB028N06NN3 G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
90
100
80
90
80
70
70
60
ID [A]
Ptot [W]
60
50
40
50
40
30
30
20
20
10
10
0
0
0
25
50
75
100
125
150
175
0
25
TC [°C]
50
75
100
125
150
175
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
101
limited by on-state
resistance
1 µs
10 µs
102
100 µs
100
1 ms
ZthJC [K/W]
101
ID [A]
10 ms
DC
100
0.5
0.2
0.1
10-1
10-1
0.05
0.02
0.01
single pulse
10-2
10-2
10-1
100
101
102
VDS [V]
Rev. 2.0
tp [s]
page 4
2014-04-17
BSB028N06NN3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
360
8
8V
10 V
7V
320
5V
280
5.5 V
6V
6
240
RDS(on) [mW]
ID [A]
6V
200
160
4
7V
5.5 V
8V
120
10V
2
80
5V
40
4.5V
0
0
0
1
2
3
0
40
80
120
VDS [V]
160
200
240
280
320
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
200
160
160
120
ID [A]
gfs [S]
120
80
80
150 °C
40
25 °C
40
0
0
0
2
4
6
8
VGS [V]
Rev. 2.0
0
40
80
120
ID [A]
page 5
2014-04-17
BSB028N06NN3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=30 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
6
4
5
1020 µA
3
102 µA
VGS(th) [V]
RDS(on) [mW]
4
max
3
typ
2
2
1
1
0
0
-60
-20
20
60
100
140
180
-60
-20
20
Tj [°C]
60
100
140
180
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
100
Ciss
Coss
IF [A]
C [pF]
103
10
102
150 °C25 °C
Crss
101
25°C
150°C
98%98%
1
0
10
20
30
40
50
60
VDS [V]
Rev. 2.0
0.0
0.5
1.0
1.5
2.0
VSD [V]
page 6
2014-04-17
BSB028N06NN3 G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 W
V GS=f(Q gate); I D=30 A pulsed
parameter: T j(start)
parameter: V DD
100
12
30 V
10
12V
48 V
125 °C
10
100 °C
VGS [V]
IAV [A]
8
25 °C
6
4
2
1
0
1
10
100
1000
10000
0
30
tAV [µs]
60
90
120
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
66
V GS
Qg
64
VBR(DSS) [V]
62
60
V gs(th)
58
56
Q g(th)
Q sw
Q gs
54
-60
-20
20
60
100
140
Q gate
Q gd
180
Tj [°C]
Rev. 2.0
page 7
2014-04-17
BSB028N06NN3 G
Package Outline
Rev. 2.0
CanPAK™ M
MG-WDSON-2
page 8
2014-04-17
BSB028N06NN3 G
CanPAK™ M
MG-WDSON-2
Dimensions in mm
Rev. 2.0
page 9
2014-04-17
BSB028N06NN3 G
CanPAK™ M
MG-WDSON-2
Dimensions in mm
Raccomended stencil thikness 150 mm
Rev. 2.0
page 10
2014-04-17
BSB028N06NN3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.0
page 11
2014-04-17
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