NUP2301MW6T1 D

NUP2301MW6T1G,
SZNUP2301MW6T1G
Low Capacitance Diode
Array for ESD Protection in
Two Data Lines
http://onsemi.com
NUP2301MW6T1G is a micro−integrated device designed to
provide protection for sensitive components from possible harmful
electrical transients; for example, ESD (electrostatic discharge).
Features
SC−88
CASE 419B
STYLE 23
 Low Capacitance (2.0 pf Maximum Between I/O Lines)
 Single Package Integration Design
 Provides ESD Protection for JEDEC Standards JESD22






Machine Model = Class C
Human Body Model = Class 3B
Protection for IEC61000−4−2 (Level 4)
8.0 kV (Contact)
15 kV (Air)
Ensures Data Line Speed and Integrity
Fewer Components and Less Board Space
Direct the Transient to Either Positive Side or to the Ground
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
This is a Pb−Free Device*
PIN CONFIGURATION
AND SCHEMATIC
VN
1
6
N/C
I/O
2
5
I/O
VP
3
4
N/C
MARKING DIAGRAM
6
68 M
Applications







T1/E1 Secondary IC Protection
T3/E3 Secondary IC Protection
HDSL, IDSL Secondary IC Protection
Video Line Protection
Microcontroller Input Protection
Base Stations
I2C Bus Protection
1
68 = Specific Device Code
M = Date Code
ORDERING INFORMATION
Package
Shipping†
NUP2301MW6T1G
SC−88
(Pb−Free)
3,000 /
Tape & Reel
SZNUP2301MW6T1G
SC−88
(Pb−Free)
3,000 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2012
February, 2012 − Rev. 5
1
Publication Order Number:
NUP2301MW6T1/D
NUP2301MW6T1G, SZNUP2301MW6T1G
MAXIMUM RATINGS (Each Diode) (TJ = 25C unless otherwise noted)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
Value
Unit
VR
70
Vdc
IF
200
mAdc
IFM(surge)
500
mAdc
Repetitive Peak Reverse Voltage
VRRM
70
V
Average Rectified Forward Current (Note 1) (Averaged over any 20 ms Period)
IF(AV)
715
mA
Repetitive Peak Forward Current
IFRM
450
mA
Non−Repetitive Peak Forward Current
t = 1.0 ms
t = 1.0 ms
t = 1.0 S
IFSM
A
2.0
1.0
0.5
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance Junction−to−Ambient
Lead Solder Temperature
Maximum 10 Seconds Duration
Symbol
Max
Unit
RqJA
625
C/W
TL
C
260
Junction Temperature
TJ
−55 to +150
C
Storage Temperature
Tstg
−55 to +150
C
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) (Each Diode)
Characteristic
Symbol
Min
Typ
Max
70
−
−
−
−
−
−
−
−
2.5
30
50
−
1.0
2.0
−
1.6
3
−
−
−
−
−
−
−
−
715
855
1000
1250
Unit
OFF CHARACTERISTICS
V(BR)
Reverse Breakdown Voltage
(I(BR) = 100 mA)
Reverse Voltage Leakage Current
(VR = 70 Vdc)
(VR = 25 Vdc, TJ = 150C)
(VR = 70 Vdc, TJ = 150C)
IR
Capacitance (between I/O pins)
(VR = 0 V, f = 1.0 MHz)
CD
Capacitance (between I/O pin and ground)
(VR = 0 V, f = 1.0 MHz)
CD
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF
2. FR−5 = 1.0 0.75 0.062 in.
3. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
4. Include SZ-prefix devices where applicable.
http://onsemi.com
2
Vdc
mAdc
pF
pF
mVdc
NUP2301MW6T1G, SZNUP2301MW6T1G
IF, FORWARD CURRENT (mA)
100
TA = 85C
10
TA = -40C
1.0
TA = 25C
0.1
0.2
0.4
0.6
0.8
1.0
VF, FORWARD VOLTAGE (V)
1.2
Figure 1. Forward Voltage
10
IR, REVERSE CURRENT (mA)
TA = 150C
TA = 125C
1.0
TA = 85C
0.1
TA = 55C
0.01
TA = 25C
0.001
0
10
20
30
40
VR, REVERSE VOLTAGE (V)
50
Figure 2. Leakage Current
CD, DIODE CAPACITANCE (pF)
1.75
1.5
1.25
1.0
0.75
0
2
4
6
VR, REVERSE VOLTAGE (V)
Figure 3. Capacitance
http://onsemi.com
3
8
NUP2301MW6T1G, SZNUP2301MW6T1G
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE W
D
e
6
5
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
4
HE
−E−
1
2
DIM
A
A1
A3
b
C
D
E
e
L
HE
3
b 6 PL
0.2 (0.008)
M
E
M
A3
INCHES
NOM MAX
0.037 0.043
0.002 0.004
0.008 REF
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
MIN
0.031
0.000
STYLE 23:
PIN 1. Vn
2. CH1
3. Vp
4. N/C
5. CH2
6. N/C
C
A
A1
MILLIMETERS
MIN
NOM MAX
0.80
0.95
1.10
0.00
0.05
0.10
0.20 REF
0.10
0.21
0.30
0.10
0.14
0.25
1.80
2.00
2.20
1.15
1.25
1.35
0.65 BSC
0.10
0.20
0.30
2.00
2.10
2.20
L
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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http://onsemi.com
4
ON Semiconductor Website: www.onsemi.com
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For additional information, please contact your local
Sales Representative
NUP2301MW6T1/D