BSZ076N06NS3 G Data Sheet (243 KB, EN)

Type
BSZ076N06NS3 G
OptiMOSTM3 Power-Transistor
Product Summary
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
V DS
60
V
R DS(on),max
7.6
mΩ
ID
20
A
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
Type
BSZ076N06NS3 G
Package
PG-TSDSON-8
Marking
076N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
V GS=10 V, T C=25 °C2)
20
V GS=10 V, T C=100 °C
20
V GS=10 V, T C=25 °C,
R thJA =50K/W J41 3)
Unit
A
14
Pulsed drain current4)
I D,pulse
T C=25 °C
80
Avalanche energy, single pulse5)
E AS
I D=20 A, R GS=25 Ω
118
mJ
Gate source voltage
V GS
±20
V
1)
J-STD20 and JESD22
2)
Current is limited by bondwire; with an R thJC=1.8 K/W the chip is able to carry 75A.
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
4)
See figure 3 for more detailed information
5)
Rev.2.4
See figure 13 for more detailed information
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BSZ076N06NS3 G
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot
Value
T C=25 °C
69
T A=25 °C,
T j, T stg
-55 ... 150
IEC climatic category; DIN IEC 68-1
Parameter
W
2.1
R thJA=60 K/W 3)
Operating and storage temperature
Unit
°C
55/150/56
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
1.8
minimal footprint
-
-
-
6 cm² cooling area 3)
-
-
60
60
-
-
Thermal characteristics
Thermal resistance, junction - case
R thJC
Device on PCB
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=35 µA
2
3
4
Zero gate voltage drain current
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=60 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=20 A
-
6.1
7.6
mΩ
Gate resistance
RG
-
1
-
Ω
Transconductance
g fs
20
39
-
S
Rev.2.4
|V DS|>2|I D|R DS(on)max,
I D=20 A
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BSZ076N06NS3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
3000
4000
-
660
880
Dynamic characteristics
Input capacitance
C iss
V GS=0 V, V DS=30 V,
f =1 MHz
pF
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
24
-
Turn-on delay time
t d(on)
-
15
-
Rise time
tr
-
40
-
Turn-off delay time
t d(off)
-
20
-
Fall time
tf
-
5
-
Gate to source charge
Q gs
-
15
-
Gate charge at threshold
Q g(th)
-
9
-
Gate to drain charge
Q gd
-
3
-
Switching charge
Q sw
-
9
-
Gate charge total
Qg
-
37
50
Gate plateau voltage
V plateau
-
4.9
-
Output charge
Q oss
-
30
40
-
-
20
-
-
80
-
0.85
1.2
V
-
36
-
ns
-
32
-
nC
V DD=30 V, V GS=10 V,
I D=20 A, R G=3.5 Ω
ns
Gate Charge Characteristics 6)
V DD=30 V, I D=20 A,
V GS=0 to 10 V
V DD=30 V, V GS=0 V
nC
V
Reverse Diode
Diode continuous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
6)
Rev.2.4
T C=25 °C
V GS=0 V, I F=20 A,
T j=25 °C
V R=30 V, I F=20A ,
di F/dt =100 A/µs
A
See figure 16 for gate charge parameter definition
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BSZ076N06NS3 G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
80
25
20
60
I D [A]
P tot [W]
15
40
10
20
5
0
0
0
50
100
150
200
0
50
100
T C [°C]
150
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
102
200
T C [°C]
limited by on-state
resistance
101
1 µs
10 µs
101
100
I D [A]
Z thJC [K/W]
100 µs
100
0.2
0.1
10-1
1 ms
0.5
0.05
0.02
10 ms
0.01
single pulse
DC
10-1
10
10-2
-1
10
0
10
1
10
2
V DS [V]
Rev.2.4
10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
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BSZ076N06NS3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
80
20
10 V
6V
5.5 V
5V
18
7V
70
6V
16
60
14
R DS(on) [mΩ]
50
I D [A]
5.5 V
40
30
12
10
7V
8
10 V
6
5V
20
4
10
2
0
0
0
1
2
3
4
0
20
V DS [V]
40
60
80
60
80
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
80
80
60
60
g fs [S]
I D [A]
parameter: T j
40
20
20
150 °C
25 °C
0
0
0
2
4
6
8
0
20
40
I D [A]
V GS [V]
Rev.2.4
40
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BSZ076N06NS3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=20 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
14
5
12
4
V GS(th) [V]
R DS(on) [mΩ]
10
max
8
350 µA
3
35 µA
2
typ
6
1
4
2
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
103
10000
Ciss
103
25°C 98%
1000
150°C 98%
102
Coss
102
I F [A]
C [pF]
150 °C
100
25 °C
101
101
Crss
10
100
1
0
20
40
60
V DS [V]
Rev.2.4
0
0.5
1
1.5
2
V SD [V]
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BSZ076N06NS3 G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=20 A pulsed
parameter: T j(start)
parameter: V DD
100
12
30 V
10
125 °C
10
100 °C
12 V
25 °C
48 V
V GS [V]
I AV [A]
8
1
6
4
2
0.1
1
10
100
0
1000
0
10
t AV [µs]
20
30
40
Q gate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
70
V GS
Qg
65
V BR(DSS) [V]
60
55
V g s(th)
50
45
Q g(th)
Q sw
Q gs
40
-60
-20
20
60
100
140
Q g ate
Q gd
180
T j [°C]
Rev.2.4
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BSZ076N06NS3 G
Package Outline
Rev.2.4
PG-TSDSON-8
page 8
2009-11-11
BSZ076N06NS3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev.2.4
page 9
2009-11-11
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