Type BSZ16DN25NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Optimized for dc-dc conversion • N-channel, normal level VDS 250 V RDS(on),max 165 mW ID 10.9 A • Excellent gate charge x R DS(on) product (FOM) • Low on-resistance R DS(on) PG-TSDSON-8 • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 Type Package Marking BSZ16DN25NS3 G PG-TSDSON-8 16DN25N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 10.9 T C=100 °C 7.7 Unit A Pulsed drain current2) I D,pulse T C=25 °C 44 Avalanche energy, single pulse E AS I D=5.5 A, R GS=25 W 120 mJ Reverse diode dv /dt dv /dt 10 kV/µs Gate source voltage V GS ±20 V Power dissipation P tot 62.5 W Operating and storage temperature T j, T stg -55 ... 150 °C T C=25 °C IEC climatic category; DIN IEC 68-1 1) 2) 55/150/56 J-STD20 and JESD22 see figure 3 Rev. 2.2 page 1 2011-07-14 BSZ16DN25NS3 G Parameter Values Symbol Conditions Unit min. typ. max. - - 2 - - 60 250 - - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction - ambient R thJA 6 cm2 cooling area3) K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=32 µA 2 3 4 Zero gate voltage drain current I DSS V DS=200 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=200 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=5.5 A - 146 165 mW Gate resistance RG - 2.1 - W Transconductance g fs 7 14 - S |V DS|>2|I D|R DS(on)max, I D=5.5 A 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.2 page 2 2011-07-14 BSZ16DN25NS3 G Parameter Values Symbol Conditions Unit min. typ. max. - 690 920 - 44 59 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 5.2 - Turn-on delay time t d(on) - 6 - Rise time tr - 4 - Turn-off delay time t d(off) - 11 - Fall time tf - 4 - Gate to source charge Q gs - 3.0 - Gate to drain charge Q gd - 1.2 - Switching charge Q sw - 2.1 - Gate charge total Qg - 8.6 11.4 Gate plateau voltage V plateau - 4.3 - Output charge Q oss - 16 22 - - 10.9 - - 44 - 0.9 1.2 V - 103 - ns - 337 - nC V GS=0 V, V DS=100 V, f =1 MHz V DD=100 V, V GS=10 V, I D=5.5 A, R G=1.6 W pF ns Gate Charge Characteristics4) V DD=99 V, I D=5.5 A, V GS=0 to 10 V V DD=100 V, V GS=0 V nC V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 4) A T C=25 °C V GS=0 V, I F=10.9 A, T j=25 °C V R=100 V, I F=I S, di F/dt =100 A/µs See figure 16 for gate charge parameter definition Rev. 2.2 page 3 2011-07-14 BSZ16DN25NS3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 70 12 60 10 50 40 ID [A] Ptot [W] 8 6 30 4 20 2 10 0 0 0 40 80 120 0 160 40 TC [°C] 80 120 160 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 102 101 1 µs 10 µs 101 ZthJC [K/W] ID [A] 100 µs 1 ms 0.5 100 0.2 100 10 ms 0.1 0.02 0.05 0.01 DC 10-1 10-1 10-1 100 101 102 103 VDS [V] Rev. 2.2 single pulse 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2011-07-14 BSZ16DN25NS3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 25 240 6V 7V 200 20 10 V 5.5 V 5V 6V 5.5 V 160 5V ID [A] RDS(on) [mW] 15 10 10 V 8V 120 80 4.5 V 5 40 0 0 0 1 2 3 4 5 0 4 VDS [V] 8 12 16 12 16 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 25 24 20 20 16 ID [A] gfs [S] 15 12 10 8 150 °C 5 4 25 °C 0 0 0 2 4 6 8 Rev. 2.2 0 4 8 ID [A] VGS [V] page 5 2011-07-14 BSZ16DN25NS3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=5.5 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 450 4 400 3.5 320 µA 350 3 32 µA 2.5 250 VGS(th) [V] RDS(on) [mW] 300 98 % 200 2 1.5 typ 150 1 100 0.5 50 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 Tj [°C] Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 103 100 Ciss Coss 25 °C 102 150 °C, 98% IF [A] C [pF] 10 150 °C 101 25 °C, 98% 1 Crss 100 0.1 0 40 80 120 160 200 Rev. 2.2 0 0.5 1 1.5 2 VSD [V] VDS [V] page 6 2011-07-14 BSZ16DN25NS3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=5.5 A pulsed parameter: T j(start) parameter: V DD 10 10 25 °C 200 V 8 125 V 100 °C VGS [V] IAS [A] 6 125 °C 1 50 V 4 2 0.1 0 1 10 100 1000 0 1 2 3 4 5 6 7 8 9 10 Qgate [nC] tAV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 280 V GS Qg VBR(DSS) [V] 270 260 V gs(th) 250 240 Q g(th) Q sw Q gs 230 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [°C] Rev. 2.2 page 7 2011-07-14 BSZ16DN25NS3 G Package Outline:PG-TSDSON-8 Rev. 2.2 page 8 2011-07-14 BSZ16DN25NS3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain Rev. 2.2 page 9 2011-07-14