Data Sheet

INTEGRATED CIRCUITS
DATA SHEET
TDA8552T; TDA8552TS
2 x 1.4 W BTL audio amplifiers with
digital volume control and
headphone sensing
Product specification
Supersedes data of 1998 Jun 02
2002 Jan 04
NXP Semiconductors
Product specification
2 x 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
FEATURES
GENERAL DESCRIPTION
• One pin digital volume control (for each channel)
The TDA8552T is a two channel audio power amplifier that
provides an output power of 2 × 1.4 W into an 8 Ω load
using a 5 V power supply. The circuit contains two BTL
power amplifiers, two digital volume controls and
standby/mute logic. Volume and balance of the amplifiers
are controlled using two digital input pins which can be
driven by simple push-buttons or by a microcontroller.
• Volume setting with up/down pulses
• Auto repeat function on volume setting
• Headphone sensing
• Maximum gain set by selection pin
• Low sensitivity for EMC radiation
Using the selection pin (GAINSEL) the maximum gain can
be set at 20 or 30 dB. The headphone sense input (HPS)
can be used to detect if a headphone is plugged into the
jack connector. If a headphone is plugged into the jack
connector the amplifier switches from the BTL to the SE
mode and the BTL loudspeakers are switched off. This
also results in a reduction of quiescent current
consumption.
• Internal feedback resistors
• Flexibility in use
• Few external components
• Low saturation voltage of output stage
• Standby mode controlled by CMOS compatible levels
• Low standby current
• No switch-on/switch-off plops
The TDA8552T is contained in a 20-pin small outline
package. For the TDA8552TS, which is contained in a
20-pin very small outline package, the maximum output
power is limited by the maximum allowed ambient
temperature. More information can be found in Section
“Thermal design considerations”. The SO20 package has
the four corner leads connected to the die pad so that the
thermal behaviour can be improved by the PCB layout.
• High supply voltage ripple rejection
• Protected against electrostatic discharge
• Outputs short-circuit safe to ground, VDD and across the
load
• Thermally protected.
APPLICATIONS
• Portable consumer products
• Notebook computers
• Communication equipment.
ORDERING INFORMATION
TYPE
NUMBER
TDA8552T
TDA8552TS
2002 Jan 04
PACKAGE
NAME
SO20
DESCRIPTION
plastic small outline package; 20 leads; body width 7.5 mm
SSOP20 plastic shrink small outline package; 20 leads; body width 4.4 mm
2
VERSION
SOT163-1
SOT266-1
NXP Semiconductors
Product specification
2 x 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDD
supply voltage
Iq
quiescent supply current
CONDITIONS
MIN.
TYP.
MAX.
UNIT
2.7
5
5.5
V
BTL mode; VDD = 5 V
−
14
20
mA
BTL mode; VDD = 3.3 V
−
10
15
mA
SE mode; VDD = 5 V
−
8.5
12
mA
SE mode; VDD = 3.3 V
−
5
8
mA
−
1
10
μA
Istb
standby current
Po
output power
THD = 10%; RL = 8 Ω; VDD = 5 V
1
1.4
−
W
Gv
voltage gain
low gain; maximum volume
−
20
−
dB
low gain; minimum volume
−
−60
−
dB
high gain; maximum volume
−
30
−
dB
high gain; minimum volume
−
−50
−
dB
−
64
−
−
0.1
−
%
50
−
−
dB
Nstep
number of volume steps
THD
total harmonic distortion
SVRR
supply voltage ripple
rejection
2002 Jan 04
Po = 0.5 W
3
NXP Semiconductors
Product specification
2 x 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
BLOCK DIAGRAM
handbook, full pagewidth
IN1 17
VDD1
VDD2
VDD3
VDD4
3
8
13
18
VOLUME
CONTROL
20
kΩ
12 OUT1+
MASTER
0.5VDD
15 kΩ
20 dB
3.4 kΩ
UP/DOWN
COUNTER
up
UP/DOWN1 6
VDD
20 kΩ
1.6 kΩ
down
0.5VDD
INTERFACE
15 kΩ
SVR
20 kΩ
30 dB
19 OUT1−
SLAVE
0.5VDD
16
0.5VDD
TDA8552T
15 kΩ
IN2 15
VOLUME
CONTROL
20
kΩ
2 OUT2+
MASTER
15 kΩ
0.5VDD
20 dB
3.4 kΩ
UP/DOWN
COUNTER
up
UP/DOWN2 7
VDD
20 kΩ
1.6 kΩ
down
INTERFACE
20 kΩ
30 dB
15 kΩ
0.5VDD
0.5VDD
9 OUT2−
SLAVE
0.5VDD
15 kΩ
MODE 5
HPS 4
GAIN
SELECTION
STANDBY/MUTE
AND OPERATING
14
1, 10, 11, 20
GAINSEL
GND1 to GND4
Fig.1 Block diagram.
2002 Jan 04
4
MGM608
NXP Semiconductors
Product specification
2 x 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
PINNING
SYMBOL
PIN(1)
DESCRIPTION
GND1
1
ground 1, substrate/leadframe
OUT2+
2
positive loudspeaker terminal
output channel 2
VDD1
3
supply voltage 1
HPS
4
digital input for headphone
sensing
MODE
5
digital trinary input for mode
selection (standby, mute and
operating)
UP/DOWN1
6
digital trinary input for volume
control channel 1
UP/DOWN2
7
digital trinary input for volume
control channel 2
VDD2
8
supply voltage 2
OUT2−
9
negative loudspeaker terminal
output channel 2
GND2
10
ground 2, substrate/leadframe
GND3
11
ground 3, substrate/leadframe
OUT1+
12
positive loudspeaker terminal
output channel 1
VDD3
13
supply voltage 3
GAINSEL
14
digital input for gain selection
IN2
15
audio input channel 2
SVR
16
half supply voltage, decoupling
ripple rejection
IN1
17
audio input channel 1
VDD4
18
supply voltage 4
OUT1−
19
negative loudspeaker terminal
output channel 1
GND4
20
ground 4, substrate/leadframe
handbook, halfpage
20 GND4
OUT2+ 2
19 OUT1−
VDD1 3
18 VDD4
17 IN1
HPS 4
16 SVR
MODE 5
TDA8552T
UP/DOWN1 6
15 IN2
UP/DOWN2 7
14 GAINSEL
VDD2 8
13 VDD3
OUT2− 9
12 OUT1+
GND2 10
11 GND3
MGM610
Fig.2 Pin configuration.
Note
1. For the SO20 (SOT163-1) package only: the ground
pins 1, 10, 11 and 20 are mechanically connected to
the leadframe and electrically to the substrate of the
die. On the PCB the ground pins can be connected to
a copper area to decrease the thermal resistance.
2002 Jan 04
GND1 1
5
NXP Semiconductors
Product specification
2 x 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
FUNCTIONAL DESCRIPTION
Volume control
The TDA8552T is a 2 × 1.4 W BTL audio power amplifier
capable of delivering 2 × 1.4 W output power into an 8 Ω
load at THD = 10% using a 5 V power supply. The gain of
the amplifier can be set by the digital volume control.
The gain in the maximum volume setting is 20 dB (low
gain) or 30 dB (high gain). This maximum gain can be
selected by the gain selection pin. The headphone sense
input (HPS) can be used to detect if a headphone is
plugged into the jack connector. If a headphone is plugged
into the jack connector the amplifier switches from the BTL
to the SE mode and the BTL loudspeakers are switched
off. This also results in a reduction of quiescent current
consumption. Using the MODE pin the device can be
switched to the standby condition, the mute condition or
the normal operating condition. The device is protected by
an internal thermal shutdown protection mechanism.
Each attenuator is controlled with its own UP/DOWN pin
(trinary input):
• Floating UP/DOWN pin: volume remains unchanged
• Negative pulses: decreasing volume
• Positive pulses: increasing volume.
Each pulse on the UP/DOWN pin results in a change in
80
gain of ------ = 1.25 dB (typical value).
64
In the basic application the UP/DOWN pin is switched to
ground or VDD by a double push-button. When the supply
voltage is initially connected, after a complete removal of
the supply, the initial state of the volume control is an
attenuation of 40 dB (low volume), so the gain of the total
amplifier is −20 dB in the low gain setting or −10 dB in the
high gain setting. After powering-up, some positive pulses
have to be applied to the UP/DOWN pin for turning up to
listening volume.
Power amplifier
The power amplifier is a Bridge-Tied Load (BTL) amplifier
with a complementary CMOS output stage. The total
voltage loss for both output power MOS transistors is
within 1 V and with a 5 V supply and an 8 Ω loudspeaker
an output power of 1.4 W can be delivered. The total gain
of this power amplifier can be set at 20 or 30 dB by the gain
selection pin.
Auto repeat
If the UP/DOWN pin is LOW or HIGH for the wait time (twait
in seconds) (one of the keys is pressed) then the device
starts making up or down pulses by itself with a frequency
1
given by -------- (repeat function).
t rep
Gain selection
The wait time and the repeat frequency are set using an
internal RC oscillator with an accuracy of ±10%.
The gain selection can be used for a fixed gain setting,
depending on the application. The gain selection pin must
be hard wired to ground (20 dB) or to VDD (30 dB). Gain
selecting during the operation is not advised, switching is
not guaranteed plop free.
Volume settings in standby mode
When the device is switched with the MODE select pin to
the mute or the standby condition, the volume control
attenuation setting keeps its value, under the assumption
that the voltage on the VDD pin does not fall below the
minimum supply voltage. After switching the device back
to the operation mode, the previous volume setting is
maintained. In the standby mode the volume setting is
maintained as long as the minimum supply voltage is
available. The current consumption is very low,
approximately 1 μA (typ.). In battery fed applications the
volume setting can be maintained during battery exchange
if there is a supply capacitor available.
Input attenuator
The volume control operates as a digitally controlled input
attenuator between the audio input pin and the power
amplifier. In the maximum volume control setting the
attenuation is 0 dB and in the minimum volume control
setting the typical attenuation is 80 dB. The attenuation
can be set in 64 steps by the UP/DOWN pin. Both
attenuators for channels 1 and 2 are separated from each
other and are controlled by there own UP/DOWN pin.
Balance control can be arranged by applying UP/DOWN
pulses only on pins 6 and 7, see Fig.5.
2002 Jan 04
6
NXP Semiconductors
Product specification
2 x 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
Mode select pin
When no headphone is plugged in, the voltage level at the
HPS pin will remain LOW. A voltage less than VDD − 1 V at
the HPS pin will keep the device in the BTL mode, thus the
loudspeakers can be operational. If the HPS pin is not
connected then the device will remain in the BTL mode.
The device is in the standby mode (with a very low current
consumption) if the voltage at the MODE pin is between
VDD and VDD − 0.5 V. At a mode select voltage level of less
than 0.5 V the amplifier is fully operational. In the range
between 1 V and VDD − 1 V the amplifier is in the mute
condition. The mute condition is useful for using it as a ‘fast
mute’, in this mode the output signal is suppressed, while
the volume setting remains at its value. It is advised to
keep the device in the mute condition while the input
capacitor is being charged. This can be achieved by
holding the MODE pin at a level of 0.5VDD, or by waiting
approximately 100 ms before giving the first volume-UP
pulses.
When a headphone is plugged into the connector, the
voltage at the HPS pin will be set to VDD. The device then
switches to the Single-Ended (SE) mode, this means that
the slave power amplifiers at the outputs OUT1− and
OUT2− will be switched to the standby mode. This results
in floating outputs OUT1− and OUT2−, the loudspeaker
signal is thus attenuated by approximately 80 dB and only
the headphone can operate.
One of the benefits of this system is that the loudspeaker
current does not flow through the jack connector switch,
which could give some output power loss. The other
benefit is that the quiescent current is reduced when the
headphone jack is inserted.
Headphone sense pin (HPS)
A headphone can be connected to the amplifier by using a
coupling capacitor for each channel. The common ground
pin of the headphone is connected to the ground of the
amplifier, see Fig.4. By using the HPS pin as illustrated in
Fig.4, the TDA8552T detects if a headphone jack plug is
inserted into the connector.
2002 Jan 04
TDA8552T; TDA8552TS
7
NXP Semiconductors
Product specification
2 x 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
−0.3
+5.5
V
input voltage
−0.3
VDD + 0.3
V
VDD
supply voltage
Vi
operating
IORM
repetitive peak output current
−
1
A
Tstg
storage temperature
−55
+150
°C
Tamb
operating ambient temperature
−40
+85
°C
Vsc
AC and DC short-circuit safe voltage
−
5.5
V
Ptot
maximum power dissipation
SO20
−
2.2
W
SSOP20
−
1.1
W
THERMAL CHARACTERISTICS
See Section “Thermal design considerations” in Chapter “Test and application information”.
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
VALUE
UNIT
in free air
60
K/W
extra copper
55
K/W
in free air
110
K/W
extra copper
80
K/W
thermal resistance from junction to ambient
for the TDA8552T (SO20)
for the TDA8552TS (SSOP20)
Table 1
Power rating; note 1
MUSIC POWER
VDD (V)
RL (Ω)
Po (w)
THD = 10%
Tamb(max) (°C)
OPERATION
Pmax (W)
SO20
SSOP20
3.3
4
0.9
BTL
0.55
120
106
3.3
8
0.6
BTL
0.28
134
127
3.3
16
0.3
BTL
0.14
142
139
3.3
32SE
0.035
headphone
0.03
150
150
5.0
4
2.0
BTL
1.25
81
50
5.0
8
1.4
BTL
0.65
114
98
5.0
16
0.8
BTL
0.32
132
124
5.0
32SE
0.09
headphone
0.07
146
144
continuous sine wave
3.3
4
0.9
BTL
1.1
89
62
5
8
1.4
BTL
1.25
81
50
Note
1. The power rating is based on Rth(j-a) with recommended copper pattern of at least 4 × 1 cm2 to the corner leads and
copper under the IC package.
2002 Jan 04
8
NXP Semiconductors
Product specification
2 x 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
QUALITY SPECIFICATION
Quality specification in accordance with “SNW-FQ-611 part E”, if this type is used as an audio amplifier.
DC CHARACTERISTICS
VDD = 5 V; Tamb = 25 °C; RL = 8 Ω; VMODE = 0 V; total gain setting at 7 dB; according to Fig.4.; unless otherwise
specified.
SYMBOL
PARAMETER
VDD
supply voltage
IDD
supply current
CONDITIONS
BTL mode; VDD = 5 V;
RL = ∞; note 1
MIN.
TYP.
MAX.
UNIT
2.7
5
5.5
V
−
14
20
mA
SE mode; VDD = 5 V
−
8.5
12
mA
BTL mode; VDD = 3.3 V;
RL = ∞; note 1
−
10
15
mA
SE mode; VDD = 3.3 V
−
5
8
mA
Istb
standby current
VMODE = VDD
−
1
10
μA
VO
DC output voltage
note 2
−
2.5
−
V
GAINSEL = 0 V
−
−
50
mV
GAINSEL = VDD
−
−
150
mV
standby
VDD − 0.5 −
VDD
V
⎪VOUT+ − VOUT−⎪ differential output offset
voltage
Mode select pin
VMODE
input voltage
mute
1
−
VDD − 1.4 V
operating
0
−
0.5
V
IMODE
input current
0 < VMODE < VDD
−
−
1
μA
αmute
mute attenuation
note 3
80
tbf
−
dB
VGAINSEL
input voltage
low gain (20 dB)
0
−
0.6
V
high gain (30 dB)
4.1
−
VDD
V
IGAINSEL
input current
−
−
1
μA
VDD − 1
−
VDD
V
−
−
1
μA
Gain select pin
Headphone sense pin
VHPS
input voltage
IHPS
input current
2002 Jan 04
SE mode; headphone
detected
9
NXP Semiconductors
Product specification
2 x 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
SYMBOL
PARAMETER
TDA8552T; TDA8552TS
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Volume control
tW
pulse width
50
−
−
ns
trep
pulse repetition time
100
−
−
ns
Vth(up)
UP/DOWN pin UP threshold
level
4.1
−
VDD
V
Vfloat(max)
UP/DOWN pin floating high
level
−
−
3.4
V
Vfloat(min)
UP/DOWN pin floating low
level
1.0
−
−
V
Vth(down)
UP/DOWN pin DOWN
threshold level
0
−
0.6
V
II(up/down)
input current UP/DOWN pin
−
−
200
μA
twait
auto repeat wait time
−
500
−
ms
trep
repeat time
−
130
−
ms
low gain; maximum volume
(including power amplifier)
19
20
21
dB
low gain; minimum volume
(including power amplifier)
tbf
−60
tbf
dB
high gain; maximum volume
(including power amplifier)
29
30
31
dB
high gain; minimum volume
(including power amplifier)
tbf
−50
tbf
dB
0 < VUP/DOWN < VDD
key pressed
Volume attenuator
Gv(l)
Gv(h)
Nstep
number of gain steps
−
64
−
ΔGv
variation of gain per step
−
1.25
−
dB
Zi
input impedance
14
20
−
kΩ
Vi(max)(rms)
maximum input voltage
(RMS value)
−
−
1.75
V
Notes
1. With a load connected at the outputs the quiescent current will increase, the maximum of this increase being equal
DC output offset voltage
to 2 × ⎛ ----------------------------------------------------------------⎞
⎝
⎠
RL
2. The DC output voltage with respect to ground is approximately 0.5VDD.
3. Output voltage in mute position is measured with an input of 1 V (RMS) in a bandwidth of 20 kHz, so including noise,
gain select pin is LOW (0 V).
2002 Jan 04
10
NXP Semiconductors
Product specification
2 x 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
AC CHARACTERISTICS (VDD = 3.3 V)
Tamb = 25 °C; RL = 8 Ω; f = 1 kHz; total gain setting at 7 dB; VMODE = 0 V; gain select pin is at 0 V
(maximum gain = 20 dB); according to Fig.4.
SYMBOL
Po
PARAMETER
output power
CONDITIONS
MIN.
TYP.
MAX.
UNIT
THD = 10%; RL = 4 Ω
−
0.9
−
W
THD = 10%; RL = 8 Ω
−
0.6
−
W
THD = 10%; RL = 16 Ω
−
0.3
−
W
THD = 0.5%; RL = 4 Ω
−
0.6
−
W
THD = 0.5%; RL = 8 Ω
−
0.4
−
W
THD = 0.5%; RL = 16 Ω
−
0.2
−
W
Po = 0.1 W; note 1
−
0.1
−
%
THD
total harmonic distortion
Vo(n)
noise output voltage
note 2
−
60
−
μV
SVRR
supply voltage ripple
rejection
note 3
tbf
55
−
dB
Vi(max)
maximum input voltage
THD = 1%;
Gv = −50 to 0 dB
−
−
1.1
V
αsup
channel suppression
VHPS = VDD; note 4
−
80
−
dB
αcs
channel separation
−
55
−
dB
Notes
1. Volume setting at maximum.
2. The noise output voltage is measured at the output in a frequency band from 20 Hz to 20 kHz (unweighted),
Rsource = 0 Ω, gain select pin is LOW (0 V).
3. Supply voltage ripple rejection is measured at the output, with a source impedance of Rsource = 0 Ω at the input.
The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS) is applied to the
positive supply rail, gain select pin is LOW (0 V).
4. Channel suppression is measured at the output with a source impedance of Rsource = 0 Ω at the input and a
frequency of 1 kHz. The output level in the operating single-ended channel (OUT+) is set at 2 V (RMS).
2002 Jan 04
11
NXP Semiconductors
Product specification
2 x 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
AC CHARACTERISTICS (VDD = 5 V)
Tamb = 25 °C; RL = 8 Ω; f = 1 kHz; total gain setting at 7 dB; VMODE = 0 V; Gain select pin is at 0 V
(maximum gain = 20 dB); according to Fig.4; package is SO20.
SYMBOL
Po
THD
PARAMETER
output power
total harmonic distortion
CONDITIONS
MIN.
TYP.
MAX.
UNIT
THD = 10%; RL = 8 Ω
1.0
1.4
−
W
THD = 10%; RL = 16 Ω
−
0.8
−
W
THD = 0.5%; RL = 8 Ω
0.6
1.0
−
W
THD = 0.5%; RL = 16 Ω
−
0.6
−
W
Po = 0.1 W; note 1
−
0.15
0.4
%
Po = 0.5 W; note 1
−
0.1
0.3
%
GAINSEL. = 0 V; note 2
−
60
100
μV
Vo(n)
noise output voltage
GAINSEL. = VDD; note 2
−
100
−
μV
SVRR
supply voltage ripple
rejection
note 3
50
55
−
dB
Vi(max)
a maximum input voltage
THD = 1%;
Gv = −50 to 0 dB
−
−
1.75
V
αsup
channel suppression
VHPS = VDD; note 4
αcs
channel separation
70
80
−
dB
50
−
−
dB
Notes
1. Volume setting at maximum.
2. The noise output voltage is measured at the output in a frequency band from 20 Hz to 20 kHz (unweighted),
Rsource = 0 Ω.
3. Supply voltage ripple rejection is measured at the output, with a source impedance of Rsource = 0 Ω at the input.
The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS) is applied to the
positive supply rail, gain select pin is LOW (0 V).
4. Channel suppression is measured at the output with a source impedance of Rsource = 0 Ω at the input and a
frequency of 1 kHz. The output level in the operating single-ended channel (OUT+) is set at 1 V (RMS).
2002 Jan 04
12
NXP Semiconductors
Product specification
2 x 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
AC CHARACTERISTICS (FOR HEADPHONE; RL = 32 Ω; CONNECTED SE)
VDD = 5 V; Tamb = 25 °C; f = 1 kHz; total gain setting at 20 dB; VMODE = 0 V; gain select pin is 0 V
(maximum gain = 20 dB); according to Fig.4.
SYMBOL
PARAMETER
CONDITIONS
output power
Po
MIN.
TYP.
MAX.
UNIT
THD = 10%; VDD = 3.3 V
−
35
−
mW
THD = 10%; VDD = 5.0 V
−
90
−
mW
THD = 0.5%; VDD = 3.3 V −
25
−
mW
THD = 0.5%; VDD = 5.0 V −
60
−
mW
THD
total harmonic distortion
Po = 60 mW
−
0.04
−
%
Vo(n)
noise output voltage
note 1
−
60
100
μV
SVRR
supply voltage ripple
rejection
note 2
50
55
−
dB
Vi(max)
maximum input voltage
THD = 1%;
Gv = −50 to 0 dB
−
−
1.75
V
αcs
channel separation
50
−
−
dB
Notes
1. The noise output voltage is measured at the output in a frequency band from 20 Hz to 20 kHz (unweighted),
Rsource = 0 Ω, gain select pin is LOW (0 V).
2. Supply voltage ripple rejection is measured at the output, with a source impedance of Rsource = 0 Ω at the input.
The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS) is applied to the
positive supply rail, gain select pin is LOW (0 V).
handbook, full pagewidth
tr
trep
tw
VDD
increasing volume
Vth(UP)
Vfloat(max)
floating
VUP/DOWN
Vfloat(min)
Vth(DOWN)
0
decreasing volume
t
tr
trep
tw
MGM611
The rise time (tr) of the pulse may have any value.
Fig.3 Timing UP/DOWN pin.
2002 Jan 04
13
NXP Semiconductors
Product specification
2 x 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
TEST AND APPLICATION INFORMATION
VDD = 5 V
handbook, full pagewidth
C1
IN1 17
330 nF
VDD3, 4
13, 18
100
nF
C3
C4
220 μF
VOLUME
CONTROL
20
kΩ
VIN1
VDD1, 2
3, 8
C5
12 OUT1+
MASTER
220 μF
0.5VDD
R1
1 kΩ
15 kΩ
20 dB
up
up
volume
control
down
3.4 kΩ
UP/DOWN
COUNTER
VDD
R5
2.2 kΩ
C7
UP/DOWN1 6
VDD
C3
0.5VDD
INTERFACE
19 OUT1−
SLAVE
0.5VDD
SVR 16
headphone jack
tip
0.5VDD
220 μF
C2
8Ω
20 kΩ
1.6 kΩ
down
15 kΩ
100
nF
20 kΩ
30 dB
330 nF
VOLUME
CONTROL
20
kΩ
VIN2
ring
sleeve
TDA8552T
15 kΩ
IN2 15
C6
2 OUT2+
MASTER
220 μF
R4
1 kΩ
15 kΩ
0.5VDD
20 dB
3.4 kΩ
UP/DOWN
COUNTER
VDD
20 kΩ
30 dB
up
up
volume
control
down
R6
2.2 kΩ
UP/DOWN2 7
1.6 kΩ
down
INTERFACE
C8
100 nF
8Ω
20 kΩ
VDD
15 kΩ
0.5VDD
0.5VDD
9 OUT2−
SLAVE
0.5VDD
15 kΩ
VDD
standby
mute
MODE 5
operating
HPS 4
GAIN
SELECTION
STANDBY/MUTE
AND OPERATING
14
1, 10, 11, 20
GAINSEL
GND1 to GND4
R3
100 kΩ
VDD
VDD
R2
820 kΩ
ground
MGM609
Fig.4 Test and application diagram.
2002 Jan 04
14
NXP Semiconductors
Product specification
2 x 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
Test conditions
BTL application
Tamb = 25°C if not specially mentioned; VDD = 5 V;
f = 1 kHz, RL = 8 Ω, Gv = 20 dB, audio band-pass
22 Hz to 22 kHz. The thermal resistance (in standard print,
without extra copper) = 110 K/W for the SSOP20; the
maximum sine wave power dissipation is:
The BTL application diagram is illustrated in Fig.4.
The quiescent current has been measured without any
load impedance. The total harmonic distortion as a
function of frequency was measured with a low-pass filter
of 80 kHz. The value of capacitor C3 influences the
behaviour of the SVRR at low frequencies, increasing the
value of C3 increases the performance of the SVRR.
150 – 25
---------------------- = 1.14 W
110
For Tamb = 60 °C the maximum total power dissipation is:
Headphone application
150 – 60
---------------------- = 0.82 W
110
Tamb = 25°C if not specially mentioned, VDD = 5 V,
f = 1 kHz, RL = 32 Ω, Gv = 14 dB, audio band-pass
22 Hz to 22 kHz.
Thermal design considerations
For headphone application diagram see: Fig.4
The ‘measured’ thermal resistance of the IC package is
highly dependent on the configuration and size of the
application board. All surface mount packages rely on the
traces of the PCB to conduct heat away from the package.
To improve the heat flow, a significant area on the PCB
must be attached to the (ground) pins. Data may not be
comparable between different semiconductor
manufacturers because the application boards and test
methods are not (yet) standardized. Also, the thermal
performance of packages for a specific application may be
different than presented here, because the configuration of
the application boards (copper area) may be different.
NXP Semiconductors uses FR-4 type application boards
with 1 oz copper traces with solder coating Solder Resist
Mask (SRM).
If a headphone is plugged into the headphone jack, the
HPS pin will switch-off the outputs of the SLAVE output
stage, this results in a mute attenuation >80 dB for the
loudspeakers. In this condition the quiescent current will
be reduced.
General remarks
Reduction of the value of capacitor C3 results in a
decrease of the SVRR performance at low frequencies.
The capacitor value of C5 and C6 in combination with the
load impedance of the headphone determines the low
frequency behaviour.
To prevent against high output currents during inserting
the headphone into the headphone jack, resistors of 5.1 Ω
have to be connected in series with the SE output lines.
The SSOP20 package has improved thermal conductivity
which reduces the thermal resistance. Using a practical
PCB layout (see Fig.18) with wider copper tracks to the
corner pins and just under the IC, the thermal resistance
from junction to ambient can be reduced to approximately
80 K/W. For Tamb = 60 °C the maximum total power
The UP/DOWN pin can be driven by a 3-state logic output
stage (microprocessor) without extra external
components. If the UP/DOWN pin is driven by
push-buttons, then it is advised to have an RC-filter
between the buttons and the UP/DOWN pin. Advised
values for the RC-filter are 2.2 kΩ and 100 nF. Resistor R4
is not necessary for basic operation, but is advised to
keep C6 charged to a voltage of 0.5VDD This has the
advantage that the plop noise when inserting the
headphone plug is minimal. If the headphone sense
function (HPS) is not used then the HPS-pin 4 should be
hard-wired to ground. This pin should never be left
unconnected.
– 60
dissipation for this PCB layout is: 150
---------------------- = 1.12 W
80
The thermal resistance for the SO20 is approximately
55 K/W if applied to a PCB with wider copper tracks to the
corner pins and just under the body of the IC.
The maximum total power dissipation for this practical
application is:
150 – 60
---------------------- = 1.63 W
55
2002 Jan 04
Using double push buttons, the volume step for both
channels can be controlled. When for the balance control
only a single contact is used, the balance steps are
1.25 dB. If double contacts are used for the balance
buttons and the dashed connection is made, then the
balance steps are 2.5 dB.
15
NXP Semiconductors
Product specification
2 x 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
Application without volume control
If pins 6, 7 and 8 are hardwired together the device operates with the volume control setting at maximum.
When the supply voltage is connected and the device is switched from standby to mute or operating for the first time then
the gain is ramped up from −20 dB to +20 dB. This takes approximately 5 s.
This maximum gain setting is maintained until the supply voltage drops below the minimum value.
balance left
handbook, full pagewidth
VDD
up
2.2 kΩ
VDD
UP/DOWN1
6
100 nF
TDA8552T
volume
2.2 kΩ
UP/DOWN2
7
100 nF
down
MGM612
VDD
balance right
Fig.5 Volume and balance control using buttons.
2002 Jan 04
16
NXP Semiconductors
Product specification
2 x 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
MGR005
20
MGR006
40
handbook, halfpage
handbook, halfpage
G
(dB)
IDD
(mA)
20
15
0
10
(1)
−20
(2)
5
−40
0
2
3
4
5
VDD (V)
−60
6
0
20
40
60
volume steps
80
VDD = 5 V; RL = 8 Ω.
(1) Gv = 30 dB (max.).
(2) Gv = 20 dB (max.).
RL = ∞.
Fig.6 IDD as a function of VDD.
Fig.7 Gain as a function of volume steps.
MGR007
10
MGR008
10
handbook, halfpage
handbook, halfpage
THD
(%)
THD
(%)
1
1
(1)
(1)
(2)
(2)
10−1
10−2
10−2
(3)
10−1
(3)
10−1
1
Po (W)
10−2
10−2
10
10−1
1
Po (W)
VDD = 5 V; RL = 8 Ω; f = 1 kHz; Gv = 30 dB (max.).
(1) Gv = 0 dB.
(2) Gv = 7 dB.
(3) Gv = 20 dB.
(4) Gv = 30 dB.
VDD = 5 V; RL = 8 Ω; f = 1 kHz; Gv = 20 dB (max.).
(1) Gv = 0 dB.
(2) Gv = 7 dB.
(3) Gv = 20 dB.
Fig.8 THD as a function of Po.
2002 Jan 04
(4)
Fig.9 THD as a function of Po.
17
10
NXP Semiconductors
Product specification
2 x 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
MGR009
10
TDA8552T; TDA8552TS
MGR010
10
handbook, halfpage
handbook, halfpage
THD
(%)
THD
(%)
(1)
1
(1)
1
(2)
(2)
10−1
10−1
(3)
(3)
10−2
10−2
10−1
1
Po (W)
10−2
10−2
10
VDD = 5 V; RL = 8 Ω; Gv = 20 dB (max.).
(1) f = 10 kHz.
(2) f = 1 kHz.
(3) f = 100 Hz.
10−1
1
Po (W)
10
VDD = 5 V; RL = 8 Ω; Gv = 30 dB (max.).
(1) f = 10 kHz.
(2) f = 1 kHz.
(3) f = 100 Hz.
Fig.10 THD as a function of Po.
Fig.11 THD as a function of Po.
MGR011
10
MGR012
10
handbook, halfpage
handbook, halfpage
THD
(%)
THD
(%)
1
1
(1)
(1)
(2)
10−1
(3)
(2)
10−1
(3)
10−2
10
102
103
104
f (Hz)
10−2
10
105
VDD = 5 V; RL = 8 Ω; Po = 0.1 W; Gv = 20 dB (max.).
(1) Gv = 0 dB.
(2) Gv = 7 dB.
(3) Gv = 20 dB.
103
104
f (Hz)
105
VDD = 5 V; RL = 8 Ω; Po = 0.1 W; Gv = 30 dB (max.).
(1) Gv = 0 dB.
(2) Gv = 7 dB.
(3) Gv = 30 dB.
Fig.12 THD as a function of frequency.
2002 Jan 04
102
Fig.13 THD as a function of frequency.
18
NXP Semiconductors
Product specification
2 x 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
MGR013
0
MGR014
2.4
handbook, halfpage
handbook, halfpage
SVRR
(dB)
TDA8552T; TDA8552TS
Vi
(V)
(1)
(1)
(2)
2
−20 (2)
1.6
(3)
(4)
1.2
−40 (5)
0.8
−60 (6)
0.4
−80
10
102
103
104
f (Hz)
0
−50
105
VDD = 5 V; RL = 8 Ω; Vref = 100 mV.
(1) C3 = 10 μF; Gv = 20 dB.
(2) C3 = 10 μF; Gv = 7 dB.
(3) C3 = 100 μF; Gv = 20 dB.
(4) C3 = 10 μF; Gv = 10 dB.
(5) C3 = 100 μF; Gv = 7 dB.
−30
0
10
G (dB)
Fig.14 SVRR as a function of frequency.
Fig.15 Input voltage as a function of gain.
MGL436
0
MGL435
0
handbook, halfpage
handbook, halfpage
αsup
(dB)
αcs
(dB)
−20
−20
−40
−40
−60
−60
(1)
(2)
(1)
(2)
−80
102
103
−80
104
−100
10
105
f (Hz)
102
103
104
105
f (Hz)
VP = 5 V; Vo = 1 V; VHPS = VP.
(1) Channel 1.
(2) Channel 2.
VP = 5 V; Vo = 1 V.
(1) Gv = 30 dB.
(2) Gv = 20 dB.
Fig.16 Channel suppression as a function of
frequency.
Fig.17 Channel separation as a function of
frequency.
2002 Jan 04
30
VDD = 5 V; RL = 8 Ω; f = 1 kHz; THD = 1%.
(1) Gv = 20 dB (max.).
(2) Gv = 30 dB (max.).
(6) C3 = 100 μF; Gv = 10 dB.
−100
10
−10
19
NXP Semiconductors
Product specification
2 x 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
77
handbook, full pagewidth
79
top view
bottom view
+Vdd
GND
220 μF
1.5 kΩ
UP
100 nF
IN1
820
kΩ
MODE
100 kΩ
330 nF
20
1
150 nF
330 nF
220 μF
1.5 kΩ
DOWN
TDA8552/53TS
IN2
20 dB
220 μF
30 dB
TDA
8552/53TS
220 μF
Analog Audio
CIC – Nijmegen
− OUT1 +
HP
5Ω
1 kΩ
5Ω
1 kΩ
− OUT2 +
MGR015
Fig.18 Printed-circuit board layout.
2002 Jan 04
20
NXP Semiconductors
Product specification
2 x 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
PACKAGE OUTLINES
SO20: plastic small outline package; 20 leads; body width 7.5 mm
SOT163-1
D
E
A
X
c
HE
y
v M A
Z
20
11
Q
A2
A
(A 3)
A1
pin 1 index
θ
Lp
L
10
1
e
bp
detail X
w M
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (1)
e
HE
L
Lp
Q
v
w
y
mm
2.65
0.3
0.1
2.45
2.25
0.25
0.49
0.36
0.32
0.23
13.0
12.6
7.6
7.4
1.27
10.65
10.00
1.4
1.1
0.4
1.1
1.0
0.25
0.25
0.1
0.01
0.019 0.013
0.014 0.009
0.51
0.49
0.30
0.29
0.05
0.419
0.043
0.055
0.394
0.016
inches
0.1
0.012 0.096
0.004 0.089
0.043
0.039
0.01
0.01
Z
(1)
0.9
0.4
0.035
0.004
0.016
θ
8o
o
0
Note
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
SOT163-1
075E04
MS-013
2002 Jan 04
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
99-12-27
03-02-19
21
NXP Semiconductors
Product specification
2 x 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
D
SOT266-1
E
A
X
c
y
HE
v M A
Z
11
20
Q
A2
A
(A 3)
A1
pin 1 index
θ
Lp
L
1
10
detail X
w M
bp
e
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (1)
e
HE
L
Lp
Q
v
w
y
Z (1)
θ
mm
1.5
0.15
0
1.4
1.2
0.25
0.32
0.20
0.20
0.13
6.6
6.4
4.5
4.3
0.65
6.6
6.2
1
0.75
0.45
0.65
0.45
0.2
0.13
0.1
0.48
0.18
10
o
0
Note
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.
OUTLINE
VERSION
SOT266-1
2002 Jan 04
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
99-12-27
03-02-19
MO-152
22
o
NXP Semiconductors
Product specification
2 x 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
SOLDERING
Introduction to soldering surface mount packages
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering can still be used for
certain surface mount ICs, but it is not suitable for fine pitch
SMDs. In these situations reflow soldering is
recommended.
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The footprint must incorporate solder thieves at the
downstream end.
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
Reflow soldering
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending
on heating method.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 220 °C for
thick/large packages, and below 235 °C for small/thin
packages.
Manual soldering
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
Wave soldering
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
To overcome these problems the double-wave soldering
method was specifically developed.
If wave soldering is used the following conditions must be
observed for optimal results:
2002 Jan 04
TDA8552T; TDA8552TS
23
NXP Semiconductors
Product specification
2 x 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
Suitability of surface mount IC packages for wave and reflow soldering methods
SOLDERING METHOD
PACKAGE
WAVE
BGA, HBGA, LFBGA, SQFP, TFBGA
not suitable
suitable(2)
HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, SMS
not
PLCC(3), SO, SOJ
suitable
LQFP, QFP, TQFP
SSOP, TSSOP, VSO
REFLOW(1)
suitable
suitable
suitable
not
recommended(3)(4)
suitable
not
recommended(5)
suitable
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
2. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder
cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,
the solder might be deposited on the heatsink surface.
3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
2002 Jan 04
24
NXP Semiconductors
Product specification
2 x 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Limited warranty and liability ⎯ Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
In no event shall NXP Semiconductors be liable for any
indirect, incidental, punitive, special or consequential
damages (including - without limitation - lost profits, lost
savings, business interruption, costs related to the
removal or replacement of any products or rework
charges) whether or not such damages are based on tort
(including negligence), warranty, breach of contract or any
other legal theory.
Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks
associated with their applications and products.
Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semiconductors products in order to
avoid a default of the applications and the products or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
2002 Jan 04
25
NXP Semiconductors
Product specification
2 x 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products ⎯ Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor tested in accordance with automotive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.
Terms and conditions of commercial sale ⎯ NXP
Semiconductors products are sold subject to the general
terms and conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an
individual agreement is concluded only the terms and
conditions of the respective agreement shall apply. NXP
Semiconductors hereby expressly objects to applying the
customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at
customer’s own risk, and (c) customer fully indemnifies
NXP Semiconductors for any liability, damages or failed
product claims resulting from customer design and use of
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
Semiconductors’ product specifications.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
2002 Jan 04
TDA8552T; TDA8552TS
26
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: [email protected]
© NXP B.V. 2010
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
753503/03/pp27
Date of release: 2002 Jan 04
Document order number:
9397 750 09236
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