Data Sheet

SA58632
2 × 2.2 W BTL audio amplifier
Rev. 02 — 4 March 2010
Product data sheet
1. General description
The SA58632 is a two-channel audio amplifier in an HVQFN20 package. It provides
power output of 2.2 W per channel with an 8 Ω load at 9 V supply. The internal circuit is
comprised of two BTL (Bridge-Tied Load) amplifiers with a complementary PNP-NPN
output stage and standby/mute logic. The SA58632 is housed in a 20-pin HVQFN
package, which has an exposed die attach paddle enabling reduced thermal resistance
and increased power dissipation.
2. Features
„
„
„
„
„
„
„
„
„
Low junction-to-ambient thermal resistance using exposed die attach paddle
Gain can be fixed with external resistors from 6 dB to 30 dB
Standby mode controlled by CMOS-compatible levels
Low standby current < 10 μA
No switch-on/switch-off plops
High power supply ripple rejection: 50 dB minimum
ElectroStatic Discharge (ESD) protection
Output short-circuit to ground protection
Thermal shutdown protection
3. Applications
„ Professional and amateur mobile radio
„ Portable consumer products: toys and games
„ Personal computer remote speakers
SA58632
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
4. Quick reference data
Table 1.
Quick reference data
VCC = 6 V; Tamb = 25 °C; RL = 8 Ω; VMODE = 0 V; measured in test circuit Figure 3; unless otherwise
specified.
Symbol
Parameter
Conditions
VCC
supply voltage
operating
Iq
quiescent current
RL = ∞ Ω
Istb
standby current
Po
output power
THD+N
total harmonic
distortion-plus-noise
PSRR
power supply rejection ratio
Min
Typ
Max
Unit
2.2
9
18
V
-
15
22
mA
VMODE = VCC
-
-
10
μA
THD+N = 10 %
1.2
1.5
-
W
THD+N = 0.5 %
0.9
1.1
-
W
THD+N = 10 %;
VCC = 9 V
-
2.2
-
W
Po = 0.5 W
-
0.15
0.3
%
[2]
50
-
-
dB
[3]
40
-
-
dB
[1]
[1]
With a load connected at the outputs the quiescent current will increase, the maximum of this increase
being equal to the DC output offset voltage divided by RL.
[2]
Supply voltage ripple rejection is measured at the output with a source impedance of Rs = 0 Ω at the input.
The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is
applied to the positive supply rail.
[3]
Supply voltage ripple rejection is measured at the output, with a source impedance of Rs = 0 Ω at the input.
The ripple voltage is a sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of
100 mV (RMS), which is applied to the positive supply rail.
5. Ordering information
Table 2.
Ordering information
Type number Package
SA58632BS
Name
Description
Version
HVQFN20
plastic thermal enhanced very thin quad flat package;
no leads; 20 terminals; body 6 × 5 × 0.85 mm
SOT910-1
SA58632_2
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 4 March 2010
2 of 28
SA58632
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
6. Block diagram
VCCL VCCR
17
SA58632
INL−
INL+
10
16
15
14
OUTL−
R
VCCL
R
20 kΩ
1
OUTL+
20 kΩ
STANDBY/MUTE LOGIC
INR−
INR+
11
12
13
OUTR−
R
VCCR
R
20 kΩ
SVR
6
OUTR+
3
20 kΩ
MODE
BTL/SE
2
4
STANDBY/MUTE LOGIC
5
n.c.
8
9
19
18
20
7
GND GND GND GND LGND RGND
002aac078
Fig 1.
Block diagram of SA58632
SA58632_2
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 4 March 2010
3 of 28
SA58632
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
7. Pinning information
17 VCCL
18 GND
terminal 1
index area
19 GND
20 LGND
7.1 Pinning
OUTL+
1
16 OUTL−
MODE
2
15 INL−
SVR
3
BTL/SE
4
13 INR+
n.c.
5
12 INR−
OUTR+
6
11 OUTR−
14 INL+
8
9
GND
GND
VCCR 10
7
RGND
SA58632BS
002aac079
Transparent top view
Fig 2.
Pin configuration for HVQFN20
7.2 Pin description
Table 3.
Symbol
Pin description
Pin
Description
OUTL+
1
positive loudspeaker terminal, left channel
MODE
2
operating mode select (standby, mute, operating)
SVR
3
half supply voltage, decoupling ripple rejection
BTL/SE
4
BTL loudspeaker or SE headphone operation
n.c.
5
not connected
OUTR+
6
positive loudspeaker terminal, right channel
RGND
7
ground, right channel
GND
8, 9, 18, 19
ground[1]
VCCR
10
supply voltage; right channel
OUTR−
11
negative loudspeaker terminal, right channel
INR−
12
negative input, right channel
INR+
13
positive input, right channel
INL+
14
positive input, left channel
INL−
15
negative input, left channel
OUTL−
16
negative output terminal, left channel
VCCL
17
supply voltage, left channel
LGND
20
ground, left channel
[1]
Pins 8, 9, 18 and 19 are connected to the lead frame and also to the substrate. They may be kept floating.
When connected to the ground plane, the PCB can be used as heatsink.
SA58632_2
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 4 March 2010
4 of 28
SA58632
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
8. Functional description
The SA58632 is a two-channel BTL audio amplifier capable of delivering 2 × 1.5 W output
power to an 8 Ω load at THD+N = 10 % using a 6 V power supply. It is also capable of
delivering 2 × 2.2 W output power to an 8 Ω load at THD+N = 10 % using a 9 V power
supply. Using the MODE pin, the device can be switched to standby and mute condition.
The device is protected by an internal thermal shutdown protection mechanism. The gain
can be set within a range of 6 dB to 30 dB by external feedback resistors.
8.1 Power amplifier
The power amplifier is a Bridge-Tied Load (BTL) amplifier with a complementary
PNP-NPN output stage. The voltage loss on the positive supply line is the saturation
voltage of a PNP power transistor, on the negative side the saturation voltage of an NPN
power transistor. The total voltage loss is < 1 V. With a supply voltage of 6 V and an 8 Ω
loudspeaker, an output power of 1.5 W can be delivered to the load, and with a 9 V supply
voltage and an 8 Ω loudspeaker an output power of 2.2 W can be delivered.
8.2 Mode select pin (MODE)
The device is in Standby mode (with a very low current consumption) if the voltage at the
MODE pin is greater than VCC − 0.5 V, or if this pin is floating. At a MODE voltage in the
range between 1.5 V and VCC − 1.5 V the amplifier is in a mute condition. The mute
condition is useful to suppress plop noise at the output, caused by charging of the input
capacitor. The device is in Active mode if the MODE pin is grounded or less than 0.5 V
(see Figure 6).
8.3 BTL/SE output configuration
To invoke the BTL configuration (see Figure 3), the BTL/SE pin is taken to logic HIGH or
not connected. The output differentially drives the speakers, so there is no need for
coupling capacitors. The headphone can be connected to the amplifier negative outputs
using a coupling capacitor for each channel. The headphone common ground is
connected to the amplifier ground.
To invoke the Single-Ended (SE) configuration (see Figure 15), the BTL/SE pin is taken to
logic LOW or connected to ground. The positive outputs are muted with a DC level of
0.5VCC. Using a coupling capacitor for each channel, speakers can be connected to the
amplifier negative outputs. The speaker common ground is connected to the amplifier
ground. Headphones can be connected to the negative outputs without using output
coupling capacitors. The headphone common ground pin is connected to one of the
amplifier positive output pins.
SA58632_2
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 4 March 2010
5 of 28
SA58632
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
9. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCC
supply voltage
operating
−0.3
+18
V
VI
input voltage
−0.3
VCC + 0.3
V
IORM
repetitive peak output current
-
1
A
Tstg
storage temperature
non-operating
−55
+150
°C
Tamb
ambient temperature
operating
−40
+85
°C
VP(sc)
short-circuit supply voltage
-
10
V
Ptot
total power dissipation
-
2.2
W
HVQFN20
10. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance from junction to ambient
in free air
64.5
Rth(j-sp)
[1]
mm2
(10 square inch) heat spreader
[1]
thermal resistance from junction to solder point
Typ
Unit
80
K/W
22
K/W
3
K/W
Thermal resistance is 22 K/W with DAP soldered to 64.5 mm2 (10 square inch), 1 ounce copper heat spreader.
11. Static characteristics
Table 6.
Static characteristics
VCC = 6 V; Tamb = 25 °C; RL = 8 Ω; VMODE = 0 V; measured in test circuit Figure 3; unless otherwise specified.
Symbol
Parameter
Conditions
VCC
supply voltage
operating
Iq
quiescent current
RL = ∞ Ω
VMODE = VCC
[1]
Min
Typ
Max
Unit
2.2
9
18
V
-
15
22
mA
-
-
10
μA
-
2.2
-
V
-
-
50
mV
-
-
500
nA
Istb
standby current
VO
output voltage
ΔVO(offset)
differential output voltage offset
IIB
input bias current
pins INL+, INR+
pins INL−, INR−
-
-
500
nA
VMODE
voltage on pin MODE
operating
0
-
0.5
V
mute
1.5
-
VCC − 1.5
V
standby
VCC − 0.5
-
VCC
V
[2]
IMODE
current on pin MODE
0 V < VMODE < VCC
-
-
20
μA
VI(SE)
input voltage on pin BTL/SE
single-ended (SE)
0
-
0.6
V
VI(BTL)
input voltage on pin BTL/SE
BTL
0.42 × VCC
-
VCC
V
II(SE)
input current on pin BTL/SE
VI(SE) = 0 V; pin connected
to ground in SE mode
-
-
100
μA
[1]
With a load connected at the outputs the quiescent current will increase, the maximum of this increase being equal to the DC output
offset voltage divided by RL.
SA58632_2
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 4 March 2010
6 of 28
SA58632
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
[2]
The DC output voltage with respect to ground is approximately 0.5 × VCC.
12. Dynamic characteristics
Table 7.
Dynamic characteristics
VCC = 6 V; Tamb = 25 °C; RL = 8 Ω; f = 1 kHz; VMODE = 0 V; measured in test circuit Figure 3; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Po
output power
THD+N = 10 %
1.2
1.5
-
W
THD+N = 0.5 %
0.9
1.1
-
W
THD+N = 10 %; VCC = 9 V;
application demo board
-
2.2
-
W
Po = 0.5 W
-
0.15
0.3
%
6
-
30
dB
-
100
-
kΩ
output noise voltage
[2]
-
-
100
μV
power supply rejection ratio
[3]
50
-
-
dB
[4]
40
-
-
dB
[5]
-
-
200
μV
40
-
-
dB
THD+N
total harmonic
distortion-plus-noise
Gv(cl)
closed-loop voltage gain
ΔZi
differential input impedance
Vn(o)
PSRR
VO(mute)
mute output voltage
αcs
channel separation
[1]
mute condition
[1]
Gain of the amplifier is 2 × (R2 / R1) in test circuit of Figure 3.
[2]
The output noise voltage is measured at the output in a frequency range from 20 Hz to 20 kHz (unweighted), with a source impedance
of Rs = 0 Ω at the input.
[3]
Supply voltage ripple rejection is measured at the output with a source impedance of Rs = 0 Ω at the input. The ripple voltage is a
sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is applied to the positive supply rail.
[4]
Supply voltage ripple rejection is measured at the output, with a source impedance of Rs = 0 Ω at the input. The ripple voltage is a
sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of 100 mV (RMS), which is applied to the positive supply rail.
[5]
Output voltage in mute position is measured with an input voltage of 1 V (RMS) in a bandwidth of 20 kHz, which includes noise.
SA58632_2
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 4 March 2010
7 of 28
SA58632
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
13. Application information
13.1 BTL application
Tamb = 25 °C, VCC = 9 V, f = 1 kHz, RL = 8 Ω, Gv = 20 dB, audio band-pass 22 Hz to
22 kHz. The BTL diagram is shown in Figure 3.
1 μF
VCC
R2
50 kΩ
R1
INL−
15
17
10
10 kΩ
INL+
VIL
16
14
C3
47 μF
OUTL−
RL
1
OUTR−
1 μF
100 μF
100 nF
R4
50 kΩ
R3
SA58632
INR−
10 kΩ
INR+
VIR
OUTL+
SVR
MODE
BTL/SE
12
11
13
OUTR−
3
RL
2
4
6
20
OUTR+
7
GND
002aac080
R2
Gain left = 2 × ------R1
R4
Gain right = 2 × ------R3
Pins 8, 9, 18 and 19 connected to ground.
Fig 3.
Application diagram of SA58632 BTL differential output configuration
SA58632_2
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 4 March 2010
8 of 28
SA58632
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
14. Test information
14.1 Static characterization
The quiescent current has been measured without any load impedance (Figure 4).
Figure 6 shows three areas: operating, mute and standby. It shows that the DC switching
levels of the mute and standby respectively depends on the supply voltage level.
002aac081
30
002aac089
10
VO (V)
1
Iq
(mA)
10−1
20
10−2
(1)
10−3
10
(2)
(3)
10−4
10−5
10−6
10−1
0
0
4
8
12
16
20
VCC (V)
1
102
10
VMODE (V)
RL = ∞ Ω
Band-pass = 22 Hz to 22 kHz.
(1) VCC = 3 V.
(2) VCC = 5 V.
(3) VCC = 12 V.
Fig 4.
Iq versus VCC
Fig 5.
VO versus VMODE
002aac090
16
VMODE
(V)
12
standby
8
mute
4
operating
0
0
4
8
12
16
VCC (V)
Fig 6.
VMODE versus VCC
SA58632_2
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 4 March 2010
9 of 28
SA58632
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
14.2 BTL dynamic characterization
The total harmonic distortion-plus-noise (THD+N) as a function of frequency (Figure 7)
was measured with a low-pass filter of 80 kHz. The value of capacitor C2 influences the
behavior of PSRR at low frequencies; increasing the value of C2 increases the
performance of PSRR.
002aac083
10
002aac084
−60
αcs
(dB)
THD+N
(%)
(1)
−70
1
(2)
(1)
−80
(3)
(2)
10−1
−90
10−2
10
102
103
104
−100
105
102
10
103
f (Hz)
104
105
f (Hz)
VCC = 6 V; VO = 2 V; RL = 8 Ω.
Po = 0.5 W; Gv = 20 dB.
(1) VCC = 6 V; RL = 8 Ω.
(1) Gv = 30 dB.
(2) VCC = 7.5 V; RL = 16 Ω.
(2) Gv = 20 dB.
(3) Gv = 6 dB.
Fig 7.
THD+N versus frequency
Fig 8.
Channel separation versus frequency
002aac085
−20
PSRR
(dB)
(1)
−40
(2)
−60
(3)
−80
10
102
103
104
105
f (Hz)
VCC = 6 V; Rs = 0 Ω; Vripple = 100 mV.
(1) Gv = 30 dB.
(2) Gv = 20 dB.
(3) Gv = 6 dB.
Fig 9.
PSRR versus frequency
SA58632_2
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 4 March 2010
10 of 28
SA58632
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
14.3 Thermal behavior
The measured thermal performance of the HVQFN20 package is highly dependent on the
configuration and size of the heat spreader on the application demo board. Data may not
be comparable between different semiconductors manufacturers because the application
demo boards and test methods are not standardized. Also, the thermal performance of
packages for a specific application may be different than presented here, because of the
configuration of the copper heat spreader of the application boards may be significantly
different.
NXP Semiconductors uses FR-4 type application boards with 1 ounce copper traces with
solder coating.
The demo board (see Figure 23) has a 1 ounce copper heat spreader that runs under the
IC and provides a mounting pad to solder to the die attach paddle of the HVQFN20
package. The heat spreader is symmetrical and provides a heat spreader on both top and
bottom of the PCB. The heat spreader on top and bottom side of the demo board is
connected through 2 mm diameter plated through holes. Directly under the DAP (Die
Attach Paddle), the top and bottom side of the PCB are connected by four vias. The total
top and bottom heat spreader area is 64.5 mm2 (10 in2).
The junction to ambient thermal resistance, Rth(j-a) = 22 K/W for the HVQFN20 package
when the exposed die attach paddle is soldered to 5 square inch area of 1 ounce copper
heat spreader on the demo PCB. The maximum sine wave power dissipation for
Tamb = 25 °C is given in Equation 1:
150 – 25 = 5.7 W
--------------------22
(1)
Thus, for Tamb = 60 °C the maximum total power dissipation is given in Equation 2:
150 – 60
--------------------- = 4.1 W
22
(2)
The power dissipation versus ambient temperature curve (Figure 10) shows the power
derating profiles with ambient temperature for three sizes of heat spreaders. For a more
modest heat spreader using 5 square inch area on the top or bottom side of the PCB, the
Rth(j-a) is 31 K/W. When the package is not soldered to a heat spreader, the Rth(j-a)
increases to 60 K/W.
SA58632_2
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 4 March 2010
11 of 28
SA58632
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
002aac283
6
(1)
P
(W)
(2)
4
2
(3)
0
0
40
80
120
160
Tamb (°C)
(1) 64.5 mm2 heat spreader top and bottom (1 ounce copper).
(2) 32.3 mm2 heat spreader top or bottom (1 ounce copper).
(3) No heat spreader.
Fig 10. Power dissipation versus ambient temperature
The characteristics curves (Figure 11a and Figure 11b, Figure 12, Figure 13a and
Figure 13b, and Figure 14) show the room temperature performance for SA58632 using
the demo PCB shown in Figure 23. For example, Figure 11 “Power dissipation versus
output power” (a and b) show the performance as a function of load resistance and supply
voltage. Worst case power dissipation is shown in Figure 12. Figure 13a shows that the
part delivers typically 2.8 W per channel for THD+N = 10 % using 8 Ω load at 9 V supply,
while Figure 13b shows that the part delivers 3.3 W per channel at 12 V supply and 16 Ω
load, THD+N = 10 %.
SA58632_2
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 4 March 2010
12 of 28
SA58632
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
002aac288
3
002aac289
3
(4)
P
(W)
P
(W)
(3)
2
2
(2)
(3)
(2)
1
1
(1)
(1)
0
0
0
1
2
3
0
1
2
3
Po (W)
4
Po (W)
(1) VCC = 6 V.
(1) VCC = 6 V.
(2) VCC = 7.5 V.
(2) VCC = 7.5 V.
(3) VCC = 9 V.
(3) VCC = 9 V.
(4) VCC = 12 V.
a. RL = 8 Ω; f = 1 kHz; Gv = 20 dB
b. RL = 16 Ω; f = 1 kHz; Gv = 20 dB
Fig 11. Power dissipation versus output power
002aac287
4
Po
(W)
3
2
(1)
(2)
(3)
1
0
0
4
8
12
VCC (V)
(1) RL = 4 Ω.
(2) RL = 8 Ω.
(3) RL = 16 Ω.
Fig 12. Worst case power dissipation versus VCC
SA58632_2
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 4 March 2010
13 of 28
SA58632
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
002aac284
102
THD+N
(%)
10
(1)
(2)
1
10−2
10−2
1
(1) (2) (3) (4)
10
(3)
1
10−3
10−2
002aac285
102
THD+N
(%)
10−3
10−3
10
10−2
1
10
Po (W)
Po (W)
(1) VCC = 6 V.
(1) VCC = 6 V.
(2) VCC = 7.5 V.
(2) VCC = 7.5 V.
(3) VCC = 9 V.
(3) VCC = 9 V.
(4) VCC = 12 V.
a. RL = 8 Ω; f = 1 kHz; Gv = 20 dB
b. RL = 16 Ω; f = 1 kHz; Gv = 20 dB
Fig 13. THD+N versus output power
002aac286
4
Po
(W)
(3)
3
(2)
2
1
(1)
0
0
4
8
12
VCC (V)
THD+N = 10 %; f = 1 kHz; Gv = 20 dB.
(1) RL = 4 Ω.
(2) RL = 8 Ω.
(3) RL = 16 Ω.
Fig 14. Output power versus VCC
SA58632_2
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 4 March 2010
14 of 28
SA58632
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
14.4 Single-ended application
Tamb = 25 °C; VCC = 7.5 V; f = 1 kHz; RL = 8 Ω; Gv = 20 dB; audio band-pass 20 Hz to
20 kHz.
The single-ended application diagram is shown in Figure 15.
1 μF
VCC
R2
100 kΩ
R1
INL−
15
17
10
10 kΩ
INL+
VIL
16
14
100 μF
100 nF
OUTL−
C4
470 μF
RL = 8 Ω
C3
47 μF
OUTR−
1 μF
1
R4
100 kΩ
R3
INR−
10 kΩ
INR+
VIR
OUTL+
SA58632
SVR
MODE
BTL/SE
12
11
13
OUTR−
470 μF
RL = 8 Ω
3
2
4
C5
6
20
OUTR+
7
GND
002aac091
Gain left = R2
------R1
Gain right = R4
------R3
Pins 8, 9, 18 and 19 connected to ground.
Fig 15. SE application circuit configuration
If the BTL/SE pin is to ground, the positive outputs (OUTL+, OUTR+) will be in mute
condition with a DC level of 0.5VCC. When a headphone is used (RL > 25 Ω) the SE
headphone application can be used without coupling capacitors by placing the load
between negative output and one of the positive outputs (for example, pin 1) as the
common pin.
Increasing the value of the tantalum or electrolytic capacitor C3 will result in a better
channel separation. Because the positive output is not designed for high output current
(2 × IO) at the load impedance (< 16 Ω), the SE application with output capacitors
connected to ground is advised. The capacitor value of C4/C5 in combination with the
load impedance determines the low frequency behavior. The total harmonic
distortion-plus-noise as a function of frequency was measured with a low-pass filter of
80 kHz. The value of the capacitor C3 influences the behavior of the PSRR at low
frequencies; increasing the value of C3 increases the performance of PSRR.
SA58632_2
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 4 March 2010
15 of 28
SA58632
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
002aac290
102
THD+N
(%)
THD+N
(%)
(1) (2) (3)
10
002aac291
10
(1) (2)
(3)
1
1
10−1
10−1
10−2
10−2
10−1
1
10−2
10−2
10
10−1
Po (W)
1
10
Po (W)
(1) VCC = 7.5 V.
(1) VCC = 9 V.
(2) VCC = 9 V.
(2) VCC = 12 V.
(3) VCC = 12 V.
(3) VCC = 15 V.
a. RL = 4 Ω; f = 1 kHz; Gv = 10 dB
b. RL = 8 Ω; f = 1 kHz; Gv = 10 dB
002aac292
102
THD+N
(%)
(1) (2) (3)
10
1
10−1
10−2
10−2
10−1
1
10
Po (W)
(1) VCC = 9 V.
(2) VCC = 12 V.
(3) VCC = 15 V.
c. RL = 16 Ω; f = 1 kHz; Gv = 10 dB
Fig 16. THD+N versus output power
SA58632_2
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 4 March 2010
16 of 28
SA58632
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
002aac093
10
002aac094
−20
αcs
(dB)
THD+N
(%)
(1)
−40
1
−60
10−1
(2)
(1)
−80
(2)
(3)
(4)
(5)
(3)
10−2
10
102
103
104
105
−100
10
102
103
104
105
f (Hz)
f (Hz)
Po = 0.5 W; Gv = 20 dB.
Vo = 1 V; Gv = 20 dB.
(1) VCC = 7.5 V; RL = 4 Ω.
(1) VCC = 5 V; RL = 32 Ω, to buffer.
(2) VCC = 9 V; RL = 8 Ω.
(2) VCC = 7.5 V; RL = 4 Ω.
(3) VCC = 12 V; RL = 16 Ω.
(3) VCC = 9 V; RL = 8 Ω.
(4) VCC = 12 V; RL = 16 Ω.
(5) VCC = 5 V; RL = 32 Ω.
Fig 17. THD+N versus frequency
Fig 18. Channel separation versus frequency
002aac095
−20
PSRR
(dB)
002aac096
2.0
Po
(W)
1.6
−40
(1)
(2)
(3)
1.2
(1)
0.8
(2)
−60
(3)
−80
10
102
103
0.4
104
105
0
0
4
Rs = 0 Ω; Vripple = 100 mV.
(1) RL = 4 Ω.
(2) Gv = 20 dB.
(2) RL = 8 Ω.
(3) Gv = 0 dB.
(3) RL = 16 Ω.
16
Fig 20. Po versus VCC
SA58632_2
Product data sheet
12
THD+N = 10 %.
(1) Gv = 24 dB.
Fig 19. PSRR versus frequency
8
VCC (V)
f (Hz)
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 4 March 2010
17 of 28
SA58632
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
002aac097
4
P
(W)
(2)
3
(1)
(3)
2
1
0
0
4
8
12
16
VCC (V)
THD+N = 10 %.
(1) RL = 4 Ω.
(2) RL = 8 Ω.
(3) RL = 16 Ω.
Fig 21. Worst case power dissipation versus VCC
SA58632_2
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 4 March 2010
18 of 28
SA58632
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
002aac293
3
P
(W)
002aac294
3
P
(W)
(3)
(3)
2
2
(2)
(2)
(1)
1
(1)
1
0
0
0
0.4
0.8
1.2
0
1.6
0.8
1.6
2.4
Po (W)
Po (W)
(1) VCC = 7.5 V.
(1) VCC = 9 V.
(2) VCC = 9 V.
(2) VCC = 12 V.
(3) VCC = 12 V.
(3) VCC = 15 V.
a. RL = 4 Ω; f = 1 kHz; Gv = 10 dB
b. RL = 8 Ω; f = 1 kHz; Gv = 10 dB
002aac295
1.6
P
(W)
(3)
1.2
(2)
0.8
(1)
0.4
0
0
0.4
0.8
1.2
1.6
Po (W)
(1) VCC = 9 V.
(2) VCC = 12 V.
(3) VCC = 15 V.
c. RL = 16 Ω; f = 1 kHz; Gv = 10 dB
Fig 22. Power dissipation versus output power
14.5 General remarks
The frequency characteristics can be adapted by connecting a small capacitor across the
feedback resistor. To improve the immunity of HF radiation in radio circuit applications, a
small capacitor can be connected in parallel with the feedback resistor (56 kΩ); this
creates a low-pass filter.
14.6 SA58632BS PCB demo
The application demo board may be used for evaluation in either BTL or SE configuration
as shown in the schematics in Figure 3 and Figure 15. The demo PCB is laid out for a
64.5 mm2 (10 in2) heat spreader (total of top and bottom heat spreader area).
SA58632_2
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 4 March 2010
19 of 28
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx
xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx
xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx
NXP Semiconductors
SA58632_2
Product data sheet
SA58632BS Rev5
Audio Amplifier
VCC
100 μF
GND
OUTL−
OUTL+
10 kΩ
10 kΩ
INL−
Rev. 02 — 4 March 2010
GND VCC/2 VCC
OUTR+
GND
1 μF
11 kΩ
11 kΩ
VCC SEL GND
BTL/SE
MODE
1 μF
1 μF
56 kΩ
47 μF
56 kΩ
INR−
1 μF
OUTR−
SA58632
20 of 28
© NXP B.V. 2010. All rights reserved.
Fig 23. SA58632BS PCB demo
2 × 2.2 W BTL audio amplifier
001aae327
SA58632
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
15. Package outline
HVQFN20: plastic thermal enhanced very thin quad flat package; no leads;
20 terminals; body 6 x 5 x 0.85 mm
B
D
SOT910-1
A
terminal 1
index area
A
E
A1
c
detail X
e1
1/2 e
v
w
b
e
7
10
C
C A B
C
M
M
y1 C
y
L
6
11
e
e2
Eh
1/2 e
1
16
terminal 1
index area
20
17
X
Dh
2.5
0
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max
A1
b
c
D
Dh
E
Eh
e
e1
e2
L
v
w
y
y1
mm
1
0.05
0.00
0.4
0.3
0.2
5.1
4.9
3.15
2.85
6.1
5.9
4.15
3.85
0.8
2.4
4
0.65
0.40
0.1
0.05
0.05
0.1
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
JEITA
SOT910-1
---
MO-220
---
EUROPEAN
PROJECTION
ISSUE DATE
05-10-11
Fig 24. Package outline SOT910-1 (HVQFN20)
SA58632_2
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 4 March 2010
21 of 28
SA58632
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
16. Soldering of SMD packages
This text provides a very brief insight into a complex technology. A more in-depth account
of soldering ICs can be found in Application Note AN10365 “Surface mount reflow
soldering description”.
16.1 Introduction to soldering
Soldering is one of the most common methods through which packages are attached to
Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both
the mechanical and the electrical connection. There is no single soldering method that is
ideal for all IC packages. Wave soldering is often preferred when through-hole and
Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not
suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high
densities that come with increased miniaturization.
16.2 Wave and reflow soldering
Wave soldering is a joining technology in which the joints are made by solder coming from
a standing wave of liquid solder. The wave soldering process is suitable for the following:
• Through-hole components
• Leaded or leadless SMDs, which are glued to the surface of the printed circuit board
Not all SMDs can be wave soldered. Packages with solder balls, and some leadless
packages which have solder lands underneath the body, cannot be wave soldered. Also,
leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered,
due to an increased probability of bridging.
The reflow soldering process involves applying solder paste to a board, followed by
component placement and exposure to a temperature profile. Leaded packages,
packages with solder balls, and leadless packages are all reflow solderable.
Key characteristics in both wave and reflow soldering are:
•
•
•
•
•
•
Board specifications, including the board finish, solder masks and vias
Package footprints, including solder thieves and orientation
The moisture sensitivity level of the packages
Package placement
Inspection and repair
Lead-free soldering versus SnPb soldering
16.3 Wave soldering
Key characteristics in wave soldering are:
• Process issues, such as application of adhesive and flux, clinching of leads, board
transport, the solder wave parameters, and the time during which components are
exposed to the wave
• Solder bath specifications, including temperature and impurities
SA58632_2
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 4 March 2010
22 of 28
SA58632
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
16.4 Reflow soldering
Key characteristics in reflow soldering are:
• Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to
higher minimum peak temperatures (see Figure 25) than a SnPb process, thus
reducing the process window
• Solder paste printing issues including smearing, release, and adjusting the process
window for a mix of large and small components on one board
• Reflow temperature profile; this profile includes preheat, reflow (in which the board is
heated to the peak temperature) and cooling down. It is imperative that the peak
temperature is high enough for the solder to make reliable solder joints (a solder paste
characteristic). In addition, the peak temperature must be low enough that the
packages and/or boards are not damaged. The peak temperature of the package
depends on package thickness and volume and is classified in accordance with
Table 8 and 9
Table 8.
SnPb eutectic process (from J-STD-020C)
Package thickness (mm)
Package reflow temperature (°C)
Volume (mm3)
< 350
≥ 350
< 2.5
235
220
≥ 2.5
220
220
Table 9.
Lead-free process (from J-STD-020C)
Package thickness (mm)
Package reflow temperature (°C)
Volume (mm3)
< 350
350 to 2000
> 2000
< 1.6
260
260
260
1.6 to 2.5
260
250
245
> 2.5
250
245
245
Moisture sensitivity precautions, as indicated on the packing, must be respected at all
times.
Studies have shown that small packages reach higher temperatures during reflow
soldering, see Figure 25.
SA58632_2
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 4 March 2010
23 of 28
SA58632
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
maximum peak temperature
= MSL limit, damage level
temperature
minimum peak temperature
= minimum soldering temperature
peak
temperature
time
001aac844
MSL: Moisture Sensitivity Level
Fig 25. Temperature profiles for large and small components
For further information on temperature profiles, refer to Application Note AN10365
“Surface mount reflow soldering description”.
17. Abbreviations
Table 10.
Abbreviations
Acronym
Description
BTL
Bridge-Tied Load
CMOS
Complementary Metal Oxide Semiconductor
DAP
Die Attach Paddle
ESD
ElectroStatic Discharge
NPN
Negative-Positive-Negative
PCB
Printed-Circuit Board
PNP
Positive-Negative-Positive
RMS
Root Mean Squared
SE
Single-Ended
THD
Total Harmonic Distortion
SA58632_2
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 4 March 2010
24 of 28
SA58632
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
18. Revision history
Table 11.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
SA58632_2
20100304
Product data sheet
-
SA58632_1
Modifications:
SA58632_1
•
The format of this data sheet has been redesigned to comply with the new identity guidelines of
NXP Semiconductors.
•
•
Legal texts have been adapted to the new company name where appropriate.
Table 6 “Static characteristics”: Min. value for VI(BTL) changed from “2 V” to “0.42 × VCC”.
20060627
Product data sheet
SA58632_2
Product data sheet
-
-
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 4 March 2010
25 of 28
SA58632
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
19. Legal information
19.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
19.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
19.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application/use or the application/use of customer’s third party
customer(s) (hereinafter both referred to as “Application”). It is customer’s
sole responsibility to check whether the NXP Semiconductors product is
suitable and fit for the Application planned. Customer has to do all necessary
testing for the Application in order to avoid a default of the Application and the
product. NXP Semiconductors does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
SA58632_2
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 4 March 2010
26 of 28
SA58632
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
19.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
20. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
SA58632_2
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 4 March 2010
27 of 28
SA58632
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
21. Contents
1
2
3
4
5
6
7
7.1
7.2
8
8.1
8.2
8.3
9
10
11
12
13
13.1
14
14.1
14.2
14.3
14.4
14.5
14.6
15
16
16.1
16.2
16.3
16.4
17
18
19
19.1
19.2
19.3
19.4
20
21
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pinning information . . . . . . . . . . . . . . . . . . . . . . 4
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4
Functional description . . . . . . . . . . . . . . . . . . . 5
Power amplifier . . . . . . . . . . . . . . . . . . . . . . . . . 5
Mode select pin (MODE) . . . . . . . . . . . . . . . . . 5
BTL/SE output configuration. . . . . . . . . . . . . . . 5
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 6
Thermal characteristics . . . . . . . . . . . . . . . . . . 6
Static characteristics. . . . . . . . . . . . . . . . . . . . . 6
Dynamic characteristics . . . . . . . . . . . . . . . . . . 7
Application information. . . . . . . . . . . . . . . . . . . 8
BTL application . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9
Static characterization. . . . . . . . . . . . . . . . . . . . 9
BTL dynamic characterization . . . . . . . . . . . . 10
Thermal behavior . . . . . . . . . . . . . . . . . . . . . . 11
Single-ended application . . . . . . . . . . . . . . . . 15
General remarks . . . . . . . . . . . . . . . . . . . . . . . 19
SA58632BS PCB demo . . . . . . . . . . . . . . . . . 19
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 21
Soldering of SMD packages . . . . . . . . . . . . . . 22
Introduction to soldering . . . . . . . . . . . . . . . . . 22
Wave and reflow soldering . . . . . . . . . . . . . . . 22
Wave soldering . . . . . . . . . . . . . . . . . . . . . . . . 22
Reflow soldering . . . . . . . . . . . . . . . . . . . . . . . 23
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 25
Legal information. . . . . . . . . . . . . . . . . . . . . . . 26
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 26
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Contact information. . . . . . . . . . . . . . . . . . . . . 27
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 4 March 2010
Document identifier: SA58632_2
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