Comparing Toshiba TC58NVG0S3E with Macronix MX30LF1G08AA

APPLICATION NOTE
Comparing Toshiba TC58NVG0S3Exxxx
with Macronix MX30LF1G08AA
1. Introduction
This application note is to compare the Toshiba® TC58NVG0S3Exxxx with Macronix MX30LF1G08AA,
3V 1Gb SLC NAND Flash. The document does not provide detailed information on the individual
devices, but highlights the similarities and differences between them. The comparison covers the general
features, performance, command codes and other differences.
The information provided is based on the data available at the time the document was released. The
Toshiba® TC58NVG0S3Exxxx and Macronix MX30LF1G08AA datasheets may override this application
note if there is a different description for the same specification in the datasheets.
2. General Feature Comparison
The table below compares the general features of the two NAND devices. Basically, the main features
are the same except for some differences which are highlighted in yellow.
Brand
Toshiba®
Macronix
TC58NVG0S3Exxxx
MX30LF1G08AA
2.7V-3.6V
2.7V-3.6V
x8
-40°C to 85°C
x8
-40°C to 85°C
(128M+4M) x 8bit
(128M+4M) x 8bit
Page Size
(2K+64)B
(2K+ 64)B
Block Size
(128K +4K)B
(128K+4K)B
(2K+64)B
(2K+64)B
Yes
No
Yes
1b/512B
No
1b/528B
Data Retention
Not Specified
10Y
Endurance
Not Specified
100K
48TSOP (12x20mm)
63-TFBGA (9x11mm)
48TSOP (12x20mm)
63-VFBGA (9x11mm)
Part Name
Voltage
Bus Width
Operating Temperature
Memory Cell Array
Cache Read/Program
Two Plane Read/Program
Page Copy
ECC
Package
Publication Number: AN161V3
1
Issued: Apr. 18, 2016
APPLICATION NOTE
3. Main Performance Comparison
There are some minor performance differences between the two devices. The system might need to
consider the following parameter tolerances while using both devices.
Brand
Part Name
Performance
Access Time
Program Time
Erase Time
Power
Consumption
Random
Sequential
Page Program
Cache Program
Block
Standby (TTL)
Standby (CMOS)
Active Read
Active Write
Input Leakage
Output Leakage
Toshiba®
Macronix
TC58NVG0S3E
Min.
Typ.
Max.
25us
MX30LF1G08AA
Min.
Typ.
Max.
25us
25ns
300us
2.5ms
700us
700us
10ms
N/A
50uA
30mA
30mA
± 10uA
± 10uA
4 cycles
Partial PGM Cycle
Publication Number: AN161V3
30ns
2
250us
4us
2ms
10uA
15mA
15mA
700us
700us
3ms
1mA
50uA
30mA
30mA
± 10uA
± 10uA
4 cycles
Issued: Apr. 18, 2016
APPLICATION NOTE
4. Command Set Comparison
The differences are highlighted in yellow in the table below.
Brand
Part Name
Command
READ page
Read ID
Reset
Page Program
Block Erase
Read Status Register
Serial Data Input (*redundant, has
already been combined with other
command)
Random Data Input
Random Read Data Output
Cache Program
Cache Read Start
Cache Read Exit
Multi-plane Page Program
Read for Page Copy (2) with Data
Out
Auto Program with Data Cache
during Page Copy (2)
Auto Program for Last Page during
Page Copy (2)
Status Read for Multi-Page
Program or Multi Block Erase
Publication Number: AN161V3
Toshiba®
Macronix
TC58NVG0S3E
MX30LF1G08AA
1st cmd cycle 2nd cmd cycle 1st cmd cycle 2nd cmd cycle
00h
30h
00h
30h
90h
90h
FFh
FFh
80h
10h
80h
10h
60h
D0h
60h
D0h
70h
70h
80h
-
-
-
85h
05h
80h
31h
3Fh
80h
81h
81h
E0h
15h
11h
15h
10h
85h
05h
80h
00h
34h
-
E0h
15h
31h
-
00h
3Ah
-
-
8Ch
15h
-
-
8Ch
10h
-
-
71h
-
-
-
3
Issued: Apr. 18, 2016
APPLICATION NOTE
5. Status Register Comparison
The main key register bits are compatible. However, the TC58NVG0S3E provides additional status
register bits (read with the 71h command) to indicate the two-plane operation status, which the
MX30LF1G08AA does not support and is not specified in this article.
Brand
Toshiba®
Macronix
Part Name
TC58NVG0S3E
MX30LF1G08AA
SR[0]
Program/Erase pass or fail
Program/Erase pass or fail
SR[1]
Cache program pass or fail
Cache program pass or fail
SR[2]
Not Used
Not Used
SR[3]
Not Used
Not Used
SR[4]
Not Used
SR[5]
Ready/Busy
SR[6]
Data Cache Ready/Busy
Not Used
Ready/Busy for internal controller
operation
Ready/Busy
SR[7]
Write Protect
Write Protect
6. Package Pin/Ball Definition Comparison
The physical dimensions are similar to each other. For detailed information, please refer to the
individual datasheets. The table below shows that only 1 pin/ball definition is different between the
devices. DNU means “Do Not Use” in the Macronix pin/ball definition, and the pin/ball should not
be connected to any signal or power trace on the board. The functions of the TC58NVG0S3E and
MX30LF1G08AA I/O pins are the same but their naming is different. The TC58NVG0S3E has its I/O
pins named IO1 to IO8. Whereas the MX30LF1G08AA has its I/O pins named IO0 to IO7.
Brand
Toshiba®
Macronix
Part Name
TC58NVG0S3E
MX30LF1G08AA
NC
DNU
NC
DNU
TSOP
#35 pin
FBGA
#G3
Publication Number: AN161V3
4
Issued: Apr. 18, 2016
APPLICATION NOTE
7. Device Identification Comparison
The lengths of the device ID for the TC58NVG0S3E and MX30LF1G08AA differ by one byte. The ID of
the Toshiba® TC58NVG0S3E begins with a one-byte manufacturer code followed by a four-byte device
ID. The ID of the Macronix MX30LF1G08AA begins with a one-byte manufacturer code followed by a
three-byte device ID. See the table below.
Brand
Part Name
Device ID
Toshiba®
Macronix
TC58NVG0S3E
98h / D1h / (See Note)
MX30LF1G08AA
C2h / F1h / 80h / 1Dh
1st byte
Manufacturer code
Manufacturer code
2nd byte
Device ID
Device ID
bit 1 - 0
Die number
Die number
bit 3 - 2
Cell Structure
Cell Structure
bit 5 - 4
not defined
bit 6
not defined
bit 7
not defined
Cache program
bit 1- 0
Page size
Page size
bit 2
not defined
Size of spare area
bit 7, 3
not defined
bit 5 - 4
Block Size (exclude spare
area)
Sequential Read Cycle
Time
Block Size (exclude spare
area)
bit 6
not defined
Organization
bit 1 - 0
not defined
N/A
bit 3 - 2
Plane Number
N/A
bit 6 - 4
not defined
N/A
bit 7
not defined
N/A
x8
3rd byte
Device ID
Definition
4th byte
5th byte
Number of concurrently
programmed pages
Interleaved programming
between diverse devices
Note: The 3rd to 5th bytes of Toshiba ID do not specify a certain value.
Publication Number: AN161V3
5
Issued: Apr. 18, 2016
APPLICATION NOTE
8. Summary
The Macronix MX30LF1G08AA is highly compatible with the Toshiba® TC58NVG0S3E device, but the
two devices have some specification differences. Please refer to the individual datasheets for details.
9. References
The following datasheets were used for preparing this comparison note:
Datasheet
Location
Date Issued
Version
MX30LF1G08AA
Macronix Website
Sept. 2014
1.5
TC58NVG0S3ETA00
Website
Mar. 2011
1.08
TC58NVG0S3EBAI4
Website
Mar. 2011
1.60
For more functional and parametric specifications, please refer to the datasheet on the Macronix
Website at http://www.macronix.com/ and go to: Products/ NAND Flash/ SLC NAND.
10. Revision History
Revision No.
Description
Page
Date
ALL
May 23, 2012
REV. 1
Initial Release
REV. 2
1. Typo corrections
2. Updated datasheet version
5
6
May 15, 2014
REV. 3
Title modifications
1
Apr. 18, 2016
Publication Number: AN161V3
6
Issued: Apr. 18, 2016
APPLICATION NOTE
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and not for use in any applications which may, directly or indirectly, cause death, personal injury, or severe property damages.
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such as Macronix, MXIC, MXIC Logo, MX Logo, Integrated Solutions Provider, NBit, Nbit, NBiit, Macronix NBit, eLiteFlash,
HybridNVM, HybridFlash, XtraROM, Phines, KH Logo, BE-SONOS, KSMC, Kingtech, MXSMIO, Macronix vEE, Macronix
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MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice.
Publication Number: AN161V3
7
Issued: Apr. 18, 2016
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