IRF7380TRPbF-1
HEXFET® Power MOSFET
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
ID
80
V
73
15
S1
1
8
D1
mΩ
G1
2
7
D1
nC
S2
3
6
D2
G2
4
5
D2
3.6
(@TA = 25°C)
A
SO-8
Top View
Applications
l High frequency DC-DC converters
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Base Part Number
Package Type
IRF7380PbF-1
SO-8
⇒
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRF7380TRPbF-1
Absolute Maximum Ratings
Parameter
Max.
Units
80
V
VDS
Drain-to-Source Voltage
VGS
ID @ TA = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
± 20
3.6
ID @ TA = 100°C
Continuous Drain Current, VGS @ 10V
2.9
IDM
Pulsed Drain Current
PD @TA = 25°C
Maximum Power Dissipation
c
Linear Derating Factor
A
29
h
dv/dt
TJ
Peak Diode Recovery dv/dt
Operating Junction and
TSTG
Storage Temperature Range
2.0
W
0.02
W/°C
2.3
-55 to + 150
V/ns
°C
Thermal Resistance
Parameter
R θJL
Junction-to-Drain Lead
R θJA
Junction-to-Ambient (PCB Mount)
Notes
1
f
Typ.
Max.
Units
–––
42
°C/W
–––
62.5
through are on page 9
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IRF7380TRPbF-1
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Drain-to-Source Breakdown Voltage
80
–––
–––
ΔV(BR)DSS/ΔTJ
Breakdown Voltage Temp. Coefficient
–––
0.09
–––
V/°C Reference to 25°C, I D = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
61
73
mΩ VGS = 10V, ID = 2.2A
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
IDSS
Drain-to-Source Leakage Current
–––
–––
20
μA
–––
–––
250
Gate-to-Source Forward Leakage
–––
–––
200
Gate-to-Source Reverse Leakage
–––
–––
-200
IGSS
V
Conditions
V(BR)DSS
VGS = 0V, ID = 250μA
e
VDS = VGS, ID = 250μA
VDS = 80V, VGS = 0V
VDS = 64V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
S
Conditions
gfs
Forward Transconductance
4.3
–––
–––
Qg
Total Gate Charge
–––
15
23
VDS = 25V, ID = 2.2A
Qgs
Gate-to-Source Charge
–––
2.9
–––
nC VDS = 40V
Qgd
Gate-to-Drain ("Miller") Charge
–––
4.5
–––
VGS = 10V
td(on)
Turn-On Delay Time
–––
9.0
–––
VDD = 40V
tr
Rise Time
–––
10
–––
ID = 2.2A
td(off)
Turn-Off Delay Time
–––
41
–––
tf
Fall Time
–––
17
–––
VGS = 10V
Ciss
Input Capacitance
–––
660
–––
VGS = 0V
Coss
Output Capacitance
–––
110
–––
Crss
Reverse Transfer Capacitance
–––
15
–––
Coss
Output Capacitance
–––
710
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
72
–––
VGS = 0V, VDS = 64V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
140
–––
VGS = 0V, VDS = 0V to 64V
ID = 2.2A
ns
RG = 24Ω
e
e
VDS = 25V
pF
ƒ = 1.0MHz
g
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
c
Typ.
d
Max.
Units
–––
75
mJ
–––
2.2
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
trr
Reverse Recovery Time
–––
50
Qrr
Reverse Recovery Charge
–––
110
–––
nC di/dt = 100A/μs
ton
Forward Turn-On Time
c
2
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–––
–––
–––
–––
3.6
Conditions
IS
A
MOSFET symbol
A
showing the
integral reverse
1.3
V
p-n junction diode.
TJ = 25°C, IS = 2.2A, VGS = 0V
–––
ns
TJ = 25°C, IF = 2.2A, VDD = 40V
29
D
G
S
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS +LD)
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IRF7380TRPbF-1
100
100
10
BOTTOM
1
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
7.0V
5.0V
4.5V
4.3V
4.0V
3.7V
3.7V
0.1
0.01
10
BOTTOM
3.7V
1
20μs PULSE WIDTH
Tj = 150°C
20μs PULSE WIDTH
Tj = 25°C
0.1
0.001
0.1
1
10
100
0.1
1000
1
Fig 1. Typical Output Characteristics
RDS(on), Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (Α)
2.5
10
T J = 150°C
T J = 25°C
VDS = 15V
20μs PULSE WIDTH
0
3.0
4.0
5.0
6.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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100
1000
Fig 2. Typical Output Characteristics
100
1
10
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
3
VGS
15V
10V
7.0V
5.0V
4.5V
4.3V
4.0V
3.7V
7.0
I D = 3.6A
2.0
1.5
1.0
0.5
V GS = 10V
0.0
-60
-40
-20
0
20
40
60
80
100
120
TJ, Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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October 16, 2014
140
160
IRF7380TRPbF-1
100000
VGS , Gate-to-Source Voltage (V)
10000
Coss = Cds + Cgd
1000
Ciss
C oss
100
Crss
10
ID= 2.1A
VDS= 16V
8
6
4
2
0
1
10
100
0
2
VDS, Drain-to-Source Voltage (V)
4
6
8
10
12
14
16
Q G Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
ID, Drain-to-Source Current (A)
100
10
T J= 25 ° C
TJ = 150 ° C
1
V GS = 0 V
0.1
0.0
0.5
1.0
1.5
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
VDS= 64V
VDS= 40V
10
1
ISD, Reverse Drain Current (A)
C, Capacitance(pF)
12
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
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OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100μsec
1
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
2.0
1
10msec
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7380TRPbF-1
4.0
RD
VDS
VGS
ID , Drain Current (A)
3.0
D.U.T.
RG
+
-V DD
10V
2.0
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
1.0
VDS
90%
0.0
25
50
75
100
125
150
TA , Ambient Temperature (°C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
(Z thJA )
100
D = 0.50
0.20
10
Thermal Response
0.10
0.05
P DM
0.02
1
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
2. Peak T
0.1
0.00001
0.0001
0.001
0.01
0.1
t1/ t 2
J = P DM x Z thJA
1
+T A
10
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
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100
RDS(on) , Drain-to -Source On Resistance (m Ω)
IRF7380TRPbF-1
RDS (on) , Drain-to-Source On Resistance (mΩ)
95
90
85
80
VGS = 10V
75
70
65
60
55
50
0
5
10
15
20
25
30
800
700
600
500
400
300
ID = 3.6A
200
100
0
3.0
ID , Drain Current (A)
5.0
7.0
9.0
11.0
13.0
15.0
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
QGS
.3μF
D.U.T.
+
V
- DS
QGD
200
VG
EAS, Single Pulse Avalanche Energy (mJ)
50KΩ
.2μF
12V
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V(BR)DSS
tp
L
VDS
D.U.T
RG
IAS
20V
I AS
tp
DRIVER
+
V
- DD
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160
BOTTOM
ID
1.0A
1.8A
2.2A
120
80
40
0
25
50
75
100
125
Starting TJ, Junction Temperature (°C)
0.01Ω
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
A
TOP
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
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150
IRF7380TRPbF-1
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
D
DIM
B
5
A
8
6
7
6
H
E
1
2
3
0.25 [.010]
4
A
MIN
.0532
.0688
1.35
1.75
A1 .0040
e
e1
8X b
0.25 [.010]
A
MAX
0.25
.0098
0.10
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BAS IC
1.27 BASIC
.025 BAS IC
0.635 BAS IC
e1
6X
MILLIMETERS
MAX
A
5
INCHES
MIN
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
C
A1
y
0.10 [.004]
8X c
8X L
7
C A B
FOOT PRINT
NOT ES:
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
2. CONT ROLLING DIMENSION: MILLIMET ER
8X 0.72 [.028]
3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O
A S UBS T RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information
EXAMPLE: T HIS IS AN IRF7101 (MOSFET)
INT ERNATIONAL
RECTIFIER
LOGO
XXXX
F 7101
DAT E CODE (YWW)
P = DIS GNATES LEAD - FREE
PRODUCT (OPT IONAL)
Y = LAST DIGIT OF THE YEAR
WW = WEEK
A = AS S EMBLY S ITE CODE
LOT CODE
PART NUMBER
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
7
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IRF7380TRPbF-1
SO-8 Tape and Reel (Dimensions are shown in millimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at:http://www.irf.com/package/
8
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IRF7380TRPbF-1
†
Qualification information
Industrial
Qualification level
(per JEDE C JE S D47F
Moisture Sensitivity Level
SO-8
RoHS compliant
††
guidelines)
MS L1
††
(per JEDE C J-S T D-020D )
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 31mH, RG = 25Ω, IAS = 2.2A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
ISD ≤ 2.2A, di/dt ≤ 220A/μs, VDD ≤ V(BR)DSS,TJ ≤ 150°C.
Revision History
Date
10/16/2014
Comments
• Corrected part number from" IRF7380PbF-1" to "IRF7380TRPbF-1" -all pages
• Removed the "IRF7380PbF-1" bulk part number from ordering information on page1
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
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