IRF7478PbF-1
SMPS MOSFET
HEXFET® Power MOSFET
VDS
60
RDS(on) max
(@VGS = 10V)
RDS(on) max
(@VGS = 4.5V)
Qg (typical)
ID
(@TA = 25°C)
V
26
mΩ
30
21
nC
7.0
A
A
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
SO-8
Top View
Applications
l
High frequency DC-DC converters
Features
Benefits
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Base Part Number
Package Type
IRF7478PbF-1
SO-8
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
⇒
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part
Number
IRF7478PbF-1
IRF7478TRPbF-1
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Units
7.0
5.6
56
2.5
0.02
± 20
3.7
-55 to + 150
A
W
W/°C
V
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
20
50
°C/W
Notes through are on page 8
1
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IRF7478PbF-1
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
60
–––
–––
–––
1.0
–––
–––
–––
–––
Typ.
–––
0.065
20
23
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250μA
––– V/°C Reference to 25°C, ID = 1mA
26
VGS = 10V, ID = 4.2A
mΩ
30
VGS = 4.5V, ID = 3.5A
3.0
V
VDS = VGS, ID = 250μA
20
VDS = 48V, VGS = 0V
μA
100
VDS = 48V, VGS = 0V, TJ = 125°C
100
VGS = 20V
nA
-100
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Symbol
EAS
IAR
Min.
17
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
21
4.3
9.6
7.7
2.6
44
13
1740
300
37
1590
220
410
Max. Units
Conditions
–––
S
VDS = 50V, ID = 4.2A
31
ID = 4.2A
–––
nC
VDS = 48V
–––
VGS = 4.5V
–––
VDD = 30V
–––
ID = 4.2A
ns
–––
RG = 6.2Ω
–––
VGS = 10V
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 48V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 0V to 48V
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
Max.
Units
–––
–––
140
4.2
mJ
A
Diode Characteristics
IS
ISM
VSD
trr
Qrr
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
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Min. Typ. Max. Units
–––
–––
2.3
A
–––
–––
56
–––
–––
–––
–––
52
100
1.3
78
150
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 4.2A, VGS = 0V
TJ = 25°C, IF = 4.2A
di/dt = 100A/μs
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D
S
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IRF7478PbF-1
100
100
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
10
2.7V
20μs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
10
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (Α)
T J = 150°C
10
T J = 25°C
VDS = 25V
20μs PULSE WIDTH
3.0
3.5
Fig 3. Typical Transfer Characteristics
3
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1
10
100
Fig 2. Typical Output Characteristics
100
VGS, Gate-to-Source Voltage (V)
20μs PULSE WIDTH
TJ = 150 °C
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1
2.7V
1
0.1
100
VDS , Drain-to-Source Voltage (V)
2.5
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
4.0
ID = 7.0A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRF7478PbF-1
100000
VGS , Gate-to-Source Voltage (V)
Coss = Cds + Cgd
10000
C, Capacitance(pF)
10
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Ciss
1000
Coss
100
Crss
10
6
4
2
0
100
0
20
30
40
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 150 ° C
100
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
10
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
10
1
TJ = 25 ° C
0.1
0.2
V GS = 0 V
0.6
1.0
1.4
1.8
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
VDS = 48V
VDS = 30V
VDS = 12V
8
10
1
ID = 4.2A
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2.2
10us
10
100us
1ms
1
0.1
10ms
TA = 25 ° C
TJ = 150 ° C
Single Pulse
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7478PbF-1
8.0
VDS
VGS
ID , Drain Current (A)
6.0
RD
D.U.T.
RG
+
-V DD
10V
4.0
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
2.0
VDS
90%
0.0
25
50
75
100
125
TC , Case Temperature ( °C)
150
10%
VGS
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.01
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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0.028
RDS(on) , Drain-to -Source On Resistance ( Ω)
RDS (on) , Drain-to-Source On Resistance ( Ω)
IRF7478PbF-1
0.026
0.024
VGS = 4.5V
0.022
0.020
0.018
VGS = 10V
0.016
0
10
20
30
40
50
0.04
0.03
ID = 7.0A
0.02
0.01
60
0.0
ID , Drain Current (A)
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
QGS
.3μF
D.U.T.
+
V
- DS
QGD
EAS , Single Pulse Avalanche Energy (mJ)
50KΩ
.2μF
12V
VG
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V(BR)DSS
tp
L
VDS
DRIVER
D.U.T
RG
IAS
20V
I AS
tp
+
V
- DD
0.01Ω
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
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A
400
TOP
BOTTOM
300
ID
1.9A
3.4A
4.2A
200
100
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
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150
IRF7478PbF-1
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D
5
A
8
6
7
6
5
H
1
6X
2
3
0.25 [.010]
4
A
e
e1
8X b
0.25 [.010]
MILLIMETERS
MIN
MAX
MIN
.0532
.0688
1.35
1.75
A1 .0040
0.25
A
E
INCHES
DIM
B
MAX
.0098
0.10
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
e1
.025 BAS IC
1.27 BASIC
0.635 B AS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
A
C
y
0.10 [.004]
A1
8X L
8X c
7
C A B
FOOT PRINT
NOT ES :
1. DIMENSIONING & T OLERANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENSION: MILLIMET ER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES ].
4. OUTLINE CONFORMS T O JEDEC OUT LINE MS-012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS .
MOLD PROTRUS IONS NOT T O EXCEED 0.15 [.006].
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS .
MOLD PROTRUS IONS NOT T O EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENSION IS T HE LENGTH OF LEAD F OR S OLDERING T O
A S UBST RATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
Y = LAS T DIGIT OF T HE YEAR
WW = WEEK
A = AS S EMBLY S IT E CODE
LOT CODE
PART NUMBER
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
7
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IRF7478PbF-1
SO-8 Tape and Reel (Dimensions are shown in millimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
†
Qualification information
Industrial
Qualification level
(per JEDE C JE S D47F
Moisture Sensitivity Level
SO-8
RoHS compliant
††
guidelines)
MS L1
††
(per JEDE C J-S T D-020D )
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 16mH, RG = 25Ω, IAS = 4.2A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
Coss eff. is a fixed capacitance that gives the same charging time as C oss while VDS is rising from 0 to 80% VDSS
ISD ≤ 4.2A, di/dt ≤ 160A/μs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
8
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November 20, 2013