Darlington Complementary Silicon Power Transistors

TIP131, TIP132 (NPN),
TIP137 (PNP)
Darlington Complementary
Silicon Power Transistors
Designed for general−purpose amplifier and low−speed switching
applications.
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Features
DARLINGTON 8 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
80−100 VOLTS, 70 WATTS
• High DC Current Gain −
•
•
•
•
hFE = 2500 (Typ) @ IC
= 4.0 Adc
Collector−Emitter Sustaining Voltage − @ 30 mAdc
VCEO(sus) = 80 Vdc (Min) − TIP131
= 100 Vdc (Min) − TIP132, TIP137
Low Collector−Emitter Saturation Voltage −
VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc
= 3.0 Vdc (Max) @ IC = 6.0 Adc
Monolithic Construction with Built−In Base−Emitter Shunt Resistors
Pb−Free Packages are Available*
MARKING
DIAGRAM
4
TO−220AB
CASE 221A
STYLE 1
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Symbol
TIP131
TIP132
TIP137
1
Unit
VCEO
80
100
Vdc
Collector−Base Voltage
VCB
80
100
Vdc
Emitter−Base Voltage
VEB
5.0
Vdc
IC
8.0
12
Adc
Base Current
IB
300
mAdc
Total Power Dissipation @ TC = 25°C
PD
70
W
Total Power Dissipation @ TA = 25°C
PD
2.0
W
TJ, Tstg
–65 to +150
°C
Collector Current − Continuous
Peak
Operating and Storage Junction,
Temperature Range
3
TIP13x
x
A
Y
WW
G
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Case
RqJC
1.78
°C/W
Thermal Resistance,
Junction−to−Ambient
RqJA
63.5
°C/W
TIP131
TIP131G
TIP132
TIP132G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
BASE
COLLECTOR
EMITTER
COLLECTOR
= Device Code
= 1, 2, or 7
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
THERMAL CHARACTERISTICS
Characteristic
2
STYLE 1:
PIN 1.
2.
3.
4.
TIP13xG
AYWW
TIP137
TIP137G
Package
Shipping
TO−220
50 Units/Rail
TO−220
(Pb−Free)
50 Units/Rail
TO−220
50 Units/Rail
TO−220
(Pb−Free)
50 Units/Rail
TO−220
50 Units/Rail
TO−220
(Pb−Free)
50 Units/Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2011
September, 2011 − Rev. 3
1
Publication Order Number:
TIP131/D
TIP131, TIP132 (NPN), TIP137 (PNP)
COLLECTOR
PNP
TIP137
COLLECTOR
NPN
TIP131
TIP132
BASE
BASE
≈ 8.0 k
≈ 120
≈ 8.0 k
≈ 120
EMITTER
EMITTER
Figure 1. Darlington Circuit Schematic
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
80
100
−
−
−
−
0.5
0.5
−
−
0.2
0.2
−
5.0
500
1000
−
15000
−
−
2.0
3.0
−
2.5
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0)
TIP131
TIP132, TIP137
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
(VCE = 50 Vdc, IB = 0)
TIP131
TIP132, TIP137
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0)
TIP131
TIP132, TIP137
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
VCEO(sus)
Vdc
ICEO
mAdc
ICBO
IEBO
mAdc
mAdc
ON CHARACTERISTICS (Note 1)
hFE
DC Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc)
(IC = 4.0 Adc, VCE = 4.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 16 mAdc)
(IC = 6.0 Adc, IB = 30 mAdc)
VCE(sat)
Base−Emitter On Voltage
(IC = 4.0 Adc, VCE = 4.0 Vdc)
VBE(on)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
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2
−
Vdc
Vdc
TIP131, TIP132 (NPN), TIP137 (PNP)
PD, POWER DISSIPATION (WATTS)
TA TC
4.0 80
3.0 60
TC
2.0 40
TA
1.0 20
0
0
0
20
40
60
80
100
T, TEMPERATURE (°C)
120
140
160
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
Figure 2. Power Derating
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
P(pk)
ZqJC(t) = r(t) RqJC
RqJC = 1.78°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
READ TIME AT t1
t2
TJ(pk) - TC = P(pk) ZqJC(t)
DUTY CYCLE, D = t1/t2
0.1
0.05
0.07
0.05
0.02
0.03
0.02
0.01
SINGLE PULSE
0.01
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
t, TIME (ms)
10
Figure 3. Thermal Response
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3
20
50
100
200
500 1.0 k
TIP131, TIP132 (NPN), TIP137 (PNP)
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AG
−T−
B
F
T
SEATING
PLANE
C
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
U
1 2 3
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.036
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.91
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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TIP131/D
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