Digital Transistors (BRT) R1 = 4.7 kOHMs, R2 = 10 kOHMs

MMUN2217L,
NSVMMUN2217L
Digital Transistors (BRT)
R1 = 4.7 kW, R2 = 10 kW
NPN Transistors with Monolithic Bias
Resistor Network
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This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
PIN CONNECTIONS
PIN 1
BASE
(INPUT)
PIN 3
COLLECTOR
(OUTPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
Features
•
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
XXX MG
G
SOT−23
CASE 318
STYLE 6
1
XXX
M
G
Specific Device Code
= Date Code*
= Pb−Free Package
Unit
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
Collector−Base Voltage
VCBO
50
Vdc
Collector−Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
Input Forward Voltage
VIN(fwd)
20
Vdc
Input Reverse Voltage
VIN(rev)
7
Vdc
Collector Current − Continuous
MARKING DIAGRAM
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2013
October, 2013 − Rev. 2
1
Publication Order Number:
DTC143X/D
MMUN2217L, NSVMMUN2217L
Table 1. ORDERING INFORMATION
Part Marking
Package
Shipping†
MMUN2217LT1G
A8M
SC−23
(Pb−Free)
3000 / Tape & Reel
NSVMMUN2217LT1G
A8M
SC−23
(Pb−Free)
3000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
PD, POWER DISSIPATION (mW)
300
250
(1) SOT−23; Minimum Pad
200
(1)
150
100
50
0
−50
−25
0
25
50
75
100
125
150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
Table 2. THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
246
400
2.0
3.2
mW
THERMAL CHARACTERISTICS (SOT−23) (MMUN2217L)
Total Device Dissipation
TA = 25°C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
Derate above 25°C
PD
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
RqJA
508
311
°C/W
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
RqJL
174
208
°C/W
TJ, Tstg
−55 to +150
°C
Junction and Storage Temperature Range
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
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2
MMUN2217L, NSVMMUN2217L
Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
−
−
100
−
−
500
−
−
0.5
50
−
−
50
−
−
35
60
−
−
−
0.25
−
0.9
0.3
2.5
2.0
−
−
−
0.2
4.9
−
−
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
Collector−Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
Collector−Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
Collector−Emitter Breakdown Voltage (Note 3)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
nAdc
nAdc
mAdc
Vdc
Vdc
ON CHARACTERISTICS
hFE
DC Current Gain (Note 3)
(IC = 5.0 mA, VCE = 10 V)
Collector *Emitter Saturation Voltage (Note 3)
(IC = 10 mA, IB = 1.0 mA)
VCE(sat)
Input Voltage (off)
(VCE = 5.0 V, IC = 100 mA)
Vi(off)
Input Voltage (on)
(VCE = 0.3 V, IC = 20 mA)
Vi(on)
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
VOL
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOH
Input Resistor
R1
3.3
4.7
6.1
Resistor Ratio
R1/R2
0.38
0.47
0.56
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle v 2%.
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3
Vdc
Vdc
Vdc
Vdc
Vdc
kW
MMUN2217L, NSVMMUN2217L
1
1000
IC/IB = 10
VCE = 10 V
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER VOLTAGE (V)
TYPICAL CHARACTERISTICS
MMUN2217L
25°C
0.1
150°C
−55°C
0.01
0
10
20
30
100
−55°C
10
1
50
40
0
1
10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) vs. IC
100
3.2
2.8
IC, COLLECTOR CURRENT (mA)
f = 10 kHz
IE = 0 A
TA = 25°C
2.4
2
1.6
1.2
0.8
0.4
0
10
20
30
40
50
−55°C
10
25°C
1
0.1
0.01
150°C
VO = 5 V
VR, REVERSE VOLTAGE (V)
2
3
Vin, INPUT VOLTAGE (V)
Figure 4. Output Capacitance
Figure 5. Output Current vs. Input Voltage
0
1
100
Vin, INPUT VOLTAGE (V)
Cob, OUTPUT CAPACITANCE (pF)
100
Figure 3. DC Current Gain
3.6
0
150°C
25°C
10
25°C
−55°C
1
150°C
VO = 0.2 V
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
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4
50
4
5
MMUN2217L, NSVMMUN2217L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
mm Ǔ
ǒinches
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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