Amplifier Transistor PNP

BC327, BC327-16,
BC327-25, BC327-40
Amplifier Transistors
PNP Silicon
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Features
• These are Pb−Free Devices*
COLLECTOR
1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
−45
Vdc
Collector −Emitter Voltage
VCES
−50
Vdc
Emitter−Base Voltage
VEBO
−5.0
Vdc
Collector Current − Continuous
IC
−800
mAdc
Total Power Dissipation @ TA = 25°C
Derate above TA = 25°C
PD
625
5.0
mW
mW/°C
Total Power Dissipation @ TA = 25°C
Derate above TA = 25°C
PD
1.5
12
W
mW/°C
TJ, Tstg
−55 to +150
°C
Operating and Storage Junction
Temperature Range
2
BASE
3
EMITTER
TO−92
CASE 29
STYLE 17
1
12
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
3
STRAIGHT LEAD
BULK PACK
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
BC
xxx
AYWW G
G
BCxxx = Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 4 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2011
September, 2011 − Rev. 6
1
Publication Order Number:
BC327/D
BC327, BC327−16, BC327−25, BC327−40
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
−45
−
−
−50
−
−
−5.0
−
−
−
−
−100
−
−
−100
−
−
−100
100
100
160
250
40
−
−
−
−
−
630
250
400
630
−
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mA, IB = 0)
V(BR)CEO
Collector −Emitter Breakdown Voltage
(IC = −100 mA, IE = 0)
V(BR)CES
Emitter −Base Breakdown Voltage
(IE = −10 mA, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = −30 V, IE = 0)
ICBO
Collector Cutoff Current
(VCE = −45 V, VBE = 0)
ICES
Emitter Cutoff Current
(VEB = −4.0 V, IC = 0)
IEBO
Vdc
Vdc
Vdc
nAdc
nAdc
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = −100 mA, VCE = −1.0 V)
hFE
BC327
BC327−16
BC327−25
BC327−40
(IC = −300 mA, VCE = −1.0 V)
−
Base−Emitter On Voltage
(IC = −300 mA, VCE = −1.0 V)
VBE(on)
−
−
−1.2
Vdc
Collector −Emitter Saturation Voltage
(IC = −500 mA, IB = −50 mA)
VCE(sat)
−
−
−0.7
Vdc
Cob
−
11
−
pF
fT
−
260
−
MHz
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = −10 V, IE = 0, f = 1.0 MHz)
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
Current −Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 V, f = 100 MHz)
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1 0.05
0.07 0.02
0.05
0.03
P(pk)
SINGLE PULSE
0.01
t1
t2
SINGLE PULSE
DUTY CYCLE, D = t1/t2
0.02
0.01
0.001
qJC(t) = (t) qJC
qJC = 100°C/W MAX
qJA(t) = r(t) qJA
qJA = 375°C/W MAX
D CURVES APPLY FOR
POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) qJC(t)
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t, TIME (SECONDS)
1.0
2.0
Figure 1. Thermal Response
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2
5.0
10
20
50
100
BC327, BC327−16, BC327−25, BC327−40
1.0 s
1.0 ms
1000
TJ = 135°C
100 ms
dc
TC = 25°C
dc
TA = 25°C
-100
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
(APPLIES BELOW RATED VCEO)
-10
-1.0
VCE = -1.0 V
TA = 25°C
hFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT (mA)
-1000
-3.0
-10
-30
VCE, COLLECTOR-EMITTER VOLTAGE
100
10
-0.1
-100
-1.0
-10
-100
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
-1.0
-1.0
TA = 25°C
TJ = 25°C
-0.8
-0.8
V, VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. Active Region − Safe Operating Area
IC =
-500 mA
-0.6
-0.4
IC = -300 mA
-0.2
0
-0.01
-0.1
-1.0
-10
IB, BASE CURRENT (mA)
VBE(on) @ VCE = -1.0 V
-0.6
-0.4
VCE(sat) @ IC/IB = 10
0
-1.0
-100
-10
-100
IC, COLLECTOR CURRENT (mA)
-1000
Figure 5. “On” Voltages
100
+1.0
qVC for VCE(sat)
C, CAPACITANCE (pF)
θV, TEMPERATURE COEFFICIENTS (mV/°C)
Figure 4. Saturation Region
0
-1.0
-1.0
VBE(sat) @ IC/IB = 10
-0.2
IC = -100 mA
IC = -10 mA
-2.0
-1000
qVB for VBE
-10
-100
IC, COLLECTOR CURRENT
Cib
10
Cob
1.0
-0.1
-1000
Figure 6. Temperature Coefficients
-1.0
-10
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitances
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3
-100
BC327, BC327−16, BC327−25, BC327−40
ORDERING INFORMATION
Specific Device Marking
Package Type
Shipping†
7
TO−92 Straight Lead
(Pb−Free)
5000 Units / Bulk
BC327RL1G
327
TO−92 Bent Lead
(Pb−Free)
2000 / Tape & Reel
BC327−025G
327
TO−92 Straight Lead
(Pb−Free)
5000 Units / Bulk
BC327−25RL1G
7−25
TO−92 Bent Lead
(Pb−Free)
2000 / Tape & Reel
BC327−25ZL1G
32725
TO−92 Bent Lead
(Pb−Free)
2000 / Tape & Ammo Box
BC327−40ZL1G
7−40
TO−92 Bent Lead
(Pb−Free)
2000 / Tape & Ammo Box
Device Order Number
BC327G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
BC327, BC327−16, BC327−25, BC327−40
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
A
B
STRAIGHT LEAD
BULK PACK
R
P
L
SEATING
PLANE
K
D
X X
G
J
H
V
C
SECTION X−X
N
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---
N
A
R
BENT LEAD
TAPE & REEL
AMMO PACK
B
P
T
SEATING
PLANE
G
K
D
X X
J
V
1
C
N
SECTION X−X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
J
K
N
P
R
V
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
--2.04
2.66
1.50
4.00
2.93
--3.43
---
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
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Phone: 421 33 790 2910
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Phone: 81−3−5773−3850
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5
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
BC327/D
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