150V, 30A SWITCHMODE Power Rectifier

MBRF30H150CTG,
MBR30H150CTG
SWITCHMODE™
Power Rectifier
150 V, 30 A
http://onsemi.com
Features and Benefits
•
•
•
•
•
•
SCHOTTKY BARRIER
RECTIFIER
30 AMPERES, 150 VOLTS
Low Forward Voltage
Low Power Loss/High Efficiency
High Surge Capability
30 A Total (15 A Per Diode Leg)
Guard−Ring for Stress Protection
These are Pb−Free Devices
1
2, 4
3
Applications
• Power Supply − Output Rectification
• Power Management
• Instrumentation
MARKING
DIAGRAMS
Mechanical Characteristics:
•
•
•
•
•
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight (Approximately): 1.9 Grams (TO−220 & TO−220FP)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
AYWW
B30H150G
TO−220 FULLPAK]
AKA
CASE 221D
STYLE 3
1
2
3
4
MAXIMUM RATINGS
Please See the Table on the Following Page
TO−220AB
CASE 221A
STYLE 6
1
2
AYWW
B30H150G
AKA
3
A
Y
WW
B30H150
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Device
= Polarity Designator
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
March, 2010 − Rev. 1
1
Publication Order Number:
MBRF30H150CT/D
MBRF30H150CTG, MBR30H150CTG
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol
Value
Unit
VRRM
VRWM
VR
150
V
IF(AV)
15
30
A
IFSM
200
A
Operating Junction Temperature (Note 1)
TJ
−20 to +150
°C
Storage Temperature
Tstg
−65 to +150
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
> 400
> 8000
V
Symbol
Value
Unit
RqJC
RqJA
RqJC
2.0
45
2.5
Typ
Max
0.69
0.55
0.98
0.68
0.75
0.60
1.11
0.73
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC = 124°C
(Per Leg)
(Per Device)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
ESD Ratings:
Machine Model = C
Human Body Model = 3B
THERMAL CHARACTERISTICS
Rating
Maximum Thermal Resistance
(MBR30H150CTG)
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Case
(MBRF30H150CTG)
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Rating
Symbol
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 5 A, TC = 25°C)
(IF = 5 A, TC = 125°C)
(IF = 15 A, TC = 25°C)
(IF = 15 A, TC = 125°C)
vF
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC = 25°C)
(Rated DC Voltage, TC = 125°C)
iR
60
50
Unit
V
mA
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
DEVICE ORDERING INFORMATION
Package Type
Shipping†
MBRF30H150CTG
TO−220FP
(Pb−Free)
50 Units / Rail
MBR30H150CTG
TO−220
(Pb−Free)
50 Units / Rail
Device Order Number
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
http://onsemi.com
2
IF, INSTANTANEOUS FORWARD CURRENT (A)
IF, INSTANTANEOUS FORWARD CURRENT (A)
MBRF30H150CTG, MBR30H150CTG
100
TJ = 125°C
TJ = 100°C
TJ = 25°C
10
1
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
100
TJ = 125°C
TJ = 100°C
TJ = 25°C
10
1
0.1
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
2.2 2.4
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
1.0E−01
1.0E−02
TJ = 125°C
IR, REVERSE CURRENT (A)
IR, REVERSE CURRENT (A)
TJ = 125°C
1.0E−02
1.0E−03
TJ = 100°C
1.0E−04
TJ = 100°C
1.0E−03
1.0E−04
1.0E−05
TJ = 25°C
TJ = 25°C
1.0E−05
1.0E−06
VR, REVERSE VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
25
PFO, AVERAGE POWER DISSIPATION
(WATTS)
IF, AVERAGE FORWARD CURRENT (AMPS)
1.0E−06
1.0E−07
0 10 20 30 40 50 60 70 80 90 100110 120130140150
0 10 20 30 40 50 60 70 80 90 100110 120130140150
dc
20
15
SQUARE WAVE
10
5
0
95
100 105 110 115 120 125 130 135 140 145 150 155
30
TJ = 150°C
25
SQUARE
20
15
dc
10
5
0
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
TC, CASE TEMPERATURE (°C)
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
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3
MBRF30H150CTG, MBR30H150CTG
10000
C, CAPACITANCE (pF)
TJ = 25°C
1000
100
10
0
50
100
150
VR, REVERSE VOLTAGE (V)
R(t), TRANSIENT THERMAL RESISTANCE
Figure 7. Capacitance
100
D = 0.5
10
0.2
0.1
1
0.05
P(pk)
0.01
t1
0.1
t2
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
DUTY CYCLE, D = t1/t2
0.001
0.1
0.01
1
10
100
1000
t1, TIME (sec)
R(t), TRANSIENT THERMAL RESISTANCE
Figure 8. Thermal Response Junction−to−Ambient for MBR30H150CTG
10
1
D = 0.5
0.2
0.1
0.05
P(pk)
0.1
t1
0.01
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.1
0.01
1
10
t1, TIME (sec)
Figure 9. Thermal Response Junction−to−Case for MBR30H150CTG
http://onsemi.com
4
100
1000
R(t), TRANSIENT THERMAL RESISTANCE
MBRF30H150CTG, MBR30H150CTG
10
D = 0.5
1
0.1
0.2
0.1
0.05
0.01
P(pk)
t1
0.01
t2
SINGLE PULSE
DUTY CYCLE, D = t1/t2
0.001
0.000001
0.00001
0.0001
0.001
0.1
0.01
1
10
t1, TIME (sec)
Figure 10. Thermal Response Junction−to−Case for MBRF30H150CTG
http://onsemi.com
5
100
1000
MBRF30H150CTG, MBR30H150CTG
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE K
−T−
−B−
F
SEATING
PLANE
C
S
Q
U
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
A
1 2 3
H
−Y−
K
G
N
L
D
J
R
3 PL
0.25 (0.010)
M
B
M
−T−
F
T
SEATING
PLANE
C
S
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
U
1 2 3
H
K
Z
L
R
V
MILLIMETERS
MIN
MAX
15.67
16.12
9.96
10.63
4.50
4.90
0.60
1.00
2.95
3.28
2.54 BSC
3.00
3.43
0.45
0.63
12.78
13.73
1.23
1.47
5.08 BSC
3.10
3.50
2.51
2.96
2.34
2.87
6.06
6.88
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
4
Q
INCHES
MIN
MAX
0.617
0.635
0.392
0.419
0.177
0.193
0.024
0.039
0.116
0.129
0.100 BSC
0.118
0.135
0.018
0.025
0.503
0.541
0.048
0.058
0.200 BSC
0.122
0.138
0.099
0.117
0.092
0.113
0.239
0.271
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
Y
TO−220
CASE 221A−09
ISSUE AF
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
J
G
D
N
FULLPAK and SWITCHMODE are trademarks of Semiconductor Components Industries, LLC.
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.161
0.095
0.105
0.110
0.155
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 6:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
4.09
2.42
2.66
2.80
3.93
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
ANODE
CATHODE
ANODE
CATHODE
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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6
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MBRF30H150CT/D
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