MBR30H150CT, MBRF30H150CT, SB30H150CT-1 Datasheet

MBR30H150CT, MBRF30H150CT, SB30H150CT-1
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode High Voltage Schottky Rectifier
Low Leakage Current 5.0 μA
FEATURES
ITO-220AB
TO-220AB
• Power pack
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High frequency operation
1
2
• Solder dip 275 °C max. 10 s, per JESD 22-B106
3
1
MBR30H150CT
3
2
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
MBRF30H150CT
TO-262AA
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling, and
polarity protection application.
SB30H150CT-1
PIN 1
PIN 2
PIN 3
CASE
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-262AA
1
2
3
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
150 V
IFSM
260 A
VF
0.75 V
TJ
175 °C
Package
TO-220AB, ITO-220AB,
TO-262AA
Diode variations
Dual Common Cathode
per
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR30H150CT
MBRF30H150CT
SB30H150CT-1
UNIT
Maximum repetitive peak reverse voltage
VRRM
150
V
Working peak reverse voltage
VRWM
150
V
Maximum DC blocking voltage
VDC
150
V
Maximum average forward rectified current
total device
per diode
IF(AV)
30
15
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
260
A
Peak repetitive reverse current per diode at tp = 2 μs, 1 kHz
IRRM
1.0
A
Peak non-repetitive reverse surge energy per diode
(8/20 μs waveform)
ERSM
10
mJ
Non-repetitve avalanche energy per diode at 25 °C,
IAS = 2 A, L = 10 mH
EAS
20
mJ
dV/dt
10 000
V/μs
TJ, TSTG
- 65 to + 175
°C
VAC
1500
V
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminals to
heatsink t = 1 min
Revision: 13-Aug-13
Document Number: 88865
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR30H150CT, MBRF30H150CT, SB30H150CT-1
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum instantaneous forward voltage 
per diode
VF (1)
Maximum reverse current per diode at
working peak reverse voltage
TEST CONDITIONS
VALUE
IF = 15 A
TC = 25 °C
0.90
UNIT
IF = 15 A
TC = 125 °C
0.75
IF = 30 A
TC = 25 °C
0.99
IF = 30 A
TC = 125 °C
0.86
TJ = 25 °C
5.0
μA
TJ = 125 °C
1.0
mA
IR (1)
V
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBRF
MBRB
UNIT
RJC
1.7
4.0
1.7
°C/W
Typical thermal resistance per diode
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
MBR30H150CT-E3/45
2.06
45
50/tube
Tube
ITO-220AB
MBRF30H150CT-E3/45
2.20
45
50/tube
Tube
TO-262AA
SB30H150CT-1E3/45
1.58
45
50/tube
Tube

RATINGS AND CHARACTERISTICS CURVES 
(TA = 25 °C unless otherwise noted)
280
Peak Forward Surge Current (A)
Average Forward Current (A)
40
35
MBR, MBRB
30
MBRF
25
20
15
10
5
0
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
240
200
160
120
80
40
0
25
50
75
100
125
150
175
1
10
100
Case Temperature (°C)
Number of Cycles at 60 Hz
Fig. 1 - Forward Current Derating Curve (Total)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Revision: 13-Aug-13
Document Number: 88865
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR30H150CT, MBRF30H150CT, SB30H150CT-1
www.vishay.com
Vishay General Semiconductor
10 000
TJ = 175 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
10
TJ = 125 °C
TJ = 75 °C
1
TJ = 25 °C
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
1000
100
10
0.1
1
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100
Fig. 5 - Typical Junction Capacitance Per Diode
10 000
100
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (µA)
10
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
TJ = 175 °C
1000
TJ = 125 °C
100
10
TJ = 75 °C
1
0.1
TJ = 25 °C
0.01
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
Revision: 13-Aug-13
10
MBRF
1
0.1
0.01
MBR, MBRB
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Document Number: 88865
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR30H150CT, MBRF30H150CT, SB30H150CT-1
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
ITO-220AB
TO-220AB
0.055 (1.40)
0.047 (1.20)
0.398 (10.10)
0.382 (9.70)
0.343 (8.70)
TYP.
0.185 (4.70)
0.169 (4.30)
0.055 (1.40)
0.049 (1.25)
0.150 (3.80)
0.139 (3.54)
DIA.
0.114 (2.90)
0.106 (2.70)
0.408 (10.36)
0.392 (9.96)
0.138 (3.50)
0.122 (3.10)
0.154 (3.90)
0.138 (3.50)
0.067 (1.70)
TYP.
0.331(8.40)
TYP.
1
0.634 (16.10)
0.618 (15.70)
PIN
2 3
0.118 (3.00)
TYP.
0.630 (16.00)
0.614 (15.60)
1
0.102 (2.60)
0.087 (2.20)
0.264 (6.70)
0.248 (6.50)
PIN
2 3
0.320 (8.12)
0.304 (7.72)
0.633 (16.07)
0.601 (15.67)
0.117 (2.96)
0.101 (2.56)
0.035 (0.90)
0.028 (0.70)
0.100 (2.54)
TYP.
0.270 (6.88)
0.255 (6.48)
0.638 (16.20)
0.598 (15.20)
0.370 (9.40)
0.354 (9.00)
1.161 (29.48)
1.106 (28.08)
0.523 (13.28)
0.507 (12.88)
0.064 (1.62)
0.056 (1.42)
0.200 (5.08) TYP.
0.193 (4.90)
0.177 (4.50)
0.108 (2.74)
0.092 (2.34)
1.29 (3.28)
DIA.
1.21 (3.08)
0.396 (10.05)
0.372 (9.45)
0.024 (0.60)
0.018 (0.45)
0.039 (1.00)
0.024 (0.60)
0.100
(2.54) TYP.
0.058 (1.47)
MAX.
0.200 (5.08)
TYP.
0.024 (0.60)
0.018 (0.45)
TO-262AA
0.398 (10.10)
0.382 (9.70)
0.185 (4.70)
0.169 (4.30)
0.055 (1.40)
0.039 (1.00)
0.055 (1.40)
0.049 (1.25)
K
0.370 (9.40)
0.354 (9.00)
PIN
1 2 3
0.425 (10.80)
0.393 (10.00)
0.488 (12.4)
0.472 (12.00)
0.102 (2.60)
0.087 (2.20)
0.523 (13.28)
0.507 (12.88)
0.035 (0.90)
0.028 (0.70)
0.100
(2.54) TYP.
Revision: 13-Aug-13
0.405 (10.28)
0.389 (9.88)
0.062 (1.57)
0.054 (1.37)
0.024 (0.60)
0.018 (0.45)
0.200 (5.08) TYP.
Document Number: 88865
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000