Freescale Semiconductor Technical Data Document Number: MMG20271H9 Rev. 1, 9/2014 Enhancement Mode pHEMT Technology (E--pHEMT) MMG20271H9T1 High Linearity Amplifier The MMG20271H9 is a high dynamic range, single--stage, low noise amplifier MMIC, housed in a SOT--89 standard plastic package. With high OIP3 and low noise figure, it can be utilized as a driver amplifier in the transmit chain and as a second-- stage LNA in the receive chain . It is ideal for cellular, PCS, LTE, TD--SCDMA, W--CDMA base station, wireless LAN and other systems in the 1500 to 2700 MHz frequency range. 1500--2700 MHz, 16 dB 27.5 dBm E--pHEMT LNA/GPA Features Frequency: 1500--2700 MHz Noise Figure: 1.7 dB @ 2140 MHz P1dB: 27.5 dBm @ 2140 MHz Small--Signal Gain: 16 dB @ 2140 MHz Third Order Output Intercept Point: 43.1 dBm @ 2140 MHz Class 2 HBM ESD Immunity Single 5 V Supply Supply Current: 215 mA 50 Ohm Operation (some external matching required) Cost--effective SOT--89 Surface Mount Plastic Package In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. Table 1. Typical Performance (1) Table 2. Maximum Ratings Rating Symbol 1500 MHz 1900 MHz 2140 MHz 2700 MHz Unit Noise Figure NF 1.9 1.8 1.7 1.8 dB Input Return Loss (S11) IRL --11 --12.1 --13.5 --18.5 dB Output Return Loss (S22) ORL --24 --25.3 --35 --28 dB Small--Signal Gain (S21) Gp 18 16.6 16 14.3 dB Power Output @ 1dB Compression P1dB 27.5 27.5 27.5 27.6 dBm Third Order Input Intercept Point IIP3 23 25.2 27.1 29.9 dBm Third Order Output Intercept Point OIP3 41 41.8 43.1 44.2 dBm Characteristic SOT--89 Symbol Value Unit Supply Voltage VDD 6 V Supply Current IDD 400 mA RF Input Power Pin 25 dBm Storage Temperature Range Tstg --65 to +150 C Junction Temperature TJ 175 C 1. VDD = 5 Vdc, TA = 25C, 50 ohm system, application circuit tuned for specified frequency. Table 3. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 91C, 5 Vdc, 220 mA, no RF applied Symbol Value (2) Unit RJC 29 C/W 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. Freescale Semiconductor, Inc., 2011, 2014. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MMG20271H9T1 1 Table 4. Electrical Characteristics (VDD = 5 Vdc, 2140 MHz, TA = 25C, 50 ohm system, in Freescale Application Circuit) Symbol Min Typ Max Unit Small--Signal Gain (S21) Gp 13.4 16 — dB Input Return Loss (S11) IRL — --13.5 — dB Output Return Loss (S22) ORL — --35 — dB Power Output @ 1dB Compression P1dB — 27.5 — dBm IIP3 — 27.1 — dBm Third Order Output Intercept Point OIP3 — 43.1 — dBm Reverse Isolation (S12) |S12| — --22 — dB Noise Figure NF — 1.7 — dB Supply Current IDD 177 215 271 mA Supply Voltage VDD — 5 — V Characteristic Third Order Input Intercept Point Table 5. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) IV Table 6. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 1 260 C Table 7. Functional Pin Description Pin Number 2 Pin Function 1 RFin 2 Ground 3 RFout/DC Supply 1 2 3 Figure 1. Functional Diagram MMG20271H9T1 2 RF Device Data Freescale Semiconductor, Inc. 50 OHM APPLICATION CIRCUIT: 2140 MHz VSUPPLY C3 BIAS CIRCUIT C4 L2 RF INPUT Z1 Z2 1 3 Z3 Z4 L1 Z5 RF OUTPUT Z6 C1 C5 Z1 Z2 Z3 0.120 0.021 Microstrip 0.030 0.040 Microstrip 0.030 0.040 Microstrip Z4 Z5 Z6 C2 0.020 0.021 Microstrip 0.010 0.021 Microstrip 0.165 0.021 Microstrip Figure 2. MMG20271H9T1 Test Circuit Schematic Table 8. MMG20271H9T1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 1.5 pF Chip Capacitor GRM1555C1H1R5BA01 Murata C2, C3 18 pF Chip Capacitors GRM1555C1H180GA01 Murata C4 0.1 F Chip Capacitor GRM155R61A104K01D Murata C5 1.2 pF Chip Capacitor GRM1555C1H1R2BA01 Murata L1 (1) 0 , 1 A Chip Resistor ERJ2GE0R00X Panasonic L2 23 nH Inductor 0402CS--23NXGL Coilcraft PCB 0.010, r = 3.48, Multilayer RO4350B Rogers 1. Location L1 can be an inductor, resistor or jumper depending on frequency. MMG20271H9T1 RF Device Data Freescale Semiconductor, Inc. 3 50 OHM APPLICATION CIRCUIT: 2140 MHz VDD RFIN RFOUT C3 C4 L2 C1 C5 L1 C2 SOT--89--3C Rev. 0 Figure 3. MMG20271H9T1 Test Circuit Component Layout Table 8. MMG20271H9T1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 1.5 pF Chip Capacitor GRM1555C1H1R5BA01 Murata C2, C3 18 pF Chip Capacitors GRM1555C1H180GA01 Murata C4 0.1 F Chip Capacitor GRM155R61A104K01D Murata C5 1.2 pF Chip Capacitor GRM1555C1H1R2BA01 Murata L1 (1) 0 , 1 A Chip Resistor ERJ2GE0R00X Panasonic L2 23 nH Inductor 0402CS--23NXGL Coilcraft PCB 0.010, r = 3.48, Multilayer RO4350B Rogers 1. Location L1 can be an inductor, resistor or jumper depending on frequency. (Test Circuit Component Designations and Values table repeated for reference.) MMG20271H9T1 4 RF Device Data Freescale Semiconductor, Inc. 50 OHM TYPICAL CHARACTERISTICS: 2140 MHz --10 25C 17 IRL, INPUT RETURN LOSS (dB) Gp, SMALL--SIGNAL GAIN (dB) 19 TC = --40C 85C 15 13 --12 TC = 85C 25C --14 --40C --16 VDD = 5 Vdc 11 2000 2075 2150 2225 VDD = 5 Vdc --18 2000 2300 2225 Figure 4. Small--Signal Gain (S21) versus Frequency versus Temperature Figure 5. Input Return Loss (S11) versus Frequency versus Temperature 2300 30 --20 TC = --40C --30 85C --40 25C --50 2000 2075 VDD = 5 Vdc 2150 2225 P1dB, 1 dB COMPRESSION POINT (dBm) ORL, OUTPUT RETURN LOSS (dB) 2150 f, FREQUENCY (MHz) --10 TC = --40C 28 85C 25C 26 24 VDD = 5 Vdc 22 2040 2300 2090 2140 2190 2240 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 6. Output Return Loss (S22) versus Frequency versus Temperature Figure 7. P1dB versus Frequency versus Temperature 45 3.4 TC = --40C 43 NF, NOISE FIGURE (dB) OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 2075 f, FREQUENCY (MHz) 25C 41 85C 39 2.6 TC = 85C 1.8 25C 1.0 --40C VDD = 5 Vdc 1 MHz Tone Spacing 37 2040 2090 2140 2190 VDD = 5 Vdc 2240 0.2 2000 2075 2150 2225 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 8. Third Order Output Intercept Point versus Frequency versus Temperature Figure 9. Noise Figure versus Frequency versus Temperature 2300 MMG20271H9T1 RF Device Data Freescale Semiconductor, Inc. 5 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) 50 OHM TYPICAL CHARACTERISTICS: 2140 MHz --20 --30 TC = 85C --40 --50 --60 --70 16 25C VDD = 5 Vdc, f = 2140 MHz Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) --40C 18 20 22 24 26 Pout, OUTPUT POWER (dBm) Figure 10. Single--Carrier W--CDMA Adjacent Channel Power Ratio versus Output Power MMG20271H9T1 6 RF Device Data Freescale Semiconductor, Inc. 50 OHM APPLICATION CIRCUIT: 1900 MHz VSUPPLY C3 BIAS CIRCUIT C4 L2 RF INPUT Z1 Z2 1 3 Z3 Z4 L1 Z5 RF OUTPUT Z6 C1 C5 Z1 Z2 Z3 0.097 0.021 Microstrip 0.030 0.040 Microstrip 0.030 0.040 Microstrip Z4 Z5 Z6 C2 0.020 0.021 Microstrip 0.010 0.021 Microstrip 0.122 0.021 Microstrip Figure 11. MMG20271H9T1 Test Circuit Schematic Table 9. MMG20271H9T1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 1.8 pF Chip Capacitor GRM1555C1H1R8BA01 Murata C2, C3 18 pF Chip Capacitors GRM1555C1H180GA01 Murata C4 0.1 F Chip Capacitor GRM155R61A104K01D Murata C5 1.5 pF Chip Capacitor GRM1555C1H1R5BA01 Murata L1 (1) 1.2 nH Inductor 0402CS--1N2XJL Coilcraft L2 23 nH Inductor 0402CS--23NXGL Coilcraft PCB 0.010, r = 3.48, Multilayer RO4350B Rogers 1. Location L1 can be an inductor, resistor or jumper depending on frequency. MMG20271H9T1 RF Device Data Freescale Semiconductor, Inc. 7 50 OHM APPLICATION CIRCUIT: 1900 MHz VDD RFIN RFOUT C3 C4 L2 C1 C5 L1 C2 SOT--89--3C Rev. 0 Figure 12. MMG20271H9T1 Test Circuit Component Layout Table 9. MMG20271H9T1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 1.8 pF Chip Capacitor GRM1555C1H1R8BA01 Murata C2, C3 18 pF Chip Capacitors GRM1555C1H180GA01 Murata C4 0.1 F Chip Capacitor GRM155R61A104K01D Murata C5 1.5 pF Chip Capacitor GRM1555C1H1R5BA01 Murata L1 (1) 1.2 nH Inductor 0402CS--1N2XJL Coilcraft L2 23 nH Inductor 0402CS--23NXGL Coilcraft PCB 0.010, r = 3.48, Multilayer RO4350B Rogers 1. Location L1 can be an inductor, resistor or jumper depending on frequency. (Test Circuit Component Designations and Values table repeated for reference.) MMG20271H9T1 8 RF Device Data Freescale Semiconductor, Inc. 50 OHM TYPICAL CHARACTERISTICS: 1900 MHz --8 IRL, INPUT RETURN LOSS (dB) Gp, SMALL--SIGNAL GAIN (dB) 19 17 15 13 --12 --16 --20 VDD = 5 Vdc 11 1750 1825 1900 1975 VDD = 5 Vdc --24 1750 2050 Figure 14. Input Return Loss (S11) versus Frequency 2050 P1dB, 1 dB COMPRESSION POINT (dBm) 30 --20 --30 --40 VDD = 5 Vdc 1825 1900 1975 28 26 24 VDD = 5 Vdc 22 1800 2050 1850 1900 1950 2000 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 15. Output Return Loss (S22) versus Frequency Figure 16. P1dB versus Frequency 45 3.4 43 2.6 41 39 1.8 1.0 VDD = 5 Vdc 1 MHz Tone Spacing 37 1800 1975 Figure 13. Small--Signal Gain (S21) versus Frequency NF, NOISE FIGURE (dB) ORL, OUTPUT RETURN LOSS (dB) OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 1900 f, FREQUENCY (MHz) --10 --50 1750 1825 f, FREQUENCY (MHz) 1850 1900 1950 VDD = 5 Vdc 2000 0.2 1750 1825 1900 1975 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 17. Third Order Output Intercept Point versus Frequency Figure 18. Noise Figure versus Frequency 2050 MMG20271H9T1 RF Device Data Freescale Semiconductor, Inc. 9 50 OHM APPLICATION CIRCUIT: 2700 MHz VSUPPLY C3 BIAS CIRCUIT C4 L2 RF INPUT Z1 Z2 1 3 Z3 Z4 L1 Z5 RF OUTPUT Z6 C1 C5 Z1 Z2 Z3 0.080 0.021 Microstrip 0.030 0.040 Microstrip 0.030 0.040 Microstrip Z4 Z5 Z6 C2 0.020 0.021 Microstrip 0.010 0.021 Microstrip 0.048 0.021 Microstrip Figure 19. MMG20271H9T1 Test Circuit Schematic Table 10. MMG20271H9T1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 1.5 pF Chip Capacitor GRM1555C1H1R5BA01 Murata C2, C3 18 pF Chip Capacitors GRM1555C1H180GA01 Murata C4 0.1 F Chip Capacitor GRM155R61A104K01D Murata C5 1.0 pF Chip Capacitor GRM1555C1H1R0BA01 Murata L1 (1) 0 , 1 A Chip Resistor ERJ2GE0R00X Panasonic L2 23 nH Inductor 0402CS--23NXGL Coilcraft PCB 0.010, r = 3.48, Multilayer RO4350B Rogers 1. Location L1 can be an inductor, resistor or jumper depending on frequency. MMG20271H9T1 10 RF Device Data Freescale Semiconductor, Inc. 50 OHM APPLICATION CIRCUIT: 2700 MHz VDD RFIN RFOUT C3 C4 L2 C1 L1 C5 C2 SOT--89--3C Rev. 0 Figure 20. MMG20271H9T1 Test Circuit Component Layout Table 10. MMG20271H9T1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 1.5 pF Chip Capacitor GRM1555C1H1R5BA01 Murata C2, C3 18 pF Chip Capacitors GRM1555C1H180GA01 Murata C4 0.1 F Chip Capacitor GRM155R61A104K01D Murata C5 1.0 pF Chip Capacitor GRM1555C1H1R0BA01 Murata L1 (1) 0 , 1 A Chip Resistor ERJ2GE0R00X Panasonic L2 23 nH Inductor 0402CS--23NXGL Coilcraft PCB 0.010, r = 3.48, Multilayer RO4350B Rogers 1. Location L1 can be an inductor, resistor or jumper depending on frequency. (Test Circuit Component Designations and Values table repeated for reference.) MMG20271H9T1 RF Device Data Freescale Semiconductor, Inc. 11 50 OHM TYPICAL CHARACTERISTICS: 2700 MHz --8 IRL, INPUT RETURN LOSS (dB) Gp, SMALL--SIGNAL GAIN (dB) 17 15 13 11 --12 --16 --20 VDD = 5 Vdc 9 2550 2625 2700 2775 VDD = 5 Vdc --24 2550 2850 Figure 22. Input Return Loss (S11) versus Frequency 2850 30 --20 --30 --40 VDD = 5 Vdc --50 2550 2625 2700 2775 28 26 24 VDD = 5 Vdc 22 2600 2850 2650 2700 2750 2800 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 23. Output Return Loss (S22) versus Frequency Figure 24. P1dB versus Frequency 3.4 43 2.6 NF, NOISE FIGURE (dB) 45 41 39 1.8 1.0 VDD = 5 Vdc 1 MHz Tone Spacing 37 2600 2775 Figure 21. Small--Signal Gain (S21) versus Frequency P1dB, 1 dB COMPRESSION POINT (dBm) ORL, OUTPUT RETURN LOSS (dB) 2700 f, FREQUENCY (MHz) --10 OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 2625 f, FREQUENCY (MHz) 2650 2700 2750 VDD = 5 Vdc 2800 0.2 2550 2625 2700 2775 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 25. Third Order Output Intercept Point versus Frequency Figure 26. Noise Figure versus Frequency 2850 MMG20271H9T1 12 RF Device Data Freescale Semiconductor, Inc. 1.90 3.00 2X 45 4.35 2X 1.25 3X 0.70 0.85 2X 1.50 Figure 27. PCB Pad Layout for SOT--89A MG271H YYWW Figure 28. Product Marking MMG20271H9T1 RF Device Data Freescale Semiconductor, Inc. 13 PACKAGE DIMENSIONS MMG20271H9T1 14 RF Device Data Freescale Semiconductor, Inc. MMG20271H9T1 RF Device Data Freescale Semiconductor, Inc. 15 MMG20271H9T1 16 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers AN3100: General Purpose Amplifier and MMIC Biasing Software .s2p File Development Tools Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to Software & Tools on the part’s Product Summary page to download the respective tool. FAILURE ANALYSIS At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In cases where Freescale is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third party vendors with moderate success. For updates contact your local Freescale Sales Office. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Dec. 2011 Initial Release of Data Sheet 1 Sept. 2014 Table 2, Maximum Ratings: updated Junction Temperature from 150C to 175C to reflect recent test results of the device, p. 1 Revised Failure Analysis information, p. 17 MMG20271H9T1 RF Device Data Freescale Semiconductor, Inc. 17 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. 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U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E 2011, 2014 Freescale Semiconductor, Inc. MMG20271H9T1 Document Number: MMG20271H9 Rev. 1, 9/2014 18 RF Device Data Freescale Semiconductor, Inc.