Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MML09212H
Rev. 2, 9/2014
Enhancement Mode pHEMT
Technology (E--pHEMT)
MML09212HT1
Low Noise Amplifier
The MML09212H is a 2--stage low noise amplifier (LNA) with active bias
and high isolation for use in cellular infrastructure applications. It is designed
for a range of low noise, high linearity applications such as picocell,
femtocell, tower mounted amplifiers (TMA) and receiver front--end circuits. It
operates from a single voltage supply and is suitable for applications with
frequencies from 400 to 1400 MHz such as ISM, GSM, W--CDMA and LTE.
400--1400 MHz, 37.5 dB
22.8 dBm, 0.52 dB NF
E--pHEMT LNA
Features
 Low Noise Figure: 0.52 dB @ 900 MHz
 Frequency: 400--1400 MHz
 Unconditionally Stable Over Temperature
 High Reverse Isolation: --58 dB @ 900 MHz
 P1dB: 22.8 dBm @ 900 MHz
 Small--Signal Gain: 37.5 dB @ 900 MHz
 Third Order Output Intercept Point: 37.5 dBm @ 900 MHz
 Active Bias Control (On--chip)
 Single 5 V Supply
 Supply Current: 150 mA
 50 Ohm Operation (some external matching required)
 Cost--effective 12--pin, 3 mm QFN Surface Mount Plastic Package
 In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.
Table 1. Typical Performance (1)
Table 2. Maximum Ratings
Rating
Symbol
400
MHz
900
MHz
1400
MHz
Unit
Noise Figure (2)
NF
0.52
0.52
0.74
dB
Input Return Loss
(S11)
IRL
--19
--24
--17
dB
Output Return Loss
(S22)
ORL
--15
--14
--13.5
dB
Small--Signal Gain
(S21)
Gp
40.0
37.5
35.0
dB
P1dB
22.6
22.8
22.5
dBm
Third Order Input
Intercept Point
IIP3
--2
--0.5
3
dBm
Third Order Output
Intercept Point
OIP3
37
37
38
dBm
Characteristic
Power Output @
1dB Compression
QFN 3  3
Symbol
Value
Unit
Supply Voltage
VDD
6
V
Supply Current
IDD
300
mA
RF Input Power
Pin
20
dBm
Storage Temperature Range
Tstg
--65 to +150
C
Junction Temperature
TJ
175
C
1. VDD = 5 Vdc, TA = 25C, 50 ohm system, application circuit
tuned for specified frequency.
2. Noise figure value calculated with connector losses removed.
Table 3. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 83C, 5 Vdc, 150 mA, no RF applied
Symbol
Value (3)
Unit
RJC
37
C/W
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
 Freescale Semiconductor, Inc., 2012--2014. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MML09212HT1
1
Table 4. Electrical Characteristics (VDD = 5 Vdc, 900 MHz, TA = 25C, 50 ohm system, in Freescale Application Circuit)
Symbol
Min
Typ
Max
Unit
Small--Signal Gain (S21)
Gp
35.0
37.5
—
dB
Input Return Loss (S11)
IRL
—
--24
—
dB
Output Return Loss (S22)
ORL
—
--14
—
dB
Power Output @ 1dB Compression
P1dB
—
22.8
—
dBm
IIP3
—
--0.5
—
dBm
Third Order Output Intercept Point
OIP3
—
37
—
dBm
Reverse Isolation (S12)
|S12|
—
--58
—
dBm
Noise Figure (1)
NF
—
0.52
—
dB
Supply Current (2)
IDD
128
150
178
mA
Supply Voltage
VDD
—
5
—
V
Characteristic
Third Order Input Intercept Point
Table 5. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
0
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
IV
Table 6. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
1
260
C
1. Noise figure value calculated with connector losses removed.
2. DC current measured with no RF signal applied.
RF
Feedback
VDD1
RF FB N.C. VDD1
12 11 10
RFMATCH
RFMATCH 1
RFin
RFin
VDD2/RFout
BIAS
CIRCUIT
BIAS
CIRCUIT
RFin
2
RFin
3
GND
9
N.C.
8
VDD2/RFout
7
N.C.
4
5
6
VBA1 N.C. VBA2
Note: Exposed backside of the package is
DC and RF ground.
VBA1
VBA2
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
MML09212HT1
2
RF Device Data
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 900 MHz
R1
12
C8
11
C14
10
C9
R4
VDD2
9
1
C5
VDD1
L3
C7
C6
L2
L1
Z1
8
2
RF
OUTPUT
Z2
C2
RF
INPUT
3
BIAS
CIRCUIT
C1
4
7
BIAS
CIRCUIT
5
6
R2
R3
C10
Z1
Z2
C11
C12
C13
0.050  0.021 Microstrip
0.030  0.021 Microstrip
Figure 3. MML09212HT1 Test Circuit Schematic
Table 7. MML09212HT1 Test Circuit Component Designations and Values
Part
Description
C1, C2, C7, C14
56 pF Chip Capacitors
C3, C4
Components Not Placed
C5
Part Number
Manufacturer
GRM1555C1H560JZ01
Murata
180 pF Chip Capacitor
GRM1555C1H181JZ01
Murata
C6, C9, C10, C13
0.01 F Chip Capacitors
GRM155R71E103KA01
Murata
C8
1000 pF Chip Capacitor
GRM155R71E101KA01
Murata
C11, C12
100 pF Chip Capacitors
GRM1555C1H101JZ01
Murata
L1
12 nH Chip Inductor
0402CS--12NXGL
Coilcraft
L2
30 nH Chip Inductor
0402CS--30NXGL
Coilcraft
L3
8.2 nH Chip Inductor
0402CS--8N2XGL
Coilcraft
R1
82  Chip Resistor
RC0402JR--07--82RL
Yageo
R2
1100  Chip Resistor
RC0402FR--07--1K1L
Yageo
R3
910  Chip Resistor
RC0402FR--07--910RL
Yageo
R4
0 , 1 A Chip Resistor
ERJ2GE0R00X
Panasonic
PCB
0.010, r = 3.48, Multilayer
RO4350B
Rogers
Note: Component numbers C3 and C4 are labeled on board but not placed.
MML09212HT1
RF Device Data
Freescale Semiconductor, Inc.
3
50 OHM APPLICATION CIRCUIT: 900 MHz
VDD2
VDD1
Via B
Via A
C9
C14
R4
C8
R1
C7
L3
C6
RFIN
C4*
RFOUT
C3*
C5
L2
L1
C2
C1
Via A
C10
R2
C11
R3 Via B
C12
C13
QFN 3x3--12D
Rev. 1
Note: Component numbers C3* and C4* are labeled on board but not placed.
Figure 4. MML09212HT1 Test Circuit Component Layout
Table 7. MML09212HT1 Test Circuit Component Designations and Values
Part
Description
C1, C2, C7, C14
56 pF Chip Capacitors
C3, C4
Components Not Placed
C5
C6, C9, C10, C13
Part Number
Manufacturer
GRM1555C1H560JZ01
Murata
180 pF Chip Capacitor
GRM1555C1H181JZ01
Murata
0.01 F Chip Capacitors
GRM155R71E103KA01
Murata
C8
1000 pF Chip Capacitor
GRM155R71E101KA01
Murata
C11, C12
100 pF Chip Capacitors
GRM1555C1H101JZ01
Murata
L1
12 nH Chip Inductor
0402CS--12NXGL
Coilcraft
L2
30 nH Chip Inductor
0402CS--30NXGL
Coilcraft
L3
8.2 nH Chip Inductor
0402CS--8N2XGL
Coilcraft
R1
82  Chip Resistor
RC0402JR--07--82RL
Yageo
R2
1100  Chip Resistor
RC0402FR--07--1K1L
Yageo
R3
910  Chip Resistor
RC0402FR--07--910RL
Yageo
R4
0 , 1 A Chip Resistor
ERJ2GE0R00X
Panasonic
PCB
0.010, r = 3.48, Multilayer
RO4350B
Rogers
(Test Circuit Component Designations and Values repeated for reference.)
MML09212HT1
4
RF Device Data
Freescale Semiconductor, Inc.
50 OHM TYPICAL CHARACTERISTICS: 900 MHz
0
--58
35
--10
--58.5
30
--30
25C
--40C
--40
25C
--60
15
--615
--60
VDD = 5 Vdc
870
810
930
990
VDD = 5 Vdc
--61.50
1050
750
810
870
930
990
1050
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 5. S11 versus Frequency versus
Temperature
Figure 6. S12 versus Frequency versus
Temperature
44
--4
--40C
40
36
--7
--10
85C
25C
32
S22 (dB)
S21 (dB)
85C
--59.5
20
--60.5
10
--50
--70
750
--40C
--59
25
85C
S12 (dB)
S11 (dB)
--20
28
24
85C
--13
--16
--19
20
--40C
25C
--22
VDD = 5 Vdc
16
750
810
870
930
990
VDD = 5 Vdc
--25
1050
750
810
870
930
990
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 7. S21 versus Frequency versus
Temperature
Figure 8. S22 versus Frequency versus
Temperature
1050
MML09212HT1
RF Device Data
Freescale Semiconductor, Inc.
5
50 OHM TYPICAL CHARACTERISTICS: 900 MHz
42
1.4
41
40
0.8
85C
0.6
25C
0.4
--40C
0.2
0
OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
Gps, POWER GAIN (dB)
1
750
810
870
930
990
38
85C
37
25C
36
35
34
VDD = 5 Vdc
f = 900 MHz
32
15
1050
16
17
18
19
21
20
22
f, FREQUENCY (MHz)
Pout, OUTPUT POWER (dBm)
Figure 9. Noise Figure versus Frequency
versus Temperature
Figure 10. Power Gain versus Output Power
versus Temperature, CW
38
37.75
25C
37.5
37.25
85C
37
--40C
36.75
36.5
VDD = 5 Vdc
1 MHz Tone Spacing
36.25
36
--40C
39
33
VDD = 5 Vdc
P1dB, 1 dB COMPRESSION POINT, CW (dBm)
NF, NOISE FIGURE (dB)
1.2
800
840
880
920
960
1000
f, FREQUENCY (MHz)
Figure 11. Third Order Output Intercept Point
(Two--Tone) versus Frequency versus Temperature
23
26
25
24
--40C
23
85C
25C
22
21
20
VDD = 5 Vdc
19
800
840
880
920
960
1000
f, FREQUENCY (MHz)
Figure 12. P1dB versus Frequency versus
Temperature, CW
MML09212HT1
6
RF Device Data
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 400 MHz
R1
12
C8
11
C14
C9
R4
10
VDD2
9
1
C5
VDD1
L3
C7
L2
C6
L1
Z1
8
2
L5
RF
OUTPUT
Z2
C2
RF
INPUT
C1
L4
3
BIAS
CIRCUIT
4
7
BIAS
CIRCUIT
5
6
R2
R3
C10
Z1
Z2
C11
C12
C13
0.050  0.021 Microstrip
0.030  0.021 Microstrip
Figure 13. MML09212HT1 Test Circuit Schematic
Table 8. MML09212HT1 Test Circuit Component Designations and Values
Part
Description
C1, C2
100 pF Chip Capacitors
C3, C4
Components Not Placed
C5, C7, C8, C11, C12
C6, C9, C10, C13
Part Number
Manufacturer
GRM1555C1H101JZ01
Murata
390 pF Chip Capacitors
GRM1555C1H391JZ01
Murata
0.01 F Chip Capacitors
GRM155R71E103KA01
Murata
C14
1000 pF Chip Capacitor
GRM155R71E101KA01
Murata
L1
20 nH Chip Inductor
0402CS--20NXGL
Coilcraft
L2, L5
30 nH Chip Inductors
0402CS--30NXGL
Coilcraft
L3
16 nH Chip Inductor
0402CS--16NNXGL
Coilcraft
L4
1.2 nH Chip Inductor
0402CS--1N2XJL
Coilcraft
R1
100  Chip Resistor
RC0402JR--07--100RL
Yageo
R2
1100  Chip Resistor
RC0402FR--07--1K1L
Yageo
R3
910  Chip Resistor
RC0402FR--07--910RL
Yageo
R4
0 , 1 A Chip Resistor
ERJ2GE0R00X
Panasonic
PCB
0.010, r = 3.48, Multilayer
RO4350B
Rogers
Note: Component numbers C3 and C4 are labeled on board but not placed.
MML09212HT1
RF Device Data
Freescale Semiconductor, Inc.
7
50 OHM APPLICATION CIRCUIT: 400 MHz
VDD2
VDD1
Via B
Via A
C9
C14
C7
R4
C4*
C8
R1 L3
C3*
C6
RFIN
RFOUT
L5
L2
C5
L1
C2
C1
L4
Via A
C10
R2
C11
R3 Via B
C12
C13
QFN 3x3--12F
Rev. 1
Note: Component numbers C3* and C4* are labeled on board but not placed.
Figure 14. MML09212HT1 Test Circuit Component Layout
Table 8. MML09212HT1 Test Circuit Component Designations and Values
Part
Description
C1, C2
100 pF Chip Capacitors
C3, C4
Components Not Placed
C5, C7, C8, C11, C12
C6, C9, C10, C13
Part Number
Manufacturer
GRM1555C1H101JZ01
Murata
390 pF Chip Capacitors
GRM1555C1H391JZ01
Murata
0.01 F Chip Capacitors
GRM155R71E103KA01
Murata
C14
1000 pF Chip Capacitor
GRM155R71E101KA01
Murata
L1
20 nH Chip Inductor
0402CS--20NXGL
Coilcraft
L2, L5
30 nH Chip Inductors
0402CS--30NXGL
Coilcraft
L3
16 nH Chip Inductor
0402CS--16NNXGL
Coilcraft
L4
1.2 nH Chip Inductor
0402CS--1N2XJL
Coilcraft
R1
100  Chip Resistor
RC0402JR--07--100RL
Yageo
R2
1100  Chip Resistor
RC0402FR--07--1K1L
Yageo
R3
910  Chip Resistor
RC0402FR--07--910RL
Yageo
R4
0 , 1 A Chip Resistor
ERJ2GE0R00X
Panasonic
PCB
0.010, r = 3.48, Multilayer
RO4350B
Rogers
(Test Circuit Component Designations and Values repeated for reference.)
MML09212HT1
8
RF Device Data
Freescale Semiconductor, Inc.
0
--59
35
--5
--60
30
--10
--61
25
--15
--62
20
S12 (dB)
S11 (dB)
50 OHM TYPICAL CHARACTERISTICS: 400 MHz
--20
--64
10
--25
--655
--30
VDD = 5 Vdc
360
420
480
540
600
300
360
420
480
540
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 15. S11 versus Frequency
Figure 16. S12 versus Frequency
44
--4
42
--7
40
--10
38
--13
36
34
600
--16
--19
32
30
300
VDD = 5 Vdc
--660
S22 (dB)
S21 (dB)
--35
300
--63
15
--22
VDD = 5 Vdc
360
420
480
540
VDD = 5 Vdc
--25
600
300
360
420
480
540
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 17. S21 versus Frequency
Figure 18. S22 versus Frequency
600
MML09212HT1
RF Device Data
Freescale Semiconductor, Inc.
9
1.4
NF, NOISE FIGURE (dB)
1.2
1
0.8
0.6
0.4
0.2
0
VDD = 5 Vdc
300
360
420
480
540
f, FREQUENCY (MHz)
Figure 19. Noise Figure versus Frequency
600
OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
50 OHM TYPICAL CHARACTERISTICS: 400 MHz
46
44
42
40
38
36
34
32
30
300
VDD = 5 Vdc
350
400
450
500
550
600
f, FREQUENCY (MHz)
Figure 20. Third Order Output Intercept Point
(Two--Tone) versus Frequency
MML09212HT1
10
RF Device Data
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 1400 MHz
R1
12
C8
11
C14
10
C9
R4
VDD2
9
1
C5
VDD1
L3
C7
C6
L2
L1
Z1
8
2
RF
OUTPUT
Z2
C2
RF
INPUT
3
BIAS
CIRCUIT
C1
4
7
BIAS
CIRCUIT
5
6
R2
R3
C10
Z1
Z2
C11
C12
C13
0.050  0.021 Microstrip
0.030  0.021 Microstrip
Figure 21. MML09212HT1 Test Circuit Schematic
Table 9. MML09212HT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
220 pF Chip Capacitor
GRM1555C1H221JZ01
Murata
C2, C7
56 pF Chip Capacitors
GRM1555C1H560JZ01
Murata
C3, C4
Components Not Placed
C5
180 pF Chip Capacitor
GRM1555C1H181JZ01
Murata
C6, C9, C10, C13
0.01 F Chip Capacitors
GRM155R71E103KA01
Murata
C8
1000 pF Chip Capacitor
GRM155R71E101KA01
Murata
C11, C12
100 pF Chip Capacitors
GRM1555C1H101JZ01
Murata
C14
68 pF Chip Capacitor
GRM1555C1H680JZ01
Murata
L1
6.8 nH Chip Inductor
0402CS--6N8XGL
Coilcraft
L2
23 nH Chip Inductor
0402CS--23NXGL
Coilcraft
L3
4.3 nH Chip Inductor
0402CS--4N3XGL
Coilcraft
R1
100  Chip Resistor
RC0402JR--07--100RL
Yageo
R2
1100  Chip Resistor
RC0402FR--07--1K1L
Yageo
R3
910  Chip Resistor
RC0402FR--07--910RL
Yageo
R4
0 , 1 A Chip Resistor
ERJ2GE0R00X
Panasonic
PCB
0.010, r = 3.48, Multilayer
RO4350B
Rogers
Note: Component numbers C3 and C4 are labeled on board but not placed.
MML09212HT1
RF Device Data
Freescale Semiconductor, Inc.
11
50 OHM APPLICATION CIRCUIT: 1400 MHz
VDD2
VDD1
Via B
Via A
C9
C14
C7
R4
C8
R1
RFIN
C4*
L3
C6
RFOUT
C3*
C5
L2
L1
C2
C1
Via A
C10
R2
C11
R3
C12
Via B
C13
QFN 3x3--12D
Rev. 1
Note: Component numbers C3* and C4* are labeled on board but not placed.
Figure 22. MML09212HT1 Test Circuit Component Layout
Table 9. MML09212HT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
220 pF Chip Capacitor
GRM1555C1H221JZ01
Murata
C2, C7
56 pF Chip Capacitors
GRM1555C1H560JZ01
Murata
C3, C4
Components Not Placed
C5
180 pF Chip Capacitor
GRM1555C1H181JZ01
Murata
C6, C9, C10, C13
0.01 F Chip Capacitors
GRM155R71E103KA01
Murata
C8
1000 pF Chip Capacitor
GRM155R71E101KA01
Murata
C11, C12
100 pF Chip Capacitors
GRM1555C1H101JZ01
Murata
C14
68 pF Chip Capacitor
GRM1555C1H680JZ01
Murata
L1
6.8 nH Chip Inductor
0402CS--6N8XGL
Coilcraft
L2
23 nH Chip Inductor
0402CS--23NXGL
Coilcraft
L3
4.3 nH Chip Inductor
0402CS--4N3XGL
Coilcraft
R1
100  Chip Resistor
RC0402JR--07--100RL
Yageo
R2
1100  Chip Resistor
RC0402FR--07--1K1L
Yageo
R3
910  Chip Resistor
RC0402FR--07--910RL
Yageo
R4
0 , 1 A Chip Resistor
ERJ2GE0R00X
Panasonic
RO4350B
Rogers
PCB
0.010, r = 3.48, Multilayer
(Test Circuit Component Designations and Values repeated for reference.)
MML09212HT1
12
RF Device Data
Freescale Semiconductor, Inc.
0
--45
35
--5
--46
30
--10
--47
25
--15
--48
20
S12 (dB)
S11 (dB)
50 OHM TYPICAL CHARACTERISTICS: 1400 MHz
--20
--50
10
--25
--30
--515
VDD = 5 Vdc
1250
1300
1350
1400
1450
1500
--520
1200
1550
1250
1300
1350
1400
1450
1500
f, FREQUENCY (MHz)
Figure 23. S11 versus Frequency
Figure 24. S12 versus Frequency
44
--4
42
--7
40
--10
38
--13
36
34
1550
--16
--19
32
30
1200
VDD = 5 Vdc
f, FREQUENCY (MHz)
S22 (dB)
S21 (dB)
--35
1200
--49
15
--22
VDD = 5 Vdc
1250
1300
1350
1400
1450
1500
1550
--25
1200
VDD = 5 Vdc
1250
1300
1350
1400
1450
1500
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 25. S21 versus Frequency
Figure 26. S22 versus Frequency
1550
MML09212HT1
RF Device Data
Freescale Semiconductor, Inc.
13
1.4
NF, NOISE FIGURE (dB)
1.2
1
0.8
0.6
0.4
0.2
0
1200
VDD = 5 Vdc
1250
1300
1350
1400
1450
1500
f, FREQUENCY (MHz)
Figure 27. Noise Figure versus Frequency
1550
OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
50 OHM TYPICAL CHARACTERISTICS: 1400 MHz
40
35
39
30
38
25
37
20
36
15
10
35
345
330
1200
VDD = 5 Vdc
1250
1300
1350
1400
1450
f, FREQUENCY (MHz)
1500
1550
Figure 28. Third Order Output Intercept Point
(Two--Tone) versus Frequency
MML09212HT1
14
RF Device Data
Freescale Semiconductor, Inc.
3.00
0.70
0.30
2.00
3.40
0.50
1.6  1.6 solder pad with
thermal via structure. All
dimensions in mm.
Figure 29. PCB Pad Layout for QFN 3  3
MA01
YWZ
Figure 30. Product Marking
MML09212HT1
RF Device Data
Freescale Semiconductor, Inc.
15
PACKAGE DIMENSIONS
MML09212HT1
16
RF Device Data
Freescale Semiconductor, Inc.
MML09212HT1
RF Device Data
Freescale Semiconductor, Inc.
17
MML09212HT1
18
RF Device Data
Freescale Semiconductor, Inc.
APPENDIX: APPLICATION CIRCUITS WITH TWO--SUPPLY VOLTAGE
50 OHM APPLICATION CIRCUIT: 900 MHz
R1
12
C8
11
C9
C14
10
VDD2
9
1
C5
VDD1
L3
C7
C6
L2
L1
Z1
8
2
C15
C16
C17
RF
OUTPUT
Z2
C2
RF
INPUT
3
BIAS
CIRCUIT
C1
4
7
BIAS
CIRCUIT
5
6
R2
R3
C10
Z1
Z2
C11
C12
C13
0.050  0.021 Microstrip
0.030  0.021 Microstrip
Figure A--1. MML09212HT1 Test Circuit Schematic
Table A--1. MML09212HT1 Test Circuit Component Designations and Values
Part
Description
C1, C2, C7, C14, C16
56 pF Chip Capacitors
C3, C4
Components Not Placed
C5
C6, C9, C10, C13, C17
Part Number
Manufacturer
GRM1555C1H560JZ01
Murata
180 pF Chip Capacitor
GRM1555C1H181JZ01
Murata
0.01 F Chip Capacitors
GRM155R71E103KA01
Murata
C8, C15
1000 pF Chip Capacitors
GRM155R71E101KA01
Murata
C11, C12
100 pF Chip Capacitors
GRM1555C1H101JZ01
Murata
L1
12 nH Chip Inductor
0402CS--12NXGL
Coilcraft
L2
30 nH Chip Inductor
0402CS--30NXGL
Coilcraft
L3
8.2 nH Chip Inductor
0402CS--8N2XGL
Coilcraft
R1
82  Chip Resistor
RC0402JR--07--82RL
Yageo
R2
1100  Chip Resistor
RC0402FR--07--1K1L
Yageo
R3
910  Chip Resistor
RC0402FR--07--910RL
Yageo
PCB
0.010, r = 3.48, Multilayer
RO4350B
Rogers
Note: Component numbers C3 and C4 are labeled on board but not placed.
MML09212HT1
RF Device Data
Freescale Semiconductor, Inc.
19
Appendix: Application Circuits with Two--Supply Voltage (continued)
50 OHM APPLICATION CIRCUIT: 900 MHz
VDD2
VDD1
Via B
Via A
C9
C17
C16
C14
C15
C8
R1
C7
L3
C6
RFIN
C4*
RFOUT
C3*
C5
L2
L1
C2
C1
Via A
C10
R2
C11
R3 Via B
C12
C13
QFN 3x3--12D
Rev. 1
Note: Component numbers C3* and C4* are labeled on board but not placed.
Figure A--2. MML09212HT1 Test Circuit Component Layout
Table A--1. MML09212HT1 Test Circuit Component Designations and Values
Part
Description
C1, C2, C7, C14, C16
56 pF Chip Capacitors
C3, C4
Components Not Placed
C5
Part Number
Manufacturer
GRM1555C1H560JZ01
Murata
180 pF Chip Capacitor
GRM1555C1H181JZ01
Murata
C6, C9, C10, C13, C17
0.01 F Chip Capacitors
GRM155R71E103KA01
Murata
C8, C15
1000 pF Chip Capacitors
GRM155R71E101KA01
Murata
C11, C12
100 pF Chip Capacitors
GRM1555C1H101JZ01
Murata
L1
12 nH Chip Inductor
0402CS--12NXGL
Coilcraft
L2
30 nH Chip Inductor
0402CS--30NXGL
Coilcraft
L3
8.2 nH Chip Inductor
0402CS--8N2XGL
Coilcraft
R1
82  Chip Resistor
RC0402JR--07--82RL
Yageo
R2
1100  Chip Resistor
RC0402FR--07--1K1L
Yageo
R3
910  Chip Resistor
RC0402FR--07--910RL
Yageo
PCB
0.010, r = 3.48, Multilayer
RO4350B
Rogers
(Test Circuit Component Designations and Values repeated for reference.)
MML09212HT1
20
RF Device Data
Freescale Semiconductor, Inc.
Appendix: Application Circuits with Two--Supply Voltage (continued)
50 OHM APPLICATION CIRCUIT: 400 MHz
R1
12
11
C9
C14
C8
10
VDD2
9
1
C5
VDD1
L3
C7
C6
L2
L1
Z1
8
2
C15
C16
C17
RF
OUTPUT
Z2
C2
RF
INPUT
3
BIAS
CIRCUIT
C1
4
7
BIAS
CIRCUIT
5
6
R2
R3
C10
Z1
Z2
C11
C12
C13
0.050  0.021 Microstrip
0.030  0.021 Microstrip
Figure A--3. MML09212HT1 Test Circuit Component Layout
Table A--2. MML09212HT1 Test Circuit Component Designations and Values
Part
Description
C1, C2
100 pF Chip Capacitors
C3, C4
Components Not Placed
C5, C7, C8,C11, C12, C15
Part Number
Manufacturer
GRM1555C1H101JZ01
Murata
390 pF Chip Capacitors
GRM1555C1H391JZ01
Murata
C6, C9, C10, C13, C16
0.01 F Chip Capacitors
GRM155R71E103KA01
Murata
C14, C17
1000 pF Chip Capacitors
GRM155R71E101KA01
Murata
L1
20 nH Chip Inductor
0402CS--20NXGL
Coilcraft
L2, L5
30 nH Chip Inductors
0402CS--30NXGL
Coilcraft
L3
16 nH Chip Inductor
0402CS--16NNXGL
Coilcraft
L4
1.2 nH Chip Inductor
0402CS--1N2XJL
Coilcraft
R1
100  Chip Resistor
RC0402JR--07--100RL
Yageo
R2
1100  Chip Resistor
RC0402FR--07--1K1L
Yageo
R3
910  Chip Resistor
RC0402FR--07--910RL
Yageo
PCB
0.010, r = 3.48, Multilayer
RO4350B
Rogers
Note: Component numbers C3 and C4 are labeled on board but not placed.
MML09212HT1
RF Device Data
Freescale Semiconductor, Inc.
21
Appendix: Application Circuits with Two--Supply Voltage (continued)
50 OHM APPLICATION CIRCUIT: 400 MHz
VDD2
VDD1
Via B
Via A
C9
C16
C17
C14
C15
C8
R1
C7
L3
C6
RFIN
C4*
RFOUT
C3*
C5
L2
L1
C2
C1
Via A
C10
R2
C11
R3 Via B
C12
C13
QFN 3x3--12D
Rev. 1
Note: Component numbers C3* and C4* are labeled on board but not placed.
Figure A--4. MML09212HT1 Test Circuit Component Layout
Table A--2. MML09212HT1 Test Circuit Component Designations and Values
Part
Description
C1, C2
100 pF Chip Capacitors
C3, C4
Components Not Placed
C5, C7, C8,C11, C12, C15
Part Number
Manufacturer
GRM1555C1H101JZ01
Murata
390 pF Chip Capacitors
GRM1555C1H391JZ01
Murata
C6, C9, C10, C13, C16
0.01 F Chip Capacitors
GRM155R71E103KA01
Murata
C14, C17
1000 pF Chip Capacitors
GRM155R71E101KA01
Murata
L1
20 nH Chip Inductor
0402CS--20NXGL
Coilcraft
L2, L5
30 nH Chip Inductors
0402CS--30NXGL
Coilcraft
L3
16 nH Chip Inductor
0402CS--16NNXGL
Coilcraft
L4
1.2 nH Chip Inductor
0402CS--1N2XJL
Coilcraft
R1
100  Chip Resistor
RC0402JR--07--100RL
Yageo
R2
1100  Chip Resistor
RC0402FR--07--1K1L
Yageo
R3
910  Chip Resistor
RC0402FR--07--910RL
Yageo
PCB
0.010, r = 3.48, Multilayer
RO4350B
Rogers
(Test Circuit Component Designations and Values repeated for reference.)
MML09212HT1
22
RF Device Data
Freescale Semiconductor, Inc.
Appendix: Application Circuits with Two--Supply Voltage (continued)
50 OHM APPLICATION CIRCUIT: 1400 MHz
R1
12
C8
11
C14
C9
10
VDD2
9
1
C5
VDD1
L3
C7
C6
L2
L1
Z1
8
2
C15
C16
C17
RF
OUTPUT
Z2
C2
RF
INPUT
3
BIAS
CIRCUIT
C1
4
7
BIAS
CIRCUIT
5
6
R2
R3
C10
Z1
Z2
C11
C12
C13
0.050  0.021 Microstrip
0.030  0.021 Microstrip
Figure A--5. MML09212HT1 Test Circuit Component Layout
Table A--3. MML09212HT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
220 pF Chip Capacitor
GRM1555C1H221JZ01
Murata
C2, C7
56 pF Chip Capacitors
GRM1555C1H560JZ01
Murata
C3, C4
Components Not Placed
C5
180 pF Chip Capacitor
GRM1555C1H181JZ01
Murata
C6, C9, C10, C13, C17
0.01 F Chip Capacitors
GRM155R71E103KA01
Murata
C8, C15
1000 pF Chip Capacitors
GRM155R71E101KA01
Murata
C11, C12
100 pF Chip Capacitors
GRM1555C1H101JZ01
Murata
C14, C16
68 pF Chip Capacitors
GRM1555C1H680JZ01
Murata
L1
6.8 nH Chip Inductor
0402CS--6N8XGL
Coilcraft
L2
23 nH Chip Inductor
0402CS--23NXGL
Coilcraft
L3
4.3 nH Chip Inductor
0402CS--4N3XGL
Coilcraft
R1
100  Chip Resistor
RC0402JR--07--100RL
Yageo
R2
1100  Chip Resistor
RC0402FR--07--1K1L
Yageo
R3
910  Chip Resistor
RC0402FR--07--910RL
Yageo
PCB
0.010, r = 3.48, Multilayer
RO4350B
Rogers
Note: Component numbers C3 and C4 are labeled on board but not placed.
MML09212HT1
RF Device Data
Freescale Semiconductor, Inc.
23
Appendix: Application Circuits with Two--Supply Voltage (continued)
50 OHM APPLICATION CIRCUIT: 1400 MHz
VDD2
VDD1
Via B
Via A
C9
C17
C16
C14
C15
C8
R1
C7
L3
C6
RFIN
C4*
RFOUT
C3*
C5
L2
L1
C2
C1
Via A
C10
R2
C11
R3 Via B
C12
C13
QFN 3x3--12D
Rev. 1
Note: Component numbers C3* and C4* are labeled on board but not placed.
Figure A--6. MML09212HT1 Test Circuit Component Layout
Table A--3. MML09212HT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
220 pF Chip Capacitor
GRM1555C1H221JZ01
Murata
C2, C7
56 pF Chip Capacitors
GRM1555C1H560JZ01
Murata
C3, C4
Components Not Placed
C5
180 pF Chip Capacitor
GRM1555C1H181JZ01
Murata
C6, C9, C10, C13, C17
0.01 F Chip Capacitors
GRM155R71E103KA01
Murata
C8, C15
1000 pF Chip Capacitors
GRM155R71E101KA01
Murata
C11, C12
100 pF Chip Capacitors
GRM1555C1H101JZ01
Murata
C14, C16
68 pF Chip Capacitors
GRM1555C1H680JZ01
Murata
L1
6.8 nH Chip Inductor
0402CS--6N8XGL
Coilcraft
L2
23 nH Chip Inductor
0402CS--23NXGL
Coilcraft
L3
4.3 nH Chip Inductor
0402CS--4N3XGL
Coilcraft
R1
100  Chip Resistor
RC0402JR--07--100RL
Yageo
R2
1100  Chip Resistor
RC0402FR--07--1K1L
Yageo
R3
910  Chip Resistor
RC0402FR--07--910RL
Yageo
PCB
0.010, r = 3.48, Multilayer
RO4350B
Rogers
(Test Circuit Component Designations and Values repeated for reference.)
MML09212HT1
24
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
 AN3100: General Purpose Amplifier and MMIC Biasing
Software
 .s2p File
Development Tools
 Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to
Software & Tools on the part’s Product Summary page to download the respective tool.
FAILURE ANALYSIS
At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In
cases where Freescale is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third
party vendors with moderate success. For updates contact your local Freescale Sales Office.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Oct. 2012
 Initial Release of Data Sheet
1
Apr. 2013
 Table 1, Typical Performance: changed 400 MHz Application Circuit Third Order Output Intercept Point
value from 38 dBm to 37 dBm to reflect the true capability of the device, p. 1
 Added 900 MHz, 50 Ohm Operation, application circuit figures as follows:
-- Figure 5, S11 versus Frequency versus Temperature, p. 5
-- Figure 6, S12 versus Frequency versus Temperature, p. 5
-- Figure 7, S21 versus Frequency versus Temperature, p. 5
-- Figure 8, S22 versus Frequency versus Temperature, p. 5
-- Figure 9, Noise Figure versus Frequency versus Temperature, p. 6
-- Figure 10, Power Gain versus Output Power versus Temperature, CW, p. 6
-- Figure 11, Third Order Output Intercept Point (Two--Tone) versus Frequency versus
Temperature, p. 6
-- Figure 12, P1dB versus Frequency versus Temperature, CW, p. 6
 Added 400 MHz, 50 Ohm Operation, application circuit figures as follows:
-- Figure 15, S11 versus Frequency, p. 9
-- Figure 16, S12 versus Frequency, p. 9
-- Figure 17, S21 versus Frequency, p. 9
-- Figure 18, S22 versus Frequency, p. 9
-- Figure 19, Noise Figure versus Frequency, p. 10
-- Figure 20, Third Order Output Intercept Point (Two--Tone) versus Frequency, p. 10
 Added 1400 MHz, 50 Ohm Operation, application circuit figures as follows:
-- Figure 23, S11 versus Frequency, p. 13
-- Figure 24, S12 versus Frequency, p. 13
-- Figure 25, S21 versus Frequency, p. 13
-- Figure 26, S22 versus Frequency, p. 13
-- Figure 27, Noise Figure versus Frequency, p. 14
-- Figure 28, Third Order Output Intercept Point (Two--Tone) versus Frequency, p. 14
 Added Appendix: Application Circuits with Two--Supply Voltage, pp. 19–24
2
Sept. 2014
 Table 2, Maximum Ratings: updated Junction Temperature from 150C to 175C to reflect recent test
results of the device, p. 1
 Added Failure Analysis information, p. 25
MML09212HT1
RF Device Data
Freescale Semiconductor, Inc.
25
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E 2012--2014 Freescale Semiconductor, Inc.
MML09212HT1
Document Number: MML09212H
Rev. 2, 9/2014
26
RF Device Data
Freescale Semiconductor, Inc.
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