AN11573 BGU8103 GNSS LNA evaluation board Rev. 1 — 10 July 2015 Application note Document information Info Content Keywords BGU8103, GNSS, LNA Abstract This document explains the BGU8103 GNSS LNA evaluation board Ordering info Board-number: OM7896 12NC: 9340 690 75598 Contact information For more information, please visit: http://www.nxp.com AN11573 NXP Semiconductors BGU8103 GNSS LNA EVB Revision history Rev Date Description 1 First publication 20150710 Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] AN11573 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 July 2015 © NXP B.V. 2015. All rights reserved. 2 of 19 AN11573 NXP Semiconductors BGU8103 GNSS LNA EVB 1. Introduction NXP Semiconductors’ BGU8103 Global Navigation Satellite System (GNSS) LNA Evaluation Board is designed to evaluate the performance of the GNSS LNA using: NXP Semiconductors’ BGU8103 GNSS Low Noise Amplifier A matching inductor A decoupling capacitor NXP Semiconductors’ BGU8103 is a low-noise amplifier for wearable GNSS receiver applications in a plastic, leadless 6 pin, extremely thin small outline SOT1232 at 1.1 x 0.7 x 0.37mm, 0.4mm pitch. The BGU8103 features gain of 17.5 dB and a noise figure of 0.80 dB at an extremely low current consumption of 1.2 mA. Its sufficient linearity performance removes interference and noise from co-habitation cellular transmitters, while retaining sensitivity. The LNA components occupy a total area of approximately 2.5 mm2. In this document, the application diagram, board layout, bill of materials, and typical results are given, as well as some explanations on GNSS related performance parameters like out-of-band input third-order intercept point O_IIP3, gain compression under jamming and noise under jamming. Fig 1. AN11573 Application note BGU8103 GNSS LNA evaluation board All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 July 2015 © NXP B.V. 2015. All rights reserved. 3 of 19 AN11573 NXP Semiconductors BGU8103 GNSS LNA EVB 2. General description Modern wearable applications like smartwatches suffer less from strong radio signals in the direct neighborhood, so problems like co-habitation are not likely to occur and linearity performance of a GNSS receiver may be reduced. To maximize battery life the power consumption of a GNSS receiver implemented in a wearable application should be as low as possible. Since the GNSS receiver needs to receive signals with an average power level of -130 dBm, sensitivity is very important. Currently there are several GNSS chipsets on the market that can be implemented in wearable applications. Although many of these GNSS ICs do have integrated LNA front ends, the noise performance, and as a result the system sensitivity, is not always adequate. The GNSS receiver sensitivity is a measure how accurate the coordinates are calculated. The GNSS signal reception can be improved by a GNSS LNA, which improves the sensitivity by amplifying the wanted GNSS signal with a low-noise amplifier. 3. BGU8103 GNSS LNA evaluation board The BGU8103LNA evaluation board simplifies the RF evaluation of the BGU8103 GNSS LNA applied in a GNSS front-end, often used in mobile cell phones. The evaluation board enables testing of the device RF performance and requires no additional support circuitry. The board is fully assembled with the BGU8103 including the input series inductor and decoupling capacitor. The board is supplied with two SMA connectors for input and output connection to RF test equipment. The BGU8103 can operate from a 1.5 V to 3.1 V single supply and consumes typical 1.2 mA. 3.1 Application Circuit The circuit diagram of the evaluation board is shown in Fig 2. With jumper JU1 the enable input can be connected either to Vcc or GND. BGU8103 GNSS LNA EVB X3 GND Ven Vcc X4 JU1 C1 6 RF in 2 L1 5 BGU8103 4 X1 RF out 3 X2 1 AN11573 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 July 2015 © NXP B.V. 2015. All rights reserved. 4 of 19 AN11573 NXP Semiconductors BGU8103 GNSS LNA EVB Fig 2. AN11573 Application note Circuit diagram of the BGU8103LNA evaluation board All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 July 2015 © NXP B.V. 2015. All rights reserved. 5 of 19 AN11573 NXP Semiconductors BGU8103 GNSS LNA EVB 3.2 PCB Layout Fig 3. Printed-Circuit Board layout of the BGU8103LNA evaluation board A good PCB layout is an essential part of an RF circuit design. The LNA evaluation board of the BGU8103can serve as a guideline for laying out a board using the BGU8103. Use controlled impedance lines for all high frequency inputs and outputs. Bypass Vcc with decoupling capacitors, preferably located as close as possible to the device. For long bias lines it may be necessary to add decoupling capacitors along the line further away from the device. Proper grounding of the GND pins is also essential for good RF performance. Either connect the GND pins directly to the ground plane or through vias, or do both, which is recommended. The material that has been used for the evaluation board is FR4 using the stack shown in Fig 4. 20um Cu 0.2mm FR4 critical 20um Cu 0.8mm FR4 only for mechanical rigidity of PCB 20um Cu (1) Material supplier is ISOLA DURAVER; εr = 4.6-4.9: T Fig 4. AN11573 Application note Stack of the PCB material All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 July 2015 © NXP B.V. 2015. All rights reserved. 6 of 19 AN11573 NXP Semiconductors BGU8103 GNSS LNA EVB 3.3 Bill of materials Table 1. BOM of the BGU8103 GNSS LNA evaluation board Designator Description Footprint Value Supplier Name/type G BGU8103 1.1 x 0.7 x 0.37mm3, NXP Comment SOT1232 0.4mm pitch PCB 20 x 35mm BGU8103 GNSS LNA EV Kit C1 Capacitor 0402 1µF Murata GRM1555 Decoupling L1 Inductor 0402 12nH Murata LQW15 Input matching X1, X2 SMA RD connector - - Johnson, End launch SMA RF input/ RF output X3 DC header - - Molex, PCB header, Right Angle, 1 row, 3 way 90121-0763 Bias connector X4 JUMPER - - Molex, PCB header, Vertical, 1 row, 3 way 90120-0763 Connect Ven to Vcc or separate Ven voltage 142-0701-841 Stage JU1 JUMPER 3.4 BGU8103 product description NXP Semiconductors’ BGU8103 GNSS low noise amplifier is designed for the GNSS frequency band. The integrated biasing circuit is temperature stabilized, which keeps the current constant over temperature. It also enables the superior linearity performance of the BGU8103. The BGU8103 is also equipped with an enable function that allows it to be controlled via a logic signal. In disabled mode it consumes less than1 μA. The output of the BGU8103 is internally matched for 1575.42 MHz whereas only one series inductor at the input is needed to achieve the best RF performance. Both the input and output are AC coupled via an integrated capacitor. It requires only two external components to build a GNSS LNA having the following advantages: Low noise System optimized gain High linearity under jamming 1.1 x 0.7 x 0.37, 0.4mm pitch: SOT1232 Low current consumption Short power settling time 3.5 Series inductor The evaluation board is supplied with Murata LQW15 series inductor of 12 nH. This is a wire wound type of inductor with high quality factor (Q) and low series resistance (Rs) (see Table 2). This type of inductor is recommended in order to achieve the best noise AN11573 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 July 2015 © NXP B.V. 2015. All rights reserved. 7 of 19 AN11573 NXP Semiconductors BGU8103 GNSS LNA EVB performance. High Q inductors from other suppliers can be used. If it is decided to use other low cost inductors with lower Q and higher Rs the noise performance will degrade. Table 2. Type Series Inductor options Murata Multilayer Size Size Size 0201 0402 0603 LQG Non-Magnetic Core Film Wirewound LQP 15H 18H NF↑↑ NF↑ 03T 15M NF↑↑ NF↑ LQW Non-Magnetic Core 15A 18A Default NF↓ Comment Lowest NF 4. Typical LNA evaluation board results Table 3 gives the measured performance of the BGU8103 LNA EVB. Table 3. Typical results measured on the evaluation Board Operating Frequency is f = 1575.42 MHz unless otherwise specified; Temp = 25 °C Parameter Symbol LNA LNA LNA EVB EVB EVB LNA EVB Unit Remarks VCC 1.5 1.8 2.85 3.1 V Supply Current ICC 1.1 1.2 1.2 1.2 mA Noise Figure NF 0.9 0.9 1.1 1.1 dB Power Gain Gp 16.8 17.5 17.5 18 dB Input Return Loss RLin 7 8 8 8 dB Output Return Loss RLout 11 11 11 11 dB Reverse Isolation ISOrev 35 35 35 35 dB Input 1dB Gain Compression Pi1dB -18 -16 -13 -13 dBm Output 1dB Gain Compression Po1dB -2.2 0.5 3.5 4 dBm Input third order intercept point IIP3 -8 -8 -7 -6 dBm [2] Output third order intercept point OIP3 8.8 9.5 10.5 12 dBm [2] Ton <2 <2 <2 <2 µs Toff <1 <1 <1 <1 µs Supply Voltage Power settling time [1] [1] The noise figure and gain figures are measured at the SMA connectors of the evaluation board. The losses of the connectors and the PCB of approximately 0.05 dB are not subtracted. Measured at Tanb = 25 oC. [2] Out of band IP3, jammers at f1=f+138MHz and f2=f+276MHz, where f=1575.42MHz. Pin(f1)=-20dBm, Pin(f2)=-65dBm AN11573 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 July 2015 © NXP B.V. 2015. All rights reserved. 8 of 19 AN11573 NXP Semiconductors BGU8103 GNSS LNA EVB At the average power levels of –130 dBm that have to be received by a GNSS receiver, the system will not have in-band intermodulation problems caused by the GNSS-signal itself. Strong out-of-band cell phone TX jammers however can cause linearity problems, and result in third-order intermodulation products in the GNSS frequency band. In the next paragraphs the effects of these Jammer-signals on the Noise and Gain performance of the BGU8103 are described. The effect of these Jammers on the In-band and Out-ofBand Third-Order Intercept points are described in more detail in a separate User Manual: UM10453: 2-Tone Test BGU7005 and BGU7007 GNSS LNA. 4.1 In-band 1dB gain compression due to 787MHz, 850MHz and 1850MHz jammers As stated before, signal levels in the GNSS frequency band of -130dBm average will not cause linearity problems in the GNSS band itself. This of course is also valid for the 1dB gain compression in-band. The 1dB compression point at 1575.42MHz caused by cell phone TX jammers however is important. Measurements have been carried out using the setup shown in Fig 5. Fig 5. 1dB Gain compression under jamming measurement setup (LNA evaluation board) The gain of the DUT was measured between port RFin and RFout of the EVB at the GNSS frequency 1575 MHz, while simultaneously a jammer power signal was swept at the 20dB attenuated input port of the Directional Coupler. Please note that the drive power of the jammer is 20 dB lower at the input of the DUT caused by the directional coupler. AN11573 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 July 2015 © NXP B.V. 2015. All rights reserved. 9 of 19 AN11573 NXP Semiconductors BGU8103 GNSS LNA EVB The figures below show the supply-current (Icc) and gain compression curves with 787MHz, 850MHz and 1850 MHz jammers (input jammer power at LNA-board, taking into account the approx. 20 dB attenuation of the directional coupler and RF-cable from Jammer-Generator to the directional coupler). The gain drops 1dB with approximately -12 dBm input jamming power at 787MHz and 850MHz (Vcc=1.8V) (Fig 7 and Fig 9). With an 1850MHz jamming signal, the 1dB gain compression occurs around -11 dBm input power level (Fig 11). Gain=f(P_jammer) Icc=f(P_jammer) 20 8 18 7 16 6 14 Icc [mA] Vcc=1.5V 4 Vcc=1.8V Gain [dB] 12 5 10 Vcc=1.5V 8 Vcc=1.8V 3 Vcc=2.85V 6 Vcc=2.85V 2 Vcc=3.1V 4 Vcc=3.1V 2 1 0 0 -2 -70 -60 -50 -40 -30 Pin [dBm] -20 -10 0 -70 Pin 1575 MHz = -45 dBm Fig 6. Application note -50 -40 -30 Pin [dBm] -20 -10 0 Pin 1575 MHz = -45 dBm Icc versus jammer power at 787 MHz AN11573 -60 Fig 7. Gain versus jammer power at 787 MHz All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 July 2015 © NXP B.V. 2015. All rights reserved. 10 of 19 AN11573 NXP Semiconductors BGU8103 GNSS LNA EVB Gain=f(P_jammer) Icc=f(P_jammer) 20 8 18 7 16 6 14 Icc [mA] Vcc=1.5V 4 Vcc=1.8V Gain [dB] 12 5 10 Vcc=1.5V 8 Vcc=1.8V 3 Vcc=2.85V 6 Vcc=2.85V 2 Vcc=3.1V 4 Vcc=3.1V 2 1 0 -2 0 -70 -60 -50 -40 -30 Pin [dBm] -20 -10 -70 0 Pin 1575 MHz = -45 dBm Fig 8. -60 -50 -40 -30 Pin [dBm] -20 -10 0 Pin 1575 MHz = -45 dBm Icc versus jammer power at 850 MHz Fig 9. Gain versus jammer power at 850 MHz Gain=f(P_jammer) Icc=f(P_jammer) 20 8 18 7 16 6 14 Icc [mA] Vcc=1.5V 4 Vcc=1.8V Gain [dB] 12 5 10 Vcc=1.5V 8 Vcc=1.8V 3 Vcc=2.85V 6 Vcc=2.85V 2 Vcc=3.1V 4 Vcc=3.1V 2 1 0 -2 0 -70 -60 -50 -40 -30 Pin [dBm] -20 -10 -70 0 Pin 1575 MHz = -45 dBm -60 -50 -40 -30 Pin [dBm] -20 -10 0 Pin 1575 MHz = -45 dBm Fig 10. Icc versus jammer power at 1850 MHz Fig 11. Gain versus jammer power at 1850 MHz 4.2 Noise figure as function of jammer power at 850MHz and 1850MHz Noise figure under jamming conditions is a measure of how the LNA behaves when e.g. a GSM TX interfering signal is at the input of the GNSS antenna. To measure this behavior the setup shown in Fig 12 is used. AN11573 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 July 2015 © NXP B.V. 2015. All rights reserved. 11 of 19 AN11573 NXP Semiconductors BGU8103 GNSS LNA EVB The jammer signal is coupled via a directional coupler to the DUT: this is to avoid the jammer signal damaging the noise source. The GNSS BPF is needed to avoid driving the second-stage LNA in saturation. Fig 12. Noise under jamming measurement setup (LNA evaluation board) With the results of these measurements and the specification of the SAW filter, the jammer power levels that cause noise increase can be calculated. As can be seen in Fig 13, with a 850 MHz jammer the NF of the LNA starts to increase at Pjam = -20 dBm (input jammer power at LNA-board, taking into account the approx. 20 dB attenuation of the directional coupler and RF-cable from Jammer-Generator to the directional coupler). For the 1850 MHz jammer the NF of the LNA starts to increase at Pjam = -25 dBm (see Fig 14). AN11573 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 July 2015 © NXP B.V. 2015. All rights reserved. 12 of 19 AN11573 NXP Semiconductors BGU8103 GNSS LNA EVB 7 NF (dB) 6 NF (dB) 5.5 6.5 6 5.5 5 5 4.5 4.5 4 4 3.5 3.5 3 3 2.5 2.5 2 2 1.5 1.5 1 1 0.5 0.5 0 0 -50 -40 -30 -20 -10 -50 0 -40 -30 -20 -10 0 Jamming Power (dBm) Jamming Power(dBm) fjam = 1850 MHz; Tamb = 25 °C; f = 1575 MHz; including PCB losses. Vcc = 1.5 V Vcc = 1.8 V Vcc = 2.85 V Vcc = 3.1 V fjam = 850 MHz; Tamb = 25 °C; f = 1575 MHz; including PCB losses. (1) Vcc = 1.5 V (2) Vcc = 1.8 V (3) Vcc = 2.85 V (4) Vcc = 3.1 V Fig 13. NF versus jammer power at 850 MHz AN11573 Application note Fig 14. NF versus jammer power at 1850 MHz All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 July 2015 © NXP B.V. 2015. All rights reserved. 13 of 19 AN11573 NXP Semiconductors BGU8103 GNSS LNA EVB 5. Required Equipment In order to measure the evaluation board the following is necessary: DC Power Supply up to 30 mA at 1.5 V to 3.1 V Two RF signal generators capable of generating RF signals at the operating frequency of 1575.42 MHz, as well as the jammer frequencies 1713.42 MHz and 1851.42 MHz An RF spectrum analyzer that covers at least the operating frequency of 1575.42 MHz as well as a few of the harmonics. Up to 6 GHz should be sufficient. “Optional” a version with the capability of measuring noise figure is convenient Amp meter to measure the supply current (optional) A network analyzer for measuring gain, return loss and reverse isolation Noise figure analyzer and noise source Directional coupler Proper RF cables 6. Connections and setup The BGU8103 GNSS LNA evaluation board is fully assembled and tested. Please follow the steps below for a step-by-step guide to operate the LNA evaluation board and testing the device functions. 1. Connect the DC power supply to the Vcc and GND terminals. Set the power supply to the desired supply voltage, between 1.5 V and 3.1 V, but never exceed 3.1 V as it might damage the BGU8103. 2. Jumper JU1 is connected between the Vcc terminal of the evaluation board and the Ven pin of the BGU8103. 3. Connect the RF signal generator and the spectrum analyzer to the RF input and the RF output of the evaluation board, respectively. Do not turn on the RF output of the signal generator yet, set it to -45 dBm output power at 1575.42 MHz, set the spectrum analyzer at 1575.42 MHz center frequency and a reference level of 0 dBm. 4. Turn on the DC power supply and it should read approximately 1.2 mA. 5. Enable the RF output of the generator: The spectrum analyzer displays a tone around –27.5 dBm at 1575.42 MHz. 6. Instead of using a signal generator and spectrum analyzer one can also use a network analyzer in order to measure gain as well as in- and output return loss. 7. For noise figure evaluation, either a noise figure analyzer or a spectrum analyzer with noise option can be used. The use of a 5 dB noise source, like the Agilent 364B is recommended. When measuring the noise figure of the evaluation board, any kind of adaptors, cables etc between the noise source and the evaluation board should be minimized, since this affects the noise figure. AN11573 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 July 2015 © NXP B.V. 2015. All rights reserved. 14 of 19 AN11573 NXP Semiconductors BGU8103 GNSS LNA EVB Fig 15. Evaluation board including its connections AN11573 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 July 2015 © NXP B.V. 2015. All rights reserved. 15 of 19 AN11573 NXP Semiconductors BGU8103 GNSS LNA EVB 7. Legal information 7.1 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 7.2 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. AN11573 Application note Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Evaluation products — This product is provided on an “as is” and “with all faults” basis for evaluation purposes only. NXP Semiconductors, its affiliates and their suppliers expressly disclaim all warranties, whether express, implied or statutory, including but not limited to the implied warranties of noninfringement, merchantability and fitness for a particular purpose. The entire risk as to the quality, or arising out of the use or performance, of this product remains with customer. In no event shall NXP Semiconductors, its affiliates or their suppliers be liable to customer for any special, indirect, consequential, punitive or incidental damages (including without limitation damages for loss of business, business interruption, loss of use, loss of data or information, and the like) arising out the use of or inability to use the product, whether or not based on tort (including negligence), strict liability, breach of contract, breach of warranty or any other theory, even if advised of the possibility of such damages. Notwithstanding any damages that customer might incur for any reason whatsoever (including without limitation, all damages referenced above and all direct or general damages), the entire liability of NXP Semiconductors, its affiliates and their suppliers and customer’s exclusive remedy for all of the foregoing shall be limited to actual damages incurred by customer based on reasonable reliance up to the greater of the amount actually paid by customer for the product or five dollars (US$5.00). The foregoing limitations, exclusions and disclaimers shall apply to the maximum extent permitted by applicable law, even if any remedy fails of its essential purpose. 7.3 Trademarks Notice: All referenced brands, product names, service names and trademarks are property of their respective owners. All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 July 2015 © NXP B.V. 2015. All rights reserved. 16 of 19 AN11573 NXP Semiconductors BGU8103 GNSS LNA EVB 8. List of figures Fig 1. Fig 2. Fig 3. Fig 4. Fig 5. Fig 6. Fig 7. Fig 8. Fig 9. Fig 10. Fig 11. Fig 12. Fig 13. Fig 14. Fig 15. BGU8103 GNSS LNA evaluation board ............ 3 Circuit diagram of the BGU8103LNA evaluation board ................................................................. 5 Printed-Circuit Board layout of the BGU8103LNA evaluation board ........................ 6 Stack of the PCB material ................................. 6 1dB Gain compression under jamming measurement setup (LNA evaluation board)..... 9 Icc versus jammer power at 787 MHz ............. 10 Gain versus jammer power at 787 MHz .......... 10 Icc versus jammer power at 850 MHz ............. 11 Gain versus jammer power at 850 MHz .......... 11 Icc versus jammer power at 1850 MHz ........... 11 Gain versus jammer power at 1850 MHz ........ 11 Noise under jamming measurement setup (LNA evaluation board) ............................................ 12 NF versus jammer power at 850 MHz ............. 13 NF versus jammer power at 1850 MHz ........... 13 Evaluation board including its connections ..... 15 AN11573 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 July 2015 © NXP B.V. 2015. All rights reserved. 17 of 19 AN11573 NXP Semiconductors BGU8103 GNSS LNA EVB 9. List of tables Table 1. Table 2. Table 3. BOM of the BGU8103 GNSS LNA evaluation board ................................................................. 7 Series Inductor options ..................................... 8 Typical results measured on the evaluation Board ................................................................ 8 AN11573 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 July 2015 © NXP B.V. 2015. All rights reserved. 18 of 19 AN11573 NXP Semiconductors BGU8103 GNSS LNA EVB 10. Contents 1. 2. 3. 3.1 3.2 3.3 3.4 3.5 4. 4.1 4.2 5. 6. 7. 7.1 7.2 7.3 8. 9. 10. Introduction ......................................................... 3 General description ............................................. 4 BGU8103 GNSS LNA evaluation board ............. 4 Application Circuit .............................................. 4 PCB Layout ........................................................ 6 Bill of materials ................................................... 7 BGU8103 product description ............................ 7 Series inductor ................................................... 7 Typical LNA evaluation board results ............... 8 In-band 1dB gain compression due to 787MHz, 850MHz and 1850MHz jammers ........................ 9 Noise figure as function of jammer power at 850MHz and 1850MHz .................................... 11 Required Equipment ......................................... 14 Connections and setup ..................................... 14 Legal information .............................................. 16 Definitions ........................................................ 16 Disclaimers....................................................... 16 Trademarks ...................................................... 16 List of figures..................................................... 17 List of tables ...................................................... 18 Contents ............................................................. 19 Please be aware that important notices concerning this document and the product(s) described herein, have been included in the section 'Legal information'. © NXP B.V. 2015. All rights reserved. For more information, visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 10 July 2015 Document identifier: AN11573