Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MBC13916/D
Rev. 2.2, 05/2006
MBC13916
(Scale 2:1)
Package Information
Plastic Package
Case 1404
(SOT-343R)
MBC13916
General Purpose SiGe:C RF
Cascode Low Noise Amplifier
Ordering Information
Device
MBC13916T11
MBC13916NT1
1
1
Introduction
The MBC13916 is a cost-effective, high isolation
amplifier fabricated with an advanced RF BiCMOS
process using the SiGe:C module. It is intended to be a
replacement for the MRFIC0916 and is housed in the
smaller SOT-343R surface mount package. As with the
MRFIC0916, this device is designed for general purpose
RF applications, yet has improved high frequency gain
and noise figure. On-chip bias circuitry sets the bias
point while matching is accomplished off-chip, affording
the maximum in application flexibility.
• Usable frequency range = 100 to 2500 MHz
• 19 dB typical gain at 900 MHz, VCC = 2.7 V
• NFmin (device level) = 0.9 dB @ 900 MHz
• NFmin (device level) = 1.9 dB @ 1.9 GHz
• 2.5 dBm typical output power at 1.0 dB gain
compression at 900 MHz, VCC = 2.7 V
• 45 dB typical reverse isolation (device level) at
900 MHz, VCC = 2.7 V
• 4.7 mA typical bias current at VCC = 2.7 V
• 2.7 to 5.0 V supply
1
Device Marking or
Operating
Temperature Range
Package
916
SOT-343R
16N
SOT-343R
Refer to Table 1.
Contents
1
2
3
4
5
6
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Ordering Information . . . . . . . . . . . . . . . . . . . 2
Electrical Characteristics . . . . . . . . . . . . . . . 2
Noise Parameters . . . . . . . . . . . . . . . . . . . . . 12
Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Product Documentation . . . . . . . . . . . . . . . . 14
Freescale reserves the right to change the detail specifications as may be required to permit improvements in the design of its
products.
© Freescale Semiconductor, Inc., 2005, 2006. All rights reserved.
Ordering Information
•
•
•
•
Industry standard SOT-343R package
Device weight = 0.00642 g (typical)
Available only in tape and reel packaging
Available only in a lead free version (device number MBC13916NT1) (Refer to Table 1.)
Gnd
1
3
RF Out
RF In
2
4
Gnd
(SOT-343R package)
Figure 1. Functional Block Diagram
2
Ordering Information
Table 1 provides additional details on MBC13916 orderable parts.
Table 1. Orderable Parts Details
Operating Temp
Range (TA.)
Package
Lead Frame
RoHS
Compliant
PB-Free
MSL
Level
Solder
Temp
MBC13916T1
-40° to 85° C
Tape and Reel
Pb Plate
-
No
-
-
MBC13916NT1
-40° to 85° C
Tape and Reel
Pb Free
Yes
Yes
1
260° C
Device
3
Electrical Characteristics
Table 2. Recommended Operating Conditions
Characteristic
Symbol
Min
Typ
Max
Unit
RF Frequency
fRF
100
-
2500
MHz
Supply Voltage
VCC
2.7
-
5.0
Vdc
Table 3. Maximum Ratings
Ratings
Symbol
Value
Unit
Supply Voltage
VCC
6.0
Vdc
RF Input Power
PRF
10
dBm
MBC13916 Technical Data, Rev. 2.2
2
Freescale Semiconductor
Electrical Characteristics
Table 3. Maximum Ratings
Ratings
Symbol
Value
Unit
Power Dissipation
PDIS
100
mW
Supply Current
ICC
20
mA
Thermal Resistance, Junction to Case
RθJC
400
°C/W
Storage Temperature Range
Tstg
-65 to 150
°C
Note: Maximum Ratings and ESD
1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be
restricted to the limits in the Recommended Operating Conditions and Electrical Characteristics tables.
2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) ≤550 V and Machine Model (MM) ≤50 V.
Additional ESD data available upon request.
Table 4. Device Level Characteristics
(VCC = 2.7 V, TA = 25° C, measured in S-parameter test fixture, unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
-
16.5
10
-
|S21|2
Insertion Gain
f = 900 MHz
f = 1900 MHz
Maximum Stable Gain and/or Maximum Available Gain
[Note 1]
f = 900 MHz
f = 1900 MHz
dB
MSG, MAG
Minimum Noise Figure [Note 2]
f = 900 MHz
f = 1900 MHz
NFmin
Output Third Order Intercept Point [Note 3]
f = 900 MHz
f = 1900 MHz
OIP3
Reverse Isolation
f = 900 MHz
f = 1900 MHz
|S12|2
Unit
dB
-
24.5
14.3
-
-
0.9
1.9
-
-
13
9
-
-
-45
-31
-
dB
dBm
dB
Note: 1. Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows:
S 21
S 21
2
, if K < 1
MAG = ---------- ⎛ K ± K – 1⎞ , if K > 1, MSG = ---------⎠
S 12 ⎝
S 12
2. Device matched for best noise figure.
3. Zout matched for optimum IP3.
MBC13916 Technical Data, Rev. 2.2
Freescale Semiconductor
3
Electrical Characteristics
15
40
Pout, OUTPUT POWER (dBm)
30
VCC = 5.0 V
25
3.9 V
20
15
10
3.3 V
5.0
0
2.7 V
0
0.5
1.0
1.5
2.0
2.5
VCC = 5.0 V
10
3.9 V
2.7 V
5.0
3.3 V
0
-5.0
f = 900 MHz
-10
-15
-30
3.0
-25
-20
f, FREQUENCY (GHz)
Figure 2. GUmax versus Frequency
ICC, SUPPLY CURRENT (mA)
Pout, OUTPUT POWER (dBm)
f = 1900 MHz
VCC = 5.0 V
3.9 V
0
2.7 V
-5.0
3.3 V
-10
-15
-25
-20
-15
-10
-5.0
12
10
8.0
6.0
3.9 V
3.3 V
2.7 V
4.0
f = 900 MHz
2.0
0
-30
0
-25
-10
-5.0
3
0
30
V cc = 5.0 V
V cc = 2 .7 V
14
2.5
VCC = 5.0 V
NFmin (dB)
ICC, SUPPLY CURRENT (mA)
-15
Figure 5. Supply Current versus Input Power
16
10
6.0
-20
Pin, INPUT POWER (dBm)
Figure 4. Output Power versus Input Power
8.0
0
VCC = 5.0 V
Pin, INPUT POWER (dBm)
12
-5.0
14
5.0
-20
-30
-10
Figure 3. Output Power versus Input Power
15
10
-15
Pin, INPUT POWER (dBm)
3.9 V
3.3 V
2
25
V cc = 3 .3 V
V cc = 3 . 3 V
V cc = 2 .7 V
20
V cc = 5. 0 V
1.5
15
1
10
2.7 V
4.0
f = 1900 MHz
2.0
0
-30
Associated Gain (dB)
MAXIMUM UNILATERAL GAIN (dB)
35
-25
-20
-15
-10
-5.0
Pin, INPUT POWER (dBm)
Figure 6. Supply Current versus Input Power
0
0.5
0.500
1.000
1.500
2.000
5
2.500
f, Frequency (GHz)
Figure 7. Minimum Noise Figure and Associated Gain
versus Frequency
MBC13916 Technical Data, Rev. 2.2
4
Freescale Semiconductor
Electrical Characteristics
3.1
Applications Circuits
Figures 8 and 9 show the 900 MHz applications circuit configuration and printed circuit board. The 1.9
GHz application configuration circuit and printed circuit board are shown in Figures 10 and 11. Tables 5
and 6 represent the electrical characteristics for the tested 900 MHz and 1.9 GHz application circuits. The
bill of materials is listed in Table 7.
C5
3 pF
C4
1. 5 pF
1
C1
47 pf
3
RF Out
L2
10. 0 nH
L1
6. 8 nH
2
RF In
C2
.01µf
C3
100 pf
4
Vcc
Figure 8. 900 MHz Applications Circuit Configuration
C2
C3
L2
C1
L1
Q1
C5
C4
Figure 9. 900 MHz Printed Circuit Board
Table 5. Electrical Characteristics
(VCC = 2.7 V, TA = 25° C, fRF = 900 MHz, Tested in Circuit Shown in Figure 8, unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Small Signal Gain
S21
17
19
21
dB
Noise Figure
NF
-
1.25
-
dB
Power Output at 1.0 dB Gain Compression
P1dB
0
2.5
-
dBm
Output 3rd Order Intercept Point
OIP3
-
11
-
dBm
MBC13916 Technical Data, Rev. 2.2
Freescale Semiconductor
5
Electrical Characteristics
Table 5. Electrical Characteristics
(VCC = 2.7 V, TA = 25° C, fRF = 900 MHz, Tested in Circuit Shown in Figure 8, unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Isolation
S12
-
-42
-
dB
Supply Current
ICC
3.8
4.7
5.6
mA
L3
5. 6 nH
1
C1
3. 3 pf
3
RF Out
L2
10 nH
L1
3. 3 nH
2
RF In
C4
2. 7 pF
C3
100 pf
C2
.01µf
4
Vcc
Figure 10. 1.9 GHz Application Configuration Circuit
C2
C3
L2
C1
L1
Q1
C4
L3
Figure 11. 1.9 GHz Printed Circuit Board
Table 6. Electrical Characteristics
(VCC = 2.7 V, TA = 25°C, fRF = 1.9 GHz, Tested in Circuit Shown in Figure 10, unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Small Signal Gain
S21
9.5
11.5
13.5
dB
Noise Figure
NF
-
2.1
-
dB
Power Output at 1.0 dB Gain Compression
P1dB
-
-4.0
-
dBm
Output 3rd Order Intercept Point
OIP3
-
5.5
-
dBm
MBC13916 Technical Data, Rev. 2.2
6
Freescale Semiconductor
Electrical Characteristics
Table 6. Electrical Characteristics (continued)
(VCC = 2.7 V, TA = 25°C, fRF = 1.9 GHz, Tested in Circuit Shown in Figure 10, unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Isolation
S12
-
-28
-
dB
Supply Current
ICC
3.8
4.7
5.6
mA
Table 7. Bill of Materials1
Component
Value
Case
Manufacturer
Comments
C1
47 pF
0402
Murata
DC Block
C2
.01 uF
0402
Murata
Low freq bypass to improve IP3
C3
100 pF
0402
Murata
RF bypass
C4
1.5 pF
0402
Murata
DC block, Output match
C5
3.0 pF
0402
Murata
Output match, S22 improvement
L1
6.8 nH
0402
Toko
Input match
L2
10.0 nH
0402
Toko
DC Feedthrough, Output match
Q1
MBC13916
SOT343R
Freescale
C1
3.3 pF
0402
Murata
DC Block, Input match
C2
.01 uF
0402
Murata
Low freq bypass to improve IP3
C3
100 pF
0402
Murata
RF bypass
C4
2.7 pF
0402
Murata
DC block, Output match
L1
3.3 nH
0402
Murata
Input match
L2
10 nH
0402
Toko
DC Feedthrough, Output match
L3
5.6 nH
0402
Toko
Output match
Q1
MBC13916
SOT343R
Freescale
900 MHz Figure 8
SiGe cascode amp
1.9 GHz Figure 10
1
SiGe cascode amp
All components are RoHS compliant.
MBC13916 Technical Data, Rev. 2.2
Freescale Semiconductor
7
Electrical Characteristics
Table 8. Scattering Parameters
(VCC = 2.7 V, 50 Ω System)
f
(MHz)
S11
S21
S12
S22
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
100
0.829
-11
11.98
165
0.001
17
0.955
-4
200
0.798
-21
11.43
152
0.002
47
0.957
-7
300
0.753
-31
10.69
139
0.002
55
0.956
-11
400
0.701
-39
10.12
128
0.003
56
0.955
-14
500
0.648
-46
9.28
118
0.003
51
0.955
-18
600
0.599
-53
8.66
108
0.004
49
0.954
-22
700
0.554
-58
7.95
98
0.004
41
0.947
-26
800
0.518
-61
7.33
90
0.004
24
0.941
-30
900
0.485
-65
6.83
82
0.004
15
0.933
-34
1000
0.458
-67
6.23
74
0.004
-4
0.926
-38
1100
0.438
-69
5.78
67
0.004
-28
0.915
-43
1200
0.426
-71
5.39
60
0.005
-50
0.902
-46
1300
0.417
-72
4.97
52
0.006
-74
0.893
-51
1400
0.414
-73
4.59
46
0.008
-93
0.879
-54
1500
0.415
-74
4.31
39
0.011
-106
0.868
-58
1600
0.421
-75
3.99
32
0.014
-115
0.851
-62
1700
0.430
-76
3.66
25
0.018
-125
0.835
-66
1800
0.441
-78
3.43
19
0.022
-131
0.818
-70
1900
0.455
-80
3.16
12
0.027
-139
0.803
-73
2000
0.474
-82
2.93
5
0.033
-146
0.777
-77
2100
0.490
-85
2.70
-1
0.039
-152
0.761
-81
2200
0.504
-88
2.48
-8
0.045
-159
0.735
-85
2300
0.524
-92
2.27
-14
0.052
-163
0.707
-89
2400
0.542
-95
2.09
-21
0.059
-169
0.683
-93
2500
0.559
-98
1.90
-28
0.067
-175
0.651
-98
2600
0.572
-103
1.70
-34
0.075
180
0.624
-102
2700
0.587
-106
1.56
-40
0.083
174
0.593
-107
2800
0.603
-110
1.40
-48
0.091
169
0.562
-111
2900
0.610
-114
1.26
-55
0.098
163
0.533
-116
3000
0.613
-118
1.11
-60
0.105
160
0.501
-120
MBC13916 Technical Data, Rev. 2.2
8
Freescale Semiconductor
Electrical Characteristics
Table 9. Scattering Parameters
(VCC = 3.0 V, 50 Ω System)
f
(MHz)
S11
S21
S12
S22
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
100
0.812
-11
13.42
165
0.001
11
0.954
-3
200
0.778
-21
12.73
151
0.001
50
0.955
-7
300
0.731
-30
11.82
138
0.002
58
0.956
-11
400
0.677
-38
11.10
127
0.003
50
0.954
-14
500
0.623
-44
10.12
116
0.003
51
0.954
-18
600
0.575
-50
9.37
107
0.003
43
0.952
-22
700
0.533
-54
8.56
98
0.003
30
0.945
-26
800
0.499
-57
7.85
90
0.004
24
0.937
-30
900
0.470
-59
7.29
82
0.004
8
0.930
-34
1000
0.448
-61
6.63
74
0.003
-11
0.923
-38
1100
0.433
-63
6.14
67
0.004
-38
0.911
-42
1200
0.423
-64
5.72
60
0.005
-58
0.900
-46
1300
0.418
-65
5.27
53
0.006
-77
0.891
-50
1400
0.421
-66
4.87
47
0.008
-96
0.878
-54
1500
0.425
-67
4.56
40
0.011
-108
0.868
-58
1600
0.432
-68
4.23
34
0.014
-120
0.852
-61
1700
0.444
-70
3.89
27
0.018
-126
0.838
-65
1800
0.459
-72
3.63
21
0.022
-133
0.822
-69
1900
0.473
-74
3.35
15
0.027
-140
0.809
-73
2000
0.490
-77
3.12
8
0.033
-147
0.784
-77
2100
0.509
-80
2.87
2
0.039
-152
0.769
-80
2200
0.527
-83
2.64
-5
0.045
-159
0.744
-84
2300
0.545
-86
2.42
-11
0.051
-163
0.717
-88
2400
0.560
-90
2.23
-17
0.059
-170
0.694
-92
2500
0.579
-94
2.03
-24
0.067
-175
0.663
-97
2600
0.594
-98
1.82
-30
0.075
-180
0.637
-101
2700
0.606
-101
1.68
-36
0.083
175
0.607
-105
2800
0.620
-105
1.50
-43
0.090
169
0.576
-110
2900
0.630
-110
1.35
-50
0.097
164
0.548
-114
3000
0.636
-113
1.19
-55
0.105
160
0.516
-119
MBC13916 Technical Data, Rev. 2.2
Freescale Semiconductor
9
Electrical Characteristics
Table 10. Scattering Parameters
(VCC = 3.9 V, 50 Ω System)
f
(MHz)
S11
S21
S12
S22
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
100
0.796
-11
14.82
164
0.001
25
0.954
-3
200
0.760
-20
13.98
150
0.001
50
0.955
-7
300
0.711
-29
12.90
137
0.002
46
0.955
-11
400
0.655
-36
12.03
126
0.002
55
0.955
-14
500
0.602
-42
10.90
115
0.003
50
0.954
-18
600
0.556
-46
10.04
106
0.003
45
0.954
-22
700
0.517
-50
9.12
97
0.003
34
0.947
-26
800
0.487
-52
8.34
89
0.003
22
0.940
-30
900
0.463
-54
7.72
82
0.003
11
0.933
-34
1000
0.444
-56
7.02
74
0.003
-6
0.927
-38
1100
0.432
-57
6.49
67
0.003
-40
0.917
-42
1200
0.428
-58
6.03
61
0.005
-69
0.905
-46
1300
0.427
-59
5.55
53
0.006
-88
0.896
-50
1400
0.430
-60
5.13
48
0.008
-99
0.883
-53
1500
0.437
-61
4.81
41
0.011
-111
0.874
-57
1600
0.449
-62
4.45
35
0.014
-118
0.858
-61
1700
0.462
-64
4.09
29
0.018
-128
0.843
-64
1800
0.475
-66
3.83
23
0.022
-134
0.829
-68
1900
0.493
-69
3.53
17
0.027
-140
0.815
-72
2000
0.512
-72
3.28
10
0.032
-148
0.790
-76
2100
0.529
-75
3.03
4
0.038
-152
0.776
-79
2200
0.544
-78
2.79
-2
0.045
-159
0.752
-83
2300
0.565
-82
2.56
-8
0.051
-164
0.726
-87
2400
0.583
-85
2.37
-14
0.058
-169
0.704
-91
2500
0.599
-89
2.16
-21
0.067
-175
0.674
-96
2600
0.613
-93
1.94
-27
0.075
-179
0.648
-100
2700
0.629
-97
1.79
-32
0.083
175
0.621
-105
2800
0.643
-101
1.60
-39
0.091
170
0.589
-109
2900
0.650
-105
1.44
-46
0.098
164
0.562
-114
3000
0.653
-109
1.28
-51
0.105
160
0.531
-118
MBC13916 Technical Data, Rev. 2.2
10
Freescale Semiconductor
Electrical Characteristics
Table 11. Scattering Parameters
(VCC = 5.0 V, 50 Ω System)
f
(MHz)
S11
S21
S12
S22
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
100
0.719
-9
21.47
161
0.001
5
0.939
-3
200
0.678
-17
19.60
145
0.001
18
0.939
-7
300
0.628
-23
17.43
132
0.001
38
0.940
-10
400
0.579
-27
15.66
120
0.002
47
0.937
-14
500
0.540
-30
13.78
110
0.002
38
0.936
-18
600
0.512
-32
12.40
101
0.003
37
0.934
-22
700
0.492
-34
11.05
93
0.002
32
0.927
-26
800
0.480
-34
9.97
86
0.002
9
0.920
-30
900
0.472
-35
9.12
79
0.002
-14
0.914
-34
1000
0.470
-37
8.21
73
0.002
-54
0.908
-38
1100
0.473
-37
7.54
67
0.003
-75
0.899
-42
1200
0.478
-39
6.97
61
0.004
-90
0.890
-46
1300
0.484
-40
6.37
54
0.006
-101
0.884
-50
1400
0.496
-42
5.86
50
0.008
-114
0.875
-54
1500
0.509
-44
5.49
44
0.010
-120
0.871
-57
1600
0.521
-46
5.08
39
0.013
-128
0.858
-60
1700
0.535
-49
4.67
34
0.017
-133
0.848
-63
1800
0.552
-51
4.38
29
0.021
-139
0.838
-67
1900
0.570
-54
4.06
23
0.025
-144
0.829
-70
2000
0.587
-56
3.80
18
0.030
-150
0.807
-73
2100
0.604
-60
3.54
13
0.036
-154
0.795
-76
2200
0.621
-63
3.28
7
0.042
-160
0.772
-79
2300
0.643
-67
3.04
2
0.048
-164
0.746
-83
2400
0.658
-70
2.84
-4
0.056
-169
0.722
-87
2500
0.673
-74
2.61
-10
0.063
-175
0.687
-91
2600
0.690
-78
2.36
-16
0.071
-179
0.657
-96
2700
0.705
-82
2.19
-21
0.079
176
0.623
-101
2800
0.715
-86
1.97
-27
0.088
170
0.588
-107
2900
0.720
-91
1.78
-33
0.094
164
0.556
-113
3000
0.723
-94
1.57
-38
0.101
161
0.523
-119
MBC13916 Technical Data, Rev. 2.2
Freescale Semiconductor
11
Noise Parameters
4
Noise Parameters
Noise parameters for the MBC13916 are represented in Table 12.
Table 12. Noise Parameters
Freq
Fmin
Gamma Opt
Ga
Rn
MHz
dB
Mag
Angle
dB
(VCC = 2.7 V, Icc = 4.7 mA)
0.500
0.92
0.14
47.6
0.18
29.08
0.700
0.92
0.14
64.2
0.14
26.61
0.900
0.96
0.14
79.6
0.12
24.22
1.000
0.99
0.14
86
0.11
23.05
1.500
1.37
0.15
119.4
0.11
17.5
1.900
1.88
0.17
140.3
0.15
13.4
2.000
2.03
1.8
144.9
0.16
12.43
2.400
2.79
0.2
160.4
0.22
8.71
Vcc = 3.3 V, Icc = 6 mA
0.500
0.96
0.13
35.5
0.19
29.98
0.700
0.97
0.13
55.3
0.15
27.34
0.900
1
0.12
75.1
0.13
24.81
1.000
1.05
0.12
85.1
0.12
23.59
1.500
1.39
0.13
135.7
0.12
17.91
1.900
1.84
0.14
176.5
0.16
13.88
2.000
1.97
0.15
-173.9
0.17
12.95
2.400
2.62
0.17
-135.5
0.24
9.48
Vcc = 5 V, Icc = 10.5 mA
0.500
1.07
0.11
0.2
0.21
32.36
0.700
1.11
0.1
28,8
0.18
29.19
0.900
1.18
0.09
61.3
0.15
26.22
1.000
1.21
0.08
78.8
0.14
24.87
1.500
1.46
0.07
179.8
0.13
18.81
1.900
1.74
0.07
-83.2
0.19
14.98
2.000
1.82
0.07
-56.7
0.22
14.17
2.400
2.19
0.09
58.2
0.2
11.47
MBC13916 Technical Data, Rev. 2.2
12
Freescale Semiconductor
Packaging
5
Packaging
Figure 12. Outline Dimensions for SOT-343R
(Case 1404-01, Issue 0)
MBC13916 Technical Data, Rev. 2.2
Freescale Semiconductor
13
Product Documentation
6
Product Documentation
This data sheet is labeled as a particular type: Product Preview, Advance Information, or Technical Data.
Definitions of these types are available at: http://www.freescale.com on the documentation page.
Table 13 summarizes revisions to this document since the previous release (Rev. 2.1).
Table 13. Revision History
Location
Revision
Table 4 Device Level Characteristics
Updated Output Third Order Intercept Point.
Figure 8 900 MHz Applications Circuit Configuration
Updated.
Figure 9 1.9 GHz Application Configuration Circuit
Replaced.
Table 5 Electrical Characteristics
Updated Output 3rd Order Intercept Point.
Figure 10 1.9 GHz Application Configuration Circuit
Updated.
Table 7 Bill of Materials
Updated through out the table.
Figure 12 Outline Dimensions for SOT-343R
Updated.
MBC13916 Technical Data, Rev. 2.2
14
Freescale Semiconductor
NOTES
MBC13916 Technical Data, Rev. 2.2
Freescale Semiconductor
15
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