Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRF9030N
Rev. 12, 9/2008
RF Power Field Effect Transistor
MRF9030NR1
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device
make it ideal for large-signal, common-source amplifier applications in 26 volt
base station equipment.
945 MHz, 30 W, 26 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
• Typical Performance at 945 MHz, 26 Volts
Output Power — 30 Watts PEP
Power Gain — 20 dB
Efficiency — 41% (Two Tones)
IMD — - 31 dBc
• Integrated ESD Protection
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW
Output Power
Features
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Dual - Lead Boltdown Plastic Package Can Also Be Used As Surface
Mount.
• 200_C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
CASE 1265 - 09, STYLE 1
TO - 270- 2
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
- 0.5, +65
Vdc
Gate- Source Voltage
VGS
- 0.5, + 15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
139
0.93
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1)
Unit
RθJC
1.08
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M2 (Minimum)
Charge Device Model
C7 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
N - Channel Enhancement - Mode Lateral MOSFET
MRF9030NR1
1
Table 5. Electrical Characteristics (Tc = 25°c Unless Otherwise Noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 μAdc)
VGS(th)
2
2.9
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 250 mAdc)
VGS(Q)
3
3.8
5
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 0.7 Adc)
VDS(on)
—
0.23
0.4
Vdc
gfs
—
2.7
—
S
Input Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss
—
49
—
pF
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
27
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.2
—
pF
Two - Tone Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Gps
18
20
—
dB
Two - Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
η
37
41
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IMD
—
- 31
- 28
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IRL
—
- 13
-9
dB
Two - Tone Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Gps
—
20
—
dB
Two - Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
η
—
40.5
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IMD
—
- 31
—
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IRL
—
- 12
—
dB
On Characteristics
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture)
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
Off Characteristics
MRF9030NR1
2
RF Device Data
Freescale Semiconductor
B2
B1
+
NOT RECOMMENDED FOR NEW DESIGN
C8
RF
INPUT
C7
L1
L2
C5
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z10
Z9
C15
+
+
+
C16
C17
C18
C9
DUT Z11
Z12 Z13
Z14
Z15
Z16
Z17
Z18
RF
OUTPUT
C14
C1
C2
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
C3
C4
C6
0.260″ x 0.060″ Microstrip
0.240″ x 0.060″ Microstrip
0.500″ x 0.100″ Microstrip
0.200″ x 0.270″ Microstrip
0.330″ x 0.270″ Microstrip
0.140″ x 0.270″ x 0.520″, Taper
0.040″ x 0.520″ Microstrip
0.090″ x 0.520″ Microstrip
0.370″ x 0.520″ Microstrip (MRF9030NR1)
0.290″ x 0.520″ Microstrip (MRF9030NBR1)
0.130″ x 0.520″ Microstrip (MRF9030NR1)
0.210″ x 0.520″ Microstrip (MRF9030NBR1)
C10
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
Board
C11
C12
C13
0.360″ x 0.270″ Microstrip
0.050″ x 0.270″ Microstrip
0.110″ x 0.060″ Microstrip
0.220″ x 0.060″ Microstrip
0.100″ x 0.060″ Microstrip
0.870″ x 0.060″ Microstrip
0.240″ x 0.060″ Microstrip
0.340″ x 0.060″ Microstrip
Taconic RF - 35- 0300, εr = 3.5
Figure 1. 930 - 960 MHz Broadband Test Circuit Schematic
Table 6. 930 - 960 MHz Broadband Test Circuit Component Designations and Values
Part
Description
Part Number
NOT RECOMMENDED FOR NEW DESIGN
VDD
VGG
Manufacturer
B1
Short Ferrite Bead, Surface Mount
2743019447
Fair- Rite
B2
Long Ferrite Bead, Surface Mount
2743029446
Fair- Rite
C1, C7, C14, C15
47 pF Chip Capacitors
ATC100B470JT500XT
ATC
C2
0.6- 4.5 Variable Capacitor, Gigatrim
27271SL
Johanson
C3, C11
3.9 pF Chip Capacitors
ATC100B3R6BT500XT
ATC
C4, C12
0.8- 8.0 Variable Capacitors, Gigatrim
27291SL
Johanson
C5, C6
6.8 pF Chip Capacitors
ATC100B7R5JT500XT
ATC
C8, C16, C17
10 μF, 35 V Tantulum Chip Capacitors
T491D106K035AT
Kemet
C9, C10
10 pF Chip Capacitors
ATC100B100JT500XT
ATC
C13
1.8 pF Chip Capacitor (MRF9030NR1)
0.6- 4.5 Variable Capacitor, Gigatrim (MRF9030NBR1)
ATC100B1R8BT500XT
27271SL
ATC
Johanson
C18
220 μF Electrolytic Chip Capacitor
MCAX63V227M13X22
Multicomp
L1, L2
12.5 nH Coilcraft Inductors
A04T- 5
Coilcraft
MRF9030NR1
RF Device Data
Freescale Semiconductor
3
C18
C8
VGG
B1
VDD
B2
C15
L1
C2
C5
C4 WB1
C3
C6
C14
L2
CUT OUT AREA
C1
C16 C17
C9
WB2
C10
C11
C12
C13
900 MHz
Rev 02
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 930 - 960 MHz Broadband Test Circuit Component Layout
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
C7
MRF9030NR1
4
RF Device Data
Freescale Semiconductor
20
40
η
19
35
18
−30
IMD
17
−32
IRL
16
VDD = 26 Vdc
Pout = 30 W (PEP)
IDQ = 250 mA
Two−Tone, 100 kHz Tone Spacing
14
930
935
940
945
950
955
−34
−36
−38
960
−10
−12
−14
−16
−18
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance
20.5
300 mA
20
250 mA
19.5
VDD = 26 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
200 mA
19
18.5
0.1
−15
−20
−25
−30
−35
IDQ = 200 mA
−40
300 mA
−45
−50
250 mA
−55
1
10
100
0.1
VDD = 26 Vdc
375 mA f1 = 945 MHz
f2 = 945.1 MHz
1
100
10
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Power Gain versus Output Power
Figure 5. Intermodulation Distortion versus
Output Power
−10
22
VDD = 26 Vdc
IDQ = 250 mA
f1 = 945 MHz
f2 = 945.1 MHz
−20
−30
20
3rd Order
−40
−50
5th Order
−60
7th Order
−80
0.1
1
10
100
Gps
50
18
40
16
30
14
20
12
−70
60
10
0.1
VDD = 26 Vdc
IDQ = 250 mA
f = 945 MHz
η
1
10
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Intermodulation Distortion Products
versus Output Power
Figure 7. Power Gain and Efficiency versus
Output Power
10
0
100
η, DRAIN EFFICIENCY (%)
IDQ = 375 mA
G ps , POWER GAIN (dB)
G ps , POWER GAIN (dB)
21
IMD, INTERMODULATION DISTORTION (dBc)
21.5
NOT RECOMMENDED FOR NEW DESIGN
G ps , POWER GAIN (dB)
45
Gps
15
IMD, INTERMODULATION DISTORTION (dBc)
NOT RECOMMENDED FOR NEW DESIGN
21
IRL, INPUT RETURN
LOSS (dB)
50
IMD, INTERMODULATION
DISTORTION (dBc)
22
h , DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
MRF9030NR1
RF Device Data
Freescale Semiconductor
5
NOT RECOMMENDED FOR NEW DESIGN
G ps , POWER GAIN (dB)
20
60
Gps
40
20
18
VDD = 26 Vdc
IDQ = 250 mA
f1 = 945 MHz
f2 = 945.1 MHz
η
16
0
14
12
10
0.1
−20
−40
IMD
1
10
−60
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Power Gain, Efficiency and IMD
versus Output Power
MTTF FACTOR (HOURS X AMPS2)
1010
109
108
107
90 100 110 120 130 140 150 160 170 180 190 200 210
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 9. MTTF Factor versus Junction Temperature
NOT RECOMMENDED FOR NEW DESIGN
22
η, DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
MRF9030NR1
6
RF Device Data
Freescale Semiconductor
Zsource
f = 930 MHz
Zload
f = 960 MHz
f = 960 MHz
f = 930 MHz
VDD = 26 V, IDQ = 250 mA, Pout = 30 Watts (PEP)
f
MHz
Zload
Ω
Zsource
Ω
930
1.07 + j0.160
3.53 - j0.20
945
1.14 + j0.385
3.41 - j0.24
960
1.17 + j0.170
3.60 - j0.17
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
Note:
= Test circuit impedance as measured
from drain to ground.
Zload was chosen based on tradeoffs between gain, output
power, drain efficiency and intermodulation distortion.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
Zo = 5 Ω
load
Figure 10. Series Equivalent Source and Load Impedance
MRF9030NR1
RF Device Data
Freescale Semiconductor
7
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
PACKAGE DIMENSIONS
MRF9030NR1
8
RF Device Data
Freescale Semiconductor
MRF9030NR1
RF Device Data
Freescale Semiconductor
9
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
MRF9030NR1
10
RF Device Data
Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
12
Sept. 2008
Description
• Data sheet revised to reflect part status change, p. 1, including use of applicable overlay.
• Replaced Case Outline 1265 - 08 with 1265 - 09, Issue K, p. 1, 8 - 10. Corrected cross hatch pattern in
bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed
from Min - Max .290 - .320 to .290 Min; E3 changed from Min - Max .150 - .180 to .150 Min). Added JEDEC
Standard Package Number.
• Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part
numbers, p. 3
• Removed Fig. 3, Test Circuit Component Layout (MRF9030NBR1) and Fig. 12, Series Equivalent Source
and Load Impedance (MRF9030NBR1), renumbered Figures accordingly, p. 4 - 7
• Added Product Documentation and Revision History, p. 11
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
MRF9030NR1
RF Device Data
Freescale Semiconductor
11
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NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
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MRF9030NR1
Document Number: MRF9030N
Rev. 12, 9/2008
12
RF Device Data
Freescale Semiconductor