Document Number: MRF8S26060H Rev. 0, 4/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S26060HR3 MRF8S26060HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2620- 2690 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 450 mA, Pout = 15.5 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) hD (%) Output PAR (dB) ACPR (dBc) 2620 MHz 16.3 33.2 6.3 -37.2 2655 MHz 16.3 33.0 6.3 -37.7 2690 MHz 16.3 32.9 6.2 -37.1 2620-2690 MHz, 15.5 W AVG., 28 V W-CDMA, LTE LATERAL N-CHANNEL RF POWER MOSFETs • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2655 MHz, 78 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) • Typical Pout @ 1 dB Compression Point ] 60 Watts CW Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate-Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • Optimized for Doherty Applications • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. CASE 465I-02, STYLE 1 NI-400-240 MRF8S26060HR3 CASE 465J-02, STYLE 1 NI-400S-240 MRF8S26060HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage VDSS -0.5, +65 Vdc Gate-Source Voltage VGS -6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg -65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Symbol Value (2,3) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 76°C, 15.5 W CW, 28 Vdc, IDQ = 450 mA, 2655 MHz Case Temperature 80°C, 60 W CW, 28 Vdc, IDQ = 450 mA, 2655 MHz Unit °C/W RθJC 1.0 0.90 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2010. All rights reserved. RF Device Data Freescale Semiconductor MRF8S26060HR3 MRF8S26060HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22-A114) 2 (Minimum) Machine Model (per EIA/JESD22-A115) A (Minimum) Charge Device Model (per JESD22-C101) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 86 μAdc) VGS(th) 1.2 1.9 2.7 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 450 mAdc, Measured in Functional Test) VGS(Q) 2.0 2.7 3.5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) 0.1 0.18 0.3 Vdc Off Characteristics On Characteristics Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 450 mA, Pout = 15.5 W Avg., f = 2690 MHz, Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Gps 15.0 16.3 18.0 dB Drain Efficiency ηD 30.0 32.9 — % PAR 5.8 6.2 — dB ACPR — -37.1 -34.5 dBc IRL — -16 -10 dB Output Peak-to-Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 450 mA, Pout = 15.5 W Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency Gps (dB) hD (%) Output PAR (dB) ACPR (dBc) IRL (dB) 2620 MHz 16.3 33.2 6.3 -37.2 - 16 2655 MHz 16.3 33.0 6.3 -37.7 -17 2690 MHz 16.3 32.9 6.2 -37.1 -16 1. Part internally matched both on input and output. (continued) MRF8S26060HR3 MRF8S26060HSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 450 mA, 2620-2690 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 60 — — 16 — W IMD Symmetry @ 52 W PEP, Pout where IMD Third Order Intermodulation ` 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) VBWres — 80 — MHz Gain Flatness in 70 MHz Bandwidth @ Pout = 15.5 W Avg. GF — 0.2 — dB Gain Variation over Temperature (-30 °C to +85°C) ΔG — 0.014 — dB/°C ΔP1dB — 0.006 — dBm/°C Output Power Variation over Temperature (-30 °C to +85°C) MHz MRF8S26060HR3 MRF8S26060HSR3 RF Device Data Freescale Semiconductor 3 C9 C8 C11 C16 C12 B1 + C15 C3 C17 C2 R1 C1 C5 C7 CUT OUT AREA C6 MRF8S26060 Rev. 4 C4 C10 C13 C14 Figure 1. MRF8S26060HR3(HSR3) Test Circuit Component Layout Table 5. MRF8S26060HR3(HSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 RF Ferrite Bead MPZ2012S300AT000 TDK C1, C2, C3, C4, C5 5.6 pF Chip Capacitors ATC100B5R6CT500XT ATC C6, C7 0.3 pF Chip Capacitors ATC100B0R3BT500XT ATC C8, C9, C10 10 μF, 50 V Chip Capacitors C5750X7R1H106KT TDK C11, C13 22 μF, 50 V Chip Capacitors C5750JF1H226ZT TDK C12, C14 22 μF, 35 V Tantalum Capacitors T491X226K035AT Kemet C15 680 nF, 100 V Chip Capacitor C3225X7R2A684KT TDK C16 220 μF, 63 V Electrolytic Capacitor MCGPR63V227M10X21 Multicomp C17 1 nF, 250 V Chip Capacitor C2012X7R2102KT TDK R1 12 Ω, 1/4 W Chip Resistor CRCW120612R0FKEA Vishay PCB 0.030″, εr = 2.55 CuClad 25064-0300-55-22 Arlon MRF8S26060HR3 MRF8S26060HSR3 4 RF Device Data Freescale Semiconductor 17.4 35 ηD 34 33 16.6 32 31 Gps -35 0 -5 16 -36 PARC -37 15.8 -38 16.4 16.2 ACPR 15.6 15.4 2570 -39 -20 IRL 2590 2610 2630 2650 2670 2690 2710 -10 -15 -40 2730 -25 0 -0.5 -1 -1.5 PARC (dB) VDD = 28 Vdc, Pout = 15.5 W (Avg.), IDQ = 450 mA Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF ACPR (dBc) Gps, POWER GAIN (dB) 17 16.8 IRL, INPUT RETURN LOSS (dB) 17.2 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS -2 -2.5 f, FREQUENCY (MHz) Figure 2. Output Peak-to-Average Ratio Compression (PARC) Broadband Performance @ Pout = 15.5 Watts Avg. IMD, INTERMODULATION DISTORTION (dBc) -1 0 VDD = 28 Vdc, Pout = 52 W (PEP), IDQ = 450 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 2655 MHz -2 0 IM3-U -3 0 IM3-L IM5-U -4 0 IM5-L -5 0 IM7-L IM7-U -60 1 10 100 TWO-T ONE SPACING (MHz) Figure 3. Intermodulation Distortion Products versus Two-T one Spacing 14 13 12 11 -1 dB = 15 W 60 -20 54 -25 ACPR -1 ηD -2 dB = 20 W 48 -2 -3 dB = 27 W 42 -3 Gps V DD = 28 Vdc IDQ = 450 mA f = 2655 MHz, Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF -4 -5 -6 10 20 30 40 36 -30 -35 ACPR (dBc) 15 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) 16 0 ηD, DRAIN EFFICIENCY (%) 17 -40 30 -45 24 -50 PARC 50 60 Pout, OUTPUT POWER (WATTS) Figure 4. Output Peak-to-Average Ratio Compression (PARC) versus Output Power MRF8S26060HR3 MRF8S26060HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 20 60 0 50 -10 ηD 40 2620 MHz 2655 MHz 2690 MHz 14 30 12 20 Gps 2620 MHz 2655 MHz 2690 MHz 10 10 8 1 -30 -40 -50 -60 0 100 10 -20 ACPR (dBc) ACPR 16 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) VDD = 28 Vdc, IDQ = 450 mA, Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth, Input Signal 18 PAR = 7.5 dB @ 0.01% Probability on CCDF Pout, OUTPUT POWER (WATTS) AVG. Figure 5. Single-Carrier W-CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 0 18 Gain -3 12 -6 9 -9 6 IRL (dB) GAIN (dB) 15 -12 VDD = 28 Vdc Pin = 0 dBm IDQ = 450 mA 3 0 2200 2300 2400 IRL -15 2500 2600 2700 2800 2900 -18 3000 f, FREQUENCY (MHz) Figure 6. Broadband Frequency Response W-CDMA TEST SIGNAL 100 10 0 -10 3.84 MHz Channel BW -20 1 Input Signal -30 0.1 (dB) PROBABILITY (%) 10 0.01 W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0.001 0.0001 0 1 2 3 4 5 6 -40 -50 -60 +ACPR in 3.84 MHz Integrated BW -ACPR in 3.84 MHz Integrated BW -70 -80 7 8 9 PEAK-T O-A VERAGE (dB) Figure 7. CCDF W-CDMA IQ Magnitude Clipping, Single-Carrier Test Signal 10 -90 -100 -9 -7.2 -5.4 -3.6 -1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) Figure 8. Single-Carrier W-CDMA Spectrum MRF8S26060HR3 MRF8S26060HSR3 6 RF Device Data Freescale Semiconductor VDD = 28 Vdc, IDQ = 450 mA, Pout = 15.5 W Avg. f MHz Zsource W Zload W 2570 8.55 - j8.59 6.29 - j8.92 2590 8.68 - j8.39 6.27 - j8.73 2610 8.84 - j8.21 6.27 - j8.54 2630 8.99 - j8.07 6.26 - j8.37 2650 9.14 - j7.84 6.26 - j8.20 2670 9.37 - j7.70 6.24 - j8.06 2690 9.58 - j7.61 6.21 - j7.91 2710 9.80 - j7.53 6.17 - j7.78 2730 10.02 - j7.48 6.13 - j7.65 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF8S26060HR3 MRF8S26060HSR3 RF Device Data Freescale Semiconductor 7 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS VDD = 28 Vdc, IDQ = 450 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle 58.5 57 Pout, OUTPUT POWER (dBm) 55.5 54 Ideal 52.5 2655 MHz 51 2655 MHz 49.5 48 Actual 2620 MHz 46.5 2620 MHz 45 2690 MHz 2690 MHz 43.5 42 26 27 28 29 30 31 32 33 34 35 36 37 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V P1dB P3dB f (MHz) Watts dBm Watts dBm 2620 73 48.7 89 49.5 2655 73 48.6 88 49.4 2690 73 48.6 89 49.5 Test Impedances per Compression Level f (MHz) Zsource Ω Zload Ω 2620 P1dB 8.45 - j15.80 3.40 - j7.26 2655 P1dB 12.77 - j16.85 3.68 - j7.16 2690 P1dB 12.64 - j14.91 3.27 - j7.45 Figure 10. Pulsed CW Output Power versus Input Power @ 28 V MRF8S26060HR3 MRF8S26060HSR3 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF8S26060HR3 MRF8S26060HSR3 RF Device Data Freescale Semiconductor 9 MRF8S26060HR3 MRF8S26060HSR3 10 RF Device Data Freescale Semiconductor MRF8S26060HR3 MRF8S26060HSR3 RF Device Data Freescale Semiconductor 11 MRF8S26060HR3 MRF8S26060HSR3 12 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Apr. 2010 Description • Initial Release of Data Sheet MRF8S26060HR3 MRF8S26060HSR3 RF Device Data Freescale Semiconductor 13 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1-800-521-6274 or +1-480-768-2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2010. All rights reserved. MRF8S26060HR3 MRF8S26060HSR3 Document Number: MRF8S26060H Rev. 0, 4/2010 14 RF Device Data Freescale Semiconductor