EFC6604R D

EFC6604R
Power MOSFET
for 1-Cell Lithium-ion Battery Protection
12V, 9.0mΩ, 13A, Dual N-Channel
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This Power MOSFET features a low on-state resistance. This device is
suitable for applications such as power switches of portable machines. Best
suited for 1-cell lithium-ion battery applications.
Features
 2.5V drive
 2kV ESD HBM
 Common-Drain Type
 ESD Diode-Protected Gate
 Pb-Free, Halogen Free and RoHS compliance
VSSS
RSS(on) Max
9.0mΩ@ 4.5V
12V
10.0mΩ@ 3.8V
9.7mΩ@ 4.0V
17.7mΩ@ 2.5V
ELECTRICAL CONNECTION
N-Channel
4, 6
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS at Ta = 25C (Note 1)
Symbol
VSSS
VGSS
IS
Value
12
12
13
Unit
V
V
A
Source Current (DC)
Source Current (Pulse)
A
ISP
60
PW10s, duty cycle1%
Total Dissipation
PT
Surface mounted on ceramic substrate
1.6
W
2
(5000mm  0.8mm)
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
55 to +150
C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient
Surface mounted on ceramic substrate
2
(5000mm  0.8mm)
13A
12.7mΩ@ 3.1V
Applications
 1-Cell Lithium-ion Battery Charging and Discharging Switch
Parameter
Source to Source Voltage
Gate to Source Voltage
IS Max
Rg
5
Rg
2
Rg=200Ω
1, 3
1 : Source1
2 : Gate1
3 : Source1
4 : Source2
5 : Gate2
6 : Source2
MARKING
MD
Symbol
Value
RJA
Unit
78.1
LOT No.
C/W
ORDERING INFORMATION
See detailed ordering and shipping
information on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
March 2016 - Rev. 2
1
Publication Order Number :
EFC6604R/D
EFC6604R
ELECTRICAL CHARACTERISTICS at Ta  25C (Note 2)
Parameter
Symbol
Conditions
Ratings
min
typ
max
Unit
Source to Source Breakdown
Voltage
V(BR)SSS
IS=1mA, VGS=0V
Test Circuit 1
Zero-Gate Voltage Source Current
ISSS
VSS=10V, VGS=0V
Test Circuit 1
Gate to Source Leakage Current
IGSS
VGS(th)
gFS
VGS=±8V, VSS=0V
VSS=6V, IS=1mA
Test Circuit 3
VSS=6V, IS=3A
Test Circuit 4
RSS(on)1
RSS(on)2
RSS(on)3
IS=3A, VGS=4.5V
IS=3A, VGS=4.0V
Test Circuit 5
6.0
7.5
9.0
m
Test Circuit 5
6.4
8.1
9.7
m
IS=3A, VGS=3.8V
Test Circuit 5
6.7
8.4
10.0
m
RSS(on)4
RSS(on)5
IS=3A, VGS=3.1V
Test Circuit 5
7.8
9.8
12.7
m
IS=3A, VGS=2.5V
Test Circuit 5
10.0
12.6
17.7
m
Gate Threshold Voltage
Forward Transconductance
Static Source to Source On-State
Resistance
Turn-ON Delay Time
td(on)
Rise Time
tr
Turn-OFF Delay Time
td(off)
Fall Time
tf
Total Gate Charge
Qg
12
V
Test Circuit 2
VSS=6V, VGS=4.5V, IS=3A
Test Circuit 6
VSS=6V, VGS=4.5V, IS=13A
Test Circuit 7
0.5
1
A
1.0
A
1.3
V
13.7
S
300
ns
1200
ns
5200
ns
3900
ns
29
nC
Forward Source to Source Voltage
IS=3A, VGS=0V
Test Circuit 8
0.75
1.2
V
VF(S-S)
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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EFC6604R
Test circuits are example of measuring FET1 side
Test Circuit 2
IGSS
Test Circuit 1
VSSS / ISSS
S2
S2
G2
G2
A
G1
VSS
G1
A
VGS
S1
S1
Test Circuit 3
VGS(th)
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
Test Circuit 4
gFS
S2
S2
G2
G2
A
A
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
G1
VGS
G1
VSS
VGS
S1
VSS
S1
Test Circuit 6
td(on), tr, td(off), tf
Test Circuit 5
RSS(on)
S2
S2
IS
RL
G2
G2
V
V
G1
G1
VGS
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
VSS
S1
S1
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
PG
Test Circuit 8
VF(S-S)
Test Circuit 7
Qg
S2
S2
IS
A
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
G2
G2
V
IG =1mA
G1
RL
VGS=0V
S1
S1
PG
G1
VSS
When FET2 is measured, the position of FET1 and FET2 is switched.
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When FET1 is
measured,+4.5V is added to
VGS of FET2.
EFC6604R
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EFC6604R
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EFC6604R
PACKAGE DIMENSIONS
unit : mm
WLCSP6 1.91x1.46 / EFCP1915-6CE-020
CASE 614AC
ISSUE B
D
A
PIN 1
REFERENCE
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
DIM
A
b
D
E
e
E
0.05 C
2X
0.05 C
2X
TOP VIEW
A
0.05 C
RECOMMENDED
SOLDERING FOOTPRINT*
0.05 C
SIDE VIEW
0.05
M
C
SEATING
PLANE
PACKAGE
OUTLINE
e
b
6X
MILLIMETERS
MIN
MAX
0.22
0.18
0.27
0.33
1.91 BSC
1.46 BSC
0.65 BSC
1
C A B
2
3
0.65
PITCH
e
0.65
PITCH
1: Source1
6
2: Gate1
5
0.30
DIMENSIONS: MILLIMETERS
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
4
BOTTOM VIEW
3: Source1
6X
1
4: Source2
5: Gate2
6: Source2
ORDERING INFORMATION
Device
EFC6604R-TR
Marking
MD
Package
WLCSP6 1.91x1.46 /
EFCP1915-6CE-020
(Pb-Free / Halogen Free)
Shipping (Qty / Packing)
5,000 / Tape & Reel
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
Note on usage : Since the EFC6604R is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects. Please contact sales for use except the designated application.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all
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