Freescale Semiconductor Technical Data Document Number: MMRF2004NB Rev. 0, 12/2013 RF LDMOS Wideband Integrated Power Amplifier MMRF2004NBR1 The MMRF2004NB wideband integrated circuit is designed with on--chip matching that makes it usable from 2300 to 2700 MHz. This multi--stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats. Typical WiMAX Performance: VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 W Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain — 28.5 dB Power Added Efficiency — 17% Device Output Signal PAR — 9 dB @ 0.01% Probability on CCDF ACPR @ 8.5 MHz Offset — --50 dBc in 1 MHz Channel Bandwidth Driver Applications 2500--2700 MHz, 4 W AVG., 28 V WiMAX RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER Typical WiMAX Performance: VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 26 dBm Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain — 27.8 dB Power Added Efficiency — 3.2% Device Output Signal PAR — 9 dB @ 0.01% Probability on CCDF ACPR @ 8.5 MHz Offset — --56 dBc in 1 MHz Channel Bandwidth Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 40 W CW Output Power (3 dB Input Overdrive from Rated Pout) Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 100 mW to 5 W CW Pout Typical Pout @ 1 dB Compression Point ≃ 25 W CW Features TO--272WB--16 PLASTIC 100% PAR Tested for Guaranteed Output Power Capability Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters On--Chip Matching (50 Ohm Input, DC Blocked) Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) Integrated ESD Protection 225C Capable Plastic Package In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel. VDS1 RFin VGS1 VGS2 RFout/VDS2 Quiescent Current Temperature Compensation (1) VDS1 Figure 1. Functional Block Diagram GND VDS1 NC NC NC 1 2 3 4 5 16 15 GND NC RFin 6 14 RFout/VDS2 NC VGS1 VGS2 VDS1 GND 7 8 9 10 11 13 12 NC GND (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 2. Pin Connections 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987. Freescale Semiconductor, Inc., 2013. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MMRF2004NBR1 1 Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDS --0.5, +65 Vdc Gate--Source Voltage VGS --0.5, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg -- 65 to +150 C TC 150 C Case Operating Temperature Operating Junction Temperature (1) Input Power TJ 225 C Pin 22 dBm Symbol Value (2) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case RJC C/W WiMAX Application (Case Temperature 75C, Pout = 4 W Avg.) Stage 1, 28 Vdc, IDQ1 = 77 mA Stage 2, 28 Vdc, IDQ2 = 275 mA 5.9 1.4 CW Application (Case Temperature 81C, Pout = 25 W CW) Stage 1, 28 Vdc, IDQ1 = 77 mA Stage 2, 28 Vdc, IDQ2 = 275 mA 5.5 1.3 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1B Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) II Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 C Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) IGSS — — 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 20 Adc) VGS(th) 1.2 1.9 2.7 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, IDQ1 = 77 mA) VGS(Q) — 2.7 — Vdc Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ1 = 77 mAdc, Measured in Functional Test) VGG(Q) 12.5 15.8 19.5 Vdc Characteristic Stage 1 -- Off Characteristics Stage 1 -- On Characteristics 1. Continuous use at maximum temperature will affect MTTF. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. (continued) MMRF2004NBR1 2 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) IGSS — — 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 80 Adc) VGS(th) 1.2 1.9 2.7 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, IDQ2 = 275 mAdc) VGS(Q) — 2.7 — Vdc Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ2 = 275 mAdc, Measured in Functional Test) VGG(Q) 11 14 18 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 800 mAdc) VDS(on) 0.15 0.47 0.8 Vdc Coss — 111 — pF Stage 2 -- Off Characteristics Stage 2 -- On Characteristics Stage 2 -- Dynamic Characteristics (1) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 W Avg., f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ 8.5 MHz Offset. Power Gain Gps 25.5 28.5 30.5 dB Power Added Efficiency PAE 15 17 — % Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR — 9 — dB ACPR — --50 --46 dBc IRL — --15 --10 dB Adjacent Channel Power Ratio Input Return Loss Typical Performances OFDM Signal -- 10 MHz Channel Bandwidth (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 W Avg., f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Relative Constellation Error (2) Error Vector Magnitude (2) 1. Part internally matched both on input and output. 2. RCE = 20Log(EVM/100) RCE — --33 — dB EVM — 2.2 — % rms (continued) MMRF2004NBR1 RF Device Data Freescale Semiconductor, Inc. 3 Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, 2500--2700 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 25 — — 50 — W IMD Symmetry @ 27 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) VBWres — 90 — MHz Gain Flatness in 200 MHz Bandwidth @ Pout = 4 W Avg. GF — 0.5 — dB Average Deviation from Linear Phase in 200 MHz Bandwidth @ Pout = 25 W CW — 2.1 — Delay — 2.3 — ns Part--to--Part Insertion Phase Variation @ Pout = 25 W CW, f = 2600 MHz, Six Sigma Window — 22 — Gain Variation over Temperature (--30C to +85C) G — 0.036 — dB/C P1dB — 0.003 — dBm/C Average Group Delay @ Pout = 25 W CW, f = 2600 MHz Output Power Variation over Temperature (--30C to +85C) MHz Typical Driver Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 26 dBm Avg., f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ 8.5 MHz Offset. Power Gain Gps — 27.8 — dB Power Added Efficiency PAE — 3.2 — % Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Relative Constellation Error @ Pout = 1.25 W Avg. (1) PAR — 9 — dB ACPR — --56 — dBc IRL — --13 — dB RCE — --40 — dB 1. RCE = 20Log(EVM/100) MMRF2004NBR1 4 RF Device Data Freescale Semiconductor, Inc. VDD1 VD2 B1 C17 C16 C9 C15 28 V C8 C14 C7 RF INPUT 1 2 3 4 5 Z1 Z2 Z3 Z4 C5 C1 VG1 R5 10 11 NC C13 NC 16 C12 NC 15 NC NC NC 7 NC 8 9 C6 DUT Z13 14 6 C4 R4 NC Z5 Z6 Z7 Z8 Z9 Z10 C10 Quiescent Current Temperature Compensation Z11 Z12 Z14 RF OUTPUT C11 NC 13 NC 12 C2 R6 C3 VG2 R1 R2 R3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 0.500 x 0.027 Microstrip 0.075 x 0.127 Microstrip 1.640 x 0.027 Microstrip 0.100 x 0.042 Microstrip 0.151 x 0.268 Microstrip 0.025 x 0.268 x 0.056 Taper 0.050 x 0.056 Microstrip 0.356 x 0.056 Microstrip Z9 Z10 Z11 Z12 Z13* Z14 PCB 0.040 x 0.061 Microstrip 0.020 x 0.050 Microstrip 0.050 x 0.050 Microstrip 0.050 x 0.027 Microstrip 0.338 x 0.020 Microstrip 1.551 x 0.027 Microstrip Rogers R04350B, 0.0133, r = 3.48 * Line length includes microstrip bends Figure 3. MMRF2004NBR1 Test Circuit Schematic Table 6. MMRF2004NBR1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 47 , 100 MHz Short Ferrite Bead 2743019447 Fair--Rite C1, C4, C7, C12, C15 6.8 pF Chip Capacitors ATC600S6R8CT250XT ATC C2, C5, C8, C13 10 nF Chip Capacitors C0603C103J5RAC Kemet C3, C6, C9, C14 1 F, 50 V Chip Capacitors GRM32RR71H105KA01B Murata C10 2.4 pF Chip Capacitor ATC600S2R4BT250XT ATC C11 3.3 pF Chip Capacitor ATC600S3R3BT250XT ATC C16, C17 10 F, 50 V Chip Capacitors GRM55DR61H106KA88B Murata R1, R4 12 K, 1/4 W Chip Resistors CRCW12061202FKEA Vishay R2, R3, R5, R6 1 K, 1/4 W Chip Resistors CRCW12061001FKEA Vishay MMRF2004NBR1 RF Device Data Freescale Semiconductor, Inc. 5 B1 C16 C17 C15 C9 C8 C7 R5 C1 R6 R1 R2 R3 VG1 VG2 C2 C6 C3 CUT OUT AREA R4 C12 C13 C4 C5 C14 C10 C11 Figure 4. MMRF2004NBR1 Test Circuit Component Layout MMRF2004NBR1 6 RF Device Data Freescale Semiconductor, Inc. Gps 16 28 15 V = 28 Vdc, Pout = 4 W (Avg.), IDQ1 = 77 mA, IDQ2 = 275 mA 27.8 DD OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel 27.6 Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF 27.4 14 27.2 ACPR 27 26.8 --16 --54 --18 --55 --56 PARC --57 IRL 26.6 2500 --53 2525 2550 2575 2600 2625 2650 2675 --58 2700 --20 --22 --24 --26 --0.2 --0.4 --0.6 --0.8 --1 PARC (dB) Gps, POWER GAIN (dB) 17 IRL, INPUT RETURN LOSS (dB) 28.4 28.2 18 PAE ACPR (dBc) 28.6 PAE, POWER ADDED EFFICIENCY (%) TYPICAL CHARACTERISTICS --1.2 f, FREQUENCY (MHz) PAE Gps 3 2.5 28 VDD = 28 Vdc, Pout = 26 dBm (Avg.), IDQ1 = 77 mA, IDQ2 = 275 mA 27.8 OFDM 802.16d, 64 QAM 3/ , 4 Bursts, 10 MHz Channel Bandwidth 4 27.6 Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF 2 --56 --10 27.4 --57 --15 27.2 27 1.5 PARC --58 ACPR --59 26.8 --60 IRL 26.6 2500 2525 2550 2575 2600 2625 2650 2675 ACPR (dBc) Gps, POWER GAIN (dB) 28.2 --61 2700 --20 --25 --30 --35 --0.2 --0.4 --0.6 --0.8 --1 PARC (dB) 3.5 28.4 IRL, INPUT RETURN LOSS (dB) 28.6 PAE, POWER ADDED EFFICIENCY (%) Figure 5. WiMAX Broadband Performance @ Pout = 4 Watts Avg. --1.2 f, FREQUENCY (MHz) Figure 6. WiMAX Broadband Performance @ Pout = 26 dBm Avg. 29 344 mA 28 275 mA 27 30 IDQ2 = 412 mA 206 mA 26 25 137 mA VDD = 28 Vdc IDQ1 = 77 mA f = 2600 MHz 24 IDQ1 = 103 mA 29 Gps, POWER GAIN (dB) Gps, POWER GAIN (dB) 30 96 mA 28 77 mA 27 58 mA 26 25 39 mA VDD = 28 Vdc IDQ2 = 275 mA f = 2600 MHz 24 23 23 0.1 1 10 100 0.1 1 10 100 Pout, OUTPUT POWER (WATTS) CW Pout, OUTPUT POWER (WATTS) CW Figure 7. Power Gain versus Output Power @ IDQ1 = 77 mA Figure 8. Power Gain versus Output Power @ IDQ2 = 275 mA MMRF2004NBR1 RF Device Data Freescale Semiconductor, Inc. 7 IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS 0 VDD = 28 Vdc, Pout = 27 W (PEP), IDQ1 = 77 mA IDQ2 = 275 mA, Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2600 MHz --10 --20 IM3--U --30 IM3--L --40 IM5--L IM5--U --50 IM7--L IM7--U --60 10 1 100 TWO--TONE SPACING (MHz) 28.5 0 28 27.5 27 26.5 26 30 ACPR --1 Gps --1 dB = 4.01 W --2 --5 25 20 15 --3 --4 --2 dB = 6.21 W 1 10 PARC --3 dB = 8.59 W --30 35 VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA f = 2600 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% PAE Probability on CCDF --35 --40 --45 --50 --55 --60 5 3 6 9 12 ACPR (dBc) 1 PAE, POWER ADDED EFICIENCY (%) 29 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) Figure 9. Intermodulation Distortion Products versus Tone Spacing 15 Pout, OUTPUT POWER (WATTS) Figure 10. Output Peak--to--Average Ratio Compression (PARC) versus Output Power VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA f = 2600 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF 40 35 TC = --40_C 25_C 20 --25 85_C --40 Gps 15 --45 PAE 10 --50 ACPR 5 0 --20 --30 25_C --40_C --35 30 25 --15 --40_C 25_C 85_C 85_C 1 ACPR (dBc) PAE, POWER ADDED EFFICIENCY (%), Gps, POWER GAIN (dB) 45 --55 10 50 --60 Pout, OUTPUT POWER (WATTS) AVG. WiMAX Figure 11. WiMAX, ACPR, Power Gain and Power Added Efficiency versus Output Power MMRF2004NBR1 8 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 25 0 --10 13 --20 --30 7 S11 (dB) S21 (dB) S21 19 S11 --40 1 --5 1800 VDD = 28 Vdc IDQ1 = 77 mA, IDQ2 = 275 mA 2000 2200 2400 2600 2800 3000 3200 --50 3400 f, FREQUENCY (MHz) Figure 12. Broadband Frequency Response MMRF2004NBR1 RF Device Data Freescale Semiconductor, Inc. 9 WIMAX TEST SIGNAL 100 --10 10 --20 --30 1 --40 0.1 (dB) PROBABILITY (%) Input Signal 0.01 OFDM 802.16d, 64 QAM 3/4, 4 Bursts 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF 0.001 0.0001 10 MHz Channel BW 2 0 4 6 --50 --60 --70 8 PEAK--TO--AVERAGE (dB) Figure 13. OFDM 802.16d Test Signal 10 --80 --90 --20 ACPR in 1 MHz Integrated BW --15 --10 ACPR in 1 MHz Integrated BW --5 0 5 10 15 20 f, FREQUENCY (MHz) Figure 14. WiMAX Spectrum Mask Specifications MMRF2004NBR1 10 RF Device Data Freescale Semiconductor, Inc. Zo = 50 f = 2700 MHz f = 2700 MHz Zload Zsource f = 2500 MHz f = 2500 MHz VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 W Avg. f MHz Zsource Zload 2500 36.381 -- j4.271 5.717 -- j3.618 2525 36.041 -- j3.328 5.624 -- j3.187 2550 35.753 -- j2.363 5.578 -- j2.770 2575 35.516 -- j1.380 5.589 -- j2.412 2600 35.333 -- j0.381 5.586 -- j2.088 2625 35.203 + j0.635 5.579 -- j1.807 2650 35.126 + j1.664 5.552 -- j1.559 2675 35.104 + j2.707 5.564 -- j1.335 2700 35.138 + j3.760 5.568 -- j1.164 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance MMRF2004NBR1 RF Device Data Freescale Semiconductor, Inc. 11 Table 7. Common Source S--Parameters (VDD = 28 V, IDQ1 = 77 mA, IDQ2 = 275 mA, TA = 25C, 50 Ohm System) S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 1500 0.735 61.0 0.001 --167.6 0.000501 26.6 0.992 167.9 1550 0.729 53.3 0.004 --146.0 0.000361 34.7 0.993 166.3 1600 0.715 46.5 0.014 --146.4 0.000114 109.5 0.991 164.6 1650 0.695 39.8 0.039 --152.5 0.000385 148.4 0.992 162.7 1700 0.665 32.9 0.110 --166.8 0.000773 155.6 0.989 160.5 1750 0.619 25.0 0.299 169.4 0.00134 153.2 0.979 157.8 1800 0.549 15.1 0.708 134.4 0.00198 143.0 0.944 155.2 1850 0.452 2.6 1.335 96.3 0.00250 131.2 0.903 153.9 1900 0.332 --14.4 2.195 62.1 0.00290 121.7 0.879 153.0 1950 0.199 --40.1 3.445 32.7 0.00320 113.8 0.847 151.0 2000 0.089 --91.9 5.724 4.8 0.00345 108.5 0.817 147.7 2050 0.078 167.4 10.041 --26.2 0.00382 107.0 0.749 140.6 2100 0.116 90.3 19.072 --65.1 0.00525 105.3 0.571 125.2 2150 0.170 --13.2 32.642 --126.0 0.00781 77.9 0.054 160.2 2200 0.192 --93.2 31.339 171.3 0.00640 41.0 0.555 --144.4 2250 0.177 --123.0 26.174 130.3 0.00432 24.9 0.726 --160.3 2300 0.163 --132.6 23.605 98.7 0.00294 22.3 0.770 --167.1 2350 0.153 --140.5 22.427 70.0 0.00224 31.0 0.789 --170.1 2400 0.119 --153.6 21.922 41.7 0.00208 42.5 0.800 --171.0 2450 0.059 --165.3 21.172 14.2 0.00216 48.9 0.820 --171.2 2500 0.014 --50.7 20.172 --12.5 0.00227 48.9 0.850 --171.3 2550 0.055 --55.0 19.222 --39.5 0.00213 51.4 0.889 --171.7 2600 0.056 --84.7 17.366 --66.8 0.00209 57.8 0.933 --173.2 2650 0.029 177.4 14.562 --91.5 0.00247 65.6 0.961 --175.8 2700 0.069 103.3 12.199 --111.7 0.00286 62.2 0.968 --178.0 2750 0.122 84.1 10.485 --130.4 0.00308 56.3 0.969 --179.5 2800 0.287 59.8 8.086 --154.4 0.00326 50.9 0.969 179.3 2850 0.184 --5.4 7.102 --152.5 0.00292 39.2 0.966 178.6 2900 0.129 --17.4 6.753 --169.3 0.00256 38.6 0.969 178.0 2950 0.128 --41.0 6.107 175.4 0.00232 38.5 0.970 177.4 3000 0.164 --65.7 5.445 160.8 0.00213 39.9 0.972 176.9 3050 0.223 --86.2 4.867 146.7 0.00196 42.0 0.972 176.4 3100 0.297 --100.4 4.363 133.2 0.00183 46.0 0.973 176.0 3150 0.374 --110.4 3.918 120.0 0.00176 51.4 0.974 175.5 3200 0.447 --118.0 3.534 107.2 0.00181 56.5 0.974 174.9 3250 0.515 --123.4 3.198 95.3 0.00191 60.9 0.975 174.3 3300 0.563 --128.0 2.951 83.3 0.00211 58.8 0.975 173.7 3350 0.619 --131.8 2.761 71.2 0.00206 63.0 0.976 173.0 3400 0.651 --136.0 2.581 58.8 0.00218 64.8 0.975 172.3 3450 0.671 --140.1 2.418 46.0 0.00237 68.3 0.975 171.6 (continued) MMRF2004NBR1 12 RF Device Data Freescale Semiconductor, Inc. Table 7. Common Source S--Parameters (VDD = 28 V, IDQ1 = 77 mA, IDQ2 = 275 mA, TA = 25C, 50 Ohm System) (continued) S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 3500 0.679 --144.4 2.257 32.6 0.00265 68.5 0.974 171.0 3550 0.677 --147.9 2.054 19.2 0.00280 65.0 0.976 170.5 3600 0.661 --153.5 1.851 5.0 0.00281 67.1 0.976 170.0 3650 0.696 --153.8 1.644 --5.8 0.00328 69.3 0.976 169.6 3700 0.721 --161.3 1.453 --19.4 0.00350 65.8 0.977 169.4 3750 0.737 --168.1 1.243 --32.1 0.00357 64.5 0.978 169.2 3800 0.753 --174.7 1.042 --43.7 0.00374 64.5 0.979 169.2 3850 0.771 179.2 0.859 --54.3 0.00401 62.5 0.980 169.2 3900 0.788 174.4 0.708 --62.8 0.00407 58.4 0.980 169.3 3950 0.812 169.8 0.583 --71.5 0.00416 57.7 0.981 169.3 4000 0.829 166.0 0.477 --79.0 0.00427 55.8 0.982 169.3 MMRF2004NBR1 RF Device Data Freescale Semiconductor, Inc. 13 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS P3dB = 45.73 dBm (36 W) Pout, OUTPUT POWER (dBm) 48 P1dB = 44.61 dBm (29 W) 46 44 Actual 42 40 38 VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA Pulsed CW, 10 sec(on), 10% Duty Cycle, f = 2500 MHz 36 34 3 4 5 6 7 8 50 Ideal 9 10 11 12 13 14 15 16 17 18 19 P3dB = 44.46 dBm (35 W) 48 Pout, OUTPUT POWER (dBm) 50 46 Ideal P1dB = 45.42 dBm (28 W) Actual 44 42 40 38 36 VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA Pulsed CW, 10 sec(on), 10% Duty Cycle, f = 2700 MHz 34 32 2 3 4 5 6 Pin, INPUT POWER (dBm) 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Test Impedances per Compression Level P1dB Zsource Zload 42.7 + j11.6 4.86 -- j1.63 Figure 16. Pulsed CW Output Power versus Input Power @ 28 V @ 2500 MHz P1dB Zsource Zload 39.5 -- j8.7 3.53 -- j1.66 Figure 17. Pulsed CW Output Power versus Input Power @ 28 V @ 2700 MHz MMRF2004NBR1 14 RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS MMRF2004NBR1 RF Device Data Freescale Semiconductor, Inc. 15 MMRF2004NBR1 16 RF Device Data Freescale Semiconductor, Inc. MMRF2004NBR1 RF Device Data Freescale Semiconductor, Inc. 17 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Dec. 2013 Description Initial Release of Data Sheet MMRF2004NBR1 18 RF Device Data Freescale Semiconductor, Inc. How to Reach Us: Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Home Page: freescale.com Web Support: freescale.com/support Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E 2013 Freescale Semiconductor, Inc. MMRF2004NBR1 Document Number:Data MMRF2004NB RF Device Rev. 0, 12/2013 Freescale Semiconductor, Inc. 19